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2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3455
Isolated TO-220
FEATURES
Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A)
Avalanche capability ratings
Isolated TO-220 package
VDSS
500
VGSS
30
ID(DC)
12
ID(pulse)
36
PT1
2.0
PT2
50
Channel Temperature
Tch
150
Storage Temperature
Tstg
55 to +150
Note1
Note2
IAS
12
Note2
EAS
103
mJ
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
2000
2SK3455
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
100
IGSS
VGS = 30 V, VDS = 0 V
100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
| yfs |
VDS = 10 V, ID = 6.0 A
2.0
RDS(on)
VGS = 10 V, ID = 6.0 A
0.50
0.60
Input Capacitance
Ciss
VDS = 10 V
1620
pF
Output Capacitance
Coss
VGS = 0 V
250
pF
Crss
f = 1 MHz
10
pF
td(on)
24
ns
tr
VGS = 10 V
18
ns
td(off)
RG = 10
50
ns
15
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
QG
VDD = 400 V
30
nC
QGS
VGS = 10 V
nC
QGD
ID = 12 A
11
nC
VF(S-D)
IF = 12 A, VGS = 0 V
1.0
trr
IF = 12 A, VGS = 0 V
1.5
Qrr
di/dt = 50 A/ s
11
50
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
ID
90%
90%
BVDSS
IAS
ID
VGS
0
ID
VDS
ID
VDD
Starting Tch
= 1 s
Duty Cycle 1%
50
10%
10%
Wave Form
RL
VDD
td(on)
tr
ton
td(off)
tf
toff
2SK3455
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
35
100
Pulsed
VGS = 20 V
10
ID - Drain Current - A
ID - Drain Current - A
30
10 V
25
20
15
10
TA = 150C
125C
75C
25C
25C
50C
0.1
0.01
5
0
0
10
20
30
0.001
40
VDS = 10 V
Pulsed
0
2.0
1.0
50
150
100
100
VDS = 10 V
ID = 1 mA
3.0
0
50
VDS = 10 V
Pulsed
TA = 50C
25C
25C
75C
125C
150C
10
0.1
0.01
0.1
1.2
1.0
0.8
ID = 12 A
6.0 A
2.4 A
0.6
0.4
0.2
0
10
10
100
ID - Drain Current - A
15
20
1.4
15
10
VGS = 10 V
1.2
20 V
0.9
0.6
0.3
0
0.1
10
100
ID - Drain Current - A
1.6
100
1.4
1.2
ID = 6.0 A
1.0
12 A
0.8
0.6
0.4
0.2
0
50
VGS = 10 V
Pulsed
100
150
50
0V
0.1
Pulsed
1.0
1.5
SWITCHING CHARACTERISTICS
1000
1000
Ciss
100
Coss
10
1
VGS = 0 V
f = 1 MHz
0.1
0.1
Crss
1
10
100
td(off)
td(on)
10
tr
1
VDD = 150 V
VGS = 10 V
RG = 10
0.1
0.1
1000
10
100
ID - Drain Current - A
di/dt = 50 A/ s
VGS = 0 V
1000
100
10
1
0.1
tf
100
10000
10
100
12
VDD = 400 V
250 V
125 V
10
400
VGS
6
200
4
2
VDS
0
ID = 12 A
0
ID - Drain Current - A
0.5
VGS = 10 V
1
0.01
10000
10
10
15
20
25
QG - Gate Charge - nC
30
0
35
2SK3455
2SK3455
100
90
80
70
60
50
40
30
20
10
0
70
20
40
60
80
60
50
40
30
20
10
0
20
TC - Case Temperature - C
40
60
80
100
120
140
160
TC - Case Temperature - C
10
0
ID(DC)
10
n)
(o
DS
d
ite
Lim
10
m
s
3 ms
10 ms
30 ms
100 ms
Power Dissipation Limited
TC = 25C
Single Pulse
0.1
1
10
100
1000
ID - Drain Current - A
ID(pulse) P
W
100
Rth(ch-A) = 62.5C/W
10
Rth(ch-C) = 2.5C/W
1
0.1
0.01
0.001
10
Single Pulse
100
1m
10 m
100 m
1
PW - Pulse Width - s
Data Sheet D14757EJ1V0DS
10
100
1000
2SK3455
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
IAS = 12 A
EAS
10
=1
03
100
mJ
1
VDD = 150 V
VGS = 20 0 V
RG = 25
0.1 Starting Tch = 25C
0.01
0.1
10
100
80
60
40
20
0
25
50
75
100
125
150
L - Inductive Load - mH
VDD = 150 V
RG = 25
VGS = 20 0 V
IAS 12 A
2SK3455
PACKAGE DRAWING (Unit: mm)
1.3 0.2
1.5 0.2
2.54 TYP.
2.54 TYP.
2.7 0.2
13.5 MIN.
4 0.2
0.7 0.1
4.5 0.2
12.0 0.2
3.2 0.2
3 0.1
15.0 0.3
10.0 0.3
EQUIVALENT CIRCUIT
Drain
2.5 0.1
0.65 0.1
Body
Diode
Gate
1.Gate
2.Drain
3.Source
Source
1 2 3
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SK3455
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4
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