/TechnicalInformation

IGBT-
IGBT-Module

FF450R33TE3

/PreliminaryData

VCES = 3300V
IC nom = 450A / ICRM = 900A

UPS

TypicalApplications
Mediumvoltageconverters
Motordrives
Tractiondrives
UPSsystems
Windturbines

VCEsat

Tvjop=150C
VCEsat

ElectricalFeatures
HighDCstability
Highshort-circuitcapability
Lowswitchinglosses
LowVCEsat
Unbeatablerobustness
Tvjop=150C
VCEsatwithpositivetemperaturecoefficient

AlSiC

MechanicalFeatures
AlSiC base plate for increased thermal cycling
capability
PackagewithCTI>600
Isolatedbaseplate

CTI>600

ModuleLabelCode
BarcodeCode128

DMX-Code

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
1

ContentoftheCode

Digit

ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)

1-5
6-11
12-19
20-21
22-23

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

IGBT,/IGBT,Inverter

/MaximumRatedValues

Collector-emittervoltage

Tvj = -40C
Tvj = 150C

VCES

3300
3300

 V

ContinuousDCcollectorcurrent

TC = 100C, Tvj max = 150C

IC nom 

450

 A

Repetitivepeakcollectorcurrent

tP = 1 ms

ICRM

900

 A

Totalpowerdissipation

TC = 25C, Tvj max = 150C

Ptot

4,45

 kW

VGES

+/-20

 V

Gate-emitterpeakvoltage

/CharacteristicValues

Collector-emittersaturationvoltage

min.
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V

Tvj = 25C
Tvj = 125C
Tvj = 150C

VCE sat

typ.

max.

2,55
3,00
3,15

3,10
3,45

V
V
V

5,80

6,40

Gatethresholdvoltage

IC = 12,0 mA, VCE = VGE, Tvj = 25C

VGEth

Gatecharge

VGE = -15 V ... +15 V, VCE = 1800V

QG

12,5

Internalgateresistor

Tvj = 25C

RGint

1,3

Inputcapacitance

f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V

Cies

84,0

nF

Reversetransfercapacitance

f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V

Cres

2,00

nF

-
Collector-emittercut-offcurrent

VCE = 3300 V, VGE = 0 V, Tvj = 25C

ICES

5,0

mA

-
Gate-emitterleakagecurrent

VCE = 0 V, VGE = 20 V, Tvj = 25C

IGES

400

nA

()
Turn-ondelaytime,inductiveload

IC = 450 A, VCE = 1800 V

VGE = 15 V
RGon = 12

Tvj = 25C
Tvj = 125C
Tvj = 150C

()
Risetime,inductiveload

IC = 450 A, VCE = 1800 V

VGE = 15 V
RGon = 12

Tvj = 25C
Tvj = 125C
Tvj = 150C

()
Turn-offdelaytime,inductiveload

IC = 450 A, VCE = 1800 V

VGE = 15 V
RGoff = 3,3

Tvj = 25C
Tvj = 125C
Tvj = 150C

()
Falltime,inductiveload

IC = 450 A, VCE = 1800 V

VGE = 15 V
RGoff = 3,3

Tvj = 25C
Tvj = 125C
Tvj = 150C

()
Turn-onenergylossperpulse

IC = 450 A, VCE = 1800 V, LS = 85 nH

Tvj = 25C
VGE = 15 V, di/dt = 3650 A/s (Tvj = 150C) Tvj = 125C
RGon = 0,7
Tvj = 150C

(
Turn-offenergylossperpulse

5,20

0,68
0,66
0,66

s
s
s

0,35
0,46
0,46

s
s
s

1,70
1,85
1,90

s
s
s

0,13
0,24
0,27

s
s
s

Eon

500
765
845

mJ
mJ
mJ

IC = 450 A, VCE = 1800 V, LS = 85 nH

Tvj = 25C
VGE = 15 V, du/dt = 2850 V/s (Tvj = 150C) Tvj = 125C
RGoff = 3,3
Tvj = 150C

Eoff

415
600
660

mJ
mJ
mJ

SCdata

VGE 15 V, VCC = 1800 V

VCEmax = VCES -LsCE di/dt

ISC

1700

Thermalresistance,junctiontocase

IGBT/perIGBT

RthJC

Thermalresistance,casetoheatsink

IGBT/perIGBT
Paste=1W/(mK)/grease=1W/(mK)

RthCH

Temperatureunderswitchingconditions

tP 10 s, Tvj = 150C

td on

tr

td off

tf

Tvj op

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
2

28,4 K/kW
24,9
-40

K/kW
150

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

,/Diode,Inverter

/MaximumRatedValues

Repetitivepeakreversevoltage

Tvj = -40C
Tvj = 150C

ContinuousDCforwardcurrent

Repetitivepeakforwardcurrent

tP = 1 ms

I2t-
It-value

VR = 0 V, tP = 10 ms, Tvj = 125C

VR = 0 V, tP = 10 ms, Tvj = 150C

Maximumpowerdissipation

Tvj = 125C

Minimumturn-ontime

VRRM 

3300
3300

 V

IF

450

 A

IFRM

900

 A

It

63,5
59,5

PRQM 

900

 kW

ton min 

10,0

 s

/CharacteristicValues

min.

kAs
kAs

typ.

max.

VF

3,10
2,75
2,65

3,85
3,25

IF = 450 A, - diF/dt = 3650 A/s (Tvj=150C) Tvj = 25C

VR = 1800 V
Tvj = 125C
VGE = -15 V
Tvj = 150C

IRM

680
680
680

A
A
A

Recoveredcharge

IF = 450 A, - diF/dt = 3650 A/s (Tvj=150C) Tvj = 25C

VR = 1800 V
Tvj = 125C
VGE = -15 V
Tvj = 150C

Qr

230
445
525

C
C
C

Reverserecoveryenergy

IF = 450 A, - diF/dt = 3650 A/s (Tvj=150C) Tvj = 25C

VR = 1800 V
Tvj = 125C
VGE = -15 V
Tvj = 150C

Erec

220
490
595

mJ
mJ
mJ

Thermalresistance,junctiontocase

/perdiode

RthJC

Thermalresistance,casetoheatsink

/perdiode
Paste=1W/(mK)/grease=1W/(mK)

RthCH

Forwardvoltage

IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V

Tvj = 25C
Tvj = 125C
Tvj = 150C

Peakreverserecoverycurrent

Temperatureunderswitchingconditions

Tvj op

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
3

V
V
V

45,5 K/kW
25,0
-40

K/kW
150

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

/Module

Isolationtestvoltage

RMS, f = 50 Hz, t = 10 s

VISOL 

6,0

 kV

Partialdischargeextinctionvoltage

RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)

VISOL 

2,6

 kV

Materialofmodulebaseplate

AlSiC

Creepagedistance

/terminaltoheatsink
/terminaltoterminal

53,0

 mm

Clearance

/terminaltoheatsink
/terminaltoterminal

26,0

 mm

> 600

Comperativetrackingindex

CTI

min.
,
Strayinductancemodule
,-
Moduleleadresistance,terminals-chip

TC=25C,/perswitch

Storagetemperature

25

nH

RCC'+EE'

0,36

Tstg

-40

150

4,25

5,75

Nm

M6
ScrewM6-Mountingaccordingtovalidapplicationnote

Terminalconnectiontorque

M8
ScrewM8-Mountingaccordingtovalidapplicationnote
M3
ScrewM3-Mountingaccordingtovalidapplicationnote

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
4

max.

LsCE

Mountingtorqueformodulmounting

Weight

typ.

8,0

10

Nm

0,9

1,1

Nm

700

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

IGBT,)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V

IGBT,)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150C

900

900

750

750

600

600

IC [A]

IC [A]

Tvj = 25C
Tvj = 125C
Tvj = 150C

450

450

300

300

150

150

0,0

0,5

1,0

1,5

2,0

2,5 3,0
VCE [V]

3,5

4,0

4,5

5,0

IGBT,()
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V

VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V

0,0

0,5

1,0

1,5

2,0

2,5 3,0
VCE [V]

3,5

4,0

4,5

5,0

IGBT,)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=15V,RGon=0.7,RGoff=3.3,VCE=1800V

900

2500
Tvj = 25C
Tvj = 125C
Tvj = 150C

Eon, Tvj = 25C

Eoff, Tvj = 25C
Eon, Tvj = 150C
Eoff, Tvj = 150C

2250

750

2000
1750

600

E [mJ]

IC [A]

1500
450

1250
1000

300

750
500

150

250
0

9
VGE [V]

10

11

12

13

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
5

150

300

450
IC [A]

600

750

900

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

IGBT,)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=15V,IC=450A,VCE=1800V

IGBT,
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)

2000

100
Eon, Tvj = 25C
Eoff, Tvj = 25C
Eon, Tvj = 150C
Eoff, Tvj = 150C

1800

ZthJC : IGBT

1600
1400

E [mJ]

ZthJC [K/kW]

1200
1000
800

10

600
400
i:
1
2
3
4
ri[K/kW]: 3,87
16,4
5,79 2,34
i[s]:
0,00307 0,0411 0,415 5,51

200
0

5
6
RG []

1
0,001

10

0,01

0,1

10

100

t [s]

IGBT,RBSOA
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=15V,RGoff=3.3,Tvj=150C

,)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)

1050

900
IC, Modul
IC, Chip

Tvj = 150C
Tvj = 125C
Tvj = 25C

900

750

750
600

IF [A]

IC [A]

600
450

450
300
300
150

150

500

1000

1500 2000
VCE [V]

2500

3000

3500

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
6

0,0

0,5

1,0

1,5

2,0
VF [V]

2,5

3,0

3,5

4,0

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

,)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.7,VCE=1800V

,)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=450A,VCE=1800V

800

700
Erec, Tvj = 25C
Erec, Tvj = 150C

Erec, Tvj = 25C

Erec, Tvj = 150C

700

600

600

500

500
E [mJ]

E [mJ]

400
400

300
300
200

200

100

100
0

150

300

450
IF [A]

600

750

900

2500

3000

3500

RG []

,
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)

,(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150C

100

1050
ZthJC : Diode

IR, Modul

900

600
IR [A]

ZthJC [K/kW]

750

10

450

300

150

i:
1
2
3
4
ri[K/kW]: 8,48
23,3
9,79 3,9
i[s]:
0,00268 0,0368 0,333 4,15

1
0,001

0,01

0,1

10

100

t [s]
preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
7

500

1000

1500 2000
VR [V]

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

/Circuitdiagram

/Packageoutlines
Pitch 100

43
48,9
49,9

22

22

33,5

49,9
48,9
43
C

(4x)

33,5

(4x) 8,5 0,1

0,6 A B C

74
63,5
(6x) 7mm
screwing depth

44,6
29,5

140 0,4
4,
6

20

(6x
)M
3

0,6 A B C
(6x)

70
(4x) 16mm screwing depth
B

(4x) M8

6,6 0,2 (4x)

(4x)18

0,4 A B C
(4x)

86
99,8

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
8

40 0,3

59
63,5

36 0,3

(3x)18
21

3,1

29,5
37,2

0
4 0,3

PCB 80 MAX

127

20

/TechnicalInformation
IGBT-
IGBT-Module

FF450R33TE3

PreliminaryData

Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
InfineonTechnologiesAG2015.
AllRightsReserved.



www.infineon.com





Terms&Conditionsofusage


IMPORTANTNOTICE
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(Beschaffenheitsgarantie).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthisdocumentandany
applicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseoftheproductofInfineonTechnologies
incustomersapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomerstechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologiesproductsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.

preparedby:MW

dateofpublication:2016-05-18

approvedby:DTS

revision:V2.0
9