2N7002E

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

V(BR)DSS

RDS(ON) max

ID max
TA = +25C

Low On-Resistance

Low Gate Threshold Voltage

60V

3 @ VGS = 10V

300mA

Low Input Capacitance

Fast Switching Speed

Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

ideal for high efficiency power management applications.

Mechanical Data

Applications

Motor Control
Power Management Functions

Case: SOT23

Case Material: Molded Plastic, Green Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3

Weight: 0.008 grams (approximate)

Drain

SOT23

Gate

Source

Top View
Pin Out Configuration

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number
2N7002E-7-F
2N7002E-13-F
Notes:

Case
SOT23
SOT23

Packaging
3,000/Tape & Reel
10,000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Date Code Key

Year
2003
Code
P
Month
Code

Jan
1

K7B

Chengdu A/T Site

Shanghai A/T Site

2004
R

2007
U

2005
S

Feb
2

2N7002E
Document number: DS30376 Rev. 14 - 2

2006
T
Mar
3

Apr
4

K7B = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

YM

K7B

YM

Marking Information

2008
V
May
5

2009
W

2010
X

Jun
6

1 of 5
www.diodes.com

2011
Y
Jul
7

2012
Z
Aug
8

2013
A
Sep
9

2014
B
Oct
O

2015
C

2016
D
Nov
N

2017
E
Dec
D

August 2013
Diodes Incorporated

2N7002E
Maximum Ratings (@TA = +25C, unless otherwise specified.)
Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

Drain-Gate Voltage RGS 1.0M

VDGR

60

Continuous
Pulsed

VGSS

20
40

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Steady
State

TA = +25C
TA = +70C

ID

250
200

mA

Continuous Drain Current (Note 6) VGS = 10V

Steady
State

TA = +25C
TA = +70C

ID

300
240

mA

IS

500

mA

IDM

800

mA

Value
370
540
348

Units

241

C/W

Maximum Body Diode Forward Current (Note 6)

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Thermal Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic

Symbol
(Note 5)
(Note 6)
(Note 5)

Total Power Dissipation

Thermal Resistance, Junction to Ambient

PD
RJA

(Note 6)
(Note 6)

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

RJC

91

TJ, TSTG

-55 to 150

mW

Electrical Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

BVDSS

60

Test Condition

70

VGS = 0V, ID = 10A

VDS = 60V, VGS = 0V

VGS = 15V, VDS = 0V

IDSS

1.0
500

IGSS

10

nA

VGS(th)

1.0

2.5

VDS = VGS, ID = 250A

RDS (ON)

1.6
2.0

3
4

VGS = 10V, ID = 250mA

VGS = 4.5V, ID = 200mA

ID(ON)

0.8

1.0

gFS

80

mS

Input Capacitance

Ciss

22

50

pF

Output Capacitance

Coss

11

25

pF

Reverse Transfer Capacitance

Crss

2.0

5.0

pF

Gate resistance

Rg

120

Zero Gate Voltage Drain Current

@ TC = +25C
@ TC = +125C

Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance

@ TJ = +25C

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS (Note 8)

Total Gate Charge (VGS = 4.5V)

Qg

223

pC

Gate-Source Charge

Qgs

82

pC

Gate-Drain Charge

Qgd

178

pC

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

tD(ON)

7.0

20

ns

Turn-Off Delay Time

tD(OFF)

11

20

ns

Notes:

VDS = 25V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

VDS = 10V, ID = 250mA

VDD = 30V, ID = 0.2A,

RL = 150, VGEN = 10V, RGEN = 25

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

2N7002E
Document number: DS30376 Rev. 14 - 2

2 of 5
www.diodes.com

August 2013
Diodes Incorporated

2N7002E
2.0

1.0

0.8

1.6
ID, DRAIN CURRENT (A)

ID, DRAIN-SOURCE CURRENT (A)

T A = -55C

0.6

0.4

0.4

0
1
2
4
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ID = 250mA
ID = 75mA

3
4
5
6
7
1
2
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage

VGS = 4.5V

2
VGS = 10V

0
0

2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs. Gate-Source Voltage

0.2
0.6
0.8
0.4
ID, DRAIN CURRENT (A)
Fig. 4 On Resistance vs. Drain Current

1.0

PD, POWER DISSIPATION (mW)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

TA = 125C

0.8

0.2

TA = 25C

1.2

VGS= 4.5V @ 200mA

2
VGS = 10V @ 250mA

350
300
250
200
150
100
50

0
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance vs. Junction Temperature

2N7002E
Document number: DS30376 Rev. 14 - 2

3 of 5
www.diodes.com

50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
0

25

August 2013
Diodes Incorporated

2N7002E

Package Outline Dimensions

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
A

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0
8

All Dimensions in mm

B C

H
K

K1
D

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y
Z

2N7002E
Document number: DS30376 Rev. 14 - 2

Dimensions Value (in mm)

Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35

4 of 5
www.diodes.com

August 2013
Diodes Incorporated

2N7002E

IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2013, Diodes Incorporated
www.diodes.com

2N7002E
Document number: DS30376 Rev. 14 - 2

5 of 5
www.diodes.com

August 2013
Diodes Incorporated