MICROWAVE ENGINEERING

UNIT-1
1. What are waveguides? Explain the following terms:
i.
Phase velocity
ii.
Group velocity
iii.
Cut-off wavelength
2. What do you mean by characteristic impedance of a waveguide? Obtain an
expression for the characteristic impedance in case of rectangular
waveguide.
3. Show that TE01 and TM10 modes do not exist in rectangular waveguide.
4. Derive the expression for transverse fields E x and Hy under TM modes in
rectangular waveguide.
5. Describe a circular waveguide. Obtain field equation in TE mode.
6. What is a microstrip line? How does its characteristic impedance change with
change in width to height ratio?
7. Discuss the different types of losses in microstrip lines.
8. Describe cylindrical cavity. Write down its field equations and derive the
expression for resonant frequency.
9. Define quality factor of a cavity resonator. Derive expression for quality factor
Q of a rectangular cavity resonator.
10.A circular waveguide has a cut-off frequency of 7GHz in dominant mode.
i.
Find inside diameter of guide if it is air filled.
ii.
Determine inside diameter of guide if it is filled with a dielectric of
dielectric

=2.1 and

r =1
UNIT-2

1. What do you mean by microwave passive devices? Describe E-plane tee, Hplane tee and magic tee.
2. What are S-parameters? Why are they used at microwave frequencies to
describe multiport network?
3. Explain the action of rat-race circuit.
4. What are microwave attenuators? Explain with neat sketch
i.
Fixed attenuator
ii.
Variable attenuator
5. What is a phase shifter? Describe rotary-vane attenuator. Show that its [S]
matrix is given by

6. What is a phase shifter? Describe a rotary phase shifter and explain its
principle.
7. Discuss the different directional coupler parameters.

8. What are ferrites? Define Faraday rotation.

9. Show that the scattering matrix of four port circular using magic tees is

10.How a circulator can be used as a duplexer.

UNIT-3
1. What is meant by transit time effect? What are some of the common methods
of overcoming this effect in an ordinary tube?
2. What is velocity modulation? Explain how velocity modulation is utilized in
klystron amplifier.
3. Derive expressions for output power and efficiency in case of two cavity
klystron amplifier.
4. By means of an appropriate diagram explain the operation of a reflex
klystron. Show that the theoretical efficiency of a reflex klystron is 27.78%.
5. Discuss the performance of magnetron. Derive the expression of cyclotron
angular frequency.
6. Explain the construction, principle of operation and working of travelling
wave tube.
7. Explain how a helical travelling wave tube achieves amplification> give its
mathematical analysis.
8. Describe the construction of a backward wave oscillator. Give the mechanism
of its operation.
9. A two cavity klystron amplifier has the following specifications: beam
voltage=900V, beam current=30mA, frequency=8GHz, gap spacing in either
cavity=1mm, spacing between centers of cavities=4cm and effective shunt
impedance=49G. Determine
i.
Electron velocity
ii.
D.C. transit time of electron
iii.
Input voltage for maximum output voltage
iv.
Voltage gain in dB
10.Calculate the modulated velocity of electron if the electron enters the cavity
at the instant when the R.F. signal is at its negative peak. Assume cavity gap
to be 2mm and the frequency of R.F. signal to be 9GHz with peak to peak
value of 10mVand Va =1000V.
UNIT-4
1. Give the construction and operation of a microwave bipolar transistor.

2.
3.
4.
5.

Give the construction of tunnel diode. Explain its volt-ampere characteristics.

Describe the physical structure of JFET. Explain the principle of its operation.
Derive the expression for pinch-off voltage of a FET.
What do you mean by metal semiconductor FET? Give the construction and
explain the operation of MSFET.
6. Define negative differential resistivity. Explain the J-E characteristics of a
Gunn diode.
7. Explain Gunn effect using two valley theory.
8. Explain the construction, fabrication and domain formation of Gunn diode.
9. Explain IMPATT and TRAPATT diodes and compare their performance.
10.Transfer electron diode operates in transit time mode at 10GHz. If the velocity
of propagation of domain is taken as 107 cm/s, calculate the approximate
thickness of the device.

UNIT-5
1. Discuss the microwave measurements versus low frequency measurements.
2. Give the general set up of a microwave bench. Discuss the different parts.
3. Describe a voltage standing wave ratio (VSWR) meter.
4. Explain :
i.
Thermocouple detector
ii.
Bolometer mount technique
iii.
Calorimeter wattmeter technique
5. Explain self-balancing bridge technique for the measurement of power.
6. Explain with block diagram the principle of electronic method of frequency
measurement.
7. What is a wavemeter? How it is used to measure the frequency?
8. Explain the method for measuring VSWR<10.
9. What do you mean by insertion loss and attenuation? Describe any method
for measurement of attenuation.
10.Write a short note on microwave link design.