DG201HS

Vishay Siliconix

High-Speed Quad SPST CMOS Analog Switch

DESCRIPTION

FEATURES

The DG201HS is an improved monolithic device containing

four independent analog switches. It is designed to provide
high speed, low error switching of analog signals. Combining
low on-resistance (25 ) with high speed (tON: 38 ns), the
DG201HS is ideally suited for high speed data acquisition
requirements.

To achieve high voltage ratings and superior switching

performance, the DG201HS is built on a proprietary
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.

BENEFITS

Each switch conducts equally well in both directions when

on, and blocks input voltages to the supply values, when off.

Fast Switching-tON: 38 ns
Low On-Resistance: 25
Low Leakage: 100 pA
Low Charge Injection
TTL/CMOS Logic Compatible
Single Supply Compatibility
High Current Rating: - 30 mA

Pb-free
Available

RoHS*
COMPLIANT

Faster Throughput
Higher Accuracy
Reduced Pedestal Error
Upgrades Existing Designs
Simple Interfacing
Replaces HI201HS, ADG201HS
Space Savings (TSSOP)

APPLICATIONS

Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Integrator Reset Circuits
Choppers
Gain Switching
Avionics

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

LCC

Dual-In-Line, SOIC and TSSOP

D1
IN1

16

IN2

D1

15

D2

14

S2

S1
V-

13

NC

IN2

D2

Key
3

20

19

S1

18

S2

V-

17

V+

NC

16

NC

GND

15

NC

S4

14

S3

V+

GND

12

NC

S4

11

S3

D4

10

D3

IN4

IN3

Top View

IN1

9
D4

10
IN4

11

12

NC IN3
Top View

TRUTH TABLE
Logic
0
1

Switch
ON
OFF

Logic "0" 0.8 V

Logic "1" 2.4 V

13
D3

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 70038
S-71241Rev. G, 25-Jun-07

www.vishay.com
1

DG201HS
Vishay Siliconix
ORDERING INFORMATION
Temp Range

Package

Part Number
DG201HSDJ
DG201HSDJ-E3

16-Pin Plastic DIP

16-Pin Narrow SOIC

DG201HSDY
DG201HSDY-E3
DG201HSDY-T1
DG201HSDY-T1-E3

16-Pin TSSOP

DG201HSDQ
DG201HSDQ-E3
DG201HSDQ-T1
DG201HSDQ-T1-E3

- 40 to 85 C

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

V+ to V-

Unit

44

GND to V-

25
a

Digital Inputs , VS, VD

Continuous Current (Any Terminal)

30

Current, S or D (Pulsed at 1 ms, 10 % duty cycle)

100

Storage Temperature

(A Suffix)

- 65 to 150

(D Suffix)

- 65 to 125

16-Pin Plastic DIPc

Power Dissipation (Package)b

(V-) - 4 to (V+) + 4 or
30 mA, whichever occurs first

16-Pin CerDIP

mA
C

470

900
e

16-Pin Narrow Body SOIC and TSSOP

600

LCC-20d

900

mW

Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/C above 75 C.
d. Derate 12 mW/C above 75 C.
e. Derate 7.6 mW/C above 75 C.

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+

SX
5V
Reg
Level
Shift/
Drive

VV+
DX

INX

GND
V-

Figure 1.
www.vishay.com
2

Document Number: 70038

S-71241Rev. G, 25-Jun-07

DG201HS
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
Parameter

Symbol

VIN = 3 V, 0.8 Vf

Tempb

IS = - 10 mA, VD = 8.5 V
V+ = 13.5 V, V- = - 13.5 V

Room
Full

25

Room
Room
Full
Room
Full
Room
Full

3
0.1

Typc

A Suffix
- 55 to 125 C

D Suffix
- 40 to 85 C

Mind

Maxd

Mind

Maxd

Unit

V-

V+

V-

V+

50
75

Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
rDS(on) Match

VANALOG
rDS(on)

IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage
Current

ID(on)

Full

V+ = 16.5 V, V- = - 16.5 V
VD = 15.5 V
VS= 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = 15.5 V

Digital Control
Input, High Voltage

VINH

Full

Input, Low Voltage

VINL

Full

Input Capacitance
Input Current

CIN
IINH or IINL

Full

0.1
0.1

50
75

%
-1
- 60
-1
- 60
-1
- 60

1
60
1
60
1
60

2.4

-1
- 20
-1
- 20
-1
- 20

1
20
1
20
1
20

2.4
0.8

0.8

VIN under test = 0.8 V, 3 V

Full

RL = 1 k, CL = 35 pF
VS = 10 V, VINH = 3 V
See Figure 2

tOFF2

Room
Full
Room
Full
Room

150

ts

Room

180

Room

-5

Room

85

Room

100

nA

V
pF

-1

-1

60
75
50
70

ns

Dynamic Characteristics
Turn-On Time
Turn-Off Time
Output Settling Time to 0.1 %
Charge Injection

tON
tOFF1

Off Isolation

OIRR

Crosstalk
(Channel-to-Channel)

XTALK

CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0
RL = 1 k, CL = 10 pF
f = 100 kHz
Any Other Channel Switches
RL = 1 k, CL = 10 pF
f = 100 kHz

48
30

Source Off Capacitance

CS(off)

Room

CD(off)

Room

Channel On Capacitance
Drain-to-Source
Capacitance

CD(on)

Room

30

Room

0.5

Room
Full
Room
Full

4.5

CDS(off)

pC

dB

Drain Off Capacitance

VS , VD = 0 V, f = 1 MHz

60
75
50
70

pF

Power Supplies
Positive Supply Current
Negative Supply Current
Power Consumptionc

I+
IPC

V+ = 15 V, V- = - 15 V
VIN = 0 or 5 V

Full

10

10

3.5
-6

mA

-6
240

240

mW

Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.

Document Number: 70038

S-71241Rev. G, 25-Jun-07

www.vishay.com
3

DG201HS
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Specified
V+ = 10.8 V to 16.5 V,
Parameter

Symbol

V- = GND = 0 V, VIN = 3 V, 0.8 Vf

Tempb

Typc

A Suffix
- 55 to 125 C

D Suffix
- 40 to 85 C

Mind

Maxd

Mind

Maxd

Unit

V+

V+

-1
- 20
-1
- 20
-1
- 20

90
120
1
20
1
20
1
20

-1
- 60
-1
- 60
-1
- 60

90
120
1
60
1
60
1
60

Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance

VANALOG
rDS(on)
IS(off)

Switch Off Leakage Current

ID(off)
Channel On Leakage
Current

ID(on) + IS(on)

Full
IS = - 10 mA, VD = 8.5 V
V+ = 10.8 V
V+ = 16.5 V
VS= 0.5 V, 10 V
VD = 10 V, 0.5 V
V+ = 16.5 V
VD = 0.5 V, 10 V

Room
Full
Room
Full
Room
Full
Room
Full

Digital Control
Input, High Voltage

VINH

Full

Input, Low Voltage

VINL

Full

Input Capacitance

CIN

Input Current

Full

65
0.1
0.1
0.1

2.4

0.8

V+ = 16.5 V
VIN under test = 0.8 V, 3 V

Full

RL = 1 k, CL = 35 pF
VS = 2 V, V = 10.8 V
See Figure 2

tOFF2

Room
Full
Room
Full
Room

150

ts

Room

180

Room

10

Room

85

Room

100

IINH or IINL

2.4
0.8

nA

V
pF

-1

-1

50
70
50
70

ns

Dynamic Characteristics
Turn-On Time
Turn-Off Time
Output Settling Time to 0.1 %
Charge Injection

tON
tOFF1

Off Isolation

OIRR

Crosstalk
(Channel-to-Channel)

XTALK

CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0
RL = 1 k, CL = 10 pF
f = 100 kHz
Any Other Channel Switches
RL = 1 k, CL = 10 pF
f = 100 kHz

Source Off Capacitance

CS(off)

Drain Off Capacitance

CD(off)

Channel On Capacitance

CD(on)

VANALOG = 0 V

I+
PC

V+ = 15 V, VIN = 0 or 5 V

Power Supply
Positive Supply Current
Power Consumptionc

f = 1 MHz

50
70
50
70

pC

dB

Room

10

Room

10

Room

30

pF

Full

10

10

mA

Full

150

150

mW

Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com
4

Document Number: 70038

S-71241Rev. G, 25-Jun-07

DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS

25 C, unless otherwise noted

50
r DS(on) Drain-Source On-Resistance ()

r DS(on) Drain-Source On-Resistance ()

70
60
50
5V
40
10 V
30
15 V
20
20 V
10
0
- 20 - 16 - 12

-8

-4

12

16

V+ = 15 V
V- = - 15 V
40
125 C
85 C

30

25 C
20
0 C
- 55 C
10

0
- 15

20

- 10

-5

10

15

rDS(on) vs. VD and Temperature

180

10 nA
V+ = 5 V

160
140
120

1 nA
Leakage

r DS(on) Drain-Source On-Resistance ()

VD Drain Voltage (V)

VD Drain Voltage (V)

rDS(on) vs. VD and Power Supply Voltages

7V

100
80

10 V
60

ID(on)
100 pA

12 V

IS(off), ID(off)

15 V

40
20
0
0

10

12

14

10 pA
- 60 - 40 - 20

16

VD Drain Voltage (V)

20

40

60

80

100 120 140

Temperature (C)

rDS(on) vs. VD and Single Power Supply Voltages

Leakage Currents vs. Temperature

2.5

55

50
Switching Time (ns)

V TH (V)

1.5

45

tON

40

35

0.5

tOFF

30

0
4

10

12

14

16

18

20

Positive Supplies (V)

Input Switching Threshold vs. Supply Voltage

Document Number: 70038

S-71241Rev. G, 25-Jun-07

10

12

14

16

18

20

Supply Voltage (V)

Switching Time vs. Power Supply Voltage

www.vishay.com
5

DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
65

45
V+ = 15 V
V- = - 15 V

60

tON

55
t ON, t OFF (ns)

Switching Time (ns)

40

35

tOFF

30

50
45
tON

40
25
35

tOFF
30

20
- 55

- 25

25

50

75

100

125

Temperature (C)

12

14

16

18

20

Switching Times vs. Power Supply Voltage

Switching Times vs. Temperature

20

50

V+ = 15 V, V- = 0 V

V+ = 10.8 V
V- = 0 V

10

40

Chargie Injection (pC)

45
Switching Time (ns)

10

V+ Positive Supply (V)

tON

35
tOFF
30

- 10
V+ = 15 V
V- = - 15 V

- 20

- 30

25

- 40

20
- 55

- 25

25

50

75

100

- 15

125

- 10

-5

10

Temperature (C)

VS Source Voltage (V)

Switching Times vs. Temperature

Charge Injection vs. Source Voltage

15

120
V+ = 15 V
V- = - 15 V

110
100

RL = 100

OIRR

90
80
70

RL = 1 k

60
50
40
10 k

100 k

1M

10 M

f Frequency (Hz)

Off Isolation vs. Frequency

www.vishay.com
6

Document Number: 70038

S-71241Rev. G, 25-Jun-07

DG201HS
Vishay Siliconix
TEST CIRCUITS
+ 15 V

V+
D

10 V

IN
CL
35 pF

RL
1 k

V-

tr < 20 ns
tf < 20 ns

50 %
0V

VO

3V
GND

3V

Logic
Input

tOFF1

Switch
Input

VS

Switch
Output

VO

90 %
10 %
tON

- 15 V

tOFF2

CL (includes fixture and stray capacitance)

RL

VO = V S

RL + rDS(on)

Figure 2. Switching Time

+ 15 V

V+

Rg

IN

CL
1 nF

3V

INX

V-

GND

VO

VO

VO

SWON

OFF

Q = VO x CL

- 15 V

Figure 3. Charge Injection

V+

S1

VS
V+
S

VS

+ 15 V

+ 15 V

VO

Rg = 50

Rg = 50

D1
50

IN1

0 V, 3 V
RL

IN

NC

0 V, 3 V
GND

V-

0 V, 3 V

S2

D2

VO
RL

IN2
GND

V-

- 15 V
- 15 V
Off Isolation = 20 log

VS
VO

XTA LK Isolation = 20 log

VS
VO

C = RF bypass

Figure 4. Off Isolation

Document Number: 70038

S-71241Rev. G, 25-Jun-07

Figure 5. Crosstalk

www.vishay.com
7

DG201HS
Vishay Siliconix
APPLICATIONS
A high-speed, low-glitch analog switch such as Vishay Siliconixs DG201HS improves the accuracy and shortens the acquisition
and settling times of a sample-and-hold circuit.

Input
Buffer

DG201HS

JFET Buffer
OUTPUT
to A/D Converter

VANALOG
CH
(Polystyrene)

Si581

SAMPLE/HOLD

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70038.

www.vishay.com
8

Document Number: 70038

S-71241Rev. G, 25-Jun-07

Legal Disclaimer Notice

Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com
1