TSUS540.

VISHAY

Vishay Semiconductors

GaAs Infrared Emitting Diodes in 5 mm (T-1) Package

Description
TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and phototransistors.

Features

94 8389

Low cost emitter

Low forward voltage
High radiant power and radiant intensity

Suitable for DC and high pulse current operation

Standard T-1 ( 5 mm) package
Comfortable angle of half intensity = 22
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free device

Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN
photodiodes or phototransistors.

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Symbol

Value

Reverse Voltage

Parameter

Test condition

VR

Unit
V

Forward current

IF

150

mA
mA

Peak Forward Current

tp/T = 0.5, tp = 100 s

IFM

300

Surge Forward Current

tp = 100 s

IFSM

2.5

PV

210

mW

Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient

Document Number 81056

Rev. 1.4, 08-Apr-04

t 5 sec, 2 mm from case

Tj

100

Tamb

- 55 to + 100

Tstg

- 55 to + 100

Tsd

260

RthJA

375

K/W

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VISHAY

Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Forward Voltage

Typ.

Max

Unit

IF = 100 mA, tp = 20 ms

Symbol
VF

1.3

1.7

IF = 1.5 A, tp = 100 s

VF

2.2

3.4

TKVF

- 1.3

Temp. Coefficient of VF

IF = 100 mA

Reverse Current

VR = 5 V

IR

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

Min

mV/K
100

30

A
pF

Optical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Radiant Intensity

Symbol

Min

Typ.

Ie

14

mW/sr

Ie

10

17

mW/sr

Ie

15

20

mW/sr

Ie

60

140

mW/sr

Ie

85

160

mW/sr

Ie

120

IF = 100 mA, tp = 20 ms

IF = 1.5 A, tp = 100 s

IF = 100 mA, tp = 20 ms

Radiant Power

Max

Unit

190

mW/sr

13

mW

14

mW

15

mW

IF = 20 mA

TK e

- 0.8

%/K

22

deg

Peak Wavelength

IF = 100 mA

950

nm

Spectral Bandwidth

IF = 100 mA

50

nm

Temp. Coefficient of p

IF = 100 mA

TKp

0.2

nm/K

Temp. Coefficient of e
Angle of Half Intensity

Rise Time
Fall Time

IF = 100 mA

tr

800

ns

IF = 1.5 A

tr

400

ns

IF = 100 mA

tf

800

ns

IF = 1.5 A

tf

400

ns

Typical Characteristics (Tamb = 25 C unless otherwise specified)

IF Forward Current ( mA)

250

200
150
R thJA
100

PV

- Power Dissipation ( mW )

250

50
0

94 7957

20

40

60

80

Fig. 1 Power Dissipation vs. Ambient Temperature

150
100
RthJA
50
0

100

Tamb - Ambient Temperature ( C )

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200

0
94 7988

20

40

60

80

100

Tamb Ambient Temperature ( C )

Fig. 2 Forward Current vs. Ambient Temperature

Document Number 81056

Rev. 1.4, 08-Apr-04

TSUS540.

VISHAY

Vishay Semiconductors

I e Radiant Intensity ( mW/sr )

I F Forward Current (A)

101

I FSM = 2.5 A ( Single Pulse )

tp/T=0.01
100

0.05
0.1
0.5

1.0
101
102
94 7989

100

100

101
102
103
I F Forward Current ( mA )

94 7997

104

Fig. 6 Radiant Intensity vs. Forward Current

Radiant Power ( mW)

e

1000

10 3
10 2
10 1
10 0
10 -1

TSUS 5402
100
TSUS5400
10

0.1
0

V F - Forward Voltage ( V )

94 7996

100

101
102
103
I F Forward Current ( mA )

94 7998

104

Fig. 7 Radiant Power vs. Forward Current

Fig. 4 Forward Current vs. Forward Voltage

1.6

1.2
1.1

1.2
I e rel ; e rel

I F = 10 mA
1.0
0.9

I F = 20 mA

0.8

0.4

0.8

0
-10 0 10

0.7
0
94 7990

TSUS5400

10

102

10 4
I F - Forward Current ( mA )

TSUS 5401
TSUS 5402

1
101
100
101
tp Pulse Duration ( ms )

Fig. 3 Pulse Forward Current vs. Pulse Duration

V Frel - Relative Forward Voltage

1000

20

40

60

80

100

T amb - Ambient Temperature ( C )

Fig. 5 Relative Forward Voltage vs. Ambient Temperature

Document Number 81056

Rev. 1.4, 08-Apr-04

94 7993

50

100

140

T amb - Ambient Temperature ( C )

Fig. 8 Rel. Radiant Intensity/Power vs. Ambient Temperature

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VISHAY

Vishay Semiconductors

e rel - Relative Radiant Power

1.25
1.0

0.75
0.5

0.25
I F = 100 mA
0
900

1000

950
- Wavelength ( nm )

94 7994

Fig. 9 Relative Radiant Power vs. Wavelength

I e rel Relative Radiant Intensity

10

20

30

40
1.0
0.9

50

0.8

60
70

0.7

80
0.6

0.4

0.2

0.2

0.4

0.6

94 7999

Fig. 10 Relative Radiant Intensity vs. Angular Displacement

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Document Number 81056

Rev. 1.4, 08-Apr-04

TSUS540.

VISHAY

Vishay Semiconductors
Package Dimensions in mm

96 12119

Document Number 81056

Rev. 1.4, 08-Apr-04

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VISHAY

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 81056

Rev. 1.4, 08-Apr-04