FCH76N60NF

FCH76N60NF
N-Channel SupreMOS FRFET MOSFET

600 V, 72.8 A, 38 m
Features
Description
RDS(on) = 28.7 m (Typ.) @ VGS = 10 V, ID = 38 A
The SupreMOS MOSFET is Fairchild Semiconductors next

generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SupreMOS FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and
improve system reliability.
Ultra Low Gate Charge (Typ. Qg = 230 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)
100% Avalanche Tested
RoHS Compliant
Application
Solar Inverter
AC-DC Power Supply
G
G
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage

- Continuous (TC = 25oC)
FCH76N60NF
600
Unit
V
30
72.8
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
24.3
EAR
Repetitive Avalanche Energy
(Note 1)
5.43
mJ
dv/dt
- Continuous (TC = 100oC)

- Pulsed
46
(Note 1)
218
(Note 2)
7381
mJ
MOSFET dv/dt
100
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
TL
- Derate above 25oC
50
V/ns
543
4.34
W/oC
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
RJA
Thermal Resistance, Junction to Ambient, Max.
2011 Fairchild Semiconductor Corporation

FCH76N60NF Rev. C1
FCH76N60NF
Unit
0.23
oC/W
40
www.fairchildsemi.com
FCH76N60NF N-Channel SupreMOS FRFET MOSFET
November 2013
Part Number
FCH76N60NF
Top Mark
FCH76N60NF
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
0.73
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1 mA, VGS = 0 V, TC = 25oC

ID = 1 mA, Referenced to
25oC
VDS = 480 V, VGS = 0 V
10
VDS = 480 V, VGS = 0 V, TC = 125oC
100
VGS = 30 V, VDS = 0 V
100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 A
3.0
5.0
Static Drain to Source On Resistance
VGS = 10 V, ID = 38 A
28.7
38.0
gFS
Forward Transconductance
VDS = 20 V, ID = 38 A
92
VDS = 100 V, VGS = 0 V

f = 1 MHz
8305
11045
pF
361
480
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
3.3
5.0
Coss
Output Capacitance
VDS = 380 V, VGS = 0V, f = 1 MHz
192
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 380 V, VGS = 0 V
896
pF
Qg(tot)
Total Gate Charge at 10V
230
300
nC
Gate to Source Gate Charge
VDS = 380 V, ID = 38 A,
VGS = 10 V
Qgs
44
nC
95
nC
1.2
51
112
ns
44
98
ns
213
436
ns
43
96
ns
Qgd
Gate to Drain Miller Charge
ESR
Equivalent Series Resistance(G-S)
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 38 A
RG = 4.7
(Note 4)
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
76
ISM
Maximum Pulsed Drain to Source Diode Forward Current
228
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
1.2
trr
Reverse Recovery Time
200
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 38 A
dIF/dt = 100 A/s
1.8
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 24.3 A, RG = 25 , starting TJ = 25C.
3. ISD 72.8 A, di/dt 1200 A/s, VDD 380 V, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.

FCH76N60NF Rev. C1
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
500
VGS = 15V
10V
8V
6V
5.5V
5V
4.5V
100
ID, Drain Current[A]
ID, Drain Current[A]
100
10
150 C
o
25 C
10
-55 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
2
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
10
20
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
400
45
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
4
6
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
50
40
VGS = 10V
35
VGS = 20V
30
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
25
*Note: TC = 25 C
50
100
150
ID, Drain Current [A]
200
1
0.0
250
Figure 5. Capacitance Characteristics
2. 250s Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage [V]
Coss
4
Capacitances [pF]
10
Ciss
10
Crss
2
10
*Note:
1. VGS = 0V
2. f = 1MHz
10 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
1
0.01
0.1
1
10
100
VDS, Drain-Source Voltage [V]

FCH76N60NF Rev. C1
600
VDS = 120V
VDS = 300V
VDS = 480V
*Note: ID = 38A
60
120
180
Qg, Total Gate Charge [nC]
240
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 38A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current

vs. Case Temperature
80
1000
30s
100
100s
2.5
1ms
10
10ms
Operation in This Area

is Limited by RDS(on)
DC
1
*Notes:
o
1. TC = 25 C
0.1
60
40
20
2. TJ = 150 C
3. Single Pulse
0.01
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
ZJC(t), Thermal Response [oC/W]

Thermal Response [ZJC]
Figure 11. Transient Thermal Response Curve

0.3
0.1
0.5
0.2
PDM
0.1
0.01
t1
0.05
0.02
0.01
1. ZJC(t) = 0.23 C/W Max.

2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
1E-3
-5
10
t2
*Notes:
-4
10
-3
10
-2
10
-1
10
10
10
[sec]
tRectangular
PulseDuration
Duration [sec]
1, RectangularPulse

FCH76N60NF Rev. C1
Typical Performance Characteristics (Continued)
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FCH76N60NF Rev. C1
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FCH76N60NF Rev. C1
Mechanical Dimensions
Figure 16. TO-247, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003

FCH76N60NF Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FCH76N60NF Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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Sync-Lock
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FCH76N60NF

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FCH76N60NF

N-Channel SupreMOS FRFET MOSFET

RDS(on) = 28.7 m (Typ.) @ VGS = 10 V, ID = 38 A

The SupreMOS MOSFET is Fairchild Semiconductors next

Ultra Low Gate Charge (Typ. Qg = 230 nC)

MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Drain to Source Voltage

Gate to Source Voltage

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Continuous (TC = 100oC)

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

- Derate above 25oC

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2011 Fairchild Semiconductor Corporation

FCH76N60NF N-Channel SupreMOS FRFET MOSFET

Electrical Characteristics TC = 25oC unless otherwise noted.

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

ID = 1 mA, VGS = 0 V, TC = 25oC

VDS = 480 V, VGS = 0 V

VDS = 480 V, VGS = 0 V, TC = 125oC

Gate Threshold Voltage

VGS = VDS, ID = 250 A

Static Drain to Source On Resistance

VDS = 100 V, VGS = 0 V

Reverse Transfer Capacitance

VDS = 380 V, VGS = 0V, f = 1 MHz

Effective Output Capacitance

VDS = 0 V to 380 V, VGS = 0 V

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

Equivalent Series Resistance(G-S)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2011 Fairchild Semiconductor Corporation

FCH76N60NF N-Channel SupreMOS FRFET MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current[A]

ID, Drain Current[A]

Figure 3. On-Resistance Variation vs.

IS, Reverse Drain Current [A]

Figure 4. Body Diode Forward Voltage

Figure 5. Capacitance Characteristics

2. 250s Pulse Test

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

10 Ciss = Cgs + Cgd (Cds = shorted)

2011 Fairchild Semiconductor Corporation

FCH76N60NF N-Channel SupreMOS FRFET MOSFET