In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting

channel between the source and drain contactsvia the field effect. The term "enhancement mode"
refers to the increase of conductivity with increase in oxide field that adds carriers to the channel,
also referred to as the inversion layer. The channel can contain electrons (called an nMOSFET or
nMOS), or holes (called a pMOSFET or pMOS), opposite in type to the substrate, so nMOS is made
with a p-type substrate, and pMOS with an n-type substrate (see article on semiconductor devices).
In the less common depletion mode MOSFET, detailed later on, the channel consists of carriers in a
surface impurity layer of opposite type to the substrate, and conductivity is decreased by application
of a field that depletes carriers from this surface layer.[2]

When a voltage is applied across a MOS structure, it modifies the distribution of charges in the
semiconductor. If we consider a p-type semiconductor (with the density of acceptors, p the density
of holes; p = NA in neutral bulk), a positive voltage, , from gate to body (see figure) creates
a depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor
interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions
(see doping (semiconductor)). If is high enough, a high concentration of negative charge carriers
forms in an inversion layer located in a thin layer next to the interface between the semiconductor
and the insulator. Unlike the MOSFET, where the inversion layer electrons are supplied rapidly from
the source/drain electrodes, in the MOS capacitor they are produced much more slowly by thermal
generation through carrier generation and recombination centers in the depletion region.
Conventionally, the gate voltage at which the volume density of electrons in the inversion layer is the
same as the volume density of holes in the body is called the threshold voltage. When the voltage
between transistor gate and source (VGS) exceeds the threshold voltage (Vth), it is known asoverdrive
voltage.
This structure with p-type body is the basis of the n-type MOSFET, which requires the addition of an
n-type source and drain regions.

MOSFET and Its Applications

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a
semiconductor device which is widely used for switching and amplifying electronic
signals in the electronic devices.The MOSFET is a three terminal device such as
source, gate, and drain. The MOSFET is very far the most common transistor and can
be used in both analog and digital ckt.

The MOSFET works by varying the width of a channel along which charge carriers flow
(holes and electrons). The charge carriers enter the channel from the source and exits
through the drain. The channel width is controlled by the voltage on an electrode is
called gate which is located between the source and drain. It is insulated from the
channel near an extremely thin layer of metal oxide. There is a different type of
MOSFET applications which is used as per the requirement.

Types of MOSFET Applications and Working Operation

MOSFET
The MOSFET is an important element in embedded systemdesign which is used to
control the loads as per the requirement. Many of electronic projects developed using
MOSFET such as light intensity control, motor control and max generator applications.
The MOSFET is a high voltage controlling device provides some key features for circuit
designers in terms of their overall performance. This article provides information about
different types of MOSFET applications.
MOSFET and Its Applications

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a

semiconductor device which is widely used for switching and amplifying electronic
signals in the electronic devices.The MOSFET is a three terminal device such as
source, gate, and drain. The MOSFET is very far the most common transistor and can
be used in both analog and digital ckt.

The MOSFET works by varying the width of a channel along which charge carriers flow
(holes and electrons). The charge carriers enter the channel from the source and exits
through the drain. The channel width is controlled by the voltage on an electrode is
called gate which is located between the source and drain. It is insulated from the
channel near an extremely thin layer of metal oxide. There is a different type of
MOSFET applications which is used as per the requirement.
Types of MOSFET Devices

The MOSFET is classified into two types such as;

Depletion mode MOSFET

Enhancement mode MOSFET

Depletion Mode: When there is zero voltage on the gate terminal, the channel shows
its maximum conductance. As the voltage on the gate is negative or positive, then
decreases the channel conductivity.

Depletion Mode MOSFET

Enhancement Mode

When there is no voltage on the gate terminal the device does not conduct. More
voltage applied on the gate terminal, the device has good conductivity.

MOSFET Working Principle

The working of MOSFET depends upon the metal oxide capacitor (MOS) that is the
main part of the MOSFET. The oxide layer presents among the source and drain
terminal. It can be set from p-type to n-type by applying positive or negative gate
voltages respectively. When apply the positive gate voltage the holes present under the
oxide layer with a repulsive force and holes are pushed downward through the
substrate. The deflection region populated by the bound negative charges which are
allied with the acceptor atoms.

P- Channel MOSFET

The P-Channel MOSFET consist negative ions so it works with negative voltages.
When we apply the negative voltage to gate, the electrons present under the oxide layer
through pushed downward into the substrate with a repulsive force. The deflection
region populates by the bound positive charges which are allied with the donor atoms.
The negative voltage also attracts holes from p+ source and drain region into the
channel region.
n-channel mosfet
When we apply the positive gate voltage the holes present under the oxide layer
pushed downward into the substrate with a repulsive force. The deflection region is
populated by the bound negative charges which are allied with the acceptor atoms. The
positive voltage also attracts electrons from the n+ source and drain regions into the
channel. Now, if a voltage is applied among the drain and source the current flows freely
between the source and drain and the gate voltage controls the electrons in the
channel. In place of positive voltage if we apply a negative voltage (hole) channel will be
formed under the oxide layer.

Applications of mosfet:

MOSFET Used as a Switch

In this circuit, using enhanced mode, a N-channel MOSFET is being used to switch the
lamp for ON and OFF. The positive voltage is applied at the gate of the MOSFET and
the lamp is ON (VGS =+v) or at the zero voltage level the device turns off (VGS=0).

If

the resistive load of the lamp was to be replaced by an inductive load and connected to
the relay or diode to protect the load. In the above circuit, it is a very simple circuit for
switching a resistive load such as LEDs or lamp. But when using MOSFET to switch
either inductive load or capacitive load protection is required to contain the MOSFET
applications. If we are not giving the protection, then the MOSFET will be damaged. For
the MOSFET to operate as an analog switching device, that needs to be switched
between its cutoff region where VGS =0 and saturation region where VGS =+v.