TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for generalpurpose amplifier and low frequency
switching applications.
Features

High DC Current Gain

Min hFE = 1000 @ IC

= 5.0 A, VCE = 4 V
CollectorEmitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP140, TIP145
= 80 Vdc (Min) TIP141, TIP146
= 100 Vdc (Min) TIP142, TIP147
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
These are PbFree Devices*

MAXIMUM RATINGS
Rating

Symbol

TIP140
TIP145

TIP141
TIP146

TIP142
TIP147

Unit

Collector Emitter Voltage

VCEO

60

80

100

Vdc

Collector Base Voltage

VCB

60

80

100

Vdc

Emitter Base Voltage

VEB

Collector Current
Continuous
Peak (Note 1)

IC

5.0

Vdc
Adc

10
15

Base Current Continuous

IB

0.5

Adc

Total Power Dissipation

@ TC = 25_C

PD

125

TJ, Tstg

65 to +150

_C

Operating and Storage

Junction Temperature Range

10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS

SOT93 (TO218)
CASE 340D
STYLE 1

TO247
CASE 340L
STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO247
package. Reference FPCN# 16827.

ORDERING INFORMATION

THERMAL CHARACTERISTICS
Characteristic

http://onsemi.com

Symbol

Max

Unit

Thermal Resistance,
JunctiontoCase

RqJC

1.0

C/W

Thermal Resistance,
JunctiontoAmbient

RqJA

35.7

C/W

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 5 ms, v 10% Duty Cycle.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2012

May, 2012 Rev. 6

Publication Order Number:

TIP140/D

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

MARKING DIAGRAMS
TO247
TO218

TIP14x
AYWWG

AYWWG
TIP14x

1 BASE

1 BASE

3 EMITTER

2 COLLECTOR

2 COLLECTOR
TIP14x
A
Y
WW
G

3 EMITTER

=
=
=
=
=

Device Code
Assembly Location
Year
Work Week
PbFree Package

DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142

PNP
TIP145
TIP146
TIP147

COLLECTOR

BASE

COLLECTOR

BASE

8.0 k

40

8.0 k

EMITTER

40

EMITTER

ORDERING INFORMATION
Package

Shipping

TIP140G

Device

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP141G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP142G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP145G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP146G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP147G

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP140G

TO247
(PbFree)

30 Units / Rail

TIP141G

TO247
(PbFree)

30 Units / Rail

TIP142G

TO247
(PbFree)

30 Units / Rail

TIP145G

TO247
(PbFree)

30 Units / Rail

TIP146G

TO247
(PbFree)

30 Units / Rail

TIP147G

TO247
(PbFree)

30 Units / Rail

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2

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

60
80
100

2.0
2.0
2.0

1.0
1.0
1.0

20

1000
500

2.0
3.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0)

VCEO(sus)

TIP140, TIP145
TIP141, TIP146
TIP142, TIP147

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)

TIP140, TIP145
TIP141, TIP146
TIP142, TIP147

Collector Cutoff Current

(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)

TIP140, TIP145
TIP141, TIP146
TIP142, TIP147

Vdc

ICEO

mA

ICBO

Emitter Cutoff Current (VBE = 5.0 V)

mA

IEBO

mA

ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)

hFE

CollectorEmitter Saturation Voltage

(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)

VCE(sat)

Vdc

BaseEmitter Saturation Voltage

(IC = 10 A, IB = 40 mA)

VBE(sat)

3.5

Vdc

BaseEmitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)

VBE(on)

3.0

Vdc

td

0.15

ms

tr

0.55

ms

ts

2.5

ms

tf

2.5

ms

SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
Rise Time

Storage Time

(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)

Fall Time

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

10
VCC
-30 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA

RC

ts
SCOPE

t, TIME (s)

TUT

V2
approx
+12 V

RB

51

0
V1
appox.
-8.0 V

D1

8.0 k

PNP
NPN

5.0

40

2.0
tf
1.0
tr

0.5

+4.0 V
25 ms

tr, tf 10 ns
DUTY CYCLE = 1.0%

td @ VBE(off) = 0
0.2

for td and tr, D1 is disconnected

and V2 = 0

0.1
0.2

For NPN test circuit reverse diode and voltage polarities.

Figure 1. Switching Times Test Circuit

0.5

1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times

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3

VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25C
10

20

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142

PNP
TIP145, TIP146, TIP147
20,000
TJ = 150C

TJ = 150C
100C
25C

2000

-55C
1000

500

100C

10,000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

5000

7000

25C

5000
-55C

3000
2000

VCE = 4.0 V

300
0.5

VCE = 4.0 V

1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)

7.0

1000
0.5

10

0.7

1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)

7.0

10

VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)

VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)

Figure 3. DC Current Gain versus Collector Current

5.0

3.0
2.0

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
-75

-50

-25

0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (C)

150

175

5.0

3.0
2.0

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA

0.7
0.5
-75 -50

-25

0
25 50
75 100 125
TJ, JUNCTION TEMPERATURE (C)

150

175

4.0
3.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 4. CollectorEmitter Saturation Voltage

VCE = 4.0 V

3.2
2.8
2.4
IC = 10 A

2.0
1.6

5.0 A

1.2
0.8
-75

1.0 A
-25

25

75

125

4.0
3.6
3.2
2.8
2.4
IC = 10 A
2.0
1.6

5.0 A

1.2
0.8
-75

175

VCE = 4.0 V

1.0 A
-25

25

75

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 5. BaseEmitter Voltage

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4

125

175

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMP) (mA)

20
10
7.0
5.0
3.0
2.0

dc
TJ = 150C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25C

1.0

TIP140, 145
TIP141, 146
TIP142, 147
30
50
20
15
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.2
10

15
10
7.0
5.0
100 mJ

2.0

1.0
0.5 1.0
2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)

100

Figure 6. ActiveRegion Safe Operating Area

Figure 7. Unclamped Inductive Load

VCE MONITOR

INPUT
VOLTAGE
COLLECTOR
CURRENT

MPS-U52
100 mH

RBB1
INPUT

50

TUT

1.5k
50

VCC = 20 V
IC
MONITOR

RBB2
= 100
VBB2 = 0
VBB1 = 10 V

50

RS = 0.1

w 7.0 ms (SEE NOTE 1)

5.0 V
0
100 ms
0

1.42 A
VCE(sat)
-20 V
COLLECTOR
VOLTAGE
V(BR)CER

TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.

VOLTAGE AND CURRENT WAVEFORMS

Figure 8. Inductive Load

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5

100

hfe , SMALL-SIGNAL FORWARD CURRENT

TRANSFER RATIO

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

100
70
50

VCE = 10 V
IC = 1.0 A
TJ = 25C
PNP
PNP
NPN

20
10
7.0
5.0

NPN

2.0
1.0
1.0

2.0

3.0
5.0
f, FREQUENCY (MHz)

7.0

10

Figure 9. Magnitude of Common Emitter

SmallSignal ShortCircuit Forward
Current Transfer Ratio

PD, POWER DISSIPATION (WATTS)

5.0

4.0

3.0

2.0

1.0
0
0

40

80
120
160
TA, FREE-AIR TEMPERATURE (C)

200

Figure 10. FreeAir Temperature Power Derating

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6

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

C
Q

DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

J
H

MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

STYLE 1:
PIN 1.
2.
3.
4.

V
G

INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

BASE
COLLECTOR
EMITTER
COLLECTOR

TO247
CASE 340L02
ISSUE F
T

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

E
U

L
4

Q
1

0.63 (0.025)

P
Y
K

F 2 PL

D 3 PL
0.25 (0.010)

Y Q

T B

STYLE 3:
PIN 1.
2.
3.
4.

DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W

http://onsemi.com
7

MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
BASE
COLLECTOR
EMITTER
COLLECTOR

INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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TIP140/D