Code No: 21082 RR Set No.

2
I IB.Tech
B.TECH SUPPLEMENTARY
I Semester EXAMINATIONS
Supplimentary JANUARY- 2010
Examinations,January 2010
SOLID STATE PHYSICS
Common to BME, IT, ICE, E.COMP.E, ETM, E.CONT.E, EIE, CSE, ECE,
CSSE, EEE
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Describe an infinite potential well.

(b) Solve the Schrodinger’s wave equation for a particle in a box of width ‘a’ and
hence obtain expressions for the allowed wave functions and discrete energy
values.
(c) A particle is moving in a one-dimensional potential well of infinite height and
of width 25 × 10−10 m. Calculate the probability of finding the particle within
an interval of 5 × 10−10 m at distances a/2 and ‘a’, where ‘a’ is the width of
the well, assuming that the particle is in its least state of energy. [10+6+6]

2. (a) Describe the principle, construction and working of He-Ne laser.

(b) Write the applications of laser. [10+6]

3. (a) Obtain an equation for the conductivity of an intrinsic semiconductor in terms

of carrier concentration and carrrier mobilities. Suggest a method for evaluat-
ing the energy gap of a semiconductor. Explain the temperature dependence
of intrinsic conductivity.
(b) The variation of the resistivity of intrinsic germanium with temperature is
given in the following table: [10+6]
T(K) 385 455 556 714
ρ(Ohm-m) 0.028 0.0061 0.0013 0.000274

Determine the value of Eg .

4. (a) Explain hysteresis curve for a ferro-electric material..

(b) Assuming Lorentz internal field, derive Clausius-Mosotti relation for dielectrics
in a.c. fields and hence define the complex dielectric constant.
(c) Find the total polarisability of CO2 , if its susceptibility is 0.985 × 10−3 . Den-
sity of carbon dioxide is 1.977 kg/m3 . [6+6+4]

5. (a) Explain the terms:

i. Magnetic flux density
ii. Magnetic field strength
iii. Magnetization
iv. Magnetic susceptibility.
How they are related to each other?

1
Code No: 21082 RR Set No. 2
(b) What are hard and soft magnetic materials? Write their characteristic prop-
erties and applications.
(c) The magnetic field strength in silicon is 1000 amp / m. If the magnetic field
susceptibility is -0.3 × 105 ; calculate the magnetization and flux density in
silicon. [6+6+4]

6. (a) Explain the following:

i. edge dislocation
ii. screw dislocation.
(b) Explain the significance of Burgers Vector.
(c) Explain Bragg’s law of X-ray diffraction. [8+4+4]

7. (a) Define co-ordination number and packing factor of a crystal.

(b) Describe the FCC crystal structure.
(c) Obtain an expression for the packing factor of FCC structure. [4+6+6]

8. (a) Elucidate the difference between classical free electron theory and quantum
free electron theory.
(b) Distinguish between conductors, insulators and semiconductors on the basis
of band theory of solids.
(c) For a metal having 6.5 × 1028 conduction electrons per cubic meter, find the
relaxation time of conduction electrons. The metal has resistivity
1.43 × 10−8 Ω-m. [6+6+4]

?????

2
Code No: 21082 RR Set No. 4
II B.Tech
B.TECHISUPPLEMENTARY
Semester Supplimentary Examinations,January
EXAMINATIONS JANUARY- 20102010
SOLID STATE PHYSICS
Common to BME, IT, ICE, E.COMP.E, ETM, E.CONT.E, EIE, CSE, ECE,
CSSE, EEE
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Elucidate the difference between classical free electron theory and quantum
free electron theory.
(b) Distinguish between conductors, insulators and semiconductors on the basis
of band theory of solids.
(c) For a metal having 6.5 × 1028 conduction electrons per cubic meter, find the
relaxation time of conduction electrons. The metal has resistivity
1.43 × 10−8 Ω-m. [6+6+4]

2. (a) Explain hysteresis curve for a ferro-electric material..

(b) Assuming Lorentz internal field, derive Clausius-Mosotti relation for dielectrics
in a.c. fields and hence define the complex dielectric constant.
(c) Find the total polarisability of CO2 , if its susceptibility is 0.985 × 10−3 . Den-
sity of carbon dioxide is 1.977 kg/m3 . [6+6+4]

3. (a) Describe the principle, construction and working of He-Ne laser.

(b) Write the applications of laser. [10+6]

4. (a) Explain the terms:

i. Magnetic flux density
ii. Magnetic field strength
iii. Magnetization
iv. Magnetic susceptibility.
How they are related to each other?
(b) What are hard and soft magnetic materials? Write their characteristic prop-
erties and applications.
(c) The magnetic field strength in silicon is 1000 amp / m. If the magnetic field
susceptibility is -0.3 × 105 ; calculate the magnetization and flux density in
silicon. [6+6+4]

5. (a) Describe an infinite potential well.

(b) Solve the Schrodinger’s wave equation for a particle in a box of width ‘a’ and
hence obtain expressions for the allowed wave functions and discrete energy
values.

3
Code No: 21082 RR Set No. 4
(c) A particle is moving in a one-dimensional potential well of infinite height and
of width 25 × 10−10 m. Calculate the probability of finding the particle within
an interval of 5 × 10−10 m at distances a/2 and ‘a’, where ‘a’ is the width of
the well, assuming that the particle is in its least state of energy. [10+6+6]

6. (a) Explain the following:

i. edge dislocation
ii. screw dislocation.
(b) Explain the significance of Burgers Vector.
(c) Explain Bragg’s law of X-ray diffraction. [8+4+4]

7. (a) Define co-ordination number and packing factor of a crystal.

(b) Describe the FCC crystal structure.
(c) Obtain an expression for the packing factor of FCC structure. [4+6+6]

8. (a) Obtain an equation for the conductivity of an intrinsic semiconductor in terms

of carrier concentration and carrrier mobilities. Suggest a method for evaluat-
ing the energy gap of a semiconductor. Explain the temperature dependence
of intrinsic conductivity.
(b) The variation of the resistivity of intrinsic germanium with temperature is
given in the following table: [10+6]
T(K) 385 455 556 714
ρ(Ohm-m) 0.028 0.0061 0.0013 0.000274

Determine the value of Eg .

?????

4
Code No: 21082 RR Set No. 1
I B.TECH
I B.Tech SUPPLEMENTARY
I Semester SupplimentaryEXAMINATIONS JANUARY-
Examinations,January 2010
2010
SOLID STATE PHYSICS
Common to BME, IT, ICE, E.COMP.E, ETM, E.CONT.E, EIE, CSE, ECE,
CSSE, EEE
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Elucidate the difference between classical free electron theory and quantum
free electron theory.
(b) Distinguish between conductors, insulators and semiconductors on the basis
of band theory of solids.
(c) For a metal having 6.5 × 1028 conduction electrons per cubic meter, find the
relaxation time of conduction electrons. The metal has resistivity
1.43 × 10−8 Ω-m. [6+6+4]

2. (a) Explain hysteresis curve for a ferro-electric material..

(b) Assuming Lorentz internal field, derive Clausius-Mosotti relation for dielectrics
in a.c. fields and hence define the complex dielectric constant.
(c) Find the total polarisability of CO2 , if its susceptibility is 0.985 × 10−3 . Den-
sity of carbon dioxide is 1.977 kg/m3 . [6+6+4]

3. (a) Explain the terms:

i. Magnetic flux density
ii. Magnetic field strength
iii. Magnetization
iv. Magnetic susceptibility.
How they are related to each other?
(b) What are hard and soft magnetic materials? Write their characteristic prop-
erties and applications.
(c) The magnetic field strength in silicon is 1000 amp / m. If the magnetic field
susceptibility is -0.3 × 105 ; calculate the magnetization and flux density in
silicon. [6+6+4]

4. (a) Define co-ordination number and packing factor of a crystal.

(b) Describe the FCC crystal structure.
(c) Obtain an expression for the packing factor of FCC structure. [4+6+6]

5. (a) Describe the principle, construction and working of He-Ne laser.

(b) Write the applications of laser. [10+6]

6. (a) Explain the following:

5
Code No: 21082 RR Set No. 1
i. edge dislocation
ii. screw dislocation.
(b) Explain the significance of Burgers Vector.
(c) Explain Bragg’s law of X-ray diffraction. [8+4+4]

7. (a) Obtain an equation for the conductivity of an intrinsic semiconductor in terms

of carrier concentration and carrrier mobilities. Suggest a method for evaluat-
ing the energy gap of a semiconductor. Explain the temperature dependence
of intrinsic conductivity.
(b) The variation of the resistivity of intrinsic germanium with temperature is
given in the following table: [10+6]
T(K) 385 455 556 714
ρ(Ohm-m) 0.028 0.0061 0.0013 0.000274

Determine the value of Eg .

8. (a) Describe an infinite potential well.

(b) Solve the Schrodinger’s wave equation for a particle in a box of width ‘a’ and
hence obtain expressions for the allowed wave functions and discrete energy
values.
(c) A particle is moving in a one-dimensional potential well of infinite height and
of width 25 × 10−10 m. Calculate the probability of finding the particle within
an interval of 5 × 10−10 m at distances a/2 and ‘a’, where ‘a’ is the width of
the well, assuming that the particle is in its least state of energy. [10+6+6]

?????

6
Code No: 21082 RR Set No. 3
I B.TECH
I B.Tech SUPPLEMENTARY
I Semester EXAMINATIONS
Supplimentary JANUARY- 2010
Examinations,January 2010
SOLID STATE PHYSICS
Common to BME, IT, ICE, E.COMP.E, ETM, E.CONT.E, EIE, CSE, ECE,
CSSE, EEE
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Obtain an equation for the conductivity of an intrinsic semiconductor in terms

of carrier concentration and carrrier mobilities. Suggest a method for evaluat-
ing the energy gap of a semiconductor. Explain the temperature dependence
of intrinsic conductivity.
(b) The variation of the resistivity of intrinsic germanium with temperature is
given in the following table: [10+6]
T(K) 385 455 556 714
ρ(Ohm-m) 0.028 0.0061 0.0013 0.000274

Determine the value of Eg .

2. (a) Explain hysteresis curve for a ferro-electric material..

(b) Assuming Lorentz internal field, derive Clausius-Mosotti relation for dielectrics
in a.c. fields and hence define the complex dielectric constant.
(c) Find the total polarisability of CO2 , if its susceptibility is 0.985 × 10−3 . Den-
sity of carbon dioxide is 1.977 kg/m3 . [6+6+4]

3. (a) Define co-ordination number and packing factor of a crystal.

(b) Describe the FCC crystal structure.
(c) Obtain an expression for the packing factor of FCC structure. [4+6+6]

4. (a) Explain the terms:

i. Magnetic flux density
ii. Magnetic field strength
iii. Magnetization
iv. Magnetic susceptibility.
How they are related to each other?
(b) What are hard and soft magnetic materials? Write their characteristic prop-
erties and applications.
(c) The magnetic field strength in silicon is 1000 amp / m. If the magnetic field
susceptibility is -0.3 × 105 ; calculate the magnetization and flux density in
silicon. [6+6+4]

5. (a) Describe the principle, construction and working of He-Ne laser.

7
Code No: 21082 RR Set No. 3
(b) Write the applications of laser. [10+6]

6. (a) Elucidate the difference between classical free electron theory and quantum
free electron theory.
(b) Distinguish between conductors, insulators and semiconductors on the basis
of band theory of solids.
(c) For a metal having 6.5 × 1028 conduction electrons per cubic meter, find the
relaxation time of conduction electrons. The metal has resistivity
1.43 × 10−8 Ω-m. [6+6+4]

7. (a) Explain the following:

i. edge dislocation
ii. screw dislocation.
(b) Explain the significance of Burgers Vector.
(c) Explain Bragg’s law of X-ray diffraction. [8+4+4]

8. (a) Describe an infinite potential well.

(b) Solve the Schrodinger’s wave equation for a particle in a box of width ‘a’ and
hence obtain expressions for the allowed wave functions and discrete energy
values.
(c) A particle is moving in a one-dimensional potential well of infinite height and
of width 25 × 10−10 m. Calculate the probability of finding the particle within
an interval of 5 × 10−10 m at distances a/2 and ‘a’, where ‘a’ is the width of
the well, assuming that the particle is in its least state of energy. [10+6+6]

?????