AO3413

20V P-Channel MOSFET

General Description

Features

The AO3413 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.

VDS = -20V
ID = -3A
RDS(ON) < 80m
RDS(ON) < 100m
RDS(ON) < 130m

(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)

SOT23
Top View

Bottom View

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current A
Pulsed Drain Current

Power Dissipation

Junction and Storage Temperature Range

Rev 9: July 2010

1.4

0.9

TJ, TSTG

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A t 10s
Maximum Junction-to-Ambient A Steady-State
Steady-State
Maximum Junction-to-Lead C

-15

PD

TA=70C

8
-2.4

IDM
TA=25C

Units
V

-3

ID

TA=70C

Maximum
-20

Symbol
RJA
RJL

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-55 to 150

Typ
70
100
63

Max
90
125
80

Units
C/W
C/W
C/W

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AO3413

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol
BVDSS

Parameter
Drain-Source Breakdown Voltage

Conditions
ID=-250A, VGS=0V

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS=8V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-0.4

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-15

Min
-20

VDS=-20V, VGS=0V
TJ=55C

Static Drain-Source On-Resistance

70

100

85

130

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

Gate Source Charge

VGS=-4.5V, VDS=-10V, ID=-3A

12
-0.7

560

SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs

V
A

VGS=-2.5V, ID=-2.6A

IS=-1A,VGS=0V

Gate resistance

-1

VGS=-1.8V, ID=-1A
Diode Forward Voltage

Rg

-0.65

nA

80

Forward Transconductance

Reverse Transfer Capacitance

115

VSD

Output Capacitance

-1
-5

56

gFS

Coss

Units
V

80

TJ=125C

VDS=-5V, ID=-3A

Crss

Max

100

VGS=-4.5V, ID=-3A
RDS(ON)

Typ

S
-1

-1.4

745

pF

80

pF

70

pF

15

23

8.5

11

nC

1.2

nC

Qgd

Gate Drain Charge

2.1

nC

tD(on)

Turn-On DelayTime

7.2

ns

tr

Turn-On Rise Time

36

ns

tD(off)

Turn-Off DelayTime

53

ns

tf
trr

Turn-Off Fall Time

56

ns

IF=-3A, dI/dt=100A/s

37

Qrr

Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s

27

Body Diode Reverse Recovery Time

VGS=-4.5V, VDS=-10V, RL=3.3,

RGEN=6

49

ns
nC

A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
12
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 9: July 2010

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AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

20
VDS=-5V

-3.0V

-4.5V
20

-2.5V

15
-ID(A)

-ID (A)

15
-2.0V

10

-15

10

125C

VGS=-1.5V

25C

0
0

-VDS (Volts)
Figure 1: On-Region Characteristics

RDS(ON) (m
)

130
VGS=-1.8V

110

90
VGS=-2.5V
70
VGS=-4.5V
50

1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics

VGS=-2.5V
ID=-2.6A
1.4
VGS=-4.5V
ID=-3A

1.2
VGS=-1.8V
ID=-1A
1

0.8
0

10

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

180

1E+02
ID=-3A

160

1E+01

12

140

1E+00

120
-IS (A)

RDS(ON) (m
)

1.6
Normalized On-Resistance

150

0.5

125C

100

125C

1E-01
1E-02

25C

80
1E-03
60

25C
1E-04

40
0

1E-05

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Rev 9: July 2010

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5

1400
VDS=-10V
ID=-3A

1200
Capacitance (pF)

-VGS (Volts)

4
3
2

1000
800
Ciss
600

-15

400

Coss

200
0

Crss

0
0

10

Qg (nC)
Figure 7: Gate-Charge Characteristics

100.00

15

20

1000

RDS(ON)
limited

TJ(Max)=150C
TA=25C

10s

100

100s

Power (W)

-ID (Amps)

10.00

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

1ms

1.00

10ms
0.1s

TJ(Max)=150C
TA=25C

0.10

10

1s

DC

0.1

0.01
0.1

10

0.00001

100

-VDS (Volts)

0.001

0.1

10

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

Z JA Normalized Transient
Thermal Resistance

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=125C/W

12

0.1
PD
0.01

Ton

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Rev 9: July 2010

www.aosmd.com

Page 4 of 5

AO3413

G ate C harge Test C ircuit & W aveform

V gs
Vgs

Qg
-10V

V DC

Qgd

+
DUT

Qgs

V
Vds
ds

VD C

V gs
Vgs

Ig
C harge

Resistive Switching Test Circuit & W aveform s

RL
Vds

t off

t on
td(on)
d(on )

Vgs

D UT

Vgs

t dd(off)
(o ff)

tr

90%

Vdd

VDC

tf

Rg

Vgs

10%
Vds

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd
Vgs
Ig

Rev 9: July 2010

-Isd

+ Vdd

t rr

dI/dt
-I RM
Vdd

VDC

-I F

-Vds

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