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AbstractTwo new wideband four-way out-of-phase slotline
power dividers are proposed in this paper. The half-wavelength
slotlines are employed to construct the presented compact power
dividers. Based on the proposed power-dividing circuit, a
four-way power divider is implemented with compact size and
simple structure. To obtain high isolation among the four output
ports and good output impedance matching, another four-way
out-of-phase slotline power divider with improved isolation
performance is designed by introducing an air-bridge resistor and
two slotlines with isolation resistors. The simulated and measured
results of the proposed power dividers demonstrate reasonable
performance of impedance matching, insertion loss, amplitude
balancing, and isolation among the output ports.
Index TermsWideband, slotline, out-of-phase power divider,
compact, isolation
I. INTRODUCTION
Out-of-phase
power divider
Out-of-phase
power combiner
180
180
0
Input
Output
o
180
180
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Wm
Port 4
Zs,d
Port 3
lm
Ws
Z0
ls
Top layer
Port 1
Zs,s
Z0
, m
Bottom layer
Zs,d
1:n
Zs,s
(a)
Port 3
Port 4
Z0
Port 2
Z0
Port 3
Z0
Port 4
Z0
Port 5
Port 1
Port 2
Port 5
n:1
1:n
ML
SL
ML
Port 2
Port 5
E-field
Port 1
current
(b)
Fig. 2 The proposed power divider (a) structure (b) phase analysis of the
output ports
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Magnitude (dB)
-10
S21(calculated)
S21(simulated)
S11(calculated)
S11(simulated)
-20
(a)
(b)
Fig. 5 Photograph of the fabricated power divider: (a) top view, (b) bottom
view.
-30
3
6
7
8
9
Frequency (GHz)
10
11
12
J 0 (k esWm / 2 )J 0 (k emWs / 2)
2
k es2 + k em
k em
k 2 r
k es2 k1
(1)
Magnitude (dB)
n=
-10
-20
-30
S11(simulated)
S21(simulated)
S31(simulated)
S41(simulated)
S51(simulated)
-40
k1 =
2
k 02 r k es2 k em
= k 0 r res rem
k 2 = k 0 res + rem 1
k es = k 0 res , k em = k 0 rem
Here, rem and res are the effective dielectric constants of the
microstrip line and the slotline, respectively. res can be
determined according to [29].
According to the equivalent circuit (shown in Fig. 3) of the
proposed power divider, the input impedance matching and
transmission performance can be analyzed and synthesized.
The reflection and transmission coefficients of the four-way
slotline out-of-phase power divider can be calculated according
to its equivalent circuit. Therefore, its frequency response can
also be analyzed and optimized. Finally, the optimized
dimensions of the four-way slotline out-of-phase power divider
can be obtained under the desired frequency response. Fig. 4
shows the comparison of the calculated frequency response
from its equivalent circuit with the simulated one by using an
EM simulator (IE3D). It can be seen that they agree well with
each other, which validates the validity of its equivalent circuit.
Moreover, the operation frequency range perhaps can cover the
UWB band (3.1 GHz - 10.6 GHz) after increasing the coupling
of the microstrip-slotline transition.
B. experimental results
According to above analysis method, a compact wideband
four-way out-of-phase slotline power divider is designed by
using the equivalent circuit and the EM simulation about the
-50
6
7
8
9
Frequency (GHz)
S11(measured)
S21(measured)
S31(measured)
S41(measured)
S51(measured)
10
11
12
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190
S32(simulated)
S42(simulated)
S52(simulated)
S43(simulated)
S53(simulated)
S54(simulated)
-6
-8
Isolation (dB)
-4
10
185
S32(measured)
S42(measured)
S52(measured)
S43(measured)
S53(measured)
S54(measured)
-10
S31- S41(measured)
S21- S31(measured)
180
175
-5
-2
-12
170
-14
7
8
9
Frequency (GHz)
10
11
6
7
8
9
Frequency (GHz)
12
10
-10
12
11
-2
S22(simulated)
S33(simulated)
S44(simulated)
S55(simulated)
-4
-6
Bottom
view
S22(measured)
S33(measured)
S44(measured)
S55(measured)
lg
R R0
Port 4
-8
d0
Port 3
lr
lD
R0
-10
WD
Port 5
-12
-14
7
8
9
Frequency (GHz)
10
11
12
Top layer
Port 1
Port 2
Bottom layer
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:1
Input
Zs,d
Zs,s
2Z0
Output
1:n
R/2
2Z0,m
2Z0
Input
Zs
1:n
Z0
Output
Z0
Output
Zs,s
O.C.
SL
ML
SL
ML
ML
(a)
(a)
n:1
Input
0
Zs,d
Zs,s
2Z0
, m
ML
SL
R/2
Zs/2 Zs/2,s
2Z0
SL
ML
(b)
Fig. 11 Equivalent circuit of the presented power divider for
microstrip/slotline in-phase power dividing: (a) even-mode circuit, (b)
odd-mode circuit.
Output
1:n
Input
Output
1:n
Z0
ML
(b)
Fig. 12 Odd mode equivalent circuit of the presented power divider for
slotline/microstrip out-of-phase power dividing circuit (a) odd-mode analysis,
(b) odd-mode impedance matching circuit.
Then,
R 4Z 0
Z + 2Z 0 cot m tan d / n 2 j cot s
j s
= Zs
2
2
(2Z 0 cot m n Z s tan d )
n
2Z 0 R
(2)
R = 4Z 0
(3)
n 2 j cot s
2
=
Z0
Zs
Zs
(4)
Zs =
2
Z0
n2
(5)
cot s = 0
Namely,
s = k 2 , (k = 0, 1, 2, )
(6)
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Z0,r
Z0,r
R0
Output
Cg
Output
ML
(a)
Input Z0,r
2R0
Cg/2
O.C.
(a)
Output
Z0
Z ine
(b)
Fig. 13 Even mode equivalent circuit of the presented power divider for
slotline/microstrip out-of-phase power dividing circuit (a) even-mode
analysis, (b) even-mode impedance matching circuit.
Z ine =
Z0
2 R0
+
j tan r 1 + jR0C g
(7)
Z 0 = Z ine =
Z0
2 R0
+
j tan r 1 + jR0Cg
(8)
Namely,
2 R0
= Z0
1 + ( R0C g ) 2
(9)
2 R02C g
Z0
=
tan r 1 + ( R0C g ) 2
(10)
(b)
Fig. 14 Photograph of the fabricated power divider with isolation resistors: (a)
top view, (b) bottom view.
can be derived as
Z0
(1 + cot r )
(11)
2
It can be seen that R0 = Z 0 / 2 when lr is equal to half
R0 =
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-10
-5
-20
-30
-40
S11(measured)
S21(measured)
S31(measured)
S41(measured)
S51(measured)
S11(simulated)
S21(simulated)
S31(simulated)
S41(simulated)
S51(simulated)
6
7
8
Frequency (GHz)
10
-15
-20
=0.2 mm, W
=0.96
10
11
0
S32(simulated)
S42(simulated)
S52(simulated)
S43(simulated)
S53(simulated)
S54(simulated)
-5
Isolation (dB)
6
7
8
Frequency (GHz)
(a)
S32(measured)
S42(measured)
S52(measured)
S43(measured)
S53(measured)
S54(measured)
-10
-15
-20
6
7
8
Frequency (GHz)
10
11
(b)
Fig. 16 Simulated and measured results of the proposed power divider with
isolation resistors: (a) output return losses, (b) isolation among the output ports
190
S22(measured)
S33(measured)
S44(measured)
S55(measured)
-10
-25
11
S22(simulated)
S33(simulated)
S44(simulated)
S55(simulated)
10
185
S31- S41(measured)
180
S21- S31(measured)
175
170
6
7
8
Frequency (GHz)
-5
10
Magnitude (dB)
-10
11
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication.
8
Fig. 7) to greater than 10 dB (see Fig. 16(b)) over the designed
frequency range. Since the isolation resistors and good
impedance matching circuit have been employed, good
input/output impedance matching and reasonable isolation
between the output ports can be achieved simultaneously.
The measured phase difference between different output
ports is shown in Fig. 17. The phase difference between S31
and S41 is about 02 over a wide frequency range from 3 to
10.5 GHz, while that betweenS21 and S31 is about 1802
from 3.1 to 10.9 GHz.
[7]
IV. CONCLUSION
[11]
[5]
[6]
[8]
[9]
[10]
[12]
[13]
[14]
[15]
[16]
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[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
Copyright (c) 2013 IEEE. Personal use is permitted. For any other purposes, permission must be obtained from the IEEE by emailing pubs-permissions@ieee.org.
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication.
9
[31] J.-X. Chen, C.H.K. Chin, K.W. Lau, and Q. Xue, 180 out-of-phase
power divider based on double-sided parallel striplines, Electron. Lett.,
2006, vol. 42, no. 21, pp. 1229-1230.
[32] A. Al Tanany, A. Sayed, G. Boeck, Design of Class F-1 Power Amplifier
Using GaN pHEMT for Industrial Applications, German Microwave
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