&

SCHOTTKY
ZnO

.. 3517

. . .

2013

Schottky (ZnO)
. (Au,
Pd, Ag, Pt) ZnO. Schottky
(Au) ZnO .
ZnO (bulk ZnO) (thin films) -
- (nanorods, nanoparticles). ,
ZnO (
magnetron sputtering),
.
, - -
Schottky, , ,
ZnO.
.
,
Schottky ZnO,
(Au), : Au/ZnO:H/c-Si(n)/Al.

Schottky Au nO - .

-V C-V,
.

-
.

Au/ZnO:H/c-Si(n)/Al,
:

ZnO,

Schottky

(, , lift-off), .

I-V C-V.

- (J-V), (~300 )
300-420 , -
(C-V).
.
,
,
.

,
,
.
:

.
.
.


.

. ,
.
.
, ,
.
.... .
,
II

/
. ,

.

2013

III

1.......................1

Au/ZnO- .......1

1.1 .........................................................................................................1
1.2

I-V Schottky Au ZnO......2

1.3

I-V C-V Schottky Au ZnO..6

1.4

I-V C-V Schottky Au Zn.....18

..21

2..............................23

- Schottky.23

2.1

- n23

2.2

- p25

2.3

-..26

2.4

Schottky..27

2.5

30

2.6

-...37
...39

IV

3..40

Schottky Au/ZnO ......40

3.1

......................................................................................40

3.2

nO DC-Magnetron Sputtering...................................41

3.3

- (u)-Lift 0ff- (l).. 44

3.4

Schottky Au/ZnO.......................50
3.4.1

...............................................................................................50

3.4.2 -V.........................................................................................51
3.4.3 C-V........................................................................................52
......................................................................................................53

4..54
................................................................54
4.1

-.....................................................................54
4.1.1

Schottky
Au/ZnO:H/c- Si/Al (300 K)..................54

4.1.2

Schottky
Au/ZnO:H/c- Si/Al *2+.64

4.2

-.............................................................80
...83

5..84
........................84
5.1

..84

5.2

86

VI

Au/ZnO

1
Au/ n

1.1
, ZnO
, -n
, Zn.
ZnO 1960
*1+ *2+
2000
ZnO *3+.
ZnO
(Transparent

Conductive

Oxide,

TCO),

*4+.
*5+.
TCO, ZnO
(Si, InGaAs,
GaAs) *6+. 3.4 eV,
(60 meV),

, *7+.

lasers LEDS *8+.

*9+.

ZnO p-,
7

Au/ZnO

. ,
ZnO n-
*10+. Schottky
ZnO , ,
,
.
Schottky ZnO, ZnO
, (Au), (Pd) *11+, (Pt)
*12+ (g).
Schottky (0,6 0,84 eV) n- ZnO.

Schottky ,
ZnO.
Au ZnO ,
(> 340 ).
Schottky ZnO (ZnO:H),

*13, 14+.

1.2 I-V Schottky Au ZnO

B.J. Coppa et al. *15+
Schottky n- ZnO (0001),

O2/He. .
, ,
20% /80% He 510 Torr, 525 C 30
, 20 W.

.
525 C 25 C ,

8

Au/ZnO

30 .
B.J. Coppa et al. Schottky 0.1 mm
Au,
(e-beam-evaporation) ZnO.
I-V (~293 )
Schottky ZnO,
, ~4.6 4 V
. 2.
4 V.
, - (
XPS ).
.
I-V

, .
, ~4.6 -4 V 36 nA,
-4 V -4.5 V
~1.86 ( > 2).
30 ,
: : -7 V,
: ~ 20 pA , : 1.03
b 0.670.05 eV. 1.1 1.2
I-V
( )
, . B.J. Coppa et al.

ZnO ,

Schottky.

Au/ZnO

1.1
I-V Schottky Au
0.1mm ZnO (1 ) [15].

H. L. Mosbacker et al *16+
20% 2/80% e ( 30 W, 1010 Torr)
, ZnO ,
: ,
0.1 nm
5 nm,
, 2 nm.
Schottky 0.5 mm

1.2
I-V (a) (b) Schottky Au
0.1mm ZnO O2/He (2 ).
I-V (c) (d) Schottky Au
0.1mm ZnO O2/He,
30 (3 ) [15].
10

Au/ZnO

.
I-V
ZnO
O2/He, .


. 1.3a, 1.3b 1.3c
I-V :

. 1.3b
.
= 2-5 Schottky
0.42 - 0.5 eV. H. L. Mosbacker et al

1.3
I-V :
[16].
(a) .
(b) , .
(c) , .

11

Au/ZnO

(
) , .
,
. H. L. Mosbacker et al

OH- ( XPS)


(hopping transport via deep levels).

1.3 I-V C-V Schottky Au ZnO

Guodong Yuan, Zhizhen Ye, Liping Zhu, Jingyun Huang, Qing
Qian, Binghui Zhao [17] Schottky
, ZnO,
u/ZnO/Al/Si. ZnO (300 nm) DC
magnetron sputtering
n- (Al/Si), Zn Ar/O2.
0002,
, .
Guodong Yuan et al Schottky
1.4:
Schottky (integrated schottky diode, ISD) Si3N4 Au
ZnO .

1.4
Schottky u, ZnO DC
magnetron sputtering n-Si:(a) , (b) (ISD) [17].
12

Au/ZnO

Schottky ( Si3N4)
lift-off.
- (I-V), ISD
I-V.
ISD -0.014 1 V
= 1.5
-0.056 1 V
= 1.9.
, -

.
(ISD)

ZnO. SIMS ISD
,
Si3N4. ,
Au/ZnO .

-V . 1.5

1.5
I-V Schottky ( 0.2 mm)
u/ZnO/Al/Si : () ISD () [17].
13

Au/ZnO

- (I-V)
Schottky . ISD
I-V (
) .
,
Schottky 0.586 eV, -13 V,

, -2 V.

ISD.
Guodong Yuan et al (1.5
1.9 ) 2.7
Schottky Au ZnO Fabricious et al [18],

.

sputtering Fabricious et al.
K. Akkilic, Y.S. Ocak, T. Kilicoglu, A. Toprak .S. Ocak et al. *7+
schottky ZnO 200 nm,
300 C 45 ,
. n
1-10 cm DC sputtering
.
schottky

1.6
Schottky Au/ZnO n-Si [7].

14

Au/ZnO

. ,
1.6, I-V
1.7.

( ) 50 (
11 580). ( ,
),
-, *19+:
=

(1.1)

= 2

(1.2)

IS , o
Schottky, V
, Rs , k
Boltzmann .
Richardson ** ZnO **= 36 A/cm22 [20],
Schottky Schottky
.

1.7
log-V Schottky Au/ZnO/n-Si/Au ZnO
[7]. ZnO DC magnetron sputtering.

15

Au/ZnO

1.7 (log I)
(V), (298 )
.

logI-V ( V < 0,5 V) (1.1)

(2.66 2.67).
Schottky (1.2)
0.776 eV ,
0.826 eV. K. Akkilic et al.
logI-V, ,
Rs, k,
(139 k 144 k).
Dhananjaya et al. *21+ Schottky
ZnO - (I-V)
278 K 358 K. ZnO
300 C DC magnetron
sputtering, Zn Ar/O2.

1.8
- (logI-V) Schottky Au/ZnO
278 K 358 K ( : 2.4010-4 cm2) [21].

16

Au/ZnO

.
1.8 (log I)
(V),
(278 358 ).
2
-1 V 1 V.

logI-V ( V < 0,5 V) 2.



.
Dhananjaya et al.
logI-logV
1.9.
,
. 0.5 V (
1.9). ,
,

1.9
- (logI-logV)
Schottky Au-ZnO.
[21].

17

Au/ZnO

(space charge limited current, SCLC).

O SCLC
, .
.
(grain
boundaries) .
- C-V
(1 kHz 10 kHz), 50 mV AC
1.10.
,
AC .

, .
C-V
Schottky .
1/C2 V -1 V 1 V,
.
1.05 eV,
1.02 eV -V.

1.10
- C-2-V Schottky Au/ZnO. ZnO
DC magnetron sputtering [21].

18

Au/ZnO

. Lajn et al. [22] schottky Au, Ag,

Pb Pt ZnO ( 1 m)
(heteroepitaxial pulsed-laser) 710 C
. sputtering
4104 4.9103 cm2. XPS

-,
Schottky.
logI-V ( 1.11)
.

1.1 1.2.
Schottky 1.25
1.59 0.66 eV 0.84 eV, . Au/ZnO
= 1.36 b = 0.96 eV. ,
Schottky, b
Schottky-Mott. . Lajn et al.
b

1.11
logI-V Schottky Au, Ag, Pb Pt ZnO
( 1m) / ZnO/Al/.
[22].

19

Au/ZnO

b. -
b 0.96 eV 1.34 eV, .
S. Aydogan et al. *23+ Schottky

1mm) ZnO ( 0.33 m),

n-Si.

0.05M Zn(ClO4)2, 0.1M LiClO4

dimethylsulfoxide (DMSO).
Au/(1%Sb) 420 0C 3min N2
ZnO. H Au/ZnO/n-Si/Au (1%Sb)
1.12. ,
, b Rs
Au/ZnO I-V .

C-V

(1kHz -100kHz).
logI-V 1.13
310
0.8 V. S. Aydogan et al.

logI-V 1.21.

1.12
Schottky Au/ZnO/n-Si/Au (1%Sb)
ZnO [23].

20

Au/ZnO

1.13
logI-V Schottky Au/ZnO ( 1mm) n-Si.
ZnO [23].

.
logI-V 1.13 ( 1.2) 0.59 eV.
logI-V
, ,
1700 .
(12)
, .. b 1.21
1.53 0.55 eV 0.59 eV, .
S. Aydogan et al
,
logI-logV 1.14.

logI-logV:
(
.

-

21

Au/ZnO

1.14
- Schottky
Au/ZnO/n-Si/AuSb [23].

.
exp(cV).

. ( )
(power law) V4.2,
(SCLC)
ZnO.
SCLC
,
. SCLC
2 *24+.
CV 1 kHz , 5 kHz, 10 kHz, 100kHz
1.15.

.


. C-2V ( 1.16)
Schottky 0.72 eV.
22

Au/ZnO

1.15
- C-V Schottky Au/ZnO
[23].

C-V
I-V.
,
.

1.16
C-2-V Schottky Au/ZnO [23].

23

Au/ZnO

1.17
SEM ZnO SiC [25].

1.4 I-V C-V Schottky Au Zn

I. Hussain et al. *25+ Schottky
(nanorod arrays) ZnO
I-V, C-V C-f. ZnO
n-SiC
.

schottky 1.5mm ( 1.17).
1.18() I-V
Au/ZnO(NR). I. Hussain et al.
2.4 1.0 eV
.


.

logI-logV 1.18().
:
I
. II

24

Au/ZnO

1.18
() I-V Au/n-ZnO(NR)
[25].
() -V Au/n-ZnO(NR) [25].

~exp(cV).

- .
III (power law)

V2.4,

(SCLC).

ZnO.
, Lao et al *26+
, /,

( FET).
0.5 1.5 V,
10 V.
~3 on-off 2000.
I-V ( 1.19).

25

Au/ZnO

1.19
I-V Schottky ZnO Au ,
[26].

26

Au/ZnO

[1] F.S. Hickernell, Proc. IEEE 64,631 (1976).

[2] A.R. Hutson, Phys. Rev. Lett. 4, 505 (1960).
[3] N. H. Nickel, E. Terukov (eds.), Zinc Oxide- A Material for Micro And
Optoelectronic Applications (Springer, Dordrecht, 2005).
[4] K. Keis, E. Magnusson, H. Lindstorm, S.E. Lindquist and A. Hagfelt, Sol. Energ.
Mater. Sol. Cells, 2003, 73, 31.
[5] G. Adamopoulos, A. Bashir, P. H. Wookenberg, D. D. C. Bradley and T. D.
Anthopoulos, Appl. Phys. Lett. 95 (2009) 133507.
[6] T. Minami, Semicond. Sci. Technol. 20 (2005) 35.
[7] K. Akkilic, Y.S. Ocak, T. Kilicoglu, A. Toprak, J. NanoElectron. Phys. 4,
01012(2012).
[8] J.F. Wager, Science 300, 1245 (2003).
[9] Look D. C. 2001 Mater. Sci. Eng: B 80 383.
[10] W. Gopel, L. J. Brillson and C.F. Brucker, J. Vac. Sci. Technol. 17, 894 (1980).
[11] H von Wenckstern, Kaidashev E.M, Lorenz M, Hochmuth H, Biehne G, Lenzner
J, Gottschalch V, Pickenhain R and Grundmann M 2004 Appl. Phys. Lett. 84 79.
[12] S. Kim, B.S. Kang, F. Ren, K. Ip, Y.W. Heo, D.P. Norton, S.J. Pearton, Appl. Phys.
Lett. 84 (2004) 1698.
[13] W. M. Kim, Y. H. Kim, J. S. Kim, J. Jeong, Y-J Baik, J-K Park, K. S. Lee and
T-Y seing 2010 J. Appl. Phys. 43 365406.
[14] L-Y Chen, W-H Chen, J-J Wang and Franklin C-N Hong 2004 Appl. Phys.
Lett. 85 23.
[15] B.J. Coppa, R.F. Davis, and R.J. Nemanich, Appl. Phys. Let. 82. 400 (2003).
[16] H.L. Mosbacker, Y.M. Strzhemechny, B.D White, P.E. Smith, D.C Look, Appl.
Phys.Lett. 87, 012102 (2005).
[17] Guodong Yuan, Zhizhen Ye, Liping Zhu, Jingyun Huang, Qing Qian, Binghui
Zhao, J. Crystal Growth 268 (2004) 169173.
[18] H. Fabricius, T. Skettrup, P. Bisgaard, Appl. Opt. 25 (1986) 2764.
[19] E. H. Rhoderick, R. H. Williams, Metal-Semiconductor contacts, Second ed.
(Clarendon Press Oxford: 1988).
[20] O. Madelung, M. Schulz, H. Weiss, Semimagnetic Semiconductors, LandoltBornstein, New Series, Group III, vol. 17, Part B (Springer: Berlin 1982).
[21] Dhananjay, J. Nagaraju, S.B. Krupanidhi, Physica B 391 (2007) 344-349.
[22] A. Lajn, H.V. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner,
H. Hockmuth, M. Lorenz, and M. Grundmann, J. Vac. Sci. Technol. B 27(3) 2009.
[23] S. Aydogan, K. Cinar, H. Asil, C. Coscun, A. Turut, J. All. And Comp. 476 (2009)
913918.

27

Au/ZnO

[24] P. Syed Abthagr, R. Saraswath, J. Appl. Polymer Sci. 81 (2001) 21272135.

[25] I. Hussain, M. Y. Soomro, N. Bano, O. Nur, and M. Willander, J. Appl. Phys. 112,
064506 (2012).
[26] C. S. Lao, J. Liu, P. X. Gao, L. Y. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang
Nano Lett 2, 263 (2006).

28

-/ SCHOTTKY

2
-
SCHOTTKY

.

Schottky.
F. Braun 1874 *1+. -

(point contact).

.
Schottky
W.Schottky Mott *2,3+
,
Fermi .
, Fermi
.

.

, s , m.

2.1 - n
2.1
n . ( 2.1)
23

-/ SCHOTTKY

2.1
n () ()
( -) [4].

Fermi Fm Fermi EFs

s
m. s m

Fermi ( ).
( 2.1),
(
) Fermi
.


W,
Vbi. p-n,

Fermi Fm
.

Schottky
( ) :

24

-/ SCHOTTKY

(2.1)

s
c
.

, Vbi :
=

(2.2)

2.2 - p
2.2
p ( 2.2) .
s m.
( 2.2),
, ,
Fermi
.
,
W ,

2.2
p () ()
( -) [5].

25

-/ SCHOTTKY

. Schottky Vbi
:

(2.3)

(2.4)

2.3 -
2.3
n (m > s) , .
,
sm
ms
( 2.3).

V ( ),

2.3
- n (), ()
() [6].
26

-/ SCHOTTKY

Vbi V,
b .

, sm ( )
( 2.3).
ms ( )

Schottky b.
.
V

),

Vbi + V.
sm
ms
. , ,
( ).

. - p
m < s.

2.4 Schottky

Poisson
:
2

=
+
2

2.5

s = 0r , d
, q n(x), p(x)
27

-/ SCHOTTKY

x .
,
, :
2

2.6

, (
)
:

= 1

(2.7)

2
=

(2.8)

(2.9)

V .
m x = 0
:

2
= 2

(2.10)

,
2.4.
To Qd C
:

= =

(2.11)
28

-/ SCHOTTKY

=
=

2.12

*7+:

=
2

2.13

2.4

) , ) ) .

29

-/ SCHOTTKY

2.5
2.5
() n
Schottky.
, ,
- *7,8+.
2.5 (thermionic
emission, TE).
q(Vbi V) Schottky
.
(
),
Schottky
2.5.
Fermi
,
, .
(field emission tunneling, FE).



.
(thermionic field emission tunneling,TF).
Schottky
.

( 2.5).
Schottky b

W.

30

-/ SCHOTTKY

Schottky, Schottky n,
Eg / 2,
p. p
n

p-n.

Schottky Si GaAs
( = 1).
-
.

2.5

schottky - n.()
, () , () - ()
[9].

31

-/ SCHOTTKY

() ( )

Schottky
(.. Si, Nd < 1017 cm-3)
250 .


.

.
(- )

. (Ge, GaAs, Si)
.
, ,
:

(2.14)

J Js
.
(2.14)
.
Js.
:

= 2

(2.15)
32

-/ SCHOTTKY

* Richardson 110 /cm2K2 c-Si

32 /cm2K2 Zn.
- :

(2.16)

c
, e Em
.
Schottky
, ,
1.
,
.

)

(FE) (TFE).
FE TFE
.

.
:

1
0

(2.17)

Jt 0
*10+:

33

-/ SCHOTTKY

0 = 00

00

(2.18)

00
:

00 =

(2.19)

s , m*
h Planck.
Jt (2.17)
,
.

) -
Schottky ,

-
(n) (p)
np=ni2, ni .

. ,

.
-.
.
,
-.
*11+.
,
np > ni2.
34

-/ SCHOTTKY

( 2.5). ,
np < ni2
.
( )
Jr

1
2

(2.20)

JR :
=

(2.21)

0 .
(2.15) (2.21) :

(2.22)

-

b

W.

)
Schottky
. ,
35

-/ SCHOTTKY

n
(b > Eg/2). ,

p. Schottky ,


. , (
)
:

(2.23)

Dp, Lp .
d
Dp/Lp b
[9].

,

= 0 exp

(V > 2kT/q):

(2.24)

J0 .

. = 1
Schottky
-.
1 2 . = 2
-
2,
.
36

-/ SCHOTTKY

2.6 -

.
- -
I-V ( 2.6)
[12]:
1) m
s n (m < s). p

(m > s).
(Vbi < 0)
.
Vbi
.
2) .

W (Nd)-1/2
(2.9).
( 2.6)
.

.
3)
-.
(sandblasting) .
,

.

37

-/ SCHOTTKY

2.6
() n-.

. () V Schottky , [13].

[1] K.F. Braun, on the current conduction through metal sulphides (in German),
38

-/ SCHOTTKY

Ann. Phys. Chem., 153(1874)556.

[2] W. Schottky, Z. Physic, 113:367, 1939.
[3] N. F. Mott, Proc. Soc. (London), 171:27, 1939.
[4] Singh, Semiconductor Devices: Basic Principles (Figure 6.2), Wiley 2002.
[5] Singh, Semiconductor Devices: Basic Principles (Figure 6.3), Wiley 2002.
[6] S. M. Sze, Semiconductor devices: Physics and Technology (2nd edition),
(Figure 5.2), Wiley 2002.
[7] E. H. Rhoderick, The conduction mechanisms in schottky diodes, Proc. 1972
European Solid State Device Research Conf., 1973, p.208.
[8] K. Shenai and R. W. Dutton, Current transport mechanisms in atomically abrupt
metal-semiconductor interfaces, IEEE Trans.Electron Devices ED-35, 468 (1998).
[9] M. S. Tyagi, Introduction to semiconductor materials and devices (Figure 10.15),
Wiley 1991.
[10] F. A. Pandovani and R.Stratton, Field and thermionic field emission in schottky
barriers, Solid-State Electron, 9(1966)695-707.
*11+ . ,
, , , (2007).
[12] . . Rhoderick, Metal semiconductor contacts, IEEE Proc. 129 (part I), 1(1982).
[13] Singh, Semiconductor Devices: Basic Principles (Figure 6.8), Wiley 2002.

39

SCHOTTKY Au/ZnO

3
SCHOTTKY Au/ZnO

3.1

Schottky,
, nO:H
.
nO:H dc-magnetron sputtering
n . nO
-
.
(0, 5, 10, 20, 40 sccm).
Schottky Au/ZnO:H/c-Si/l
: Schottky
, Au , lift-off
Al
,
Schottky.

(....).

40

SCHOTTKY Au/ZnO

3.2 ZnO DC-Magnetron Sputtering

Sputtering

, ,
.. Si.
.
. sputtering,

.

.

. 3.1
sputtering.
sputtering magnetron-sputtering

.

3.1
dc-magnetron-sputtering [1].
41

SCHOTTKY Au/ZnO

.
.
DC dc-magnetron sputtering. DC

RF
.
sputtering
:
A)
.
B)
:
1) Ar
2)
3)
4)
5)
C)
.
ZnO:H dc-magnetronsputtering

(clean

room)

....

sputtering Nordiko,
, 3.2.
) DC-, )
Sputtering )
.
.
()
.

42

SCHOTTKY Au/ZnO

3.2
Sputtering Nordico a) o DC-, )
) .

(Shutter),
.
needle,
throttle
Sputtering.
ZnO:H
n , n-Si
Schottky.
(substrate holder) (
n-Si) sputtering,
2 , 2 1

. .
ZnO 99.95%
6 0.5 mm 101.6 0.5 mm
8.5 cm
210-6 mbar. 100 0C.
/
.
dc 100 W
20 sccm, : 0, 5, 10, 20, 40 sccm.
28 45
43

SCHOTTKY Au/ZnO

ZnO:H.
3.1.

-
Ar
H

ZnO
99.95%
6 0.5 mm
101.6 0.5 mm
100
~2 10-6 mbar
100 Watt
28-45 min
8.5 cm
20 sccm
0-40sccm
Corning glass, c- Si
10 min P = 100 Watt

3.1
ZnO.

3.3 - (Au)- Lift-off- (Al)

( UV-)
Lift-off

.
, ,
(photoresist)
- .
,
(developer)

.

44

SCHOTTKY Au/ZnO

.
( )
lift off,
,
schottky .

.

3.3
T.H.H.Y. ZnO:H
, , 2
1 .

a) (spin on
coating)
,
( 3.3).
ZnO:H
(Microposit, S1818S16 hotoresist)
2800 rpm 20 sec.
photoresist
.
(softbake) photoresist 1 40
115 C .
softbake 25%
photoresist.

45

SCHOTTKY Au/ZnO

3.3
, lift off.

) UV
photoresist UV
( 3.4) Karl
Suss ,
( 3.3).
,
Schottky

. , 350 W

( 3.3). UV
photoresist.

46

SCHOTTKY Au/ZnO

3.4
....

) (developing)
UV photoresist
.
NaOH (Microposit 351 Developer)
30-40 .
, photoresist
3.3. (hardbake) 115 C
5 .
hardbake postbake
photoresist . O


photoresist
lift off.

47

SCHOTTKY Au/ZnO

) Au
, Au
150 nm
Schottky ( 3.3).

(Vacuum Coater) lcatel ( 3.5).
3 : )
, 3.5
: ,
,
() 3.6.
, ,
( 3.6). B) ( 3.5)
) ( 3.5).


.
Penning.
150 mg .
10-6 Torr,
( 50-55 2 ).

3.5
Alcatel ) , )
) .
48

SCHOTTKY Au/ZnO

3.6
) .
) .

-
.
ZnO:H
150 nm ( Talystep
Alpha Step).
) lift - off - Au/photoresist

Au
photoresist. 1:30 2
. H
ZnO:H
( 3.3.) schottky Au/ZnO.
) Al

Au/ZnO:H/c-Si,
ZnO:H .


Polaron, 3.7.
49

SCHOTTKY Au/ZnO

3.7
Polaron Al
Au/ZnO:H/c-Si.

Al 210-6 Torr
38-40 40 mgr Al
Al 200 nm
.

3.4 schottky Au/ZnO

3.4.1
schottky
ZnO:H n ( :
Au/ZnO:H/c-Si/l),

- (I-V)

(C-V) .
,
Schottky b, .
( 300 420 ),

.

50

SCHOTTKY Au/ZnO

3.8
() /dc- HP 4140B Hewlett Packard.
() .

3.4.2 -V
I-V HP 4140B
Hewlett Packard dc-
( 3.8).
110-12 A (1 pA) 10-2 0.5%. H dc-
0 100V 0.1Volt.
0 10V 0.01V.
( 3.9)
S4660 ( 3.9)

3.9
() .
() S4660 DLTS DL4600 BIO-RAD.
51

SCHOTTKY Au/ZnO

DLTS DL 4600 Bio-Rad. I-V

-5 5 V 0.1V
300 420 . O 10 A ,
. To
3.8.
3.4.3 C-V
- .
,
W ,
(2.12). -
(C-V) 1Mhz
Boonton ( 3.10). DLTS DL4600
( 3.9) Bio-Rad ,
R. ,
(~300), : Vbi,
Schottky b
Nd Schottky. 1/C2V
Vbi

d .

3.10
() DLTS DL4600 Bio-Rad.
() H C-V.
52

SCHOTTKY Au/ZnO

[1] http://sindhu.ece.iisc.ernet.in/nanofab/twiki/pub/Main/TuesdayMorningTechnic
alPresentations/Sabiha_Sputter_tool.pdf
[2] http://www.nano.iisc.ernet.in/RF%20sputtering%20manual_2010.pdf
[3] http://www.ee.washington.edu/research/microtech/cam/PROCESSES/PDF%20FIL
ES/Photolithography.pdf

53

Schottky Au/ZnO:H/c-Si/Al.
- (J-V)

: n, Schottky b,
Rs .
. , ,
J-V 200 K
420 . ,
(C-V)
.

.
Schottky ZnO , ,
.

4.1 -
4.1.1 Schottky Au/ZnO: H/c-Si/Al
(300 )
4.1 4.1

-, , ,
.. 2
, 3.2.
4.1, (
) 0.6 V, .

54

()

()

4.1
- Schottky Au/ZnO:H
.. 2 ) )
.

55

, ( 4.1),
1-1.5 V
. ,
.. ( *2+ ) 33 %,
1.5-2 .
, .

(rectification factor),
( |JF/JR| )
. |V| = 0.7 V
4.1. ,
,
*2] = 33 % 5 ,
.
*1,2+.
Akilic et al. *1+ 11 Schottky
Au/ZnO. ZnO dc-magnetron-sputtering
n-Si, . , Aydogan et
al. *2+

3104 |V| = 0.8 V, Schottky

Au/nO/n-Si, nO
.

2 (sccm)

[H2] (vol. %)

Js (/cm2)

|JF/JR|

~4.010-7
-7

5
10
20
40

20
33
50
67

~8.010

-8

~5.010

-6

~2.010

-6

~1.310

b (eV)

~2.0103

2.33-2.37

0.77-0.78

~1.410

2.01-2.06

0.74-0.77

~3.810

1.39-1.43

0.81-0.83

~3.910

1.92-1.97

0.71-0.73

~1.710

2.00-2.04

0.72-0.75

4.1
Schottky Au/ZnO:H
[2].

56

,

- (logJF VF).
,
*3+:

(4.1)

s , Rs , k Boltzmann, T
, q V
. s :

= 2

(4.2)

, * = 32 /cm2K2 Richardson
*4+ b Schottky. ,

b :

4.3

, (4.1)
log JF VF, :

(4.4)

4.2 logJF VF
Schottky Au/ZnO:H/c-Si/Al *2] = 33 %,

57

4.2
- Schottky
Au/ZnO:H 33 % [2]
.

, .
Js, b
4.1. b
*2+ 4.3.
, 2.35
1.41 *2+ 0 33 %. *2]
2.
2,
-.
,
ZnO. ,
- .
2.3,
ZnO (=2.35),
-
58

4.3
n b [2].

(recombination-tunneling) *5,6+. ,
ZnO *2]=33 %. (n = 1.41)

.
*7,8+ Schottky.
Schottky, , ,

, (4.3) .
, b
, (~1 eV)
Schottky-Mott.
Schottky-Mott b
m s .
ZnO
4.1 eV *9+ Au 5.1 eV *3+,
59

1.0 eV.
, , b
1 eV .
4.1
, 0.6 V,
. Rs.
50 4240 Cheung & Cheung *10+
*1,2+.
:

=
+
()

(4.5)

,
,
log JF VF.

, JV
. 4.4 4.4
- (logJlogV),
*2+, . log JF logVF
4.4 : ,
(I~exp(cV)), c , 0.4 V
( ).

. , m,
(I~Vm). m 2
,
(Space Charge Limited
Current, SCLC).

60

()

()
4.4
- Schottky Au/ZnO:H
[2] ) ) .

61

*2] = 33 % m = 2.91,
SCLC, (trap assisted SCLC)
ZnO *5,11+. 4.5
JV *2] = 33 %
m = 2.91 .
,
Schottky s (4.2).

, 4.1
4.4.
*12+: ) Schottky
(image force barrier lowering),
(interfacial oxide layer)
(interface states) , )
, )

4.5
- Schottky
Au/ZnO:H [2] = 33 %.
62

- )
() .
-
, logJR logVR
m ~ 0.5 *13+.
logJR logVR 4.4 m > 0.7
.
, ZnO,
.
Schottky (b)
.
Schottky ( )

4.6
logJR (VR)1/4 Schottky Au/ZnO:H/c-Si/Al
[2].

63

,
logJR VR1/4 *12+,
, 4.6.

4.1.2 Schottky
Au/ZnO: H/c-Si/Al *2]

Schottky Au/ZnO:H *2+.
4.7, 4.8, 4.9, 4.10 4.11
- (logJV) *2] = 0, 20, 33, 50 67 %,
, .
.

.
*2] = 0 % *2] = 33 %
.
, 4.1.1,
: i) |JF/JR|
|V| = 0.7 V, ii) ( 4.4)
JS , iii)
Schottky b (4.3) iv)
RS (4.5).
4.2
300 420 .
,
,
JR
JF .

64

()

()
4.7
- 300-420
Schottky Au/ZnO:H [2] = 0 % ) ) .

65

()

()
4.8
- 300-420
Schottky Au/ZnO:H [2] = 20 % ) ) .

66

()

()

4.9
- 300-420
Schottky Au/ZnO:H [2] = 33 % ) ) .

67

()

()
4.10
- 300-420
Schottky Au/ZnO:H [2] = 50 % ) ) .

68

()

()
4.11
- 300-420
Schottky Au/ZnO:H [2] = 67 % ) ) .
69

[H2] = 0 %

T (K)

Js (A/cm2)

|JF/JR|

300

~4.010-7

330

-7

360
390

[H2] = 20 %

-6

~1.710

-6

~2.0103

2.33-2.37

0.76-0.78

~477-700

~6.110

2.20-2.22

~5.510

2.06-2.10

0.82-0.84
0.840.84
0.88-0.92

~637-955

~4.110

1.95-1.97

0.94-0.98

~127-318

1.73-1.75

1.04-1.08

~95-382

~414-573

~3.210

300

~8.010-7

~1.4 103

2.01-2.06

0.74-0.77

~845-1365

330

-6

1.88-1.92

0.78-0.80

~715-975

~8.810

1.75-1.77

0.83-0.87

~650-1105

~8.210

1.63-1.65

0.89-0.93

~455-910

1.54-1.58

0.95-0.97

~195-585

1.39-1.43

0.81-0.83

~50-249

360

300

[H2] = 67 %

~1.210

Rs ()

~1.910

420

[H2] = 50 %

-6

b (eV)

420

390

[H2] = 33 %

~8.010

~3.110

-6

~4.610

-6

~8.010

-5

~1.610

-8

~5.010

-8

~8.8 10

~6.9 10
~3.8 10

330

~9.610

~3.2 10

1.32-1.34

0.88-0.90

~99-398

360

~1.410-7

~2.5 104

1.21-1.23

0.95-0.97

~199-448

390

~3.310-7

~1.3 104

1.18-1.22

1.02-1.04

~149-348

420

~5.510-7

~9.2103

1.16-1.18

1.06-1.10

~99-398

300

~2.010-6

~3.9 103

1.92-1.97

0.71-0.73

~2120-4240

330

-6

~6.710

~4.9 10

1.87-1.89

0.76-0.78

~1767-4947

360

~1.010-5

~3.6 103

1.72-1.76

0.82-0.84

~2473-4594

390

~1.510-5

~2.7 103

1.60-1.63

0.87-0.91

~1413-3534

420

~2.010-5

~1.6 103

1.54-1.56

0.93-0.97

~1060-2473

300
330

~1.310-6
~3.310-6

~1.7 103
~1.9 103

2.18-2.22
2.01-2.03

0.72-0.75
0.78-0.90

~195-520
~130-390

360

~4.510-6

~1.4 103

1.87-1.89

0.83-0.87

~325-585

390

~9.910-6

~1.2 103

1.73-1.75

0.88-0.92

~260-715

420

~2.210-5

~1.0 103

1.66-1.70

0.94-0.96

~65-390

4.2
Schottky Au/ZnO:H
[2] 300-420 .

70

4.12
n Schottky
Au/ZnO:H [2].

JS
Schottky b .
o b
(1 eV), *8,14+.
RS

. RS 50
4947 .

.
Au/ZnO ZnO *8,14+. 4.12
.
.
, 4.1.1, :
) nO ([H2] = 0 %),
300-330 , ~ 2.2-2.3 71

. 360 ,
1.7 2.0, -
.
) *H2] = 20 % *H2] = 50 %
~2 300 ~1.54-1.58 420 . ,
-

. *H2] = 67 % ,
.
) *H2] = 33 %, 4.1.1
,
( ~1.16-1.43)
420 ~1.16-1.18.
1.5 1.8
(tunnelling),
(
) . ,
.
(=1)
b.
,

,
. 4.13, 4.14, 4.15,
4.16 4.17 - (logJlogV)

*2] = 0,

20, 33, 50 67 %,

, .

72

()

()
4.13
- 300-420
Schottky Au/ZnO:H [2] = 0 % ) ) .

73

()

()
4.14
- 300-420
Schottky Au/ZnO:H [2]=20 % ) ) .

74

()

()
4.15
- 300-420
Schottky Au/ZnO:H [2]=33 % ) ) .

75

()

()
4.16
- 300-420
Schottky Au/ZnO:H [2]= 50 % ) ) .

76

()

()
4.17
- 300-420
Schottky Au/ZnO:H [2]=67 % ) ) .

77

()
300
330
360
390
420
4.3

*2] =
0 vol. %
2.00
2.71
2.42
2.52
2.74

*2] =
20 vol. %
1.60
1.96
1.90
1.84
1.82

*2] =
33 vol . %
2.91
2.75
2.61
2.53
2.36

*2] =
50 vol. %
2.04
2.05
1.99
2.24
1.98

*2] =
67 vol. %
2.13
2.06
1.90
2.10
2.15

m log JF logVF [2]

300-420 .

: (~exp(cV))
~0.4 V.
.
, m,
(~Vm).
(fitted line)
4.3. m


. ,
4.1.1.

()
300
330
360
390
420
4.4

*2] =
0 vol. %

*2] =
20 vol. %

*2] =
33 vol. %

*2] =
50 vol. %

*2] =
67 vol. %

1.4
0.92
0.91
0.92
1.04

1.16
1.15
1.14
1.13
1.10

1.62
2.15
2.30
2.48
2.34

0.72
1.00
1.08
1.07
1.03

1.32
1.25
1.22
1.18
1.27

m log JR logVR [2]

300-420 .

78

m
300-420 .
4.4. m
1 2.5 .
,
4.1.1.
logJR(VR)1/4
, . ,
Schottky b ( )
. 4.18
logJR (VR)1/4 *2] = 33 % 300-420 .

4.18
logJR (VR)1/4 Schottky Au/ZnO:H [2] = 33 %
300 420 .

79

4.2 -
4.19 - (C-V)
Au/ZnO:H/c-Si/Al *2+.
Nd Vbi
( ), , 1/C2V,
( 4.20), :
1
2
= 2
2

(4.6)

s = 9.00 ZnO [4], , d

. Schottky :
, = +

(4.7)

c = 4.8 1018 cm-3 *11+

ZnO 300 .

4.19
- Schottky Au/ZnO:H
[2].
80

4.20
1/C2V Schottky Au/ZnO:H
[2].
4.21 1/C2V
*2] = 50 %,
Vbi. Vbi, d,
Schottky b 4.5.
Nd 10141015 cm-3,
*2+. , *15+ H2
ZnO. T Schottky b
0.84 1.27 eV, ,
J-V,
(1 eV).
,
Schottky [2].

81

4.21
1/C2V Schottky Au/ZnO: [2] =50 %.

[H2] (vol. %)

Vbi (V)

ND (cm-3)

b (eV)
(eV)
1.05-1.07

~2.881014
~5.541014
0.90-0.93
14
14
10
~7.2410
1.07-1.10
1014 15
~1.1510
0.82-0.85
1014 15
~1.6310
1.26-1.29
1015
4.5
1015
Schottky Au/ZnO:H

0
20
33
50
67

0.80-0.82
0.67-0.69
0.85-0.87
0.61-0.64
1.05-1.09

[2].

82

[1] K. Akkilic, Y.S. Ocak, T. Kilicoglu, A. Toprak, J. Nano-Electron. Phys. 4, 01012

(2012).
[2] S. Aydogan, K. Cinar, H. Asil, C. Coscun, A. Turut, J. All. And Comp.
476 (2009) 913918.
[3] E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, Second d.
(Clarendon Press: Oxford: 1988).
[4] S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p.849.
[5] S. M. Faraz, M. Willander, and Q. Wahab, Mater. Sci. Eng. 34, 012006
(2012).
[6] Klasson P, Nur O and Willander M 2008 Nanotechnology 19 475202.
[7] H. von Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth, M. Lorenz,
and M. Grundmann, Appl. Phys. Lett. 88, 092102 (2006).
[8] A. Lajn, H.V. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner,
H. Hockmuth, M. Lorenz, and M. Grundmann, J. Vac. Sci. Technol. B 27 (3) 2009.
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064506 (2012).
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Applications, Plenum Press, New York, 1984.
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York, 1969), p. 90.
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83

5

5.1

Schottky

Au

ZnO : Au/ZnO:H/c-Si(n)/Al.
I-V C-V,
.
-V (~300 ) :

3 .
*2] = 33 % 5 .
1.41 2.35
*2]=33 %.

*2+ 0 33 %, *2] > 33 %.
*2] = 33 % ( = 1.41)
( logIF VF)
, 1.
Schottky.
, -
( 2) - ( > 2.3).
logIF VF ( V > 0.7 V),
SCLC ,
logIF logVF.
,
,
Schottky, .
To Schottky 0.73 0.82 eV,
Rs (~120 ).
(*2]=33 %),
84

Schottky (~0.82 eV),

(1 eV).

-V 300420 :
( )
,
.

.
*2+ 300 . ,
*2] = 33 % ( 1.16-1.18 420
).
logIF VF.
V>0.7 V ( logIF VF),

(SCLC) . ,
Rs, ( 30 ).
JS Schottky b
. b
1 eV
.

C-V :
d
*2+,
ZnO.
To b -V
Schottky-Mott (1 eV).

85

5.2
, -
-
()
, :
i) - (C-V-f)
.
ii) DLTS -
.

86