Disseny D'una Font D'alimentació, Un Sensor de Temperatura I Un Sensor de Nivell

Projecte
Disseny duna font dalimentaci, un sensor

de temperatura i un sensor de nivell.
Escola Tcnica Superior dEnginyeria Qumica
Grau en Enginyeria Qumica
Electrnica
Alumnes:
Josep Brunet Sol
Joan Ferrer Fernndez
Professors:
Xavier Munt Puig
Joaquin Cruz Prez
Tarragona, 29 de desembre del 2014
NDEX
1.
Introducci ....................................................................................................................2
2.
Memria descriptiva .....................................................................................................2
3.
4.
2.1.
Sensor de temperatura .........................................................................................2
2.2.
Sensor de nivell ...................................................................................................3
2.3.
Font dalimentaci ..............................................................................................4
Memria de clcul.........................................................................................................4
3.1.
3.2.
Sensor de nivell ...................................................................................................6
3.3.
Font dalimentaci ..............................................................................................8
Plnols ...........................................................................................................................9
4.1.
4.2.
Sensor de nivell ...................................................................................................9
4.3.
Font dalimentaci ............................................................................................10
5.
Plec de condicions.......................................................................................................11
6.
Pressupost ...................................................................................................................11
7.
Annexes.......................................................................................................................12
Disseny duna font dalimentaci, un sensor de temperatura i de nivell
2/12/L
1. INTRODUCCI
El propsit daquest projecte s utilitzar els coneixements desenvolupats al llarg del
quadrimestre. Lobjectiu en el qual es basa s en dissenyar primer de tot un sensor de
temperatura i un sensor de nivell i finalment una font dalimentaci per aquests dos circuits.
El projecte s molt til pels estudiants del Grau dEnginyeria Qumica, ja que gracies a
aquest treball es veu una petita part per molt important de laplicaci de lelectrnica
relacionada amb una de les assignatures ms important del curs com s Control i
Instrumentaci, on sn bsics tot tipus de sensors i mesuradors pel control de una planta de
qumica.
Lestructura del projecte es veu de manera explicada en el segent esquema:
Projecte
Sensors de Temperatura
Sensors de Nivell
Per sota
de 40C
Per sobre
de 40C
Per sobre
de 50C
Nivell
alt
Nivell
mitja
Nivell
baix
Verd
Taronja
Vermell
Verd
Taronja
Vermell
Font
dAlimentaci
En aquest projecte sha intentat buscar la millor soluci pel funcionament dels circuits,
aix com el producte ms econmic per les nostres necessitats.
2. MEMRIA DESCRIPTIVA
Els sensors sn dispositius que detecten magnituds tan fsiques com qumiques i que les
transformen en magnituds elctriques.
2.1. Sensor de temperatura
Un sensor de temperatura s un dispositiu capa dinterpretar senyals de canvi de
temperatura i transformar aquesta informaci en senyals elctriques les qual sn enviades a
un altre dispositiu per a poder ser interpretades.
El sensor de temperatura a dissenyar ha dindicar tres alarmes amb Dodes LED de
diferents colors: verd per sota de 40C, taronja per sobre de 40C i vermell per sobre de
50C. Els concepte dels colors s semblant al de un semfor, si est en color verd significa
que el funcionament de la variable a controlar s correcte, si sapaga el verd i sengega el
taronja significa que funciona correctament per que hi ha un excs de temperatura i si
sengega el vermell encara hi ha ms excs de temperatura i el seu funcionament s
incorrecte.
Sha utilitzat un transductor de temperatura AD592 de la casa Analog Devices de precisi
mpliament utilitzat en la industria que t una connexi de dos terminals i la caracterstica de
Projecte dElectrnica. Curs 2014-2015
3/12/L
generar una corrent proporcional de 1 A/K. El rang de treball del transductor s idoni entre
-25C i 125C, ms que suficient pel sensor de temperatura que sha dissenyat. La corrent
que genera el transductor es converteix en voltatge a travs de la R1, la qual s una
resistncia de precisi de 10 K i que genera 10 mV/K. Aix a 0C hi haur una tensi de
2.73 V en el punt duni entre la resistncia i el transductor de temperatura.
El nivell de tensi es compara amb unes tensions fixes que corresponen als 40C i als
50C. Aquestes comparacions tenen lloc en un comparador electrnic. Per realitzar les
comparacions sha fet servir el circuit integrat LM339-N del fabricant Texas Instruments.
Aquest circuit te lavantatge dintegrar fins a quatre comparadors en un sol circuit, a ms de
presentar una alta impedncia dentrada i ser capa de conduir una corrent important de
sortida, que el fa que sigui mpliament utilitzat a ms de ser fcil dadquirir. El motiu
dutilitzar aquest component s perqu laltre impedncia dentrada fa que la corrent que
circula per ell sigui menyspreables davant la corrent de les resistncies per la qual cosa es
facilita enormement el clcul dels components. A ms la capacitat de conduir directament la
corrent necessria pels LEDs evita tenir dinstallar components addicionals.
El funcionament del comparador s que si la tensi existent en lentrada del positiu (+) s
ms gran que la de lentrada del negatiu (-), la sortida s dalta impedncia i per tant no
condueix. Si la tensi en la entrada del positiu (+) s ms petita que la de lentrada del
negatiu (-), la impedncia de sortida s baixa i per tant condueix cap al negatiu de la font
dalimentaci, fent que sencengui el color del LED. En el present projecte es fan servir
aquests components per comparar que la tensi de referencia s menor a 3.13 V (inferior a
40C) pel LED verd, que s major a 3.13 V (superior a 40C) pel LED taronja i que s major
a 3.23 pel LED vermell. Es pot observar que sempre que el vermell estigui encs el taronja
tamb ho estar.
2.2. Sensor de nivell
El sensor de nivell converteix una mesura fsica de nivell, normalment de lquids, a una
senyal elctrica proporcional. El principi daquesta conversi s de moltes maneres: pressi
diferencial, rebot dultrasons, radioactiu, palpador o mesura de conductivitat elctrica.
El controladors de nivell tenen una gran utilitat en les industries, especialment en les
fabriques que es basen en el comer de productes envasats, ja que es necessita controlar el
nivell del producte en cada envs. En la industria qumica tamb s molt til per tal de saber
la quantitat dun lquid emmagatzemada en un tanc.
Per fer el disseny del sensor de nivell sinstallar en el dipsit en el qual es vol mesurar
el nivell els elctrodes que estan formats per dues varillas dacer inoxidable que cobreixen
verticalment el recorregut del nivell del dipsit. Aquestes varillas estaran prximes a fi
daconseguir valors de conductivitat relativament alts. Els requeriments per a que funcioni
aquest tipus de mesura s que el lquid presenti una conductivitat acceptable en el rang de
treball, s a dir no seria vlid per lquids allants com sn la majoria de hidrocarburs
(gasolina, oli, etc). Per altre banda es requereix que la temperatura no vari molt ja que la
conductivitat especifica canvia amb la temperatura.
Lelement primari indicat en lesquema actua com una resistncia variable que depn del
nivell del lquid. Si no hi ha lquid la resistncia s infinita i la tensi mxima. Per a que la
variaci de la tensi amb la resistncia sigui lineal s necessari que la corrent que passa a
4/12/L
traves de la resistncia sigui fixa. Per aquest motiu sha construt una font dintensitat
ajustada a 5 mA.
La font dintensitat est formada per un Transistor NPN amb una resistncia demissor
ajustada a una caiguda de 0.7 V, entre base-emissor hi ha dos dodes polaritzats en mode
directe i el D4 compensa la polaritzaci base-emissor i el D5 ajusta la corrent que cau en la
resistncia.
Sutilitza el mateix comparador que en el sensor de temperatura, el circuit integrat
LM339-N del fabricant Texas Instruments i els mateixos Dodes LED de color.
Els nivells de canvi de color de sha considerat que quan est per sota de 1 V en el sensor
de nivell, significa que est en el nivell alt (color verd), quan est per sobre de 3 V, significa
que est en el nivell baix (color vermell) i entre 1 V i 3 V est en el nivell mig (color
taronja). El significat dels colors s semblant al utilitzat en el sensor de temperatura
dissenyat en lapartat anterior. En aquest cas quan tenim el color vermell, el taronja est
apagat, cosa que no passava en el sensor de temperatura.
2.3. Font dalimentaci
Una font dalimentaci s un dispositiu que converteix corrent alterna en corrent continua
i lestabilitza per a tenir un subministrament constant sense fer servir bateries o piles. Poden
ser fonts dalimentaci lineals o commutades. Actualment les commutades sn les ms
habituals ja que el seu rendiment s molt alt, per sn bastant complexes.
La font dalimentaci dissenyada per administrar una tensi de 12 V al circuit del sensor
de temperatura i al circuit del sensor de nivell s lineal.
La font dalimentaci salimenta amb una corrent alterna de 220 V i amb un
transformador (TI1) es baixa la tensi a 15 V (superior a la que es voldr estabilitzar). Tot
seguit la corrent alterna es rectifica amb un pont de dodes i es filtra amb un condensador
electroltic (C1) i un condensador cermic (C2).
Una vegada filtrada la corrent continua passa al circuit estabilitzador format per un
Darlington de dos transistors i un dode Zener de 12 V. La tensi de sortida de la font ser la
tensi del Zener menys la tensi de conducci de les dues unions base-emissor de cada
transistor.
3. MEMRIA DE CLCUL
Utilitzant una resistncia (R1) de 10 K i tal com indica el manual adjunt del AD592, el
transductor de temperatura genera 1 A/K, es calcula les tensions a les temperatures
dinters:
A 40C:
A 50C:
5/12/L
, seran tils per configurar el comparador.
A continuaci es calcula les resistncies del divisor de tensi que defineixen els dos punts
dalarma per aconseguir els nivells de tensi desitjats, considerant que circula una corrent de
1 mA i que la font de tensi s de 12 V:
La tensi a 50C ha de ser:
La tensi a 40C ha de ser:
Clcul de R3:
Clcul de R2:
Mitjanant una cerca dobjectiu amb lExcel:
Clcul de R4:
6/12/L
Tot seguit es calculen les resistncies entre els comparadors i els Dodes LED, sabent que
la sortida del comparador s un transistor i tenen una corrent de saturaci de 0.2 V i que els
LEDs tenen 1.3 V:
Les tres resistncies R5, R6 i R7 sn iguals, aix que nicament es posa lexemple
del clcul de R5:
Saproxima a 1 K, perqu s la resistncia que trobarem en el mercat.

Primer de tot es fan els clculs per obtenir una font dintensitat de 5 mA:
Considerant que el voltatge base-emisor sn 0.7 V i els dos dodes en la zona activa
tamb s de 0.7 V cadascun i que Beta s 100:
Clcul de R1:
7/12/L
Clcul de R2:
A continuaci es calculen les resistncies del divisor de tensi, on sha fixat que entre R4
i R5 hi ha dhaver 3 V i entre R3 i R4 1 V, si lElement Primari marca per sobre de 3 V,
voldr dir que estem al nivell alt, si marca per sota de 1 V voldr dir que estem al nivell baix:
Considerant que es vol fer circular una corrent de 1 mA, la suma de totes les resistncies
ha de donar 12 K:
Clcul de Rtotal:
La tensi a entre R3 i R4 ha de ser:
La tensi entre R4 i R5 ha de ser:
Clcul de R4:
8/12/L
Clcul de R5:

Cada circuit consumeix menys de 200 mA, per tant la font la dissenyarem per a 500 mA
que ser ms que suficient.
Cal calcular la tensi de pic per dimensionar la tensi del dode electroltic C1:
El T1 s un transistor 2N3055 amb una Beta1 de 40 i el T2 s un transistor BD135 amb

una Beta2 de 100 i formen un Darlington amb la segent Beta:
Per una corrent mxima del circut de 500 mA, la corrent de base del transistor ser:
Per tant sumant-li la corrent de polaritzaci del Zener una intensitat de 1 mA a traves de
la resistncia R1 s suficient.
9/12/L
4. PLNOLS
Tot seguit es mostra el sensor de temperatura dissenyat on el valor de la corrent s del
transductor de temperatura s de 313 A, es a dir estem considerant que en aquest moment
est a 40C:

A la segent pgina es mostra el sensor de nivell dissenyat:
10/12/L

A continuaci es mostra la font dalimentaci dissenyada pel sensor de temperatura i pel
sensor de nivell:
11/12/L
5. PLEC DE CONDICIONS
Es suposa una alimentaci de 12 V en el circuit de sensor de temperatura i en el

circuit de sensor de nivell.
La temperatura mxima a la que poden ser operar els circuits s de 80 C, ja que
per sobre daquesta poden haver riscos en els components elctrics.
Sutilitza el simulador Psim, el qual la demo de la versi 9.1 est disponible en el
moodle de lassignatura dElectrnica.
En el clcul del pressupost es t en compte el cost dels materials per no el cost de
la m dobra.
La font dalimentaci t incorporat un fusible.
6. PRESSUPOST
Sha buscat els preus i les referencies del components en el catleg general de RS,
http://es.rs-online.com/web/.
El pressupost pel sensor de temperatura s el segent:
Identificaci Descripci
AD
R1
R2
R3
R4
R5, R6 y R7
IC1
D1
D2
D3
Sensor de Temperatura Analog Devices

Resistencia Precisin 10 K 0.1%
Resistencia Precisin 8K66 0.1%
Resistencia Precisin 100 0.1%
Resistencias 1K 5% 0.5 W
Circuito interado 4 comparadores
LM339
Diodo LED 5 mm color Verde
Diodo LED 5 mm color Naranja
Diodo LED 5 mm color Rojo
Placa de Montaje
Referencia
RS
230-882
166-728
166-661
164-801
165-270
132-494
Quantitat
1
1
1
1
1
3
Preu
Total
Unit () ()
13.60
13.60
0.98
0.98
0.98
0.98
0.98
0.98
0.98
0.98
0.04
0.12
714-7367
0.23
0.23
228-5944
228-5928
228-5922
433-896
1
1
1
1
0.21
0.25
0.18
7.29
Total
0.21
0.25
0.18
7.29
25.80
El pressupost pel sensor de nivell s el segent:

R1
R2
R3
R4
R5
R6
R7
Tubing de Inox para electrodos

Resistencia Precisin 140 0.1%
Resistencias 4K7 5%
Resistencia Precisin 1K 0.1%
Resistencia Precisin 2K 0.1%
Resistencias 1K 5%
Resistencias 10K 5%
Referencia
RS
164-946
135-904
165-769
166.-059
166-683
135-910
135-847
Quantitat
2
1
1
1
1
1
1
1
Preu
Total
Unit () ()
2.00
4.00
0.98
0.98
0.05
0.05
0.98
0.98
0.98
0.98
0.98
0.98
0.05
0.05
0.05
0.05

R8, R9, R10
D4, D5, D6,
D7
T1
IC1
D1
D2
D3
12/12/L
132-494
0.04
0.12
Diodo de Seal !N4148
436-7557
0.03
0.12
Transistor de Seal 2N2907

Circuito interado 4 comparadores
LM339
Diodo LED 5 mm color Verde
Diodo LED 5 mm color Naranja
Diodo LED 5 mm color Rojo
Placa de Montaje
445-2955
0.24
0.24
714-7367
0.23
0.23
228-5944
228-5928
228-5922
433-.896
1
1
1
1
0.21
0.25
0.18
7.29
Total
0.21
0.25
0.18
7.29
16.71
El pressupost per la font dalimentaci s el segent:
Portafusibles 5x20 mm
Fusible 5x20 100 mA
Transformador 7.5 VA 220/15
Condensador electroltico 1000 uF 35 V
Condensador cermico 100 nF
Condensador electroltico 100 uF 16 V
Referencia
RS
336-7851
100-0001
201-8564
149-818
228-6818
169-1815
228-6650
Diodo rectificador 1 A 1N4007
700-3665
0.10
0.40
Diodo Zener 13 V BZX85C13

Transistor Potencia 2N3055
Transistor BD137
Placa de Montaje
759-8841
545-2210
348-9547
433-.896
1
1
1
1
0.05
1.94
0.30
7.29
Total
0.05
1.94
0.30
7.29
25.62
F1
FA1
TR1
R1
C1
C2, C4
C3
D1, D2, D3,
D4
D5
T1
T2
Quantitat
1
1
1
1
1
2
1
Preu
Total
Unit () ()
0.85
0.85
0.29
0.29
12.84
12.84
0.04
0.04
0.63
0.63
0.44
0.88
0.10
0.10
El cost total dels materials pel projecte s de 68 .
7. ANNEXES
En les segents pgines sadjunten els fulls de caracterstiques dels elements utilitzats.
AD592SPECIFICATIONS (typical @ T = +258C, V = +5 V, unless otherwise noted)

A
Model
Min
ACCURACY
Calibration Error @ +25C1
TA = 0C to +70C
Error over Temperature
Nonlinearity2
TA = 25C to +105C
Error over Temperature3
Nonlinearity2
OUTPUT CHARACTERISTICS
Nominal Current Output
@ +25C (298.2K)
Temperature Coefficient
Repeatability4
Long Term Stability5
AD592AN
Typ Max
Min
AD592BN
Typ Max
2.5
0.7
1.0
0.3
0.5
1.8
0.15
3.0
0.35
0.8
0.1
1.5
0.25
0.4
0.05
0.8
0.15
C
C
2.0
0.25
3.5
0.5
0.9
0.2
2.0
0.4
0.5
0.1
1.0
0.35
C
C
0.1
0.1
A
A/C
C
C/month
+105
+125
44
20
C
C
V
V
300
30
0.5
0.2
0.1
C/V
C/V
C/V
298.2
1
0.1
0.1
POWER SUPPLY
Operating Voltage Range
Power Supply Rejection
+4 V < VS < +5 V
+5 V < VS < +15 V
+15 V < VS < +30 V
Units
1.5
298.2
1
ABSOLUTE MAXIMUM RATINGS

Operating Temperature
Package Temperature6
Forward Voltage (+ to )
Reverse Voltage ( to +)
Lead Temperature
(Soldering 10 sec)
AD592CN
Min Typ Max
25
45
0.1
0.1
+105
+125
44
20
25
45
+105
+125
44
20
300
4
298.2
1
25
45
300
30
30
0.5
0.2
0.1
0.5
0.2
0.1
NOTES
1
An external calibration trim can be used to zero the error @ +25C.
2
Defined as the maximum deviation from a mathematically best fit line.
3
Parameter tested on all production units at +105C only. C grade at 25C also.
4
Maximum deviation between +25C readings after a temperature cycle between 45C and +125C. Errors of this type are noncumulative.
5
Operation @ +125C, error over time is noncumulative.
6
Although performance is not specified beyond the operating temperature range, temperature excursions within the package temperature range will not damage the device.
Specifications subject to change without notice.
Specifications shown in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min
and max specifications are guaranteed, although only those shown in boldface are tested on all production units.
METALIZATION DIAGRAM
TEMPERATURE SCALE CONVERSION EQUATIONS
66MILS
V+
42MILS
V
8C = 5 (8F 32)
K = C +273.15
8F = 9 8C +32
R = F +459.7
ORDERING GUIDE
Model
Max Cal
Error @ +258C
Max Error
258C to +1058C
Max Nonlinearity
258C to +1058C
Package
Option
AD592CN
AD592BN
AD592AN
0.5C
1.0C
2.5C
1.0C
2.0C
3.5C
0.35C
0.4C
0.5C
TO-92
TO-92
TO-92
REV. A
Typical Performance CurvesAD592

+2.0
+2.0
+1.5
+1.5
+1.0
+1.0
TOTAL ERROR oC
TOTAL ERROR oC
Typical @ VS = +5 V
+0.5
0
0.5
+0.5
0
0.5
1.0
1.0
1.5
1.5
2.0
25
+25
+70
2.0
+105
25
+25
+70
+105
TEMPERATURE oC
TEMPERATURE oC
AD592CN Accuracy Over Temperature
AD592BN Accuracy Over Temperature
+2.0
0.75
+1.5
0.50
TOTAL ERROR oC
TOTAL ERROR oC
+1.0
+0.5
0
0.5
0.25
0.25
1.0
0.50
1.5
2.0
25
+25
+70
0.75
+105
500
TEMPERATURE oC
0.75
TOTAL ERROR oC
0.50
0.25
0.25
0.50
0.75
500
1000
1500
TIME Hours
Long-Term Stability @ +125C
REV. A
1500
2000
Long-Term Stability @ +85 C and 85% Relative Humidity
AD592AN Accuracy Over Temperature
1000
TIME Hours
2000
AD592
resistor. Note that the maximum error at room temperature,
over the commercial IC temperature range, or an extended
range including the boiling point of water, can be directly read
from the specifications table. All three error limits are a combination of initial error, scale factor variation and nonlinearity deviation from the ideal 1 A/K output. Figure 2 graphically
depicts the guaranteed limits of accuracy for an AD592CN.
THEORY OF OPERATION
The AD592 uses a fundamental property of silicon transistors

to realize its temperature proportional output. If two identical
transistors are operated at a constant ratio of collector current
densities, r, then the difference in base-emitter voltages will be
(kT/q)(ln r). Since both k, Boltzmans constant and q, the
charge of an electron are constant, the resulting voltage is
directly Proportional To Absolute Temperature (PTAT). In the
AD592 this difference voltage is converted to a PTAT current
by low temperature coefficient thin film resistors. This PTAT
current is then used to force the total output current to be proportional to degrees Kelvin. The result is a current source with
an output equal to a scale factor times the temperature (K) of
the sensor. A typical V-I plot of the circuit at +25C and the
temperature extremes is shown in Figure 1.
+1.0
MAXIMUM ERROR
OVER TEMPERATURE
TOTAL ERROR oC
+0.5
TYPICAL ERROR
0
CALIBRATION
ERROR LIMIT
0.5
MAXIMUM ERROR
OVER TEMPERATURE
1.0
+105oC
IOUT A
378
25
+25oC
298
+25
+70
+105
TEMPERATURE oC
25oC
248
Figure 2. Error Specifications (AD592CN)
UP TO
30V
2
3
4
SUPPLY VOLTAGE Volts
The AD592 has a highly linear output in comparison to older

technology sensors (i.e., thermistors, RTDs and thermocouples), thus a nonlinearity error specification is separated
from the absolute accuracy given over temperature. As a maximum deviation from a best-fit straight line this specification represents the only error which cannot be trimmed out. Figure 3 is
a plot of typical AD592CN nonlinearity over the full rated temperature range.
Figure 1. V-I Characteristics
Factory trimming of the scale factor to 1 A/K is accomplished

at the wafer level by adjusting the AD592s temperature reading
so it corresponds to the actual temperature. During laser trimming the IC is at a temperature within a few degrees of 25C
and is powered by a 5 V supply. The device is then packaged
and automatically temperature tested to specification.
+0.2
NONLINEARITY oC
+0.1
FACTORS AFFECTING AD592 SYSTEM PRECISION
The accuracy limits given on the Specifications page for the

AD592 make it easy to apply in a variety of diverse applications.
To calculate a total error budget in a given system it is important to correctly interpret the accuracy specifications, nonlinearity errors, the response of the circuit to supply voltage
variations and the effect of the surrounding thermal environment. As with other electronic designs external component selection will have a major effect on accuracy.
TYPICAL NONLINEARITY
0.1
0.2
25
+25
+70
+105
TEMPERATURE oC
CALIBRATION ERROR, ABSOLUTE ACCURACY AND

NONLINEARITY SPECIFICATIONS
Figure 3. Nonlinearity Error (AD592CN)
Three primary limits of error are given for the AD592 such that
the correct grade for any given application can easily be chosen
for the overall level of accuracy required. They are the calibration accuracy at +25C, and the error over temperature from
0C to +70C and 25C to +105C. These specifications correspond to the actual error the user would see if the current output of an AD592 were converted to a voltage with a precision
TRIMMING FOR HIGHER ACCURACY
Calibration error at 25C can be removed with a single temperature trim. Figure 4 shows how to adjust the AD592s scale factor in the basic voltage output circuit.
REV. A
AD592
+V
SUPPLY VOLTAGE AND THERMAL ENVIRONMENT

EFFECTS
AD592
R
100
VOUT = 1mV/K
950
Figure 4. Basic Voltage Output (Single Temperature Trim)
The power supply rejection characteristics of the AD592 minimizes errors due to voltage irregularity, ripple and noise. If a
supply is used other than 5 V (used in factory trimming), the
power supply error can be removed with a single temperature
trim. The PTAT nature of the AD592 will remain unchanged.
The general insensitivity of the output allows the use of lower
cost unregulated supplies and means that a series resistance of
several hundred ohms (e.g., CMOS multiplexer, meter coil
resistance) will not degrade the overall performance.
To trim the circuit the temperature must be measured by a reference sensor and the value of R should be adjusted so the output (VOUT) corresponds to 1 mV/K. Note that the trim
procedure should be implemented as close as possible to the
temperature highest accuracy is desired for. In most applications
if a single temperature trim is desired it can be implemented
where the AD592 current-to-output voltage conversion takes
place (e.g., output resistor, offset to an op amp). Figure 5 illustrates the effect on total error when using this technique.
+2.0
TOTAL ERROR oC
+1.0
+1.0
1.0
2.0
ACCURACY
WITHOUT TRIM
+0.5
TOTAL ERROR oC
25
+25
+75
+105
TEMPERATURE oC
0
Figure 7. Typical Two Trim Accuracy
AFTER SINGLE
TEMPERATURE
CALIBRATION
0.5
1.0
25
+25
+105
TEMPERATURE oC
Figure 5. Effect of Scale Factor Trim on Accuracy
If greater accuracy is desired, initial calibration and scale factor

errors can be removed by using the AD592 in the circuit of
Figure 6.
97.6k
+5V
8.66k
R1
1k
R2
5k
The thermal environment in which the AD592 is used determines two performance traits: the effect of self-heating on accuracy and the response time of the sensor to rapid changes in
temperature. In the first case, a rise in the IC junction temperature above the ambient temperature is a function of two variables; the power consumption level of the circuit and the
thermal resistance between the chip and the ambient environment (JA). Self-heating error in C can be derived by multiplying the power dissipation by JA. Because errors of this type can
vary widely for surroundings with different heat sinking capacities it is necessary to specify JA under several conditions. Table
I shows how the magnitude of self-heating error varies relative
to the environment. In typical free air applications at +25C
with a 5 V supply the magnitude of the error is 0.2C or less. A
common clip-on heat sink will reduce the error by 25% or more
in critical high temperature, large supply voltage situations.
AD741
AD1403
Table I. Thermal Characteristics

VOUT = 100mV/oC
7.87k
Medium
JA (C/watt)
(sec)*
175
130
60
55
60
40
35
30
12
10
5
2.4
AD592
V
Figure 6. Two Temperature Trim Circuit
With the transducer at 0C adjustment of R1 for a 0 V output

nulls the initial calibration error and shifts the output from K to
C. Tweaking the gain of the circuit at an elevated temperature
by adjusting R2 trims out scale factor error. The only error
remaining over the temperature range being trimmed for is
nonlinearity. A typical plot of two trim accuracy is given in
Figure 7.
REV. A
Still Air
Without Heat Sink
With Heat Sink
Moving Air
Without Heat Sink
With Heat Sink
Fluorinert Liquid
Aluminum Block**
NOTES
* is an average of five time constants (99.3% of final value). In cases where the
thermal response is not a simple exponential function, the actual thermal response may be better than indicated.
**With thermal grease.
AD592
Response of the AD592 output to abrupt changes in ambient
temperature can be modeled by a single time constant exponential function. Figure 8 shows typical response time plots for
several media of interest.
+15V
+5V
AD592
AD592
AD592
100
A
B
90
PERCENT OF FINAL TEMPERATURE
C
D
AD592
333.3
(0.1%)
80
VTAVG (1mV/K)
10k
(0.1%)
70
VTAVG (10mV/K)
F
60
A
B
C
D
E
F
50
40
30
ALUMINUM BLOCK
FLUORINERT LIQUID
MOVING AIR (WITH HEAT SINK)
MOVING AIR (WITHOUT HEAT SINK)
STILL AIR (WITH HEAT SINK)
STILL AIR (WITHOUT HEAT SINK)
Figure 9. Average and Minimum Temperature

Connections
The circuit of Figure 10 demonstrates a method in which a

voltage output can be derived in a differential temperature
measurement.
20
10
0
20 40 60 80 100 120 140 160 180 200 220 240 260 280 300
+V
TIME sec
10k
Figure 8. Thermal Response Curves
The time constant, , is dependent on JA and the thermal capacities of the chip and the package. Table I lists the effective
(time to reach 63.2% of the final value) for several different
media. Copper printed circuit board connections where neglected in the analysis, however, they will sink or conduct heat
directly through the AD592s solder dipped Kovar leads. When
faster response is required a thermally conductive grease or glue
between the AD592 and the surface temperature being measured should be used. In free air applications a clip-on heat sink
will decrease output stabilization time by 10-20%.
MOUNTING CONSIDERATIONS
If the AD592 is thermally attached and properly protected, it

can be used in any temperature measuring situation where the
maximum range of temperatures encountered is between 25C
and +105C. Because plastic IC packaging technology is employed, excessive mechanical stress must be safeguarded against
when fastening the device with a clamp or screw-on heat tab.
Thermally conductive epoxy or glue is recommended under
typical mounting conditions. In wet or corrosive environments,
any electrically isolated metal or ceramic well can be used to
shield the AD592. Condensation at cold temperatures can cause
leakage current related errors and should be avoided by sealing
the device in nonconductive epoxy paint or dips.
AD592
AD741
5M
R1
50k
AD592
VOUT = (T1 T2) x

(10mV/oC)
10k
Figure 10. Differential Measurements
R1 can be used to trim out the inherent offset between the two
devices. By increasing the gain resistor (10 k) temperature
measurements can be made with higher resolution. If the magnitude of V+ and V is not the same, the difference in power consumption between the two devices can cause a differential
self-heating error.
Cold junction compensation (CJC) used in thermocouple signal
conditioning can be implemented using an AD592 in the circuit
configuration of Figure 11. Expensive simulated ice baths or
hard to trim, inaccurate bridge circuits are no longer required.
+7.5V
2.5V
AD1403
MEASURING
JUNCTION
APPLICATIONS
APPROX.
R VALUE
J
K
T
E
S
R
52
41
41
61
6
6
10k
Cu
Connecting several AD592 devices in parallel adds the currents

through them and produces a reading proportional to the average temperature. Series AD592s will indicate the lowest temperature because the coldest device limits the series current
flowing through the sensors. Both of these circuits are depicted
in Figure 9.
THERMOCOUPLE
TYPE
AD592
Cu
REFERENCE
JUNCTION
AD OP07E
1k
VOUT
100k
RG2
(1k)
RG1
Figure 11. Thermocouple Cold Junction Compensation
REV. A
AD592
The circuit shown can be optimized for any ambient temperature range or thermocouple type by simply selecting the correct
value for the scaling resistor R. The AD592 output (1 A/K)
times R should approximate the line best fit to the thermocouple
curve (slope in V/C) over the most likely ambient temperature
range. Additionally, the output sensitivity can be chosen by
selecting the resistors RG1 and RG2 for the desired noninverting
gain. The offset adjustment shown simply references the AD592
to C. Note that the TCs of the reference and the resistors are
the primary contributors to error. Temperature rejection of 40
to 1 can be easily achieved using the above technique.
By using a differential input A/D converter and choosing the

current to voltage conversion resistor correctly, any range of
temperatures (up to the 130C span the AD592 is rated for)
centered at any point can be measured using a minimal number
of components. In this configuration the system will resolve up
to 1C.
A variable temperature controlling thermostat can easily be built
using the AD592 in the circuit of Figure 14.
+15V
Although the AD592 offers a noise immune current output, it is

not compatible with process control/industrial automation current loop standards. Figure 12 is an example of a temperature to
420 mA transmitter for use with 40 V, 1 k systems.
AD581
RPULL-UP
RHIGH
62.7k
AD592
In this circuit the 1 A/K output of the AD592 is amplified to

1 mA/C and offset so that 4 mA is equivalent to 17C and
20 mA is equivalent to 33C. Rt is trimmed for proper reading
at an intermediate reference temperature. With a suitable choice
of resistors, any temperature range within the operating limits of
the AD592 may be chosen.
COMPARATOR
RSET
10k
RHYST
10k
RLOW
27.3k
TEMP > SETPOINT

OUTPUT HIGH
TEMP < SETPOINT
OUTPUT LOW
(OPTIONAL)
C
+20V
Figure 14. Variable Temperature Thermostat
17C 4mA
33C 20A
AD581
35.7k
RT
10mV/oC
AD592
5k
RHIGH and RLOW determine the limits of temperature controlled

by the potentiometer RSET. The circuit shown operates over the
full temperature range (25C to +105C) the AD592 is rated
for. The reference maintains a constant set point voltage and
insures that approximately 7 V appears across the sensor. If it is
necessary to guardband for extraneous noise hysteresis can be
added by tying a resistor from the output to the ungrounded
end of RLOW.
1mA/oC
10k
208
5k
12.7k
500
10
Multiple remote temperatures can be measured using several

AD592s with a CMOS multiplexer or a series of 5 V logic gates
because of the devices current-mode output and supply-voltage
compliance range. The on-resistance of a FET switch or output
impedance of a gate will not affect the accuracy, as long as 4 V
is maintained across the transducer. MUXs and logic driving
circuits should be chosen to minimize leakage current related
errors. Figure 15 illustrates a locally controlled MUX switching
the signal current from several remote AD592s. CMOS or TTL
gates can also be used to switch the AD592 supply voltages,
with the multiplexed signal being transmitted over a single
twisted pair to the load.
VT
20V
Figure 12. Temperature to 420 mA Current Transmitter
Reading temperature with an AD592 in a microprocessor based

system can be implemented with the circuit shown in Figure 13.
+5V
BPO/UPO
VCC
FORMAT
AD592
VI N HI
AD1403
VI N LO
AD670
ADCPORT
+15V
8 BITS
OUT
9k
SPAN
TRIM
CENTER
POINT
TRIM
100
950
VIN HI
VOUT
T8
GND
200
T2
T1
AD7501
REMOTE
AD592s
D
E
C
O
D
E
R
/
S1
VI N LO
1k
15V
S2
R/W
CS
CE
S8
P CONTROL
D
R
I
V
E
R
10k
TTL DTL TO
CMOS I/O
Figure 13. Temperature to Digital Output

EN
CHANNEL
SELECT
Figure 15. Remote Temperature Multiplexing
REV. A
To convert the AD592 output to C or F a single inexpensive

reference and op amp can be used as shown in Figure 17. Although this circuit is similar to the two temperature trim circuit
shown in Figure 6, two important differences exist. First, the
gain resistor is fixed alleviating the need for an elevated temperature trim. Acceptable accuracy can be achieved by choosing
an inexpensive resistor with the correct tolerance. Second, the
AD592 calibration error can be trimmed out at a known convenient temperature (i.e., room temperature) with a single pot adjustment. This step is independent of the gain selection.
To minimize the number of MUXs required when a large number of AD592s are being used, the circuit can be configured in a
matrix. That is, a decoder can be used to switch the supply voltage to a column of AD592s while a MUX is used to control
which row of sensors are being measured. The maximum number of AD592s which can be used is the product of the number
of channels of the decoder and MUX.
An example circuit controlling 80 AD592s is shown in Figure
16. A 7-bit digital word is all that is required to select one of
the sensors. The enable input of the multiplexer turns all the
sensors off for minimum dissipation while idling.
COLUMN
SELECT
+15V
4028 BCD TO DECIMAL DECODER
+5V
ROW
SELECT
2.5V
AD1403
RGAIN
ROFFSET
R
oC
oF
RCAL
ROFFSET
RGAIN
9.1k
9.8k
100k
180k
C819b27/93
AD592
AD741
VOUT = 100mV/(oC OR oF)
ROFFSET/RGAIN
AD592
VOUT
AD7501
8-CHANNEL MUX
10k
Figure 17. Celsius or Fahrenheit Thermometer
+15V
15V
EN
80 AD592s
Figure 16. Matrix Multiplexer
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
0.205 (5.20)
0.175 (4.96)
0.135
(3.43)
MIN
0.210 (5.33)
0.170 (4.32)
PRINTED IN U.S.A.
0.050
(1.27)
MAX
SEATING
PLANE
0.019 (0.482)
0.016 (0.407)
SQUARE
0.500
(12.70)
MIN
0.055 (1.39)
0.045 (1.15)
0.105 (2.66)
0.095 (2.42)
0.105 (2.66)
0.080 (2.42)
0.105 (2.66)
0.080 (2.42)
0.165 (4.19)
0.125 (3.94)
BOTTOM VIEW
REV. A
LM139-N, LM239-N, LM2901-N, LM3302-N, LM339-N

www.ti.com
SNOSBJ3D NOVEMBER 1999 REVISED MARCH 2013
LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators

Check for Samples: LM139-N, LM239-N, LM2901-N, LM3302-N, LM339-N
FEATURES
APPLICATIONS
Wide Supply Voltage Range

LM139/139A Series 2 to 36 VDCor 1 to 18 VDC
LM2901: 2 to 36 VDCor 1 to 18 VDC
LM3302: 2 to 28 VDCor 1 to 14 VDC
Very Low Supply Current Drain (0.8 mA)
Independent of Supply Voltage
Low Input Biasing Current: 25 nA
Low Input Offset Current: 5 nA
Offset Voltage: 3 mV
Input Common-Mode Voltage Range Includes
GND
Differential Input Voltage Range Equal to the
Power Supply Voltage
Low Output Saturation Voltage: 250 mV at 4
mA
Output Voltage Compatible with TTL, DTL,
ECL, MOS and CMOS Logic Systems
ADVANTAGES
High Precision Comparators

Reduced VOS Drift Over Temperature
Eliminates Need for Dual Supplies
Allows Sensing Near GND
Compatible with all Forms of Logic
Power Drain Suitable for Battery Operation
Limit Comparators
Simple Analog-to-Digital Converters
Pulse, Squarewave and Time Delay Generators
Wide Range VCO; MOS Clock Timers
Multivibrators and High Voltage Digital Logic
Gates
DESCRIPTION
The LM139 series consists of four independent
precision voltage comparators with an offset voltage
specification as low as 2 mV max for all four
comparators. These were designed specifically to
operate from a single power supply over a wide range
of voltages. Operation from split power supplies is
also possible and the low power supply current drain
is independent of the magnitude of the power supply
voltage. These comparators also have a unique
characteristic in that the input common-mode voltage
range includes ground, even though operated from a
single power supply voltage.
The LM139 series was designed to directly interface
with TTL and CMOS. When operated from both plus
and minus power supplies, they will directly interface
with MOS logic where the low power drain of the
LM339 is a distinct advantage over standard
comparators.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright 19992013, Texas Instruments Incorporated
LM139-N, LM239-N, LM2901-N, LM3302-N, LM339-N

SNOSBJ3D NOVEMBER 1999 REVISED MARCH 2013
www.ti.com
One-Shot Multivibrator with Input Lock Out
Connection Diagrams
Figure 1. CDIP, SOIC, PDIP Packages Top View

See Package Numbers J0014A, D0014A, NFF0014A
Figure 2. CLGA Package

See Package Numbers NAD0014B, NAC0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Submit Documentation Feedback
Copyright 19992013, Texas Instruments Incorporated
Product Folder Links: LM139-N LM239-N LM2901-N LM3302-N LM339-N

Order this document

by 2N3055/D
SEMICONDUCTOR TECHNICAL DATA

. . . designed for generalpurpose switching and amplifier applications.
*Motorola Preferred Device
DC Current Gain hFE = 20 70 @ IC = 4 Adc

CollectorEmitter Saturation Voltage
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
115 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
60
Vdc
CollectorEmitter Voltage
VCER
70
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB
Vdc
Collector Current Continuous
IC
15
Adc
Base Current
IB
Adc
Total Power Dissipation @ TC = 25_C

Derate above 25_C
PD
115
0.657
Watts
W/_C
TJ, Tstg
65 to + 200
_C
Symbol
Max
Unit
RJC
1.52
_C/W
Operating and Storage Junction Temperature

Range
CASE 107
TO204AA
(TO3)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

v
v
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)
VCEO(sus)
60
Vdc
CollectorEmitter Sustaining Voltage (1)

(IC = 200 mAdc, RBE = 100 Ohms)
VCER(sus)
70
Vdc
Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
ICEO
0.7
mAdc
Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
1.0
5.0
Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
20
5.0
70
1.1
3.0
*OFF CHARACTERISTICS
mAdc
mAdc
*ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.5
Vdc
Is/b
2.87
Adc
Current Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
MHz
*SmallSignal Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
15
120
*SmallSignal Current Gain Cutoff Frequency

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
fhfe
10
kHz
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
DYNAMIC CHARACTERISTICS
* Indicates Within JEDEC Registration. (2N3055)

(1) Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
2N3055, MJ2955
20
IC, COLLECTOR CURRENT (AMP)
50 s
10
dc
1 ms
6
4
500 s
250 s
1
0.6
0.4
0.2
BONDING WIRE LIMIT

THERMALLY LIMITED @ TC = 25C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
6
10
20
40
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature according to Figure 1.
60
Figure 2. Active Region Safe Operating Area

NPN
2N3055
PNP
MJ2955
500
200
300
VCE = 4.0 V
TJ = 150C
VCE = 4.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
200
25C
100
55C
70
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
25C
100
70
55C
50
30
20
10
10
TJ = 150C
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
2.0
TJ = 25C
1.6
IC = 1.0 A
4.0 A
8.0 A
1.2
0.8
0.4
0
5.0
10
20
50
100 200
500
IB, BASE CURRENT (mA)
1000 2000
5000
2.0
TJ = 25C
1.6
IC = 1.0 A
4.0 A
8.0 A
1.2
0.8
0.4
0
5.0
10
20
50
100 200
500
IB, BASE CURRENT (mA)
1000 2000
5000
Figure 4. Collector Saturation Region
1.4
2.0
TJ = 25C
1.2
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 4.0 V
0.4
1.2
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.8
0.4
0.2
0
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
0.1
IC, COLLECTOR CURRENT (AMPERES)
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
Figure 5. On Voltages
DATA SHEET
BD135
BD137
BD139
NPN SILICON TRANSISTORS
JEDEC TO-126 CASE
DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier and switching applications.
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation (Tmb70C)
Power Dissipation (TA=25C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
PD
BD135
45
45
TJ,Tstg
J-mb
J-A
BD137
60
60
5.0
1.5
2.0
0.5
1.0
8.0
1.25
-65 to +150
10
100
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)

BD135
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=30V
100
ICBO
VCB=30V, TC=125C
10
IEBO
VEB=5.0V
100
BVCEO
IC=30mA
45
VCE(SAT)
IC=500mA, IB=50mA
0.5
VBE(ON)
VCE=2.0V, IC=500mA
1.0
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
250
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=50mA, f=100MHz
190 TYP
SYMBOL
hFE
BD137
MIN MAX
100
10
100
60
0.5
1.0
40
63
250
25
190 TYP
BD135-10
BD137-10
BD139-10
MIN MAX
63
160
TEST CONDITIONS
VCE=2.0V, IC=150mA
BD139
100
80
UNIT
V
V
V
A
A
A
A
W
W
C
C/W
C/W
BD139
MIN MAX
100
10
100
80
0.5
1.0
40
63
250
25
190 TYP
UNIT
nA
A
nA
V
V
V
MHz
BD135-16
BD137-16
BD139-16
MIN MAX
100
250
(SEE REVERSE SIDE)

R2
BD135 / BD137 / BD139
NPN SILICON TRANSISTOR
JEDEC TO-126 CASE - MECHANICAL OUTLINE
D
E
F
BACKSIDE
1
N
M
H
B
J
C
K
L
R2
Lead Code:
1. Emitter
2. Collector
3. Base
Mounting Pad is Common to Pin 2
SYMBOL
A
B
C
D
E
F
G
H
J
K
L
M
N
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.094 0.106 2.40
2.70
0.050
1.27
0.015 0.030 0.38
0.75
0.291 0.307 7.40
7.80
0.148
3.75
0.118 0.126 3.00
3.20
0.413 0.435 10.50 11.05
0.618
15.70
0.025 0.035 0.64
0.90
0.089
2.25
0.177
4.50
0.045 0.055 1.14
1.39
0.083
2.10
TO-126 (REV:R2)
1N4001 - 1N4007
1.0A RECTIFIER
Please click here to visit our online spice models database.
Features
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Page 2
Marking: Type Number
Weight: 0.30 grams (approximate)
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Dim
Maximum Ratings and Electrical Characteristics @TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
VRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current (Note 1) @ TA = 75C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
IFSM
single half sine-wave superimposed on rated load
Forward Voltage @ IF = 1.0A
VFM
Peak Reverse Current @TA = 25C
IRM
at Rated DC Blocking Voltage @ TA = 100C
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance Junction to Ambient
RJA
Maximum DC Blocking Voltage Temperature
TA
Operating and Storage Temperature Range
TJ, TSTG
Notes:
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Unit
50
100
200
400
600
800
1000
35
70
140
280
1.0
420
560
700
V
A
30
1.0
5.0
50
15
A
8
100
+150
-65 to +150
pF
K/W
C
C
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
DS28002 Rev. 8 - 2
1 of 3
www.diodes.com
1N4001-1N4007
Diodes Incorporated
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
40
60
80
100
120
140
160
10
1.0
0.1
Tj, = 25oC
Pulse Width = 300 s
2% Duty Cycle
0.01
0.6
180
TA, AMBIENT TEMPERATURE (C)

Fig. 1 Forward Current Derating Curve
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics
50
100
f = 1MHz
40
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj = 25C
30
20
1N4001 - 1N4004
10
1N4005 - 1N4007
10
1.0
1.0
10
1.0
100
10
100
VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Ordering Information (Note 4)

Device
1N4001-B
1N4001-T
1N4002-B
1N4002-T
1N4003-B
1N4003-T
1N4004-B
1N4004-T
1N4005-B
1N4005-T
1N4006-B
1N4006-T
1N4007-B
1N4007-T
Notes:
Packaging
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
Shipping
1K/Bulk
5K/Tape & Reel, 13-inch
1K/Bulk
1K/Bulk
1K/Bulk
1K/Bulk
1K/Bulk
1K/Bulk
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS28002 Rev. 8 - 2
2 of 3
www.diodes.com
1N4001-1N4007
Diodes Incorporated
BZX85C3V3 - BZX85C56
Zener Diodes
Tolerance = 5%
DO-41 Glass Case

COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.
Symbol
PD
TJ, TSTG
Parameter
Value
Power Dissipation @ TA = 25C

Power Dissipation @ TL = 25C at 4 mm distance from the glass
package
Derate above 50C
Operating and Storage Temperature Range
1.0
2007 Fairchild Semiconductor Corporation

BZX85C3V3 - BZX85C56 Rev. 1.1.0
1.3
6.67
-65 to +200
Units
W
mW/C
C
www.fairchildsemi.com
1
BZX85C3V3 - BZX85C56 Zener Diodes
September 2013
Values are at TA = 25C unless otherwise noted.
Device
Zener Voltage(1)
VZ (V)
IZ
Min.
Max.
mA
BZX85C3V3
3.1
3.5
80
BZX85C3V6
3.4
3.8
60
60
BZX85C3V9
3.7
4.1
4.6
50
BZX85C4V3
4.0
BZX85C4V7
4.4
5
45
BZX85C5V1
4.8
5.4
45
BZX85C5V6
5.2
6
45
BZX85C6V2
5.8
6.6
35
BZX85C6V8
6.4
7.2
35
BZX85C7V5
7.0
7.9
35
BZX85C8V2
7.7
8.7
25
BZX85C9V1
8.5
9.6
25
BZX85C10
9.4
10.6
25
BZX85C11
10.4
11.6
20
BZX85C12
11.4
12.7
20
BZX85C13
12.4
14.1
20
BZX85C15
13.8
15.6
15
BZX85C16
15.3
17.1
15
BZX85C18
16.8
19.1
15
BZX85C20
18.8
21.2
10
BZX85C22
20.8
23.3
10
BZX85C24
22.8
25.6
10
BZX85C27
25.1
28.9
8
BZX85C30
28
32
8
BZX85C33
31
35
8
8
34
38
BZX85C36
6
41
BZX85C39
37
6
46
BZX85C43
40
4
50
BZX85C47
44
4
54
48
BZX85C51
BZX85C56
52
60
4
VF Forward Voltage = 1.2 V Max @ IF = 200 mA
Zener Impedance
ZZ @ IZ
ZZK @ IZK
()
()
(mA)
20
15
15
13
13
10
7
4
3.5
3
5
5
7
8
9
10
15
15
20
24
25
25
30
30
35
40
45
50
90
115
120
400
500
500
500
600
500
400
300
300
200
200
200
200
300
350
400
500
500
500
600
600
600
750
1000
1000
1000
1000
1000
1500
1500
2000
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
IR @ VR
A Max.
Volts
60
30
5
3
3
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1.5
2
2
3
4
4.5
5
6.5
7
7.7
8.4
9.1
10.5
11
12.5
14
15.5
17
19
21
23
25
27
30
33
36
39
Note:
1. Zener Voltage (VZ): The zener voltage is measured with the device junction in the thermal equilibrium
at the lead temperature (TL) at 30C 1C and 3/8 lead length.

BZX85C3V3 - BZX85C56 Rev. 1.1.0
2
Electrical Characteristics
Device
Line 1
Line 2
Line 3
BZX85C3V3
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
BZX85C5V6
BZX85C6V2
BZX85C6V8
BZX85C7V5
BZX85C8V2
BZX85C9V1
BZX85C10
BZX85C11
BZX85C12
BZX85C13
BZX85C15
BZX85C16
BZX85C18
BZX85C20
BZX85C22
BZX85C24
BZX85C27
BZX85C30
BZX85C33
BZX85C36
BZX85C39
BZX85C43
BZX85C47
BZX85C51
BZX85C56
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
85C
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56

BZX85C3V3 - BZX85C56 Rev. 1.1.0
Line 4
Line 5
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
3
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Disseny D'una Font D'alimentació, Un Sensor de Temperatura I Un Sensor de Nivell

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Disseny D'una Font D'alimentació, Un Sensor de Temperatura I Un Sensor de Nivell

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Projecte

Disseny duna font dalimentaci, un sensor

Memria descriptiva .....................................................................................................2

Sensor de temperatura .........................................................................................2

Sensor de nivell ...................................................................................................3

Font dalimentaci ..............................................................................................4

Sensor de temperatura .........................................................................................4

Sensor de nivell ...................................................................................................6

Font dalimentaci ..............................................................................................8

Sensor de temperatura .........................................................................................9

Sensor de nivell ...................................................................................................9

Font dalimentaci ............................................................................................10

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

, seran tils per configurar el comparador.

La tensi a 50C ha de ser:

La tensi a 40C ha de ser:

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Saproxima a 1 K, perqu s la resistncia que trobarem en el mercat.

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

La tensi a entre R3 i R4 ha de ser:

La tensi entre R4 i R5 ha de ser:

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

3.3. Font dalimentaci

El T1 s un transistor 2N3055 amb una Beta1 de 40 i el T2 s un transistor BD135 amb

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

4.2. Sensor de nivell

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

4.3. Font dalimentaci

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Es suposa una alimentaci de 12 V en el circuit de sensor de temperatura i en el

Sensor de Temperatura Analog Devices

El pressupost pel sensor de nivell s el segent:

Tubing de Inox para electrodos

Projecte dElectrnica. Curs 2014-2015

Disseny duna font dalimentaci, un sensor de temperatura i de nivell

Resistencias 1K 10% 0.5 W

Diodo de Seal !N4148

Transistor de Seal 2N2907

El pressupost per la font dalimentaci s el segent:

Diodo rectificador 1 A 1N4007

Diodo Zener 13 V BZX85C13

El cost total dels materials pel projecte s de 68 .

Projecte dElectrnica. Curs 2014-2015

AD592SPECIFICATIONS (typical @ T = +258C, V = +5 V, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS

TEMPERATURE SCALE CONVERSION EQUATIONS

Typical Performance CurvesAD592

AD592CN Accuracy Over Temperature

AD592BN Accuracy Over Temperature

Long-Term Stability @ +125C

Long-Term Stability @ +85 C and 85% Relative Humidity