Professional Documents
Culture Documents
Noise Fundamentals
Outline
Noise as a statistical quantity
Noise Power Spectral Density
Two-sided
One-sided
Total area under Sx(f) represents the avg power carried by x(t)
At f0, L1 and C1 resonate, reducing the circuit to only R1. Thus, the
output noise at f0 is simply equal to 4kTR1. At lower or higher
frequencies, the impedance of the tank falls and so does the output
noise.
Bhaskar Banerjee, EERF 6330, Sp2013, UTD
10
If the real part of the impedance seen between two terminals of a passive
(reciprocal) network is equal to Re{Zout}, then the PSD of the thermal noise
seen between these terminals is given by 4kTRe{Zout}
11
A Linear Time Invariant passive with real input and output impedance can
be represented using a Thevenin equivalent circuit with the PSD given by
4kTRout.*
*cf. A. Papoulis, Probability, Random Variables, and Stochastic Processes, 3rd ed., New York: McGraw Hill, 1991.
Bhaskar Banerjee, EERF 6330, Sp2013, UTD
12
Noise in MOSFETs
13
Example: If W = 1 m, L = 45 nm,
and sheet resistance = 15 , then
the gate resistance, RG = 333 .
14
Flicker Noise
15
16
17
18
Noise Voltage
Noise Current
19
Importance of Impedances in NF
20
SN Rin
NF =
SN Rout
(Vn + In RS )2
NF = 1 +
4kT RS
For simulation purposes, we can rewrite NF as:
2
Vn,out
1
NF =
A2 4kT RS
21
22
23
2
Vn,out
RP
A=
R S + RP
(RS + RP )2
1
RS
24
This result implies that the NF falls as RS rises. Does this mean that, even
though the amplifier remains unchanged, the overall system noise
performance improves as RS increases?!
25
2
Pin
Vin
Rout
L=
= 2
Pout
V T H RS
2
Vn,out
2
RL
= 4kT Rout
(RL + Rout )2
VT H
RL
Av =
Vin RL + Rout
2
Vin
1
N F = 4kT Rout 2
=L
VT H 4kT RS
Bhaskar Banerjee, EERF 6330, Sp2013, UTD
26
Source Resistance
27
28
Noise Figure:
29
Optimum RS:
30
31
32
33
Noise Parameters
Four Noise Parameters:
Minimum Noise Figure (NFmin)
Noise Resistance (Rn)
Optimum Source Conductance (Gs,opt)
NF
NFmin
Rn
Bs,opt
Bs
Gs,opt
Gs
Bhaskar Banerjee, EERF 6330, Sp2013, UTD
34