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Outline
Basic semiconductor physics
Semiconductor devices
Resistors
Capacitors
P-N diodes
BJT/MOSFET
Amorphous Structure
Polycrystalline Structure
Grain
Boundary
Grain
Terminology
Intrinsic semiconductor: undoped semiconductor
electrical properties are native to the material
donor
impurity atom that increases the electron concentration
group V
acceptor
impurity atom that increases the hole concentration
group III
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Terminology
n-type material:
semiconductor containing more electrons than holes in thermal
equilibrium
p-type material:
semiconductor containing more holes than electrons in thermal
equilibrium
majority carrier:
in n-type material: electrons
in p-type material: holes
minority carrier:
in n-type material: holes
in p-type material: electrons
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Intrinsic Silicon
Perfect covalent bond
Some bonds will be free at temperature T, create
free electrons and holes
concentration of free electrons/hole is a function
of temperature
np = ni2
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Cubic structure
3 material constants
E: 132 - 188 Gpa
: 0.07 - 0.28
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Crystalline Silicon
Other mechanical properties
Extrinsic Semiconductors
In all important electronic devices, dopant are
purposely added to control the electronic
properties
n-type semiconductor
add phosphorus or arsenic to provide excess electron
carriers
p-type semiconductor
add boron, gallium, or indium into silicon to provide
additional vacancies or holes
np = ni2
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Doping
All semiconductor devices are fabricated LOCALLY
introducing controlled number of n- and p-type dopant
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Semiconductor Conductivity
The conductivity((.cm)-1) is determined by the
mobility and concentration of both electrons and
holes
= qnn + q p p
n = 1350 cm2/V.s
p = 480 cm2/V.s
q = 1.609 10-19 C
temperature decreases, conductivity increases
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Resistors
A resistor can be defined as a device in which the
applied electric potential and measured current
exhibit a certain relationship, i.e., V = f(I)
For linear device, we have V = RI, where R is
called the resistance of the resistor
Consider a resistor with length L and crosssectional dimension W and d, R can be expressed
as
W
d
L
L
=
R=
Wd d W
L
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Diodes
A diode is a device made of p-n junction
Can be used for rectification
Mathematical model of diodes at forward bias
I D = I S ( eVD / VT 1)
VT =
T
11600
~ 2 for silicon
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p-n Junction
Forward bias
reduce the junction barrier and eliminate the depletion zone
Reverse bias
enhance the junction barrier and increase the depletion zone
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Capacitors
Capacitor is a device in which the charge and
electric potential can be defined, i.e., V = f(Q).
In linear element, we can express the above
relationship as Q=CV. Where C is the capacitance
of the capacitor.
For parallel plate,
C = A/d.
Where is the dielectric constant of dielectric, A is the
overlapped area and d is the separation of two parallel
plates.
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Transistors
Transistors are widely used for switching and
amplification
replace vacuum tubes
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Symbols of FET
CMOS IC
n+ Source/Drain
p+ Source/Drain
Gate Oxide
Polysilicon
p-Si
STI
Balk Si
n-Si
USG
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CMOS Chip
with 4 Metal
Layers
Passivation 2, nitride
Passivation 1, USG
Metal 4
Tantalum
barrier layer
Lead-tin
alloy bump
Copper
FSG
Metal 3
Copper
FSG
Nitride etch
stop layer
FSG
Metal 2
Tungsten plug
Nitride
seal layer
Copper
FSG
M1
Cu
Cu
Tantalum
barrier layer
FSG
FSG
Tungsten local
Interconnection
PSG
STI
Tungsten
n+
n+
USG
P-well
P-epi
P-wafer
p+
p+
N-well
PMD nitride
27 layer
barrier
Digital
basic devices to basic logic elements, e.g., NAND gate
from basic logic element to logic devices, e.g., FlipFlop
from logic device to logic circuit
e.g., register, memory, adder, .
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Fab Cost
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Wafer Yield
YW =
Wafers good
Waferstotal
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Die Yield
YD =
Dies
good
Dies total
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Packaging Yield
YC =
Chips good
Chips total
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Overall Yield
YT = YWYDYC
Overall Yield determines whether a fab is
making profit or losing money
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