Professional Documents
Culture Documents
TOSHIBA Transistor
2SD2525
Audio Frequency Power Amplifier Applications
Unit: mm
Complementary to 2SB1640
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
60
Emitter-base voltage
VEBO
DC
IC
Pulse
ICP
Base current
IB
0.5
PC
1.8
Junction temperature
Tj
150
JEDEC
Tstg
55 to 150
JEITA
Collector current
TOSHIBA
2-10T1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.5 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
2006-11-21
2SD2525
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 60 V, IE = 0
10
IEBO
VEB = 7 V, IC = 0
10
V (BR) CEO
IC = 50 mA, IB = 0
60
hFE (1)
VCE = 5 V, IC = 0.5 A
100
320
hFE (2)
VCE = 5 V, IC = 2 A
20
VCE (sat)
IC = 2 A, IB = 0.2 A
0.4
1.0
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
0.75
1.0
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
MHz
VCB = 10 V, IE = 0, f = 1 MHz
35
pF
Cob
Marking
D2525
2006-11-21
2SD2525
IC VCE
hFE IC
1000
80
70
100
90
60
Collector current IC
(A)
2.5
Common emitter
3.0
50
40
2.0
30
1.5
20
IB = 10 mA
1.0
500 Ta = 100C
25
300
VCE = 5 V
25
100
50
30
0.5
10
0.01
Common emitter
Ta = 25C
0
0
Collector-emitter voltage
0.03 0.05
0.1
0.3
0.5
Collector current IC
(A)
VCE (V)
VCE (sat) IC
IC VBE
3.0
Common emitter
IC/IB = 10
0.5
Ta = 100C
0.3
25
25
0.1
VCE = 5 V
(A)
2.5
Collector current IC
Common emitter
1
0.05
0.03
2.0
1.5
Ta = 100C
1.0
25
25
0.5
0.01
0.01
0.03 0.05
0.1
0.3 0.5
Collector current IC
(A)
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage
1.0
1.2
1.4
VBE (V)
2006-11-21
2SD2525
rth tw
Transient thermal resistance rth (C/W)
300
100
30
10
0.3
0.001
0.01
0.1
Pulse width
10
tw
100
1000
(s)
PC Ta
10
IC max (pulsed)*
1 ms*
IC max (continuous)
DC operation
Ta = 25C
100 ms*
Collector current IC
(A)
(W)
2.0
10 ms*
0.5
0.3
0.1
0.05
0.03
0.01
0.1
*: Single nonrepetitive
pulse Ta = 25C
Curves must be derated
linearly with increase in
temperature.
1
1.2
0.8
0.4
0
0
VCEO max
10
1.6
25
50
75
100
125
150
175
100
2006-11-21
2SD2525
20070701-EN
2006-11-21