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Woven Electronic Fibers with Sensing and Display

Functions for Smart Textiles
By Kunigunde Cherenack,* Christoph Zysset, Thomas Kinkeldei, Niko Mnzenrieder,
and Gerhard Trster
The convergence of electronic components and advanced fibers
with man-made textiles straddles the fields of materials science and digital electronics. Such smart textiles (also known
as electronic or e-textiles) fall into the category of intelligent
materials that sense and respond to environmental stimuli.[1]
Within the field of wearable computing, smart textile applications range from medical monitoring of physiological signals,[2]
including heart-rate,[3] guided training, and rehabilitation of
athletes,[4] to assistance for emergency first-responders,[5] and
to commercial applications where electronics including iPod
controls, displays, and keyboards are integrated into every day
clothing.[6] Smart textile research is still in its infancy and there
is little understanding of the mechanically demanding environment that electronic circuits face during integration into textiles
and subsequent wearing of the smart textile inside clothing. To
maintain essential textile properties such as drapability, smart
textiles are evolving to integrate more electronic functions at
the fiber level,[7] but most fibers are limited to a single functionality (e.g., electrical conductivity). In comparison to flexible display applications that are intended to be rolled around cylinders
with diameters of a few centimeters, smart textile fibers may be
exposed to bending radii much smaller than 1 millimeter and
large tensile strains. We have developed a method of combining
thin-film flexible electronic devices including sensors and transistors, interconnect lines, and commercial integrated circuits
with plastic fibers (e-fibers) that can be woven into textiles
using a commercial manufacturing process. The commercial
integration of flexible thin-film electronics with textiles requires
a multidisciplinary approach, involving knowledge from the
fields of mechanical engineering, materials science, and electrical and textile engineering. Our method creates a platform to
integrate a large variety of flexible electronic circuits, sensors,
and systems on fibers intimately within textile architectures
using a commercial manufacturing approach.[8,9] Electrical
interconnections between adjacent e-fibers are achieved within
the smart textile by using conductive textile threads.
E-fibers are exposed to bending radii as small as 160 m
during weaving, tensile strains 20%, and high surface friction.[10] The cutting process to separate e-fibers from the
process substrate needs to be repeatable and generate smooth
[] Dr. K. Cherenack, C. Zysset, T. Kinkeldei, N. Mnzenrieder,
Prof. G. Trster
Institut fr Elektronik
ETH Zrich, Gloriastr. 35, 8092 (Switzerland)
E-mail: cherenak@ife.ee.ethz.ch

DOI: 10.1002/adma.201002159

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fiber edges and narrow fibers. We are able to repeatedly cut

e-fibers as narrow as 50 m without damaging the substrate
edge.[8] Figure 1a shows a scanning electron microscopy (SEM)
image of several 50-m-wide stripes. Additionally, cleanroom
processes require e-fibers that are resistant to chemicals and
exposure to high temperatures (100 C). To be commercially
viable, smart textiles also need to withstand long-term exposure
to water and chemicals when washing clothing in a standard
washing machine with commercially available detergents.
Therefore the correct choice of materials and optimization of
e-fiber architecture and thin-film device fabrication is critical
for the implementation of the smart textile technology discussed here.
Most recent smart-textile efforts involved attaching commercial off-the-shelf electronic components to textile substrates
such as t-shirts.[11,12] A sophisticated example of this approach
includes the Klight dress[13] developed within the Stella project,
in which a stretchable printed circuit board consisting of meandering elastic-metal interconnect lines connecting conventional electronic components is embedded in a thermoplastic
polyurethane (TPU) substrate that can be ironed on top of
clothing. Researchers have also started investigating the integration of electronic functions into textiles at the yarn level. Examples include the work published by Locher or Martin,[14,15] who
integrated an X-Y grid of copper wires into woven textiles to
form interconnect lines. Other efforts in this area have involved
fabricating thin-film devices on plastic substrates[16,17] or on
fibers[18] that were hand-woven into a loose textile structure but
were not exposed to a commercial manufacturing process. Our
smart textile fabrication method is unique in using a commercial manufacturing approach for weaving textiles, incorporating
flexible thin-film electronic circuits and small integrated circuits on fibers.
E-fibers are fabricated using flexible plastic substrates (50-mthick Kapton E from DuPont) cut into 5-cm-long and <2-mmwide fibers. Figure 1b shows a simplified schematic of the
e-fiber architecture. Kapton was chosen as a substrate due to
its comparatively low coefficient of thermal expansion (CTE) of
16 ppm per C, a high glass transition temperature (Tg) of 355 C,
and good chemical stability. Standard microfabrication techniques
were used to pattern parallel interconnect lines, landing patterns
for integrated circuits, thin-film sensors, and transistors on the
surface of individual e-fibers. A schematic showing e-fiber fabrication steps, including cutting and weaving, is shown in Figure 1c.
Close up pictures of temperature and humidity sensors and
LEDs attached to e-fibers are shown in Figure 1d.
Weaving involves two perpendicular sets of yarns, the warp
and weft, which are interlaced to form a fabric.[19] To weave our

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weaving process by leaving enough space in

the textile to insert the stripe.[10] Two-wire bus
structures were also successfully created in
the textiles by replacing several warp threads
in the weaving machine with conductive
yarns that connect contact pads on adjacent
fibers.[20] Figure 1e shows a schematic of a
two-wire bus structure implemented in a textile using conductive yarn to connect contact
pads on adjacent fibers and Figure 1f shows a
section of an actual textile containing woven
e-fibers with digital temperature sensor integrated circuits (DS18S20 from Maxim-IC
that communicate using a two-wire bus
protocol) connected using conductive yarn.
In this process, stable electrical contact
between the contacts pads on the e-fibers
is achieved using conductive glue[10] coated
with glob-top to provide mechanical stability
during washing. While the cutting process
enabled fabrication of e-fibers as narrow as
50 m, the length (LFIBER) of the e-fibers is
limited by the maximum substrate size processable in our cleanroom. Industrially, this
limitation is easily removed by patterning
devices on flexible substrates using a roll-toroll process.[21] Another limitation on the
size of our current smart textiles is that our
weaving machine only produces 4.5-cm- wide
textile bands. It is, however, important to note
that our weaving process is also compatible
with larger commercial weaving machines.
Electronics on e-fibers can be damaged
(1) during weaving by friction (when e-fibers
are compacted into a dense textile by the
weaving machine) and small applied bending
radii and (2) after weaving by repeated exposure to tensile and bending strains when
the smart textile is worn in clothing. To
protect fibers against friction, e-fibers were
covered with a spray-on layer of silicone
Figure 1. a) SEM image taken of 50-m-wide fibers cut from a Kapton E substrate. b) Sche- before insertion into the machine. A second
matic of the e-fiber architecture. The fiber width, WFIBER, ranges from 500 m to 2 mm, while
encapsulation method to cover e-fibers with
the length, LFIBER, is 50 mm. c) Schematic of our fabrication process. In the first step we attach
or fabricate electronic building blocks onto etched metal interconnect lines, contact pads, and, a Kapton or polyethylene layer was develin the case of temperature e-fibers, thin-film temperature sensors on the surface of a Kapton oped, which shifts device layers close to the
E substrate. Next, the substrate is cut into thin weavable e-fibers using a weaving dice cutter,
neutral bending axis of the material system.
and finally a commercial band weaving machine is used to weave the e-fibers together with During weaving, patterned device layers and
standard textile threads to create a smart textile. d) Close-up views of sensors and LED chips interconnect lines on e-fibers are exposed
on e-fibers. e) Schematic of a two-wire bus structure implemented in a textile using conductive
to bending radii as small as 160 m,
yarn to connect contact pads on adjacent fibers and f) a section of an actual textile containing
which
is a tensile bending strain of 17%.[9]
woven e-fibers with digital temperature sensor integrated circuits that communicate using a
When integrated into clothing, e-fibers in
two-wire bus protocol connected using conductive yarn.
smart textiles may experience strains as
high as 20%, depending on the position
on the body at which the e-fiber is located and the
smart textiles, e-fibers are inserted into the textile along the
textile architecture.[22] While thin-film devices and chips can
weft direction in a commercial band weaving machine. The
be encapsulated locally to minimize deformation, interconnect
warp threads (perpendicular to the e-fibers) are standard 200lines need to stay flexible to maintain essential textile properm-wide non-conductive textile threads. Different e-fiber thickties such as drapability. Interconnect lines were fabricated from
nesses do not significantly impact final textile properties, but
highly ductile 500-nm-thick Cu thin-films. Figure 2a shows the
the fiber dimension needs to be taken into account during the

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applied tensile strain. Figure 2c shows a

damaged solder joint between an integrated
circuit and a landing pattern after tensile test
to failure. The strain that woven sensor fibers
experience in a textile can be adjusted by
choosing a textile weaving pattern[24] that prevents large deformations. When pulling on
textiles that are woven with Atlas (1/7) pattern, it is possible to apply a tensile strain up
to 11.1% to individual yarns, while pulling on
textiles woven with a plain pattern it is only
possible to apply a maximum textile strain of
2.2%. The measurements presented in this
paragraph show that electronic circuits on
e-fibers are robust enough to be woven into a
textile using a commercial weaving machine.
More fragile devices such as our TFTs
need rigid local encapsulation to survive
weaving. Additionally, transistors are exposed
to moderate bending radii (1 cm) and
mechanical vibration during fabrication and
cutting of the stripes and, therefore, need to
be mechanically robust. The flexible TFTs
were tested by rolling them starting with a
flat substrate to an applied tensile bending
radius of 1 cm, then unrolling them again.
This was repeated for 1000 cycles, without
causing a significant change in TFT performance. Figure 2d shows the bending set-up
used to test TFT performance and Figure 2e
shows a TFT stripe. The TFT transfer characteristic is plotted in Figure 2f before and after
the 1000 bending cycles. Finally, TFTs can
be bent to radii as small as 0.25 cm before
failing when encapsulated with a 50-m-thick
flexible layer of polyethylene. The extracted
normalized saturation mobility (SAT) versus
bending radius is shown in Figure 2g). The
mobilities were normalized by their value at
zero strain (i.e., for a flat substrate), o,SAT =
Figure 2. a) The normalized resistance of bare and Kapton encapsulated e-fibers versus
10.5 cm2 V1 s1.
applied bending radius. b) The resistance of bare interconnect lines versus applied tensile
To demonstrate our technology, a 45-mmstrain. c) Damage to the solder joint between attached integrated circuits and landing pads on
wide and 100-mm-long smart-textile band
stripes. d) The TFT bending set-up showing a loaded TFT stripe for bending tests. e) A close of
with e-fibers for temperature and humidity
up the TFT stripe attached to the carrier substrate. f) The TFT electrical performance measured
before and after 1000 bending cycles to a radius of 10 mm. g) The TFT mobility versus applied sensing with four LED e-fibers as indicators
tensile bending radius.
was fabricated. Details on demonstrator fabrication and performance can be found in
normalized resistance of bare and Kapton-encapsulated interthe Experimental Section. Videos of the weaving process and of
connects versus applied tensile bending. Bare interconnect
our demonstrators are posted at http://www.wearable.ethz.ch/
lines rupture at bending radii around 120 m while encapsuresearch/groups/textiles/Textile_video. The work discussed in
lated interconnect lines can be bent to the minimum bending
this paper shows a strategy for full integration of flexible elecradius of 100 m without significant resistance changes. Intertronics within a woven smart textile at the yarn level. Future
connect lines also survive high tensile strains, rupturing after
work will involve interconnection of sensor arrays using tranone-time tensile strains up to 45%, as plotted in Figure 2b.
sistor e-fibers and development of electronic yarns with more
A key to achieving such strain-resistant metal lines is ensuring
complicated thin-film devices and circuits such as flexible difgood adhesion between the metal and the plastic substrate.[23]
ferential amplifiers. The optimization and further developThe highest permissible strain that e-fibers can be exposed to
ment of this textile integration technology will open up a new
is determined by the solder joints between integrated circuits
research direction within wearable computing and promises
and landing patterns on the e-fibers, which fail at around 10%
complete integration of complex circuitry within a textile.

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To demonstrate a smart textile with both passive sensing and active

feedback, a total of 6 e-fibers were woven into a smart textile: four LED
e-fibers to provide colorimetric feedback, 1 temperature-sensing e-fiber,
and 1 humidity-sensing e-fiber. The details of the temperature sensor
fiber fabrication process are described in [8] and the fabrication of LED
fibers is described in [9]. The fabrication of humidity sensing e-fibers
was the same as that used to fabricate LED fibers, except that LED chips
were replaced with capacitive humidity sensor chips (E+E HC109) from
JLC International (New Britain, USA), and that humidity sensors were
attached to the contact pads by gluing (compared to soldering used to
attach LED chips). Fibers were woven into 45-mm-wide and 100-mm-long
textile bands using a commercial weaving machine of Type NFREQ
42 from Mller Frick (Schwelm, Germany). Interconnect lines on woven
e-fibers were exposed to bending radii as small as 165 m.[9] Humidity
and temperature sensors were characterized in a Welltech (Wanchai,
Hong Kong) YTH climate chamber. The temperature was ramped from
10 C to 40 C in steps of 5 C. Each temperature step was held constant
for 1 h. The humidity in the chamber was varied between 20% RH and
80% RH in steps of 5% RH and each step was held for 1 h. The humidity
sensors had a tolerance of 15% and a response time of 6 s. Temperature
sensors had a tolerance of 2.5%. Both humidity and temperature sensing
e-fibers were calibrated before and after weaving to test of the impact of
weaving on sensors but no significant difference in sensor performance
was measured.[8] Temperature sensors were evaluated from 20 C to 100 C
without damaging the textile or interconnect lines and the LEDs used
in the demonstrator have an operation and storage temperature from
40 C to 85 C.
TFTs were fabricated on the 50-m-thick KaptonE substrate from
DuPont (Circleville, USA) (surface area = 7.6 cm 7.6 cm), which was
cleaned by sonication in acetone and isopropanol (IPA) for 10 min and
was then preshrunken in a vacuum oven at 200 C for 24 h to remove
trapped residual solvents.[6] We deposited 150 nm of SiNx on each side
of the substrate using plasma enhanced chemical vapor deposition
(PE-CVD) in an Oxford Instruments (Oxfordshire, UK) PECVD80+. TFTs
had a standard bottom-gate, back channel passivated geometry and
a width/length (W/L) ratio of 280 m/110 m. Following substrate
preparation, 35 nm Cr was deposited using a Univex 500 e-beam evaporator
and patterned gates using standard photolithography (mask 1). 25 nm
of Al2O3 was deposited using atomic layer deposition (ALD) in a Picosun
(Espoo, Finland) Sunale R-150B at 150 C and 15 nm IGZO using RF
sputtering at room temperature. Next, TFT islands were patterned and
etched using standard photolithography (mask 2) and HCl:DI water
1:120.[7] Then gate vias were etched using standard photolithography
(mask 3) and AL-11 etchant from Cyantek (Fremont, USA) heated to
50 C.[8] A MA-N1420 negative photoresist (mask 4) was spin-coated
and patterned and the Ti/Au = 10 nm/60 nm contacts were structured
with a lift-off process. Finally, an additional 25 nm passivation layer of
Al2O3 was deposited and patterned using mask 2. This completes the
TFT fabrication process.
TFT performance for applied bending was tested by attaching TFT
stripes to a reusable carrier substrate and loading the carrier substrate
between two parallel plates into our custom-built bending tester. The
plate spacing was controlled by a LabVIEW (National Instruments,
Austin, USA) controlled DC motor and could be adjusted from 4 mm
(corresponding to a bending radius of 7.8 mm) to a distance where the
substrate was totally flat with a minimum step size of 0.1 mm and at
a maximum speed of 1 mm s1. The actual bending radius applied to
TFTs was measured by fitting circles to images taken using an optical
camera mounted to face the edge of the carrier substrate. TFTs were
mounted as follows: (I) a carrier substrate of Kapton E was coated
with 600 nm of Cu. The copper layer was patterned to form three large
contact pads connected to interconnect lines leading to the center of
the substrate for attachment of TFT stripes. (II) A TFT stripe was cut
from the process substrate using a razor blade and was permanently
attached to the carrier substrate between the three interconnect lines
on the carrier substrate with double sided tape. (III) Electrical contact

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Experimental Section

Figure 3. a) A close up of smart textile band inside the tablecloth.

b) The response of the woven humidity sensors to an experimenter
blowing across the textile. c) The response of the woven temperature
sensors to an experimenter blowing across the textile. d) Damage to the
silicone encapsulation layer after a wash cycle at 60 C.
between the pads on the TFT stripe and the interconnect lines on the
carrier substrate was made using pieces of Cu wire (diameter 0.09 mm)
glued with conductive epoxy EE129 4 from Epoxy Technology (Billerica,
USA). After application, the conductive epoxy needed to be cured 24 h
at room temperature. Three thin cables were soldered to the large
contact pads on the carrier substrate and the free ends of these wires
were attached to a HP4156A parameter analyzer. This set-up allowed for
constant monitoring of the electrical performance of the TFT without
needing to place microprobes onto the TFT electrodes. TFTs were loaded
into our bending tester (facing upwards to apply tensile strain) and the
bending radius was varied from infinite (flat substrate) to 9 mm for a
predetermined number of cycles. TFTs were always loaded to apply strain
parallel to the channel length. All TFTs were characterized before and
after the bending cycles by measuring the TFT transfer characteristics
and extracting the linear mobility LIN, the saturation mobility SAT, and
the threshold voltage VTH using standard equations to model the TFT
current.
The smart textile band developed as a demonstrator was integrated
into a table cloth. E-fibers inside the textile were connected to an external
circuit board where sensor signals were evaluated by a microcontroller,
which turned on the correct LED e-fiber to indicate temperature or
humidity within the textile. Figure 3a shows a close-up of the smart
textile band in the table-cloth. Figure 4 shows the weaving machine used
in this experiment, including a close-up of the weaving region and the
inserted e-fiber. Figure 3b,c show the humidity and temperature sensor
response when the experimenter blows across the surface of the smart
textile. The moisture in his breath causes the moist LED e-fiber to light
up and the temperature causes the hot LED e-fiber to light up. The
e-textile demonstrator with integrated LED e-fibers, temperature sensors,
and humidity sensors was washed multiple times using a ZUG ADORA
L (Zug, Switzerland) washing machine with a mild detergent (Woolite)
at a temperature of 30 C and then at 60 C for 47 min (per cycle).

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[5]

[6]
[7]
[8]
[9]
[10]
Figure 4. A picture of the band weaving machine used and a close up
of the weaving region showing an inserted e-fiber being woven into the
textile band.
[11]
LED brightness and sensor signals were unchanged after the first wash
cycle. However, the silicone encapsulation layer became discolored and
started flaking off the e-fiber surface after the washing cycle at 60 C, as
shown in Figure 3d. Therefore, smart textiles should be washed at lower
temperatures, around 30 C, to ensure long-term stability. Alternatively,
e-fibers can be encapsulated using a second layer of Kapton, which has the
advantage of shifting sensitive device layers to the neutral bending axis.

[12]
[13]

[14]
[15]

Acknowledgements
The authors would like to thank Tnde Kirstein and Sabine Nicoli
from the Schweizerische Textilfachschule and Dr. Christopher Simone
from DuPont for their support of this work. K. Cherenack would like to
thank Prof. Siegfried Bauer from the Johannes Keppler Universitt for
helpful discussions. This work has been scientifically evaluated by the
Swiss National Scientific Foundation (SNSF) and financed by the Swiss
Confederation and Nano-Tera.ch.
Received: June 11, 2010
Revised: August 5, 2010
Published online: October 5, 2010

[16]
[17]
[18]

[19]
[20]

[1] L. van Langenhove, C. Hertleer, Int. J. Clothing Sci. Technol. 2004, 16,
63.
[2] R. Paradiso, G. Loriga, N. Taccini, A. Gemignani, B. Ghelarducci,
J. Telecom. and Inf. Technol. 2005, 4, 105.
[3] M.-H. Cheng, L.-C. Chen, Y.-C. Hung, C. M. Yang, in EMBS 2008:
Proc. 30th Annual IEEE EMBS conference, IEEE Xplore, Piscataway,
NJ, USA 2008, 254.
[4] C. Mattmann, O. Amft, H. Harms, G. Trster, F. Clemens, in ISWC
2007: Proceedings of the 11th IEEE International Symposium on

5182

wileyonlinelibrary.com

[21]
[22]

[23]
[24]

Wearable Computers, IEEE Computer Science Press, Washington,

USA 2007.
F. Axisa, A. Dittmar, G. Delhomme, in Proc. of the 25 Annual International Conference of the IEEE EMBS, IEEE Xplore, Piscataway, NJ,
USA 2003, 3744.
S. Jung, C. Lauterbach, M. Strasser, W. Weber, Int. Symp. Comput.
Commun. Tech. Digest 2003, 386.
S. Wagner, E. Bonderover, W. B. Jordan, J. C. Sturm, Int. J. High
Speed Electron. 2002, 12, 391.
T. Kinkeldei, C. Zysset, K. Cherenack, G. Trster, in Proc. IEEE
Sensors 2009, IEEE Sensors, Piscataway, NJ, USA 2009, 1580.
K. Cherenack, T. Kinkeldei, C. Zysset, G. Trster, IEEE Electron.
Device Lett. 2010, 31, 740.
C. Zysset, K. Cherenack, T. Kinkeldei, G. Trster, in ISWC 2010:
Proceedings of the14th IEEE International Symposium on Wearable
Computers, IEEE Computer Science Press, Washington, USA 2010,
in press.
H. Harms, O. Amft, D. Roggen, G. Trster, in Proc. of the 3rd Int.
Conf. on Body Area Networks (BodyNets) (Ed: D. Gusfield), ACM
press, New York, NY, USA 2008.
S. Park, K. Mackenzie, S. Jayaraman, in Proc. ACM/IEEE DAC
(Ed: D. Gusfield), ACM press, New York, USA 2002, pp. 170.
R. Vieroth, T. Lher, M. Seckel, C. Dils, C. Kallmayer, A. Ostmann,
H. Reichl, in ISWC 2009: Proceedings of the 13th IEEE International
Symposium on Wearable Computers, IEEE Computer Science Press,
Washington, USA 2009, 33.
I. Locher, G. Trster, IEEE Trans. Adv. Packag. 2008, 3, 541.
T. Martin, M. Jones, J. Chong, M. Quirk, K. Baumann, L. Passauer,
Proc. of the 2009 IEEE International Symposium on Wearable
Computers IEEE Computer Science Press, Washington, USA 2009,
157.
E. Bonderover, S. Wagner, IEEE Electron. Device Lett. 2004, 25,
295.
J. B. Lee, V. Subramanian, in IEDM 2003 IEEE Technical Digest IEEE
Xplore, Piscataway, NJ, USA 2004, 8, 3, 1.
F. Clemens, M. Wegmann, T. Graule, A. Mathewson, T. Healy,
J. Donnely, A. Ulsperger, W. Hartmann, C. Papados, Adv. Eng. Mater.
2003, 5, 682.
S. Kovacevic, K. Hajdarovic, A. M. Grancaric, Textile Res. J. 2000, 70,
603.
C. Zysset, K. H. Cherenack, T. Kinkeldei, G. Trster, in Proc. ISWC
2010 2010, IEEE Computer Science Press, Washington, USA 2010,
in press.
R. F. Service, Science 1997, 278, 383.
C. Mattman, T. Kirstein, G. Trster, in Proc. 1st International
Conference on Intelligent Ambience and Well-being (Ambience05) IOS
Press, Amsterdam, Netherlands 2005, 3719.
N. Lu, X. Wang, Z. Suo, J. Vlassak, Appl. Phys. Lett. 2007, 91,
221909.
Weaving, http://en.wikipedia.org/wiki/Weaving, (accessed September
2010).

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