PD - 91657B

IRG4PC50W
INSULATED GATE BIPOLAR TRANSISTOR
C

Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability

VCES = 600V
VCE(on) max. = 2.30V

@VGE = 15V, IC = 27A

n-channel

Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
TO-247AC

Absolute Maximum Ratings

VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
VGE
EARV
PD @ T C = 25C
PD @ T C = 100C
TJ
TSTG

Parameter

Max.

Units

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.

600
55
27
220
220
20
170
200
78
-55 to + 150

V
A

V
mJ
W

C
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA
Wt

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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight

Typ.

Max.

0.24

6 (0.21)

0.64

40

Units
C/W
g (oz)

1
2/7/2000

IRG4PC50W
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES
V(BR)CES/TJ

VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES

IGES

Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600

V
VGE = 0V, IC = 250A
Emitter-to-Collector Breakdown Voltage T 18

V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage 0.41
V/C VGE = 0V, IC = 5.0mA
1.93 2.3
IC = 27A
VGE = 15V
Collector-to-Emitter Saturation Voltage
2.25
IC = 55A
See Fig.2, 5
V
1.71
IC = 27A , TJ = 150C
Gate Threshold Voltage
3.0

6.0
VCE = VGE, IC = 250A
Temperature Coeff. of Threshold Voltage

-11
mV/C VCE = VGE, IC = 1.0mA
Forward Transconductance U
27
41

S
VCE = 100 V, IC = 27A

250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
A

2.0
VGE = 0V, VCE = 10V, TJ = 25C

5000
VGE = 0V, VCE = 600V, TJ = 150C
Gate-to-Emitter Leakage Current

100
nA
VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.

Typ. Max. Units

Conditions
180 270
IC = 27A
24
36
nC
VCC = 400V
See Fig.8
63
95
VGE = 15V
46

33

TJ = 25C
ns
120 180
IC = 27A, VCC = 480V
57
86
VGE = 15V, RG = 5.0
0.08
Energy losses include "tail"
0.32
mJ See Fig. 9, 10, 14
0.40 0.5
31

TJ = 150C,
43

IC = 27A, VCC = 480V

ns
210

VGE = 15V, RG = 5.0

62

Energy losses include "tail"

1.14
mJ See Fig. 10,11, 14
13

nH
Measured 5mm from package
3700
VGE = 0V
260

pF
VCC = 30V
See Fig. 7
68

= 1.0MHz

Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0,

(See fig. 13a)

T Pulse width 80s; duty factor 0.1%.

U Pulse width 5.0s, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4PC50W
100
F o r b o th :

T ria n g u la r w a v e :

D uty cy cle: 50%

TJ = 125C
T s ink = 90C
G ate drive as s pecified

80

Load Current ( A )

P o w e r D is s ip a tio n = 4 0 W

C la m p vo lta g e :
8 0 % o f ra te d

60
S q u a re wa ve:
6 0 % o f ra te d
vo l ta g e
40

20
Ide a l d io de s

0
0.1

10

100

1000

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

I C , Collector-to-Emitter Current (A)

I C , Collector-to-Emitter Current (A)

1000

1000

100

100

TJ = 150 C

TJ = 25 C


10

V
= 15V

20s PULSE WIDTH
GE

1
1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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TJ = 150 C

TJ = 25 C


10

V
= 50V

5s PULSE WIDTH
CC

1
5

10

11

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

IRG4PC50W
60

3.0

V
= 15V

80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

GE

50

40

30

20

10

0
25

50

75

100

125

150


I C = 54 A
2.0


I C = 27 A

I C =13.5 A

1.0
-60 -40 -20

20

40

60

80 100 120 140 160

TJ , Junction Temperature ( C)

TC , Case Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Thermal Response (Z thJC )

0.50
0.20
0.1

0.10
0.05

0.02
0.01

0.01


SINGLE PULSE
(THERMAL RESPONSE)

P DM

t1

t2

0.001
0.00001


Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50W

C, Capacitance (pF)

VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc

6000

Cies

4000

C
oes

2000

C
res

20

VGE , Gate-to-Emitter Voltage (V)

8000

10

12

100

VCE , Collector-to-Emitter Voltage (V)

Total Switching Losses (mJ)

Total Switching Losses (mJ)

10

2.0

1.0

0.0
10

20

30

40

GateResistance
Resistance ((Ohm)
)
RGRG, ,Gate

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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80

120

160

200

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

V CC = 480V
V GE = 15V
TJ = 25 C
I C = 27A

40

QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

3.0

VCC = 400V
I C = 27A

16

0
1

50


5.0
RG = Ohm
VGE = 15V
VCC = 480V


IC = 54 A


IC = 27 A


IC = 13.5 A

0.1
-60 -40 -20

20

40

60

80 100 120 140 160

TJ , Junction Temperature ( C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

IRG4PC50W


RG
TJ
VCC
VGE

1000

= Ohm
5.0
= 150 C
= 480V
= 15V

I C , Collector-to-Emitter Current (A)

Total Switching Losses (mJ)

3.0

2.0


VGE = 20V
T J = 125 oC

100

1.0

10

SAFE OPERATING AREA

1

0.0
0

10

20

30

40

50

I C , Collector-to-emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

60

10

100

1000

VCE , Collector-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

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IRG4PC50W
L

D .U .T.
VC *

50V

RL =
0 - 480V

1 00 0V

480V
4 X I C@25C

480F
960V

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive

Fig. 13b - Pulsed Collector

Load Test Circuit

Current Test Circuit

IC
L
D river*

D .U .T.
VC

Fig. 14a - Switching Loss

Test Circuit

50V
1000V
Q

* Driver same type

as D.U.T., VC = 480V

90 %
10 %

VC

90 %

Fig. 14b - Switching Loss

t d (o ff)

1 0%
IC 5%

Waveforms

tf

tr
t d (o n )

t=5 s
Eon

E o ff
E ts = (E o n +E o ff )

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IRG4PC50W
Case Outline and Dimensions TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 (.0 1 0 ) M D B M

1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-

-A5 .5 0 (.2 1 7)

2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )

2X

-D-

5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4

5 .5 0 (.2 17 )
4 .5 0 (.1 77 )

LEAD
1234-

3
-C-

1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )

2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X

4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )

3X

1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
0 .2 5 (.0 1 0 ) M

3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )

N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .

A S S IG N M E N T S
GATE
COLLE CTO R
E M IT T E R
COLLE CTO R

L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER

0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )

3X
C A S

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/