+

PIN 3

CASE
PIN 2

Positive CT

Features

PIN 1

Low forward voltage drop.

PIN 3

High surge current capacity.

High current capability.

FEP16AT - FEP16JT

FEP16AT - FEP16JT

PIN 1

CASE
PIN 2

Negative CT
Suffix "A"
1

2
3

TO-220AB

High reliability.

PIN 1

AC

PIN 3

CASE
PIN 2

Doubler
Suffix "D"

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*
Symbol
VRRM
IF(AV)
IFSM

Tstg
TJ

TA = 25C unless otherwise noted

Value

Parameter

Units

16AT

16BT

16CT

16DT

16FT

16GT

16HT

16JT

50

100

150

200

300

400

500

600

Maximum Repetitive Reverse

Voltage
Average Rectified Forward Current,
.375 " lead length @ TA = 100C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature

16

200

-55 to +150
-55 to +150

C
C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol

Parameter

Value

Units

PD

Power Dissipation

8.33

RJA

Thermal Resistance, Junction to Ambient

15

C/W

RJL

Thermal Resistance, Junction to Lead

2.2

C/W

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Device

Parameter
16AT

VF
trr
IR

CT

Forward Voltage @ 8.0A

Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
TA = 25C
TA = 100C
Total Capacitance
VR = 4.0. f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

16BT

16CT 16DT

16FT

0.95

Units
16GT

16HT

1.3

35

16JT

1.5
50

ns
A
A

10
500
85

60

pF

FEP16AT - FEP16JT, Rev. C

FEP16AT - FEP16JT

20

16

12
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS

25

50
75
100
125
Ambient Temperature [C]

150

175

Figure 1. Forward Current Derating Curve

Peak Forward Surge Current, IFSM [A]

Average Rectified Forward Current, IF [A]

Typical Characteristics
200

160

120

80

40

5
10
20
Number of Cycles at 60Hz

50

100

Figure 2. Non-Repetitive Surge Current

Reverse Characteristics
1000

100
FEP16AT-FEP16DT

10

Reverse Current, IR [mA]

Forward Current, IF [A]

FEP16FT-FEP16JT

0.1
TA = 25 C
Pulse Width = 300
s
2% Duty Cycle

0.01
0.4

0.6

0.8
1
1.2
1.4
Forward Voltage, VF [V]

100
T A = 100 C

10

1
T A = 25 C

0.1

1.6

1.8

Figure 3. Forward Voltage Characteristics

20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]

Figure 4. Reverse Current vs Reverse Voltage

Total Capacitance, CT [pF]

100
90
80
70
FEP16AT-FEP16DT

60
50 FEP16FT-FEP16JT
40

5
10
20
Reverse Voltage, VR [V]

50

100

Figure 5. Total Capacitance

50
NONINDUCTIVE

50
NONINDUCTIVE

+0.5A

trr

(-)
DUT

50V
(approx)
50
NONINDUCTIVE

Pulse
Generator
(Note 2)

0
-0.25A

(+)
OSCILLOSCOPE
(Note 1)

-1.0A
1.0cm

SET TIME BASE FOR

5/ 10 ns/ cm

Reverse Recovery Time Characterstic and Test Circuit Diagram

2001 Fairchild Semiconductor Corporation

FEP16AT - FEP16JT, Rev. C