Power Electronics

1. In which aspect the MOSFET may be better than the IGBT?

MOSFET may be better than the IGBT in aspects like:
- High switching capability that is the operational frequencies reach gigahertz.

Alta capacidad de conmutacin que es las frecuencias operativas alcanzan gigahercios.

2. True or false. For a diode, in the reverse-biased voltage large current flows
through the device.
False. In reverse-biased voltage, only a small leakage current flows through the diode.
Falso. En voltaje de polarizacin inversa, slo una pequea corriente de fuga fluye a travs
de los diode.es.
3. Mention three advantages of using MOSFETs.
-High switching capability.
-Simple protection circuits and voltage control.
- Easy paralleling to increase the current values.

-Alta Capacidad de conmutacin.

Circuitos de proteccin -Simple y control de tensin.
- Fcil en paralelo para aumentar los valores actuales.
4. Is a thyristor turned on only by applying positive voltage in the gate? Why
or why not.
No, it isnt. Also, a low-power pulse of gate current switches the thyristor to the on state.
No, no lo es. Tambin, un pulso de bajo consumo de corriente de puerta cambia el tiristor a
la del estado.
5. What happens with the current when the breakdown voltage in a diode is
reached?
When the breakdown voltage in a diode is reached, the current increases dramatically.
6. Would you recommend for a switching device to works in breakdown
operation mode? Why?

No, I wouldnt. In the case of a diode, this breakdown operation leads to excessive power
dissipation that could quickly destroy the device.
7. Why an overvoltage protection is not needed in a JFET?
An overvoltage protection is not needed in a JFET, because the safe operating area is large
due to the absence of the second breakdown.
Una proteccin contra sobretensiones no es necesario en un JFET, porque el rea de
funcionamiento seguro es grande debido a la ausencia de la segunda avera.
8. Nowadays, what is the switching device managing the greatest amount of
power? Which is the second one?
Nowadays, SCR is the switching device managing the greatest amount of power. The next
one is GTO.
Hoy en da, SCR es el dispositivo de conmutacin la gestin de la mayor cantidad de
energa. El siguiente es GTO.
9. In thyristor, what is it known as firing angle?
Firing angle could be understood like this:
When a thyristor is supplying by ac, the moment of a thyristor opening should be adjusted
by shifting the control pulse relative to the starting point of the positive alternation of anode
voltage.
ngulo de disparo podra entenderse as:
Cuando un tiristor est suministrando por ac, el momento de una abertura de tiristor se
debe ajustar desplazando el impulso de control con respecto al punto de partida de la
alternancia positiva de la tensin de nodo.
10.In which aspect the MOSFET is worse than the BJT?
The on-state conduction losses of MOSFET are higher, so in this aspect, MOSFET is worse
than the BJT.
Las prdidas de conduccin en estado encendido de MOSFET son ms altos, por lo que en
este aspecto, MOSFET es peor que el BJT.
11.What is the name of the device acting as a bidirectional diode?
The name of the device that acts as a bidirectional diode is diac. It can be triggered into
conduction by reaching a specific voltage value.
El nombre del dispositivo que acta como un diodo bidireccional es diac. Puede ser
provocada en la conduccin al alcanzar un valor especfico de voltaje.
12.Mention two disadvantages of the BJT.
-Relatively slow switching times.
-Inferior safe operating area.
-Relativamente Lentos tiempos de conmutacin.
-Inferior rea de operacin segura.

13.For high power applications would you prefer using a GTO or a thyristor?
Why?
I would prefer to use a GTO because of their capability of handling large voltage and large
currents in applications where high price and high power are allowed.
Yo preferira usar un GTO debido a su capacidad de manejar gran tensin y corrientes
grandes en aplicaciones en alto precio y alta potencia estn permitidos.
14.A triac is equivalent to have?
A triac (bi-directional thyristor) is identified like a three-electrode semiconductor device that
switches conduction on and off during each alternation. It is the equivalent to have the two
reverse-parallel-connected thyristors with the common gate.
Un triac (tiristor bidireccional) se identifica como un dispositivo semiconductor de tres
electrodos que cambia la conduccin dentro y fuera durante cada alternancia. Es el
equivalente a tener los dos tiristores inversa paralelos conectados con la puerta comn.
15.What does the acronym SCR mean?
It means silicon-controlled rectifiers.
16.Is it possible for a thyristor to be turned off by switching off the gate pulse?
No, it isnt. Switching off by gate pulse is impossible.
No, no lo es. Desconexin por impulso de puerta es imposible
17.What does the acronym GTO mean? Can a GTO be turned off? How?
It means gate turn-off thyristors. A GTO can be turned off through applying a powerful
negative current control pulse, to the gate electrode.

Significa puerta tiristores de apagado. A GTO se puede desactivar a travs de la aplicacin

de un potente impulso de control de corriente negativa, al electrodo de puerta.
18.What are the main advantages of using a MOS-controlled thyristor rather
than a GTO?
The main advantages of using a MOS-controlled thyristor rather than a GTO are:
-Much simpler drive requirements (voltage instead of current).
-Faster switching speeds (few microseconds).

Las principales ventajas de la utilizacin de un tiristor controlado por MOS en lugar de un

GTO son:
-Mucho Requisitos motrices simples (voltaje en vez de corriente.

-Las velocidades rapidas de conmutacin (unos pocos microsegundos).

19.In a BJT, what are the operating regions?
The operating regions are:
- Active region.
- Breakdown region.
- Saturation region.