Field-eect transistor

This article is about the electrical component. For other Source and drain terminal conductors are connected to
things FET could stand for, see Fet (disambiguation) the semiconductor through ohmic contacts. The conducAbbreviations.
tivity of the channel is a function of the potential applied
across the gate and source terminals.
The eld-eect transistor (FET) is a transistor that uses The FETs three terminals are:[3]
an electric eld to control the shape and hence the electrical conductivity of a channel of one type of charge car Source (S), through which the carriers enter the
rier in a semiconductor material. FETs are also known as
channel. Conventionally, current entering the chanunipolar transistors as they involve single-carrier-type
nel at S is designated by IS.
operation. The FET has several forms, but all have high
input impedance. While the conductivity of a non-FET
Drain (D), through which the carriers leave the
transistor is regulated by the input current (the emitter to
channel. Conventionally, current entering the chanbase current) and so has a low input impedance, a FETs
nel at D is designated by ID. Drain-to-source voltage
conductivity is regulated by a voltage applied to a termiis VDS.
nal (the gate) which is insulated from the device. The
applied gate voltage imposes an electric eld into the de Gate (G), the terminal that modulates the channel
vice, which in turn attracts or repels charge carriers to
conductivity. By applying voltage to G, one can conor from the region between a source terminal and a drain
trol ID.
terminal. The density of charge carriers in turn inuences
the conductivity between the source and drain.

3 More about terminals

1

History
Oxide
Source

Main article: History of the transistor

Gate
Drain

The eld-eect transistor was rst patented by Julius

x
Edgar Lilienfeld in 1926 and by Oskar Heil in 1934, but
n+
n+
practical semiconducting devices (the JFET) were develL
p
oped only much later after the transistor eect was observed and explained by the team of William Shockley at
Bell Labs in 1947, immediately after the 20-year patent
Body
period eventually expired. The MOSFET, which largely
superseded the JFET and had a profound eect on digital
electronic development, was invented by Dawon Kahng Cross section of an n-type MOSFET
and Martin Atalla in 1959.[1]
All FETs have source, drain, and gate terminals that correspond roughly to the emitter, collector, and base of
BJTs. Most FETs have a fourth terminal called the body,
2 Basic information
base, bulk, or substrate. This fourth terminal serves to
bias the transistor into operation; it is rare to make nonSee also: Charge carrier Majority and minority carriers trivial use of the body terminal in circuit designs, but its
presence is important when setting up the physical layout
FETs can be majority-charge-carrier devices, in which of an integrated circuit. The size of the gate, length L in
the current is carried predominantly by majority carriers, the diagram, is the distance between source and drain.
or minority-charge-carrier devices, in which the current The width is the extension of the transistor, in the diis mainly due to a ow of minority carriers.[2] The device rection perpendicular to the cross section in the diagram
consists of an active channel through which charge carri- (i.e., into/out of the screen). Typically the width is much
ers, electrons or holes, ow from the source to the drain. larger than the length of the gate. A gate length of 1 m
1

limits the upper frequency to about 5 GHz, 0.2 m to

about 30 GHz.

Legende

unipolare Transistoren

B ... Bulk-Anschluss
D ... Drain
G ... Gate
S ... Source

Sperrschicht-FET
(NIGFET)

MISFET
(IGFET)

p-Kanal

Anreicherungstyp
(enhancement)

p-Kanal

n-Kanal

Verarmungstyp
(depletion)

Anreicherungstyp
(enhancement)

n-Kanal

Verarmungstyp
(depletion)

The names of the terminals refer to their functions. The

gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to ow through or blocks their passage by creating
or eliminating a channel between the source and drain.
Electron-ow from the source terminal towards the drain
terminal is inuenced by an applied voltage. The body
simply refers to the bulk of the semiconductor in which
the gate, source and drain lie. Usually the body terminal
is connected to the highest or lowest voltage within the
circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected
together since the source is often connected to the highest or lowest voltage within the circuit, although there are
several uses of FETs which do not have such a conguration, such as transmission gates and cascode circuits.

FET OPERATION

FET conventional symbol types

(or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the
body and source are connected.) This conductive channel
is the stream through which electrons ow from source
to drain.

4.1.1 n-channel

FET operation

In an n-channel depletion-mode device, a negative gateto-source voltage causes a depletion region to expand in
width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel
from source to drain becomes large, and the FET is eectively turned o like a switch(see right gure, when there
is very small current). This is called pinch-o, and the
voltage at which it occurs is called the pinch-o voltage.
Conversely, a positive gate-to-source voltage increases
the channel size and allows electrons to ow easily (see
right gure, when there is a conduction channel and current is large).

See also: Field eect (semiconductor)

4.1

Eect of gate voltage on current

I DS

I DS

VDS

SAT

Linear region

VGS - VP
Saturation region

VGS0 = 0
VGS1 < VGS0
VGS2 < VGS1

Saturation
region
Channel
o

VGS

VP

Linear
region

VGS3 < VGS2

Channel o

VGS4

<V

Vp

VDS

IV characteristics and output plot of a JFET n-channel transistor.

Simulation result for Right side: formation of inversion

channel (electron density) and Left side: current-gate voltage curve(transfer characateristics) in a n-channel nanowire
MOSFET. Note that the threshold voltage for this device lies
around 0.45 V.

In an n-channel enhancement-mode device, a conductive

channel does not exist naturally within the transistor, and
a positive gate-to-source voltage is necessary to create
one. The positive voltage attracts free-oating electrons
within the body towards the gate, forming a conductive
channel. But rst, enough electrons must be attracted
near the gate to counter the dopant ions added to the body
of the FET; this forms a region with no mobile carriers
called a depletion region, and the voltage at which this
occurs is referred to as the threshold voltage of the FET.
Further gate-to-source voltage increase will attract even
more electrons towards the gate which are able to create
a conductive channel from source to drain; this process is
called inversion.

4.1.2 p-channel

In a p-channel depletion-mode device, a positive voltage from gate to body creates a depletion layer
by forcing the positively charged holes to the gateThe FET controls the ow of electrons (or electron holes) insulator/semiconductor interface, leaving exposed a
from the source to drain by aecting the size and shape of carrier-free region of immobile, negatively charged aca conductive channel created and inuenced by voltage ceptor ions.

4.2

Eect of source/drain voltage on chan- Among the more unusual body materials are amorphous
silicon, polycrystalline silicon or other amorphous seminel

conductors in thin-lm transistors or organic eld-eect

transistors (OFETs) that are based on organic semiconductors; often, OFET gate insulators and electrodes are
made of organic materials, as well. Such FETs are
manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs). In
June 2011, IBM announced that it had successfully used
graphene-based FETs in an integrated circuit.[9][10] These
If drain-to-source voltage is increased, this creates a sigtransistors are capable of about 2.23 GHz cuto frenicant asymmetrical change in the shape of the channel
quency, much higher than standard silicon FETs.[11]
due to a gradient of voltage potential from source to drain.
The shape of the inversion region becomes pinched-o
near the drain end of the channel. If drain-to-source
voltage is increased further, the pinch-o point of the 6 Types of eld-eect transistors
channel begins to move away from the drain towards the
source. The FET is said to be in saturation mode;[6] although some authors refer to it as active mode, for a better analogy with bipolar transistor operating regions.[7][8]
The saturation mode, or the region between ohmic and
saturation, is used when amplication is needed. The inbetween region is sometimes considered to be part of the
ohmic or linear region, even where drain current is not
approximately linear with drain voltage.
For either enhancement- or depletion-mode devices, at
drain-to-source voltages much less than gate-to-source
voltages, changing the gate voltage will alter the channel
resistance, and drain current will be proportional to drain
voltage (referenced to source voltage). In this mode the
FET operates like a variable resistor and the FET is said
to be operating in a linear mode or ohmic mode.[4][5]

Even though the conductive channel formed by gate-tosource voltage no longer connects source to drain during
saturation mode, carriers are not blocked from owing.
Considering again an n-channel enhancement-mode device, a depletion region exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free
to move out of the channel through the depletion region
if attracted to the drain by drain-to-source voltage. The
depletion region is free of carriers and has a resistance
similar to silicon. Any increase of the drain-to-source
voltage will increase the distance from drain to the pincho point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied.
This proportional change causes the drain-to-source current to remain relatively xed, independent of changes
to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a constant-current source
rather than as a resistor, and can eectively be used as
a voltage amplier. In this case, the gate-to-source voltage determines the level of constant current through the
channel.

Composition

FETs can be constructed from various semiconductors,

with silicon being by far the most common. Most FETs
are made by using conventional bulk semiconductor processing techniques, using a single crystal semiconductor
wafer as the active region, or channel.

Depletion-type FETs under typical voltages: JFET, poly-silicon

MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.
Depletion
Electrons
Holes
Metal
Insulator
Top: source, bottom: drain, left: gate, right: bulk. Voltages that
lead to channel formation are not shown.

The channel of a FET is doped to produce either an n-type

semiconductor or a p-type semiconductor. The drain and
source may be doped of opposite type to the channel, in
the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Fieldeect transistors are also distinguished by the method of
insulation between channel and gate. Types of FETs include:

7
The JFET (junction eld-eect transistor) uses a reverse biased pn junction to separate the gate from
the body.
The MOSFET (metaloxidesemiconductor eldeect transistor) utilizes an insulator (typically
SiO2 ) between the gate and the body.
The MNOS (metalnitrideoxidesemiconductor)
transistor utilizes an nitride-oxide layer insulator between the gate and the body.
The DGMOSFET (dual-gate MOSFET) is a FET
with two insulated gates.
The DEPFET is a FET formed in a fully depleted
substrate and acts as a sensor, amplier and memory
node at the same time. It can be used as an image
(photon) sensor.
The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to
provide a very fast recovery (turn-o) of the body
diode.
The HIGFET (heterostructure insulated gate eldeect transistor) is now used mainly in research.[12]
The MODFET (modulation-doped eld-eect transistor) uses a quantum well structure formed by
graded doping of the active region.
The TFET (tunnel eld-eect transistor) is based on
band-to-band tunneling.[13]
The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a
MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200
3000 V drain-to-source voltage range of operation.
Power MOSFETs are still the device of choice for
drain-to-source voltages of 1 to 200 V.
The HEMT (high-electron-mobility transistor), also
called a HFET (heterostructure FET), can be made
using bandgap engineering in a ternary semiconductor such as AlGaAs. The fully depleted wide-bandgap material forms the isolation between gate and
body.
The ISFET (ion-sensitive eld-eect transistor) can
be used to measure ion concentrations in a solution;
when the ion concentration (such as H+ , see pH electrode) changes, the current through the transistor
will change accordingly.
The BioFET (Biologically sensitive eld-eect
transistor) is a class of sensors/biosensors based
on ISFET technology which are utilized to detect charged molecules; when a charged molecule
is present, changes in the electrostatic eld at
the BioFET surface result in a measurable change

ADVANTAGES OF FET

in current through the transistor. These include

EnFETs, ImmunoFETs, GenFETs, DNAFETs,
CPFETs, BeetleFETs, and FETs based on ionchannels/protein binding.[14]
The MESFET (metalsemiconductor eld-eect
transistor) substitutes the pn junction of the JFET
with a Schottky barrier; and is used in GaAs and
other III-V semiconductor materials.
The NOMFET is a nanoparticle organic memory
eld-eect transistor.[15]
The GNRFET (graphene nanoribbon eld-eect
transistor) uses a graphene nanoribbon for its
channel.[16]
The VeSFET (vertical-slit eld-eect transistor) is
a square-shaped junctionless FET with a narrow slit
connecting the source and drain at opposite corners.
Two gates occupy the other corners, and control the
current through the slit.[17][18]
The CNTFET (carbon nanotube eld-eect transistor).
The OFET (organic eld-eect transistor) uses an
organic semiconductor in its channel.
The DNAFET (DNA eld-eect transistor) is a
specialized FET that acts as a biosensor, by using a
gate made of single-strand DNA molecules to detect
matching DNA strands.
The QFET (quantum eld eect transistor) takes
advantage of quantum tunneling to greatly increase
the speed of transistor operation by eliminating the
traditional transistors area of electron conduction.

7 Advantages of FET
One advantage of the FET is its high gate to main current resistance, on the order of 100 M or more, thus
providing a high degree of isolation between control and
ow. Because base current noise will increase with shaping time,[19] a FET typically produces less noise than a
bipolar junction transistor (BJT), and is thus found in
noise sensitive electronics such as tuners and low-noise
ampliers for VHF and satellite receivers. It is relatively
immune to radiation. It exhibits no oset voltage at zero
drain current and hence makes an excellent signal chopper. It typically has better thermal stability than a BJT.[3]
Because they are controlled by gate charge, once the gate
is closed or opened, there is no additional power draw, as
there would be with a bipolar junction transistor or with
non-latching relays in some states. This allows extremely
low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are
reduced compared to other types of switches.

Disadvantages of FET

10 Source-gated transistor

Source-gated transistors are more robust to manufacturIt has a relatively low gainbandwidth product com- ing and environmental issues in large-area electronics
pared to a BJT. The MOSFET has a drawback of being such as display screens, but are slower in operation than
very susceptible to overload voltages, thus requiring spe- FETs.[21]
cial handling during installation.[20] The fragile insulating layer of the MOSFET between the gate and channel
makes it vulnerable to electrostatic damage or changes to
threshold voltage during handling. This is not usually a 11 See also
problem after the device has been installed in a properly
Chemical eld-eect transistor
designed circuit.
FETs often have a very low 'on' resistance and have a high
'o' resistance. However the intermediate resistances are
signicant, and so FETs can dissipate large amounts of
power while switching. Thus eciency can put a premium on switching quickly, but this can cause transients
that can excite stray inductances and generate signicant
voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very
careful layout and can involve trades between switching
speed and power dissipation. There is also a trade-o between voltage rating and 'on' resistance, so high voltage
FETs have a relatively high 'on' resistance and hence conduction losses.

FET amplier
ISFET
MOSFET
Quantum eld eect transistor

12 References
[1] 1960 - Metal Oxide Semiconductor (MOS) Transistor
Demonstrated - The Silicon Engine | Computer History
Museum
[2] Jacob Millman (1985). Electronic devices and circuits.
Singapore: McGraw-Hill International. p. 397. ISBN
0-07-085505-6.

Uses of FET

The most commonly used FET is the MOSFET. The

CMOS (complementary metal oxide semiconductor)
process technology is the basis for modern digital
integrated circuits. This process technology uses an
arrangement where the (usually enhancement-mode)
p-channel MOSFET and n-channel MOSFET are connected in series such that when one is ON, the other is
OFF.
In FETs, electrons can ow in either direction through
the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is
somewhat arbitrary, as the devices are typically (but not
always) built symmetrically from source to drain. This
makes FETs suitable for switching analog signals between
paths (multiplexing). With this concept, one can construct a solid-state mixing board, for example.

[3] Millman (1985). Electronic devices and circuits. Singapore: McGraw-Hill. pp. 384385. ISBN 0-07-0855056.
[4] C Galup-Montoro; Schneider MC (2007). MOSFET modeling for circuit analysis and design. London/Singapore:
World Scientic. p. 83. ISBN 981-256-810-7.
[5] Norbert R Malik (1995). Electronic circuits: analysis, simulation, and design. Englewood Clis, NJ: Prentice Hall.
pp. 315316. ISBN 0-02-374910-5.
[6] RR Spencer; Ghausi MS (2001). Microelectronic circuits.
Upper Saddle River NJ: Pearson Education/Prentice-Hall.
p. 102. ISBN 0-201-36183-3.
[7] A. S. Sedra; K.C. Smith (2004). Microelectronic circuits
(Fifth ed.). New York: Oxford. p. 552. ISBN 0-19514251-9.
[8] PR Gray; PJ Hurst; SH Lewis; RG Meyer (2001). Analysis and design of analog integrated circuits (Fourth ed.).
New York: Wiley. pp. 1.5.2 p. 45. ISBN 0-471-321680.

A common use of the FET is as an amplier. For example, due to its large input resistance and low output resis- [9] IBM creates rst graphene based integrated circuit
tance, it is eective as a buer in common-drain (source
[10] Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D.
follower) conguration.
IGBTs are used in switching internal combustion engine
ignition coils, where fast switching and voltage blocking
capabilities are important.

B.; Sun, Y; Wu, Y; Dimitrakopoulos, C.; Grill, A;

Avouris, P & Jenkins, K. A. (2011). Wafer-Scale
Graphene Integrated Circuit. Science 332: 12941297.
doi:10.1126/science.1204428. PMID 21659599.

13

[11] Flexible graphene transistor sets new records physicsworld.com

[12] HIGFET and method - Motorola
[13] Ionescu, A. M.; Riel, H. (2011). Tunnel eld-eect
transistors as energy-ecient electronic switches. Nature
479 (7373): 329337. doi:10.1038/nature10679. PMID
22094693.
[14] Poghossianb, Arshak (2002). Recent advances in biologically sensitive eld-eect transistors (BioFETs)". Analyst
127: 11371151. doi:10.1039/B204444G.
[15] http://www.sciencedaily.com/releases/2010/01/
100125122101.htm
[16] Sarvari H, et al. (2011). Frequency analysis of
graphene nanoribbon FET by Non-Equilibrium Greens
Function in mode space. Physica E: Low-dimensional
Systems and Nanostructures 43 (8):
15091513.
doi:10.1016/j.physe.2011.04.018.
[17] Vertical Slit Integrated Circuits
[18] https://web.archive.org/20080706162027/http://www.
ece.cmu.edu/~{}cssi/research/manufacturing.html.
Archived from the original on July 6, 2008. Retrieved
March 9, 2011. Missing or empty |title= (help)
[19] http://www-physics.lbl.gov/~{}spieler/physics_198_
notes/PDF/VIII-5-noise.pdf
[20] Allen Mottershead (2004). Electronic devices and circuits.
New Delhi: Prentice-Hall of India. ISBN 81-203-0124-2.
[21] Source-gated transistors for order-of-magnitude performance improvements in thin-lm digital circuits

13

External links

PBS The Field Eect Transistor

Junction Field Eect Transistor
CMOS gate circuitry
Winning the Battle Against Latchup in CMOS Analog Switches
Field Eect Transistors in Theory and Practice
The Field Eect Transistor as a Voltage Controlled
Resistor

EXTERNAL LINKS

14
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