BAV99 200 Ma 70 V High Conductance Ultra-Fast Switching Diode

BAV99
200 mA 70 V High Conductance Ultra-Fast Switching

Diode
Features
Description
The BAV99 is a 350 mW high-speed switching diode

array with series-pair diode configuration. It achieves
high-current conductivity, up to 200 mA, in a very small
7mm2 footprint. These features make the BAV99 optimal
for area-constrained applications that need a little extra
power capability.
High Conductance: IF = 200 mA

Fast Switching Speed: trr < 6 ns Maximum
Small Plastic SOT-23 Package
Series-Pair Configuration
For common cathode and common anode high-speed

switching diodes, explore Fairchild's BAV70 and BAW56.
Looking for more options in the SOT-23 package? Check
Fairchild's MMBD family.
Applications
High-Speed Switching Applications
Connection Diagram
3
3
3
A7
2
1
1
1
SOT-23
Ordering Information
Part Number
Marking
Package
Packing Method
BAV99
A7
SOT-23 3L
Tape and Reel, Reel 7 inch
BAV99_D87Z
A7
SOT-23 3L
Tape and Reel, Reel 13 inch
2001 Fairchild Semiconductor Corporation

BAV99 Rev. 1.1.0
www.fairchildsemi.com
1
BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode
April 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.
Symbol
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
70
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-Repetitive Peak
Forward Surge Current
TSTG
Storage Temperature Range
-55 to +150
Operating Junction Temperature Range
-55 to +150
TJ
Parameter
Pulse Width = 1.0 Second
1.0
Pulse Width = 300 Microseconds
8.0
Note:
1. These ratings are based on a maximum junction temperature of 150C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25C unless otherwise noted.
Symbol
PD
RJA
Parameter
Value
Unit
Power Dissipation
350
mW
Thermal Resistance, Junction to Ambient
357
C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25C unless otherwise noted.
Symbol
VR
VF
IR
CT
trr
Parameter
Breakdown Voltage, per Diode
Forward Voltage, per Diode
Conditions
IR = 100 A
Max.
70
Unit
V
IF = 1 mA
715
IF = 10 mA
855
IF = 50 mA
1.00
IF = 150 mA
1.25
mV
V
VR = 70 V
2.5
VR = 25 V, TA = 150C
30.0
VR = 70 V, TA = 150C
50.0
Total Capacitance, per Diode
VR = 0 V, f = 1.0 MHz
1.5
pF
Reverse-Recovery Time,
per Diode
IF = IR = 10 mA,
IRR = 1 mA,
RL = 100
6.0
ns
Reverse Leakage, per Diode

BAV99 Rev. 1.1.0
Min.
2
Absolute Maximum Ratings(1)
150
140
130
120
110
1
Ta= 25 C
300
Reverse Current, IR [nA]
Reverse Voltage, V R [V]
Ta= 25 C
10
20
30
50
250
200
150
100
50
100
10
20
Reverse Current, IR [uA]
30
50
70
100
Reverse Voltage, V R [V]
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Reverse Voltage vs. Reverse Current
Ta= 25 C
Ta= 25 C
700
Forward Voltage, VF [mV]
Forward Voltage, VF [mV]
450
400
350
300
650
600
550
500
250
450
1
10
20
30
50
100
0.1
0.2
0.3
0.5
10
Forward Current, IF [mA]
Forward Current, IF [uA]
Figure 4. Forward Voltage vs. Forward Current

VF - 0.1 to 10 mA

VF - 1 to 100 A
1.3
Ta= 25 C
Ta= 25 C
Total Capacitance [pF]
Forward Voltage, VF [V]
1.4
1.2
1.0
0.8
0.6
10
20
30
50
100
200
300
1.1
1.0
500
Forw ard C urrent, I F [m A ]
10
12
14
R everse V oltage [V ]
Figure 6. Total Capacitance vs. Reverse Voltage

VF - 10 to 800 mA

BAV99 Rev. 1.1.0
1.2
3
Typical Performance Characteristics
400
Ta= 25 C
3.5
300
3.0
Current [mA]
Reverse Recovery Time [ns]
4.0
2.5
2.0
200
IF
(A V
-A
VE
RA
GE
RE
CT
100
1.5
IF IE
DC
UR
RE
NT
-m
A
1.0
10
20
30
40
50
60
50
100
150
o
Reverse Current [mA]
Ambient Temperature, T A [ C]
Figure 8. Average Rectified Current (IF(AV)) vs.

Ambient Temperature (TA)
Figure 7. Reverse-Recovery Time vs.

Reverse Current
Power Dissipation, PD [mW]
500
400
300
SOT-23 Pkg
200
100
0
0
25
50
75
100
125
150
175
200
Average Tem perature, [ C]
Figure 9. Power Derating Curve

BAV99 Rev. 1.1.0
4
Typical Performance Characteristics (Continued)
Physical Dimensions
SOT-23
0.95
2.920.20
3
1.40
1.30+0.20
-0.15
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
2.400.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

BAV99 Rev. 1.1.0
5
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Saving our world, 1mW/W/kW at a time

SignalWise
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Solutions for Your Success
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
Fairchild Semiconductor Corporation

BAV99 200 Ma 70 V High Conductance Ultra-Fast Switching Diode

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BAV99 200 Ma 70 V High Conductance Ultra-Fast Switching Diode

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BAV99

200 mA 70 V High Conductance Ultra-Fast Switching

The BAV99 is a 350 mW high-speed switching diode

High Conductance: IF = 200 mA

For common cathode and common anode high-speed

Tape and Reel, Reel 7 inch

Tape and Reel, Reel 13 inch

2001 Fairchild Semiconductor Corporation