PD - 91643

IRF6215S/L
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRF6215S)
l Low-profile through-hole (IRF6215L)
l 175C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l

VDSS = -150V
RDS(on) = 0.29

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for lowprofile applications.

ID = -13A
S

D 2 P ak

T O -26 2

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TA = 25C
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds

Max.

Units

-13
-9.0
-44
3.8
110
0.71
20
310
-6.6
11
-5.0
-55 to + 175

A
W
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

Thermal Resistance
Parameter
RJC
RJA

Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

Max.

Units

1.4
40

C/W

5/13/98

IRF6215S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
-150

-2.0
3.6

LS

Internal Source Inductance

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

V(BR)DSS

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Typ.

-0.20

14
36
53
37

Max. Units
Conditions

V
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA
0.29
VGS = -10V, ID = -6.6A

0.58
VGS = -10V, I D = -6.6A TJ = 150C
-4.0
V
VDS = VGS, ID = -250A

S
VDS = -25V, ID = -6.6A
-25
VDS = 150V, VGS = 0V
A
-250
VDS = 120V, VGS = 0V, TJ = 150C
100
V GS = -20V
nA
-100
VGS = 20V
66
ID = -6.6A
8.1
nC VDS = -120V
35
VGS = -10V, See Fig. 6 and 13

VDD = -75V

ID = -6.6A

RG = 6.8

RD = 12, See Fig. 10

Between lead,
7.5

nH
and center of die contact
860
VGS = 0V
220
pF
VDS = -25V
130
= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

V SD
t rr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
-11
showing the
A
G
integral reverse
-44
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -6.6A, VGS = 0V
160 240
ns
TJ = 25C, IF = -6.6A
1.2 1.7
C
di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

Starting TJ = 25C, L = 14mH

Uses IRF6215 data and test conditions

RG = 25, IAS = -6.6A. (See Figure 12)

ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS,

TJ 175C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

IRF6215S/L
100

100

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP

-ID , Drain-to-Source Current (A )

-ID , D rain-to-S ou rc e C urre nt (A )

TO P

10

2 0 s P U LS E W ID TH
TTcJ = 25C
2 5C
A

-4 .5V
1
1

10

-4 .5V
2 0 s P U LS E W ID TH
TTCJ == 1175C
75 C

100

10

-VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e

(N o rm alize d)

TJ = 25 C
TJ = 1 7 5 C
10

V DS = -5 0 V
2 0 s P U L S E W ID TH

1
4

-VG S , Ga te -to-Source Volta ge (V)

Fig 3. Typical Transfer Characteristics

10

100

-VD S , D rain-to-S ourc e V oltage (V )

100

-I D , D rain-to -So urc e C urre nt (A )

10

I D = -1 1A

2.0

1.5

1.0

0.5

VG S = -10 V

0.0
-60

-40 -20

20

40

60

80

100 120 140 160 180

T J , J unc tion T em perature (C )

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF6215S/L
V GS
C is s
C rs s
C o ss

C , Capacitance (pF)

1600

=
=
=
=

20

0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd

-V G S , G ate-to-S ource V oltage (V )

2000

C iss
1200

C oss
800

C rss
400

0
10

16

12

FO R TE S T CIR C U IT
S E E FIG U R E 1 3

100

-VD S , D rain-to-S ourc e V oltage (V )

20

40

60

A
80

Q G , Total G ate C harge (nC )

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

100

O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
10 s

-I D , D rain C urrent (A )

-I S D , Reverse D rain Current (A )

V D S = -12 0V
V D S = -75 V
V D S = -30 V

A
1

I D = -6 .6 A

TJ = 17 5 C

10

T J = 25 C

100 s

10

1m s

C
TTCC = 25
25C

V G S = 0V

0.1
0.2

0.6

1.0

1.4

-VS D , S ourc e-to-D rain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

1.8

T J = 17 5C
S ing le P u lse

1
1

10m s
10

100

-VD S , D rain-to-S ourc e V oltage (V )

Fig 8. Maximum Safe Operating Area

A
1000

IRF6215S/L
15

VGS
12

-ID , Drain Current (A)

RD

VDS

D.U.T.

RG

VDD

-10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

3
td(on)

tr

t d(off)

tf

VGS
10%

0
25

50

75

100

125

150

175

TC , Case Temperature ( C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

90%
VDS

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

10

1
D = 0.50
0.20
0.10
0.1

0.01
0.00001

P DM

0.05
0.02
0.01

t1
SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF6215S/L

D .U .T

RG

IA S

D R IV E R

-2 0 V
tp

VD D

0 .0 1

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

E A S , S ingle P ulse A valanche E nergy (m J)

800

VD S

ID
-2 .7A
-4 .7A
-6.6 A

TO P
B O TTO M
600

400

200

A
25

50

75

100

125

150

175

S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

-10V
QGS

QGD

D.U.T.

+VDS

VGS

VG

-3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

IRF6215S/L
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

RG
VGS

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive
P.W.

D=

Period

P.W.
Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

[ ISD ]

IRF6215S/L
D2Pak Package Outline

1 0.54 (.4 15)

1 0.29 (.4 05)
1.4 0 (.055 )
M AX.

-A-

1.3 2 (.05 2)
1.2 2 (.04 8)

1.7 8 (.07 0)
1.2 7 (.05 0)

1 0.16 (.4 00 )
RE F.

-B -

4.69 (.1 85)

4.20 (.1 65)

6.47 (.2 55 )
6.18 (.2 43 )

15 .4 9 (.6 10)
14 .7 3 (.5 80)

2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )

5 .28 (.20 8)
4 .78 (.18 8)

3X

1.40 (.0 55)

1.14 (.0 45)
5 .08 (.20 0)

0.5 5 (.022 )
0.4 6 (.018 )

0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )

8.8 9 (.3 50 )
R E F.

1.3 9 (.0 5 5)
1.1 4 (.0 4 5)

B A M

M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )

NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.

LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E

8.89 (.3 50 )
17 .78 (.70 0)

3 .8 1 (.15 0)
2 .08 (.08 2)
2X

Part Marking Information

D2Pak

IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E

PART NUM BER

F530S
9 24 6
9B
1M

DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK

2.5 4 (.100 )
2X

IRF6215S/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262

IRF6215S/L
Tape & Reel Information
D2Pak

TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )

1 .6 5 (.0 6 5 )

1 .60 (.06 3)
1 .50 (.05 9)

1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )

0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )

2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )

TR L
10 .9 0 (.42 9)
10 .7 0 (.42 1)

1 .75 (.06 9 )
1 .25 (.04 9 )

4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)

16 .10 (.63 4 )
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 )
12.80 (.504 )

2 7.4 0 (1.079)
2 3.9 0 (.9 41)
4

33 0.00
(1 4.1 73)
MA X.

NO TES :
1. C O M F O R M S TO E IA -4 18.
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER .
3. D IM E N S IO N ME A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

60.00 (2.3 62)

MIN .

26 .40 (1.03 9)
24 .40 (.961 )
3

3 0.40 (1.1 97)

MAX.
4

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98