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Q11. Assume that a photoconductor in the shape of a bar of length L and area A has a
constant voltage applied across it and it is illuminated such that gop cm3 s1 EHPs are
generated uniformly throughout. If n >> p , we can assume the optically induced
change in current I is dominated by the mobility n and the lifetime n for electrons.
Show that
n
I = qALgop
C
where C is the transit time of electrons drifting down the length of the bar.
Q12. The steady-state minority hole distribution in a semiconductor sample decays exponentially from the plane x = 0. Determine an expression for the hole quasi-Fermi level
Ei Fp (x) while pn (x) >> pn0 . On a band diagram, draw the variation of Fp (x). Be
careful: when the minority carriers are few i.e. pn ni , Fp is very far from Ef .
Q13. Boron is diffused into an intrinsic Si sample giving an exponential acceptor distribution. Sketch the equilibrium energy band diagram and show the direction of the
resulting electric field, for Na (x) >> ni . Repeat for the case of phosphorous diffusion
with Nd (x) >> ni .
Q14. The current required to feed the hole injection at x = 0 is obtained by evaluating
Jp (x) = qDp
dp
d
Dp
= qDp p (x) = q p (x)
dx
dx
Lp
p
Lp
Show that this current can be calculated by integrating the charge stored in the steadystate hole distribution p (x) and then dividing by the average hole lifetime p . Explain
why this approach gives Ip (x = 0).
Q15. We wish to use the Haynes-Shockley experiment to calculate the hole lifetime p in
an n-type sample. Assume the peak voltage of the pulse displayed on the oscilloscope
screen is proportional to the hole concentration under the collector terminal at time td
and that the displayed pulse can be approximated as a Gaussian as
p0
x2
p (x, t) =
exp
4Dp t
2 Dp t
which decays due to recombination as exp (t/ p ). The electric field is varied and the
following data taken: For td = 200 s, the peak is 20 mV ; for td = 50 s, the peak is
80 mV . What is p ?
Q16. Consider a GaAs sample with ni = 106 cm3 at 300 K doped with 1015 cm3 donor
atoms. The sample is illuminated with the 514, 5 nm line of an argon laser. For GaAs
at this wavelength, = 104 cm1 . Calculate and plot the steady-state excess electron
profile n (x) in the region within 5 m of the surface for photon fluxes of 1015 , 1017
and 1019 cm2 s1 using the low-level excitation assumptions and directly solving
gth + gop = r n0 p0 + r (n0 + p0 ) n + (n)2
Q17. For the sample in Q16. calculate and plot the steady-state excess electron concentration profile in the region within 5 m of the surface for a photon flux of 1019 cm2 s1
using the low-level excitation assumptions and directly solving the equation given for
values of r of 109 , 107 and 105 cm3 s1 .
Q18. Using the results obtained in Q16. for a photon flux of 1015 cm2 s1 , calculate and
plot the transient excess carrier profile 1, 2 and 5 ns after the laser flux is interrupted,
by integrating
d
n (t) = r (n0 + p0 ) n (t) + (n (t))2
dt
within the depth interval using r = 106 cm3 s1 . Ignore carrier diffusion.
Q19. Assume an n-type semiconductor bar is illuminated over a narrow region of its length
such that n = p in the illuminated zone and excess carriers diffuse away and
recombine in both directions along the bar. Assuming n (x) = p (x), sketch the
quasi-Fermi levels Fn and Fp over several diffusion lengths from the illuminated zone.
See the cautionary note in Q12.
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Si
Eg (eV )
1, 11
n (cm2 /V -s)
1350
2
p (cm /V -s)
480
r (dielec. const) 11, 8
ni (EHP s/cm3 ) 1, 0 1010
Ge
0, 67
3900
1900
16
2, 5 1013
GaAs
1, 43
8500
400
13, 2
1, 8 106