Professional Documents
Culture Documents
10
25 C (0.23)
O
90 C (0.25)
O
150 C (0.27)
-1
10
VT (V)
Abstract
-2
10
TPHY=36A, VG=-4.5V
-3
10
-1
10
10
10 10 10
stress time (s)
10
10
R
Also, (2*) may be restated as a conservation
equation which requires that the number of broken
Si-H bonds equal that of total H concentration in
the gate stack, i.e.,
N IT (t )
x ( t ) f ( DH , H ,t )
x 0
N H ( x, t )dx .
(2)
N IT (t )
kF N0
2k R
( DH t ) 4 .
(3)
k N
N IT (t ) f 0
2k R
2/3
( DH 2 t )
(4)
N IT (t )
H Eox t
Here Eox is the velocity with which the H+ driftfront moves away from the interface as shown in
Fig. 2 (bottom figure). Together with Eq. (1), we
find [11]
N IT (t )
kF N0
kR
H Eox t
(5)
k N
N IT (t ) F 0 0
kR 0
0.5
D00.25 e
0.5( EF ER ) 0.25 ED
k BT
0.25
N IT
N0
N IT
N 0
ln 1
kF
DH
kR
2
t
1 e
(6)
N IT (t )
Tox 2
DH ( poly )
DH( ox )
N IT (t )
2k R
( poly )
H
1/ 4
N H (0) N IT .
kR
DH
N H (0)
DH t
DH k F
t k R
N 0 N IT
N IT
3.1.3 Hypothesis of
Measurement Delay
Saturation
due
to
VT
Ref. (8)
On-the-fly (0.138)
50 ms delay (0.189)
10
VT [mV]; ID
sat
Degradation (%)
Ref. (17)
0.4s delay (0.20)
3.0s delay (0.21)
10 s delay (0.22)
100s delay (0.24)
IDSAT
10
10
10
Stress Time (sec)
10
10
-1
-1
15
-2
EOT=12.3A , Dose=2.34x10 cm
stress (-VG)
1.9V
O
T=100 C
2.1V
10
10
EOT=12.3A
stress VG=-2.1V
-1
stress VG=-2.1V
slope=0.14
slope=0.14
T=100 C
VT (V )
VT (V )
VT (V )
T=100 C
T=27 C
T=27 C
10
slope=0.14
-2
10
10
10
10
stress time (s)
15
T=27 C
-2
10
10
10
10
10
stress time (s)
-2
10
-2
10
21.4, 1.44x10
15
12.3, 2.34x10
15
10
10
10
stress time (s)
Fig.7. Time evolution of NBTI VT shift obtained from on-the-fly IDLIN measurements for different
stress bias, temperature, film thickness and N 2 dose. Universal power-law slope of n~0.16 is obtained.
k N
N IT (t ) F 0 0 D0n e
kR0
m ( EF ER ) nED
k BT
n
(the diffusing specie determine m and n, see Eq. 24). For Arrhenius transport, therefore, the
degradation curves ( ln(NIT) vs. ln(t) ) measured at
various temperatures as a function of time should
be parallel to each other.
Over the years, some authors have questioned this
presumption of Arrhenius-like activation, because
H transport in amorphous SiO2 is known to be
dispersive [2]. This dispersive diffusion coefficient
is given by DH ~ DH0 (t)-a [33-35] where a is the
dispersion parameter. Therefore, Eq. (2-4) should
be rewritten as
m
k N D
N IT (t ) F 0 0 H 0 e
kR 0 v
m ( EF ER )
k BT
vt
n (1 a )
N IT (t ) At n '
m
k N D
with A F 0 0 H 0 v n ' and n=nKBT/E0.
kR 0 v
For dispersive transport, therefore, both the timeexponent n as well as the prefactor, ln(A) [2],
should scale linearly with T. Indeed, classical (with
delay) measurement of NBTI degradation do show
that n (Fig. 8) scales linearly with temperature,
with dispersion parameter a=0.7 (25C)-0.57
(200C) for H+ transport (i.e., n=0.5), and a=0.4
(25C)-0.1(200C) for diffusion of atomic H
(n=0.25) [1, 2]. Moreover, dispersive-drift of H+
(proton) anticipates that log(t) recovery of N IT once
the stress is removed and such log(t) recovery
has been observed in experiments [20]. Therefore,
one concludes that both NBTI time-exponent as
well as temperature activation are dictated by
dispersive transport of H+. This conclusion of H+
transport contradicts the analysis in Sec. 3.1 which
resolved that only H2 diffusion can consistently
interpret NBTI experiments.
0.30
0.28
time exponent
0.26
0.05s (delay)
0.35s
1s
0.24
0.22
0.20
0.18
0.16
0.14
0
50
100
150
O
Temperature ( C)
200
50 C, 0.174, 0.14
10
11
10
10
TPHY=26A
VG=-3.1V
10
SILC
10
10
10
10
stress time (s)
10
2x10
-1
t0=20-40s
On-the-fly Idlin
VG(stress)=-1.9V
-3
5x10 -1
0
1
2
3
4
5
10 10 10 10 10 10 10
stress time (s)
Fig.9. Measurement of NBTI degradation using
On-the-Fly IDLIN. Short-time data show
temperature dependent time exponent. Long time
curves are parallel to each other.
T=27 C
0.0
1.5
2.0
2.5
-2
-2
VB=0V
VB=2V
Difference
10
t0=2-4s
2x10
NIT (x10 cm )
VT (V)
10
-2
NIT (cm )
10
-1
SILC = JG/JG(t=0)
10
2x10
TPHY=22A
Generated at 1000s
Recovered at next 1000s
2.4
2.5
2.6
stress -VG (V)
2.7
-2
On-the-fly Idlin
generated in the presence of reverse V B breaks SiO bonds. Broken Si-O bonds at the oxide bulk
gives rise to SILC [39, 40], and those near the
Si/SiO2 interface show up as additional NIT. As a
further proof, Figure 10 (bottom) shows the recovery
of NIT after stress without and with VB. Identical
recovery following VB=0 and VB>0 stress suggests
that additional NIT created during VB>0 stress does
not recover after stress. This is consistent with the
above picture as no known mechanism exists for
recovery of broken Si-O bonds. It is very important
to choose proper NBTI stress condition to avoid
generation of hot holes and additional N IT due to
broken Si-O bonds, so that R-D model can be used
for reliable prediction of device lifetime. This is an
important prerequisite for any comparison with
experimental data and theoretical model.
delay
corrected
10
-2
E corrected
As measured C-P
O
VG=-3.0V; T=150 C
PNO (2.14nm)
10
-3
10
10
10
stress time (s)
10
10
References
11
12
13