May 1996

NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.

48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.

Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.

______________________________________________________________________________

Absolute Maximum Ratings

T C = 25C unless otherwise noted

Symbol

Parameter

NDP6051

VDSS

Drain-Source Voltage

50

VDGR

Drain-Gate Voltage (RGS < 1 M)

50

VGSS

Gate-Source Voltage - Continuous

20

- Nonrepetitive (tP < 50 s)

ID

Drain Current

NDB6051

40

- Continuous

48

- Pulsed

144

PD

Total Power Dissipation @ TC = 25C

TJ,TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Derate above 25C

1997 Fairchild Semiconductor Corporation

Units

100

0.67

W/C

-65 to 175

275

NDP6051 Rev. C1

Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

300

mJ

48

250

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W DSS

Single Pulse Drain-Source Avalanche

Energy

IAR

Maximum Drain-Source Avalanche Current

VDD = 25 V, ID = 48 A

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

IDSS

Zero Gate Voltage Drain Current

VDS = 50 V, VGS = 0 V

50

mA

IGSSF

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

100

nA

IGSSR

Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

-100

nA

TJ = 125C

ON CHARACTERISTICS (Note 1)
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

TJ = 125C

RDS(ON)

Static Drain-Source On-Resistance

2.8

1.4

2.2

3.6

0.018

0.022

0.03

0.04

VGS = 10 V, ID = 24 A
TJ = 125C

ID(on)

On-State Drain Current

VGS = 10 V, VDS = 10 V

gFS

Forward Transconductance

VDS = 10 V, ID = 24 A

60

14

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

1220

pF

520

pF

190

pF

SWITCHING CHARACTERISTICS (Note 1)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

VDD = 30 V, ID = 48 A,
VGS = 10 V, RGEN = 7.5

10

20

nS

132

250

nS

Turn - Off Delay Time

28

55

nS

tf

Turn - Off Fall Time

80

150

nS

Qg

Total Gate Charge

37

53

nC

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = 24 V,
ID = 48 A, VGS = 10V

8
22

NDP6051 Rev. C1

Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS

IS

Maximum Continuos Drain-Source Diode Forward Current

48

ISM

Maximum Pulsed Drain-Source Diode Forward Current

144

VSD

Drain-Source Diode Forward Voltage

0.9

1.3

0.8

1.2

VGS = 0 V, IS = 24 A (Note 1)
TJ = 125C

trr

Reverse Recovery Time

Irr

Reverse Recovery Current

VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/s

35

140

ns

THERMAL CHARACTERISTICS
RJC

Thermal Resistance, Junction-to-Case

1.5

C/W

RJA

Thermal Resistance, Junction-to-Ambient

62.5

C/W

Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

NDP6051 Rev. C1

Typical Electrical Characteristics

VGS = 12V

2.5

10
9.0

80

60

R DS(on) , NORMALIZED

8.0

7.0

40

6.0

20

5.0

1
V

DS

2
3
4
, DRAIN-SOURCE VOLTAGE (V)

DRAIN-SOURCE ON-RESISTANCE

, DRAIN-SOURCE CURRENT (A)

100

7.0
1.5

8.0

10

40
60
, DRAIN CURRENT (A)

80

100

2.5

I D = 24A
R DS(on) , NORMALIZED

V GS = 10V

1.5
1.25
1
0.75

-25

25
50
75
100
125
T , JUNCTION TEMPERATURE (C)

150

DRAIN-SOURCE ON-RESISTANCE

R DS(ON) , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

20

TJ = 125C

1.75
1.5
1.25

25C

-55C

0.75
0.5

175

VGS = 10V

2.25

20

40
60
ID , DRAIN CURRENT (A)

80

100

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 3. On-Resistance Variation

with Temperature.

1.2

T = -55C
J

V DS = 10V
50

25C
V GS(th), NORMALIZED

125C

40

30

20

10

0
2

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

10

GATE-SOURCE THRESHOLD VOLTAGE

60

I D , DRAIN CURRENT (A)

12

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

0.5
-50

Figure 1. On-Region Characteristics.

1.75

9.0

0.5

VGS = 6.0V

V DS = V GS
I D = 250A

1.1
1
0.9
0.8
0.7
0.6
0.5
-50

-25

25
50
75
100
125
T , JUNCTION TEMPERATURE (C)

150

175

Figure 6. Gate Threshold Variation With

Temperature.

NDP6051 Rev. C1

Typical Electrical Characteristics (continued)

50
20

I D = 250A

I , REVERSE DRAIN CURRENT (A)

1.1

1.05

0.95

V GS = 0V

5
2
1

TJ = 125C
25C

0.1

-55C
0.01

0.001

BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE

1.15

0.9
-50

-25

0
T

25
50
75
100
125
, JUNCTION TEMPERATURE (C)

150

175

0.0001
0.2

0.4
0.6
0.8
1
1.2
V , BODY DIODE FORWARD VOLTAGE (V)

1.4

SD

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.

20

CAPACITANCE (pF)

2000

V GS, GATE-SOURCE VOLTAGE (V)

3000

Ciss

VDS = 12V
24V
48V

I D = 48A

15

1000

Coss

10

500

Crss
300

f = 1 MHz
V GS = 0V

200

100

2
V

DS

3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)

30

50

20

40
Q g , GATE CHARGE (nC)

60

80

Figure 10. Gate Charge Characteristics.

Figure 9. Capacitance Characteristics.

VDD
t on

RL

V IN

t d(on)

VGS

R GEN

DUT

tr

V OUT

t off
t d(off)

tf
90%

90%

VOUT

10%

10%
INVERTED

90%
S

V IN

50%

50%
10%
PULSE WIDTH

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

NDP6051 Rev. C1

Typical Electrical Characteristics (continued)

300

gFS, TRANSCONDUCTANCE (SIEMENS)

30

TJ = -55C

V DS=10V

100
I D , DRAIN CURRENT (A)

24

25C

18

125C

12

(O
DS

N)

Lim

it

100

50

1ms
20

10m

10

100

VGS = 10V
SINGLE PULSE
o
RJC = 1.5 C/W
T C = 25C

5
2

DC

s
ms

1
0

0.5
0

10

20
I D, DRAIN CURRENT (A)

30

40

Figure 13. Transconductance Variation with Drain

Current and Temperature.

3
5
10
20
30
VDS , DRAIN-SOURCE VOLTAGE (V))

50

70

Figure 14. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
D = 0.5

0.5
0.3

R JC (t) = r(t) * RJC

R
JC = 1.5 C/W

0.2

0.2
0.1

0.1
P(pk)

0.05

0.05
0.03

t1

0.02
0.01

0.02
0.01
0.01

0.02

0.05

t2

TJ - T C = P * R
JC (t)
Duty Cycle, D = t 1 /t2

Single Pulse

0.1

0.2

0.5

2
5
t1 ,TIME (m s)

10

20

50

100

200

500

1000

Figure 15. Transient Thermal Response Curve.

NDP6051 Rev. C1