AON6912A

30V Dual Asymmetric N-Channel MOSFET

General Description

Product Summary

The AON6912A is designed to provide a high efficiency

synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter
applications.

VDS

Q1
30V

Q2
30V

ID (at VGS=10V)

34A

52A

RDS(ON) (at VGS=10V)

<13.7m

<7.3m

RDS(ON) (at VGS = 4.5V)

<19.3m

<10.4m

100% UIS Tested

100% Rg Tested

DFN5X6
Top View

Bottom View

PIN1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

Pulsed Drain Current C

Avalanche Energy L=0.1mH C

TC=25C
Power Dissipation

TA=25C
Power Dissipation A

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev1: Mar. 2011

Steady-State
Steady-State

33
130

13.8

IAS, IAR

22

28

EAS, EAR

24

80

mJ

22

30

12

1.9

2.1

1.2

1.3

TJ, TSTG

Symbol
t 10s

21
85

10.8

PDSM

TA=70C

V
52

PD

TC=100C

Units
V

10

IDSM

TA=70C

Avalanche Current

20
34

IDM
TA=25C

Max Q2
30

ID

TC=100C

Continuous Drain
Current

Max Q1

VGS
TC=25C

Continuous Drain
Current

Bottom View

Top View

RJA
RJC

-55 to 150

Typ Q1
29
56
4.5

www.aosmd.com

Typ Q2
24
50
3.5

Max Q1 Max Q2
35
29
67
60
5.5
4.2

W
W
C

Units
C/W
C/W
C/W

Page 1 of 10

AON6912A

Q1 Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

85

VGS=10V, ID=10A
TJ=125C
VGS=4.5V, ID=10A
gFS

Forward Transconductance

VDS=5V, ID=10A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Units
V

1
TJ=55C

Static Drain-Source On-Resistance

Max

30

VDS=30V, VGS=0V

VGS(th)

RDS(ON)

Typ

100

nA

1.9

2.5

9.8

13.7

14.5

21.5

12.9

19.3

25

45
0.75

610

760

910

pF

VGS=0V, VDS=15V, f=1MHz

88

125

160

pF

40

70

100

pF

VGS=0V, VDS=0V, f=1MHz

0.8

1.6

2.4

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

11

14

17.0

nC

Qg(4.5V) Total Gate Charge

6.6

8.0

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

VGS=10V, VDS=15V, ID=10A

2.4

nC

nC

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=10A, dI/dt=500A/s

5.6

8.4

Qrr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/s

6.4

9.6

VGS=10V, VDS=15V, RL=1.5,

RGEN=3

4.4

ns

ns

17

ns

ns
ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011

www.aosmd.com

Page 2 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

30
10V

4V

4.5V

VDS=5V

6V

50

25

40

20
ID(A)

ID (A)

3.5V
30

15
10

20
VGS=3V

10

125C

25C

0
0

18

1.5

2.5

3.5

4.5

Normalized On-Resistance

1.8

16
RDS(ON) (m
)

0.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

14

VGS=4.5V

12
10
VGS=10V
8
6

VGS=10V
ID=10A

1.6
1.4

17
5
VGS=4.5V
2
ID=10A
10

1.2
1
0.8

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

0
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

30

1.0E+02
1.0E+01

ID=10A

25

40

IS (A)

RDS(ON) (m
)

1.0E+00
20
125C

1.0E-01
1.0E-02

15

125C

1.0E-03
10

25C

1.0E-04

25C

1.0E-05

5
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev1: Mar. 2011

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

Page 3 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

1200
VDS=15V
ID=10A

1000
Capacitance (pF)

VGS (Volts)

600
400
Coss

200

Crss

0
0

4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics

10

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

160

100.0

30

RDS(ON)
limited

100us
1.0

1ms

DC
TJ(Max)=150C
TC=25C

0.1

TJ(Max)=150C
TC=25C

10s
Power (W)

10.0

200

1000.0

ID (Amps)

Ciss

800

120

80

40

0.0

0
0.01

0.1

1
VDS (Volts)

10

100

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

Z JC Normalized Transient
Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
1

RJC=5.5C/W

0.1
PD
0.01

Ton

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: Mar. 2011

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Page 4 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100
IAR (A) Peak Avalanche Current

25

Power Dissipation (W)

TA=25C
TA=100C

TA=150C
TA=125C

20

15

10

10
0.000001

0.00001

0.0001

0.001

25

75
100
125
TCASE (
C)
Figure 13: Power De-rating (Note F)

Time in avalanche, tA (s)

Figure 12: Single Pulse Avalanche capability (Note
C)

50

10000

40
35

TA=25C

1000

30
25

Power (W)

Current rating ID(A)

150

20
15

17
5
2
10

100

10

10
5

0
0

25

50

75
100
125
TCASE (
C)
Figure 14: Current De-rating (Note F)

0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

0.00001

150

0.001

Z JA Normalized Transient
Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

40

RJA=67C/W

0.1

0.01
Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1: Mar. 2011

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Page 5 of 10

AON6912A

Q2 Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

Max

30
1
TJ=55C

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.3

ID(ON)

On state drain current

VGS=10V, VDS=5V

130

Units
V

VDS=30V, VGS=0V

VGS(th)

100

nA

1.9

2.5

6.1

7.3

8.5

10.2

VGS=4.5V, ID=20A

8.3

10.4

VGS=10V, ID=20A
RDS(ON)

Typ

Static Drain-Source On-Resistance

TJ=125C

gFS

Forward Transconductance

VDS=5V, ID=20A

60

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance

m
m
S

35

870

1090

1300

pF

VGS=0V, VDS=15V, f=1MHz

340

490

640

pF

22

38

53

pF

VGS=0V, VDS=0V, f=1MHz

0.4

0.9

1.4

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

12

16

20

nC

Qg(4.5V) Total Gate Charge

nC

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

VGS=10V, VDS=15V, ID=20A

2.5

nC

1.5

2.5

3.5

nC

VGS=10V, VDS=15V, RL=0.75,

RGEN=3

ns

ns

16

ns

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/s

10

13

2
16

ns

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s

20

25

30

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011

www.aosmd.com

Page 6 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

50
10V

4V

4.5V

VDS=5V

80

40
3.5V

30
ID(A)

ID (A)

60

40

20

20

10

125C
VGS=3V

25C
0

0
0

15

2.5

3.5

Normalized On-Resistance

1.6

12
VGS=4.5V
RDS(ON) (m
)

1.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

9
6
VGS=10V
3

VGS=10V
ID=20A
1.4

17
5
2
10

1.2

VGS=4.5V
ID=20A

0.8

0
0

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

30

1.0E+02
ID=20A

1.0E+01

25

40

1.0E+00
IS (A)

RDS(ON) (m
)

20
125C

15
10

125C

1.0E-01
1.0E-02

25C

1.0E-03

1.0E-04

25C

1.0E-05

0
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev1: Mar. 2011

www.aosmd.com

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

Page 7 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

1800

1400
Capacitance (pF)

VGS (Volts)

1600

VDS=15V
ID=20A

Ciss

1200
1000
800
600

Coss

400

Crss

200
0

0
0

9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics

18

100.0

160

10s

RDS(ON)
limited

100s

10.0

1ms

DC
1.0

10ms

Power (W)

ID (Amps)

30

200

1000.0

TJ(Max)=150C

0.1

TJ(Max)=150C
TC=25C

120
80
40

0.0

0
0.01

0.1

1
VDS (Volts)

10

100

0.0001

10

0.01

0.1

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
1

0.001

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Z JC Normalized Transient
Thermal Resistance

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

40

RJC=4.2C/W

0.1
Single Pulse

PD

0.01
Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: Mar. 2011

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Page 8 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100
IAR (A) Peak Avalanche Current

35
TA=25C
Power Dissipation (W)

30
TA=100C
TA=125C

TA=150C

25
20
15
10
5
0

10

0.000001

0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)

25

50

75
100
125
TCASE (
C)
Figure 13: Power De-rating (Note F)

10000

60

TA=25C

50

1000
40

Power (W)

Current rating ID(A)

150

30

17
5
2
10

100

20

10
10

0
0

25

50
75
100
125
TCASE (
C)
Figure 14: Current De-rating (Note F)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

150

0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)

0.00001

0.001

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=60C/W

0.1

PD

0.01

Ton

Single Pulse

0.001
0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev1: Mar. 2011

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Page 9 of 10

AON6912A

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds Isd
Vgs
Ig

Rev1: Mar. 2011

Vgs

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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Page 10 of 10