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Ion Sources

Jason R. Albia
MS Materials Science and Engineering

MSE 214 Vacuum Technology and Thin Film Deposition


University of the Philippines -Diliman
December 2011

Outline
Review
Ionization of Neutral Molecule
Ion Sources
Open and Close Ion Sources: Configuration and Application
1. Axial Ion Source
2. Lattice Ion Source
3. Crossbeam Ion Source
4. Gas-tight Ion Source
5. Sputter Process Monitor Ion Source

Review
Ionization of neutral
gas particles

Admittance of
substance to be
analyzed into the
vacuum chamber

Sorting of Particles
base on m/e

Faraday detector
or secondary
electron emitter

.
Figure 1. Component function of mass spectrometer.

Ionization of Neutral Molecule


.

E= h BE

Figure 3. Schematic of typical electron bombardment facility.


Figure 2. Ionization of neutral atom
in photo-ionization (top) and
electron bombardment (bottom).

Ion density and electron energy


ION CURRENT
Ik+ = i_ le s pk
i=electron current (emission current)
le=mean path length of the electrons,
s=ionization effect cross section K, in 1 /(cm mbar)
pK=partial pressure of the gas component K, in mbar
Figure 4. Ion density as a function of electron energy.

In addition to single, multiple-charge


molecules ions (ABC+, ABC++) and
fractal ions also occur;
ABC+ + 2e
ABC++ + 3e
AB+ + C + 2e
BC+ + A + 2e
A+ + BC + 2e
C+ + AB + 2e
B+ + A + C + 2e

Figure 5. Fractal distribution of CO2.

Filament Consideration

Figure 6. Filament type and their employment.

Ion Source
General Classification
1. Open Ion Source

Open Ion Source is directly connected


with the vacuum chamber. The ion
source, the mass filter and the detector
are surrounded by the same vacuum. This
enables the following applications:
Excellent for UHV to to 10-4 mbar
applications
Simple design and construction reduce
maintenance requirements
Most inexpensive ionizer option
Preferential applications:
Residual Gas Analysis
HV and UHV systems
MBE systems
Ion implant systems

Ion Source
General Classification
1. Open Ion Source

Drawbacks:
Outgassing and Electron Stimulated Desorption
obscure the minimum detectable partial pressure of
gases (H2, H2O,N2, CO, and CO2).

modifies gas composition


may ruin the experiment
Background Interferences
impurities affect the sensitivity of
ionizer

Open Ion Source


Axial Ion Source

Axial and Lattice Ion Source


Features
open ion sources
robust mechanical design
high sensitivity

Lattice Ion Source

Application
residual gas analysis in HVS due to its
open construction
ensure extremely low internal gas
emission
Cross Beam Ion Source

Ion Source
General Classification
2. Close Ion Source

Optimized for applications in rough


and fine vacuum and designed to
analyze atmospheric pressure or
higher.
Minimized background and process gas
interferences
Works in a wide spectrum of gas inlet
pressures (10-4 and 10-2 Torr)
Less pumping speed required than for the
conductance limited source
Ideal for reactive gases and no problems with
hydrogen-containing gases
Applications include:
CVD
vacuum furnaces
fermentation processes
atmospheric process stream sampling
etching

Ion Source
General Classification
2. Close Source Ion

Main Advantage:
The combination of direct sampling and
differential pumping provides the potential
for PPM and sub-PPM detection limits for
even the most pervasive residual gases.
reduces the visibility of spectral overlaps
ESD impurities are reduced

PrismaPlusTM Ion source.

Close Ion Source


Gas-tight Ion Source

Gas-tight and Sputter Process


Monitor Ion Sources

Features
used when limited quantities of
sample gas are present
suppressed the signal background
generated by residual gas (interference
prevention)
analysis is performed at an ion
source pressure that is up to three
orders of magnitude higher
avoid contamination because the
filament is not in direct contact with
sputtering process

Sputter Process Monitor Ion Source

Summary
Ionization
High energy thermionic electrons colliding a neutral atom or complex molecule result to
ionization; the process is called electron bombardment.
The ionization can be single, multiple, or fractional.

Filaments
Tungsten (W 18000C), Rhenium (Re 18000C), Yttriated iridium (Y2O3/Ir 13000C) have
different range of applications.

Ion Sources
Open Ion source - for high-vacuum residual gas analysis; high sensitivity and good linearity
Axial Ion Source
Lattice Ion Source
Crossbeam Ion Source
Close Ion Source - low vacuum application; minimized background and process interference.
Gas-tight Ion Source
Sputter Process Monitor Ion Source

-end-

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