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Instructor: Dr. Ali Medi
MESFET Operation
I ds = qN d (h a )wv
v = E
Vds
E=
s
2 0 r (Vbi Vgs )
a =
qN d
I ds
gm =
Vgs
1
2
Vds =Const
Lecture 5 Active Devices
I ds
gm =
Vgs
Lecture 5 Active Devices
Vds =Const
Frequency
gm
fT =
2 (C gs + C gd )
fT =
fT =
veff
2Lg
gm
Rs + Rd
2 (C gs + C gd )1 +
Rds
+ g mC gd (Rs + Rd )
14GHz
6GHz
S21
18GHz
1
2GHz
S12 / .06
0
-4
-3
-2
-1
Re
0
-1
-2
-3
-4
FET Example
b1 S11
b = S
2 21
S12 a1
S 22 a2
in
b1
S 21S12 L
in = = S11 +
a1
1 S 22 L
Lecture 5 Active Devices
a1
b1
a2
b2
b1 S11
b = S
2 21
out
S12 a1
S 22 a2
S 21S12 s
b2
=
= S 22 +
a2
1 S11s
Lecture 5 Active Devices
a1
b1
a2
b2
out
Stability
Transistor is unstable when |in
i | >1
b1
S 21S12 L
in = = S11 +
a1
1 S 22 L
Boundary Condition for Stability
S 21S12 L
S11 +
=1
1 S 22 L
Lecture 5 Active Devices
Stability
Transistor is unstable when |outt| >1
out
S 21S12 s
b2
=
= S 22 +
a2
1 S11s
S 21S12 s
S 22 +
=1
1 S 22 s
Lecture 5 Active Devices
Unconditional Stability
If all of the smith chart is in a stable region
then the transistor is said to be
unconditionally stable
stable.
in or out <1 for all values of L or S
1 S11 S 22 +
2
K=
2 S12 S 21
= S11S 22 S12 S 21
Lecture 5 Active Devices