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p. 8.1
Diffusion is
Doping of semiconductors
Oxidation of metals
Mechanisms
Vacancy diffusion
Interstitial diffusion
Diffusion in Solids
p. 8.2
Vacancy
Diffusion in Solids
p. 8.3
number
mass
area time
1 dM
J = A dt
dC
number/volume
or
:
concentration
gradient,
distance
dx
mass/volume
distance
Diffusion in Solids
p. 8.4
t
x
dC
J = D dx
C
C
t = x D x
C
number/volume
or
:
rate
of
accumulation,
time
J
flux in - flux out
:
flux
gradient;
x
distance
Cases
Steady state
mass/volume
time
=
0
Zero accumulation
=
0
Unsteady state
Accumulation or depletion
C
2 C
D D(x) t = D x 2
Diffusion in Solids
p. 8.5
and
2 C
C
D x 2 = t
we find:
2 C
x 2 = 0
i.e., the concentration profile is linear
( only a line has a second derivative equal to zero)
J in
J out
Diffusion in Solids
p. 8.6
General comment:
Many functions
C(x,t)
will satisfy this differential equation.
To correctly describe the concentration profile C(x,t)
that occurs in a particular physical situation,
a function must also satisfy the pertinent
initial condition what prevails at t=0
and boundary conditions that hold at some interface or
boundary in our system.
Diffusion in Solids
p. 8.7
x
0
i.c.: C(x,0) = 0
b.c. #2: C dx = S
holds for all t
4Dt
Diffusion in Solids
p. 8.8
4Dt
C
t1
t 2 = 2t 1
t 3 = 4t 1
Useful exercise:
Diffusion in Solids
p. 8.9
i.c.: C(x,0) = CO
C(x,t) CO
x
= 1 erf
CS CO
2
Dt
erf(z)
1.0
0.5
z
3
0.5
1.0
Diffusion in Solids
p. 8.10
Diffusion in Solids
p. 8.11
FACTORS INFLUENCING D
A diffusing atom needs
1)
2)
b.
Free energy
a.
c.
a.
b.
Distance, x
c.
Diffusion in Solids
p. 8.12
D = DO exp
RT
1
Q
Plot of lnD vs. T will be linear, with slope Rd