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SemiWell Semiconductor
Symbol
3. Drain
2. Gate
General Description
1. Source
TO-92
Parameter
Value
Units
60
200
mA
500
mA
IDM
VGS
20
0.4
3.2
mW
- 55 ~ 150
300
PD
TSTG, TJ
TL
(Note 1)
Thermal Characteristics
Symbol
RJA
Parameter
Thermal Resistance, Junction-to-Ambient
Value
Min.
Typ.
Max.
312.5
Units
C/W
1/6
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2N7000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
60
Off Characteristics
BVDSS
BVDSS/
TJ
ID = 250uA, referenced to 25 C
48
mV/C
IDSS
1
1000
uA
100
nA
-100
nA
IGSS
On Characteristics
VGS(th)
1.0
2.5
RDS(ON)
VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
1.55
1.9
5
5.3
Dynamic Characteristics
Ciss
Input Capacitance
20
25
Coss
Output Capacitance
11
14
Crss
18
2.5
15
17
44
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Fall Time
Qg
Qgs
Gate-Source Charge
Qgd
ns
24
0.5
0.65
0.15
0.2
Min.
Typ.
Max.
Unit.
200
mA
1.2
nC
Parameter
Test Conditions
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width 300us, Duty Cycle 2%
3. Essentially independent of operating temperature.
2/6
(Note 2)
2N7000
Fig 2. Transfer Characteristics
10
10
Top :
150 C
o
Notes :
1. 250 s Pulse Test
2. TC = 25
-55 C
25 C
Notes :
1. VDS = 10V
2. 250 s Pulse Test
-1
10
10
10
10
2.5
RDS(ON),
Drain-Source On-Resistance [m ]
3.0
VGS = 4.5V
VGS = 10V
2.0
1.5
10
150
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
Note : TJ = 25
1.0
0.0
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0.2
0.4
0.8
1.0
1.2
1.4
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
40
Capacitance [pF]
0.6
Notes :
1. VGS = 0V
2. f=1MHz
30
Ciss
20
Coss
10
Crss
10
VDS = 30V
8
VDS = 48V
6
2
Note : ID = 200 mA
10
15
20
25
30
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3/6
2N7000
Fig 8. On-Resistance Variation
vs. Junction Temperature
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
o
4/6
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
200
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 500 mA
-50
50
100
o
150
200
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
VGS
Same Type
as DUT
50K
Qg
200nF
12V
V
4.5V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 10. Switching Time Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
( 0.5 rated V DS )
10V
V
Pulse
Generator
RG
DUT
Vin
10%
tr
td(on)
t on
td(off)
tf
t off
5/6
2N7000
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
Max.
Min.
4.2
Typ.
0.165
3.7
0.146
4.43
4.83
0.174
0.190
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
0.016
0.174
0.190
0.45
0.017
2.54
0.100
2.54
0.100
0.33
0.48
0.013
0.019
A
E
B
F
G
1
D
2
3
6/6
Max.
1. Source
2. Gate
3. Drain
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