1N4148W-V

Vishay Semiconductors

Small Signal Fast Switching Diode

Features
These diodes are also available in other
case styles including the DO-35 case
with the type designation 1N4148, the
MiniMELF case with the type designation
LL4148, and the SOT-23 case with the
type designation IMBD4148-V.
Silicon epitaxial planar diode
Fast switching diodes
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

17431

Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table
Part
1N4148W-V

Ordering code

Marking

Remarks

1N4148W-V-GS18 or 1N4148W-V-GS08

A2

Tape and Reel

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Value

Unit

VR

75

VRRM

100

f 50 Hz

IF(AV)

1501)

mA

t < 1 s and Tj = 25 C

IFSM

500

mA

Ptot

3501)

mW

Symbol

Value

Unit

RthJA

3571)

K/W

Junction temperature

Tj

150

Storage temperature

Tstg

- 65 to + 150

Reverse voltage
Repetitive peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation

Symbol

Note:
1)
Valid provided that electrodes are kept at ambient temperature.

Thermal Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Thermal resistance junction to ambient air

Note:
1)
Valid provided that electrodes are kept at ambient temperature.
Document Number 85748
Rev. 1.5, 17-Aug-10

For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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1N4148W-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter
Forward voltage

Leakage current

Test condition

Symbol

Max.

Unit

IF = 10 mA

VF

Min.

Typ.

1000

mV

IF = 100 mA

VF

1200

mV

VR = 20 V

IR

25

nA

VR = 75 V

IR

VR = 100 V

IR

100

VR = 20 V, TJ = 150 C

IR

50

VF = VR = 0 V

CD

pF

Tested with 50 mA pulses,

tp = 0.1 s, rise time < 30 ns,
fp = (5 to 100) kHz

Vfr

2.5

Reverse recovery time

IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100

trr

ns

Rectification efficiency

f = 100 MHz, VRF = 2 V

Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)

0.45

Rectification Efficiency Measurement Circuit

60

2 nF
VRF = 2 V

5 k
VO

17436

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For technical questions within your region, please contact one of the following: Document Number 85748
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.5, 17-Aug-10

1N4148W-V
Vishay Semiconductors
Typical Characteristics
Tamb = 25 C, unless otherwise specified
103
Tj = 25 C

1.1

f = 1 MHz

102
Tj = 25 C

1.0

CD (VR)

CD (0 V)

IF (mA)

Tj = 100 C
10

0.9

0.8
10-1
0.7
10-2
1

17437

Figure 1. Forward characteristics

104

0
17440

VF (V)

10

VR (V)

104
5

f = 1 kHz

103

103

IR (nA)

Rf ()

Figure 4. Relative Capacitance vs. Reverse Voltage

Tj = 25 C

102
5

102
5
2

10

10

VR = 20 V

1
10-2

10-1

17438

10

102
17441

IF (mA)

Figure 2. Dynamic Forward Resistance vs. Forward Current

100

200

Tj (C)

Figure 5. Leakage Current vs. Junction Temperature

500

Ptot - Power Dissipation (mW)

450
400
350
300
250
200
150
100
50
0
0
20809

50
100
Tamb - Ambient Temperature (C)

150

Figure 3. Admissible Power Dissipation vs. Ambient Temperature

Document Number 85748

Rev. 1.5, 17-Aug-10

For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com
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1N4148W-V
Vishay Semiconductors

100
5
4
3
2

IFRM (A)

T = 1/fP

IFRM

10
5
4
3
2

n = tP/T
tP

n=0

0.1
0.2
0.5

5
4
3
2

0.1
10-5

10-4

10-3

10-2

10-1

10

tP (s)

17442

Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration

0.10 (0.004)

0.15 (0.006)

8
0.45 (0.018)
0.25 (0.010)

0 to

0.2 (0.008)

1 (0.039)

1.35 (0.053)

0.1 (0.004) max.

Package Dimensions in millimeters (inches): SOD-123

0.5 (0.020) ref.

Cathode bar

Mounting Pad Layout

2.85 (0.112)
2.55 (0.100)
0.85 (0.033)

2.5 (0.098)

0.85 (0.033)

3.55 (0.140)

1.7 (0.067)

3.85 (0.152)

1.40 (0.055)

0.45 (0.018)

0.65 (0.026)

0.85 (0.033)

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)
17432

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4

For technical questions within your region, please contact one of the following: Document Number 85748
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.5, 17-Aug-10

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Document Number: 91000

Revision: 11-Mar-11

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