ABSTRACT

NON VOLATILE MEMORIES

For over 40 years, the evolution of Non Volatile Memories has
been mostly based on the floating gate MOS transistor. We
have successfully succeeded in scaling this wonderful device
below 20nm but we are now approaching the limit. It is time
for disruptive innovations, either integrating the same basic
device in a vertical structure or moving to totally different
device concepts. This paper analyzes the different alternatives
in relation to their areas of application.

Nitish kumar
201316901
ELE-C