EEAE 239

Analog Electronics

!

[Lecture 2: Diodes]

pn junction
n-type (negative)

Electron

p-type (positive)

Majority carriers

Analog Electronics - Diodes - Daniele Tosi

Hole

pn junction
pn

junction

Apply bias to
pn junction:
The excess of
electrons (n) and
holes (p) combine in
the depletion region
Analog Electronics - Diodes - Daniele Tosi

(1) No bias
The width of the depletion region
determines the resistance of the
diode to conducing current

In no-bias
condition, the
current through a
diode is ~0
Analog Electronics - Diodes - Daniele Tosi

If 0V voltage is applied to pn junction:

- Minority carriers (holes in p) pass
in n material

- Majority carriers (electrons in n)
contrast the effect of minority
carriers

- The net effect is ~0

(2) Reverse bias

When VD<0V:

The width of depletion increases

In reverse bias
condition, the
diode has a small
negative saturation
current (Is)
Analog Electronics - Diodes - Daniele Tosi

If negative voltage is applied to pn

junction:

- The barrier through conductance
increases: the majority current is ~0

- The minority current is the
dominant term, but is a very small
term (uA-pA)

(3) Forward bias

When VD>0V:

The width of depletion lowers

In forward bias
condition, the
diode has a large
forward current
(ID)
Analog Electronics - Diodes - Daniele Tosi

If positive voltage is applied to pn

junction:

- The majority current overcomes
the effect of the minority carriers

- Current flow from p to n

- Barrier to conductance abated

Shockleys equation
Solid state physics: Shockleys equation

ID = IS{exp[VD/(nVT)]-1}
IS: Reverse saturation current (few pA)

n: Ideality factor (~1-2)

VT: Thermal voltage:

VT = kT/q 26 mV at 27C (300K)
(k = Boltzmanns constant, T = temperature in
Kelvin, q = magnitude of electronic charge)

Analog Electronics - Diodes - Daniele Tosi

Diode characteristics
I(V) - IV

characteristics

Analog Electronics - Diodes - Daniele Tosi

Diode characteristics
Active region

High current for
voltage > 0.7V

Analog Electronics - Diodes - Daniele Tosi

Diode characteristics

Very low
saturation
current for any
negative V

Analog Electronics - Diodes - Daniele Tosi

Knee voltage
Knee:
discriminates
between reverse
and forward
mode

!

Knee voltage: 0.7

for Si diode

Analog Electronics - Diodes - Daniele Tosi

Zener region

Analog Electronics - Diodes - Daniele Tosi

SMC diodes
GeSiGaAs

!

Knee voltage:

Ge: 0.3V

Si: 0.7V

GaAs: 1.2V

!

Saturation current:

Ge: ~uA

Si: ~10pA

GaAs: ~1pA

Analog Electronics - Diodes - Daniele Tosi

Temperature sensitivity
ID = IS[exp(VD/nVT)-1]

Temperature

Knee V

Sat. current
|Zener V|

Stability with T:

GaAs > Si > Ge

Analog Electronics - Diodes - Daniele Tosi

Diode resistance
Diode resistance:

1) DC or static

2) AC or dynamic

3) Average
Static resistance is calculated
with Ohms law:

RD =VD/ID

Analog Electronics - Diodes - Daniele Tosi

VD = -5V RD = 5e11

VD = -0.9V RD = 9e10

VD = 0V RD = 8e8

VD = 0.7V RD = 9e2

VD = 1.3V RD = 3e-4

VD = 2.5V RD = 2e-17

AC resistance
Small input in AC - small-signal analysis

We can approximate the IV as a linear
curve, at the point of operation

(Q-point)

!

The AC resistance is obtained then as

rd =Vd/Id
Important to understand the process for
the calculus of the rd value in small-signal
conditions!
Analog Electronics - Diodes - Daniele Tosi

AC resistance
VD

nVT
Shockley: I D = I S exp 1

VD

dI D
1
1
nVT
nVT
Derivative:
= I S exp
=
I S exp 1 + I S

dVD
nVT nVT

VD

ID

dI D

ID
1
=
ID + IS !
dVD nVT
nVT

which can be rewritten as

AC resistance:

dVD
dI D

= rd =

Analog Electronics - Diodes - Daniele Tosi

nVT
ID

26mV

ID

in forward bias
+rB

Average AC resistance
raverage =

VD
I D

ptpt

Id = 17mA - 2mA = 15 mA

Vd = 0.725V - 0.65V = 75 mV

rd = 75mV / 15mA = 5
!

Analog Electronics - Diodes - Daniele Tosi

Resistance

Analog Electronics - Diodes - Daniele Tosi

Diode model
For circuit analysis, diodes are replaced by a model, that
simplifies the IV analysis.

Ideal diode

Analog Electronics - Diodes - Daniele Tosi

Knee voltage

Piecewise linear

Diode model
Ideal diode

Knee voltage

Piecewise linear

Analog Electronics - Diodes - Daniele Tosi

Diode circuit solving

(1) Choose the appropriate diode model

(2) For each diode, select a hypothesis on/off (N diodes, 2N
attempts)

(3) Replace each diode with equivalent model

(4) Solve the circuit using KVL, KCL and theorems

(5) Measure voltage/current through diode

(6) Compare the voltage/current with the hypothesis

(7) If correct, the circuit is solved

(8) If incorrect, reformulate hypotesis
KVL/KCL always correct! If hypotheses are not met, change
hypothesis and/or diode model.
Analog Electronics - Diodes - Daniele Tosi

Example
Hypothesis: Diode OFF

ID = 0A, VR = 0V

Verify hypothesis: apply KVL

E - VD - VR VD = E = 6V

E=6V

Wrong!

!

Hypothesis: Diode ON

VD = 0V, VR = 6V

ID = VR / R = 3mA

Ok! ID is okay with on mode
!
Analog Electronics - Diodes - Daniele Tosi

Example (2)

Are both diodes on?

Analog Electronics - Diodes - Daniele Tosi

Example (AC)
Si diode model

!

Diode ON - replace diode with 0.7V

generator

KVL: Vin - VD - VR = 0 VR = Vin -0.7V

When is diode on?

ID = VR/R = (Vin - 0.7V)/R > 0A

Vin > 0.7V

!

Diode OFF - replace diode with open

ID = 0A VR = 0V

When is diode off?

KVL: Vin - VD = 0, VD = Vin

Vin < 0.7V

Analog Electronics - Diodes - Daniele Tosi

Diode capacitance
= RC

CT = transition/depletion
CD = diffusion/storage

A
C = 0 r
d
Analog Electronics - Diodes - Daniele Tosi

Closely related to the width of the

depletion region

Reverse recovery time

!

tRR = reverse
recovery time =

Time required for a
diode to stop
conducting once it is
switched from FW to
REV bias.
!

tRR, CD/T introduce

frequency-dependent
diode response

Analog Electronics - Diodes - Daniele Tosi

Commercial diodes

http://www.diodes.com/datasheets/ds12019.pdf
http://www.onsemi.com/pub_link/Collateral/
BAS16XV2T1-D.PDF

Analog Electronics - Diodes - Daniele Tosi

Other diodes
Optical applications:

- LED (also base for lasers)

- Photodiode (pin and avalanche)

!

Voltage regulations:

- Zener diode

- Schottky diode (optoelectronics)

- Tunnel diode (optoelectronics)

- Varactor diode

- Thermal, varactor, varicap,
Analog Electronics - Diodes - Daniele Tosi

LED diodes
Symbol

LED case
!

LED: light emitting diode. When in forward mode, photons are emitted

Applications: light (UV/VIS), telecom (NIR),

FW bias voltage is 2-3V, resistance is quite ideal connect a diode in a
circuit to check whether the correct V is applied

Analog Electronics - Diodes - Daniele Tosi

Photodiode
!

Photodiode: Converts light into current with a p-i-n structure

Responsivity: measured in A/W (Amps output per W optical input)

Si (UV/VIS), InGaAs (NIR)

For very high speed (10-100Gb/s telecom!)

Photodiodes are 0- or reverse-biased (-3.3 to -12V): on

top of a saturation current, there is the optical current

A
C = 0 r
d

Active area

Big A: easier focusing on detection surface, high capacitance (no high speed)

Small A: smaller capacitance (high speed), difficult focusing

!
Analog Electronics - Diodes - Daniele Tosi

Zener diode
Zener diodes operate in the breakdown (Zener) region

The characteristics is almost a vertical

line, resistive element is negligible

Zener voltage: 1.8V - 200V

!

Analog Electronics - Diodes - Daniele Tosi