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TOSHIBA Transistor
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Complementary to 2SD1415A
Unit: mm
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
DC
IC
Pulse
ICP
10
IB
0.7
Collector current
Base current
Ta = 25C
Collector power
dissipation
Tc = 25C
Junction temperature
Storage temperature range
PC
2.0
30
A
A
W
Tj
150
Tstg
55 to 150
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
5 k
150
Emitter
2006-11-21
2SB1020A
Electrical Characteristics (Tc = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 100 V, IE = 0
100
IEBO
VEB = 5 V, IC = 0
4.0
mA
V (BR) CEO
IC = 50 mA, IB = 0
100
DC current gain
Turn-on time
hFE (1)
VCE = 3 V, IC = 3 A
2000
15000
hFE (2)
VCE = 3 V, IC = 7 A
1000
IC = 3 A, IB = 6 mA
0.95
1.5
IC = 7 A, IB = 14 mA
1.3
2.0
VBE (sat)
IC = 3 A, IB = 6 mA
1.55
2.5
0.8
2.0
2.5
ton
IB2
Storage time
tstg
IB1
Switching time
IB2
Input
IB1
Output
V
V
15
VCC 45 V
20 s
Fall time
tf
IB1 = IB2 = 6 mA, duty cycle 1%
Marking
B1020A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-21
2SB1020A
IC VCE
IC VCE
10
10
Common emitter
Common emitter
Tc = 100C
2.5 2.0
1.5
6
1.0
IB = 0.5 mA
0
0
(A)
Collector-emitter voltage
2.5 2.0
Collector current IC
Collector current IC
(A)
Tc = 25C
10
1.5
IB = 0.5 mA
4
0
0
12
VCE (V)
IC VCE
VCE (V)
5000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IB = 0.5 mA
25
3000
50
1000
500
VCE = 3 V
200
0.3
Collector-emitter voltage
Common emitter
(A)
Collector current IC
12
Tc = 100C
Tc = 50C
10
10
Collector current IC
12
30
(A)
VCE (V)
VCE (sat) IC
VBE (sat) IC
10
Common emitter
IC/IB = 500
Tc = 50C
100
25
0.3
10
Collector current IC
10
hFE IC
0.1
0.3
10000
Common emitter
0.5
Collector-emitter voltage
10
0
0
1.0
Common emitter
3
Tc = 50C
25
1
(A)
100
0.5
0.3
0.3
30
IC/IB = 500
Collector current IC
10
30
(A)
2006-11-21
2SB1020A
IC VBE
7
Common emitter
Collector current IC
(A)
VCE = 3 V
5
4
Tc = 100C
25
50
3
2
1
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage
2.0
2.4
2.8
3.2
VBE (V)
rth tw
Transient thermal resistance rth (C/W)
100
Curves should be applied in thermal limited area.
30
(2)
10
(1)
3
1
0.3
0.1
0.001
0.01
0.1
Pulse width
10
tw
100
1000
(s)
10
IC max (pulsed)*
1 ms*
100 s*
Collector current IC
(A)
IC max
5
(continuous)
3
10 ms*
100 ms*
DC operation
Tc = 25C
0.5
0.3
0.1
0.05
0.03
10
30
VCEO max
100
300
2006-11-21
2SB1020A
20070701-EN
2006-11-21