RF POWER LDMOS TECHNOLOGY

26 - 28 Vdd
MAIN TECHNOLOGICAL FEATURES
Source Back Electrode
Locos Field Oxide Th. 2.4 m
Lch Ranging from 1.5 down to 0.4 m
Self Alligned CoSi2/Poly Gate Fingers
(Rs=2 /square)
Barrier/Al Alloy Metallization

From HF up to 2 GHz
Drain
Finger
Metal

n+
Source

CoSi2

P+
Sinker

n- Drain
p- Epi

Dielectric
p+ Body
p+
Sub.

Source Back Electrode

2 m

Schematic and TEM Cross Sections

SD57045 45 W Device
May 1999

LDMOS Electrical Comparison

Parameters
Pout [W]
Pgain [db]
[%]
IMD3 [-dbc]
Coss [pF]

SD57045
STMicrelectronics

MRF183
MOTOROLA

SD57060
STMicrelectronics

MRF184
MOTOROLA

45
15
40
28
40

45
11.5
33
28
38

60*
14*
60*
N.A.
47

60*
11.5*
53*
N.A.
44

73

82

84

83

4.5

2.4

4.3

65

65

65

65

@ Vds=28V Vgs=0 f=1MHz

Ciss [pF]
@ Vds=28V Vgs=0 f=1MHz

Crss [pF]
@ Vds=28V Vgs=0 f=1MHz

BVdss min. [Volt]

PEP conditions: @ F=945 and 945.1 MHz Idq=250 mA Vdd=28V

* measured under CW conditions @ F=945MHz Idq=100 mA Vdd=28V)

A complete Products Family is under development up to 2GHz

SD57045 TYPICAL DATA @ 945 MHz

Power Gain vs Output Power

Efficiency vs Output Power

18

Pgain (dB)

250 mA

450 mA

Efficiency (%)

Idq = 75 mA
150 mA

17
16
15
14
13

60
50
40
30

Idq = 250mA

12
1

10

100

10

20

30

40

50

60

70

Pout (W)

Pout (W)

IMD3 vs Output Power

Capacitance vs Drain-Source voltage

180

IMD3 (dB)

250 mA

450 mA

Capacitance (pF)

Idq =75 mA
150 mA

-20
-30
-40
-50

Crss

150

Coss

Ciss

120
90
60
30
0

10

Pout, PEP (W)

100

10

15

20

Drain-Source Voltage (V)

25

30

SD57045 Test Fixture

part A: IF/Duplex

back view

NOKIA
6110

front view
part B: RF Side

part C: Interf/Supply

part D: DSP/uP

BAS70
Siemens
Schottky diode

TCO986H
Toyocom
VTCXO 13 MHz

BFR93A
Siemens
Discrete driver
amplifier
Power amplifier
( 2 stages )
Printed coupler
TX RF SAW filter

IL028
FDK
UHF VCO

DA-NL
NTK
2nd IF dielectric filter
BFR93A
Siemens
VHF VCO
discrete

RX RF SAW filter

RF01A
Philips
Front end

B4570

Siemens
IF SAW filter

Antenna Connector
DFY2R902
Murata

Duplexer

SAVE battery contact

PLUSSA
ST

IF Part + synthesizer + PA
conttrol

SIM connector

NTK
935 - 960 Mhz

71 MHz

13 MHz
I RX

AGC
Siemens

RF01A

58 MHz

B4570

1006 -

Q RX

/ 4

1031 MHz

232 MHz

PLL 1

PLL 2
brf93a

M ur a t a
FDK

DFY2R902

I L028
13 MHz

/ 2
116 MHz

brf93a
ITX

PA

driver

116 MHz
890 - 915 Mhz

det ect i o n

QTX

PA

PLU S S A

cont r ol

0.9GHz Low Noise Amplifier

50

BiCMOS6M process with planar inductors

Wide dynamic range
Low Noise current-mode adaptive bias scheme
Dual linearity mode (Low/High IPi)

Performances:
Simulated
Supply Voltage
Current (Low /High IPi)

2.75V
10 mA / 19 mA

Measured
Preliminary (*)
2.75V
11.9 mA / 21.8 mA

Power Gain (Low Ipi/High IPi)

15 dB / 15.5 dB

11.5 dB/ 12dB

Noise Figure (Low IPi)

Input Impedance
Output Impedance
1dBibCp (Low/ High IPi)

1.5 dB
50 Ohm
50 Ohm
-10dBm/ -4dBm

2 dB
-7 dBm / -1 dBm

(*) RF Socket TQFP48 effect to be deembedded

Matching
Network

Matching
Network

LNA

50

High Gain Mode

Low Gain Mode

ON board assy: LNA+MIXER in BCMOS 5

cooperazione UNI PAVIA/ST (Progetto MIRA)

E-GSM/DCS DUAL BAND RADIO F.E.

Technology : HSB2 - 3ML

Package : TQFP44

Die Area 2.7 x 3.7 mm

DECT Radio Chip Set

Digital Base Band
RADIO
RX DATA
TRANSCEIVER
LNA

ARM 7,
SAPPHISE,
DSP ...

ANALOG
FRONT
END

TX DATA
RSSI
GSMK FILTER

PA

Mono Chip
Radio

Base Band
Processor

RFDECT Application Board

Saw Filter

Post
Discriminator
Filter

RF Input

RF Output

Loop Filter

STARMAN Satellite Radio

Chip Set
Indoor
Antenna

Outdoor
Antenna

IIC
SDA

SCL

LNA
RN

IIC

IIC

RP
M_CLK

RF
Front End
Q1

SCK
SDI

Channel
Decoder

AGC

BIT_EN

MPEG
Decoder

SDO
SCKT

DAC

LRCKT

PLL
OCLK

Q2

LOCK
IF SAW
Filter

IIC

Ext
Tank

Ext
Tank

DO_EN

DOI

DOSCLK

STARMAN Radio Block Diagram

GAIN
CONTROL
RF 1452~1492MHz

IF1 to IF2
MIXER

RF MIXER

IF2
BUFFER
IFout 0.6~3.1MHz

LNA
IF1 BUFFER

VGA
flo2

flo1
fref2

CHARGE
PUMP

1st
PLL
PHASE
DETECTOR

CHARGE
PHASE
VCO
DETECTOR PUMP

fref1

:K
:N

2nd
PLL

:M
PROG.
DIVIDER

CRYSTAL
OSCILLATOR

STARMAN Satellite Radio

Measurement of the Phase Noise of the Oscillator
C
-H
81
2S
. S
0p
0ect
3dB
r um
10dB
/R
E
F0dB
m

- 99. 75kH
z

M
kr

H
ld

R
B
W
#10H
zV
B
W
10H
zA
T
N
10dB
SW
P24. 57sec
C
E
N
T
E
R
962. 5kH
zSPA
N
200kH
z

RF= 1201 MHz, Span = 200 KHz, RBW = 10 Hz

Phase noise = - 90 dBc /Hz @ 100 KHz

STARMAN Satellite Radio

Chip Layout - HSB2 Technology
RF VCOs

RF LNA, mixer

I2CBUS int.
PRESCALER +
MUX

Prog. Counter

IF VCO

VGA

STARMAN Application Board

GPS System
ST chipset

STB5600

ST20-GP1

GPS Radio FE

GPS Microprocessor

SRAM

ROM

GPS RADIO/ IF/DIGITAL CHIP-SET

L1 @1575.42 MHz

LNA

ST20GP6
IF
filter

ACTIVE ANTENNA

20MHz

12 channel
GPS
Hardware
DSP

filter

D
M

GPS IF

IF AMP

RF AMP

BUFF

Low power
controller

CK

Clock

16 MHz
/5
M

STB5600

1555 MHz
filter

Local
Oscillator

BUFF

LO BUFF

80 MHz

Real time
clock/calendar
Programmable
memory
interface
64K
SRAM

128K
mask ROM

ST20
CPU
Interrupt
controller
Serial
communication
2 UART (ASC)
Parallel
input/output
Diagnostic
control unit

Test
access port

16

GPS Board
RF Section

Digital Section

Large as a credit card (mm 90x50)

A Path Recorded in Catania

with the GPS
Tunnel

Mean value of satellites tracked: 6

Percentage of 3D Fix : 70.4%
Percentage of 2D Fix : 28.2%
Percentage of NO Fix : 1.4%
Mean value of DOP : 2

Tunnel

Conclusioni
Rapida crescita del mercato dei C.I. RF spinta dalla crescente
domanda nel settore wireless
Nuove applicazioni (multistandard, UMTS, DVS, ecc.) richiedono lo
sviluppo di nuovi materiali, substrati, package e maggiori integrazioni di
funzioni
Evoluzione tecnologica per C.I. RF piu'lenta che per VLSI
(prestazioni, effetti parassiti, aspetti CAD, verifica ...)
Focalizzazione sull'integrazione di componenti passivi integrati di alta
qualita' per ridurre consumi/costi
La complessita' del panorama applicativo (standard/sistemi) richiede
una varieta' di conoscenze specifiche che ben si adattano alla
esperienza ed agli interessi del mondo accademico
Soddisfacenti i risultati ottenuti ed in crescita l'attivita' di
collaborazione tra i gruppi di ricerca universitari (PV, CT, MI, BO, PI,
ecc.) ed STMicroelectronics