SKP06N60,

SKB06N60
SKA06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation
C
combined with low conduction losses
Short circuit withstand time 10 s
Designed for:
- Motor controls
G
E
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
P-TO-220-3-1
P-TO-263-3-2 (D-PAK)
- parallel switching capability
(TO-220AB)
(TO-263AB)
Very soft, fast recovery anti-parallel EmCon diode
Isolated TO-220, 2.5kV, 60s
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP06N60

VCE

IC

VCE(sat)

Tj

600V

6A

2.3V

150C

SKB06N60
SKA06N60

5A

P-TO-220-3-31
(FullPAK)

Package

Ordering Code

TO-220AB

Q67040-S4230

TO-263AB

Q67040-S4231

TO-220-3-31

Q67040-S4340

Maximum Ratings
Parameter

Value

Symbol

Collector-emitter voltage

VCE

DC collector current

IC

Unit

SKP06N60
SKB06N60

SKA06N60

600

600

TC = 25C

12

TC = 100C

6.9

5.0

24

24

24

24

TC = 25C

12

12

TC = 100C

Pulsed collector current, tp limited by Tjmax

ICpul s

Turn off safe operating area

VCE 600V, Tj 150C

IF

Diode forward current

Diode pulsed current, tp limited by Tjmax

IFpul s

24

24

Gate-emitter voltage

VGE

20

20

10

10

68

32

1)

tSC

Short circuit withstand time

VGE = 15V, VCC 600V, Tj 150C

Ptot

Power dissipation
TC = 25C
2)

Mounting Torque, M3 Screw

Operating junction and storage temperature

Tj , Tstg

1)
2)

1.0

V
s
W
Nm

-55...+150 -55...+150 C

Allowed number of short circuits: <1000; time between short circuits: >1s.
Maximum mounting processes: 3
1

Jul-02

SKP06N60,

SKB06N60
SKA06N60

Thermal Resistance
Parameter

Symbol

Conditions

Unit

Max. Value
SKP06N60
SKB06N60

SKA06N60

Characteristic
IGBT thermal resistance,

RthJC

1.85

3.9

RthJCD

3.5

5.0

K/W

junction case
Diode thermal resistance,
junction case
RthJA

Thermal resistance,

TO-220AB

junction ambient

62

TO220-3-31
1)

SMD version, device on PCB

RthJA

65

TO-263AB

40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Conditions

Value
min.

Typ.

max.

600

1.7

2.0

2.4

2.3

2.8

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V , I C = 5 00 A

Collector-emitter saturation voltage

VCE(sat)

V G E = 15 V , I C = 6 A
T j =2 5 C
T j =1 5 0 C

VF

Diode forward voltage

V G E = 0V , I F = 6 A
T j =2 5 C

1.2

1.4

1.8

T j =1 5 0 C

1.25

1.65

Gate-emitter threshold voltage

VGE(th)

I C = 25 0 A , V C E = V G E

Zero gate voltage collector current

ICES

V C E = 60 0 V, V G E = 0 V

T j =2 5 C

20

T j =1 5 0 C

700

Gate-emitter leakage current

IGES

V C E = 0V , V G E =2 0 V

100

nA

Transconductance

gfs

V C E = 20 V , I C = 6 A

4.2

Input capacitance

Ciss

V C E = 25 V ,

350

420

pF

Output capacitance

Coss

V G E = 0V ,

38

46

Reverse transfer capacitance

Crss

f= 1 MH z

23

28

Gate charge

QGate

V C C = 48 0 V, I C =6 A

32

42

nC

Dynamic Characteristic

V G E = 15 V
Internal emitter inductance

LE

T O - 22 0A B

nH

IC(SC)

V G E = 15 V ,t S C 10 s
V C C 6 0 0 V,
T j 1 5 0 C

60

measured 5mm (0.197 in.) from case

2)

Short circuit collector current

1)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2

Jul-02

SKP06N60,

SKB06N60
SKA06N60

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

25

30

18

22

220

264

54

65

0.110

0.127

0.105

0.137

0.215

0.263

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =2 5 C ,
V C C = 40 0 V, I C = 6 A,
V G E = 0/ 15 V ,
R G =50 ,
1)
L = 18 0 nH ,
1)
C = 25 0 pF
Energy losses include
tail and diode
reverse recovery.

trr

T j =2 5 C ,

200

tS

V R = 2 00 V , I F = 6 A,

17

tF

d i F / d t =2 0 0 A/ s

183

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

ns

Diode reverse recovery charge

Qrr

200

nC

Diode peak reverse recovery current

Irrm

2.8

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

180

A/s

Switching Characteristic, Inductive Load, at Tj=150 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

24

29

17

20

248

298

70

84

0.167

0.192

0.153

0.199

0.320

0.391

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

T j =1 5 0 C
V C C = 40 0 V, I C = 6 A,
V G E = 0/ 15 V ,
R G = 50 ,
1)
L =1 8 0n H,
1)
C = 2 50 pF
Energy losses include
tail and diode
reverse recovery.

trr

T j =1 5 0 C

290

tS

V R = 2 00 V , I F = 6 A,

27

tF

d i F / d t =2 0 0 A/ s

263

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

ns

Diode reverse recovery charge

Qrr

500

nC

Diode peak reverse recovery current

Irrm

5.0

Diode peak rate of fall of reverse

recovery current during t b

d i r r /d t

200

A/s

1)

Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E.

3

Jul-02

SKP06N60,

30A

SKP06N60
SKB06N60
SKA06N60

SKB06N60
SKA06N60

Ic
tp=2s

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A

20A
TC=80C

TC=110C
10A

Ic
0A
10Hz

15s

50s

1A

200s

100Hz

1kHz

10kHz

100kHz

1V

100V

1000V

SKP06N60
SKB06N60
SKP06N60
SKB06N60

IC, COLLECTOR CURRENT

Ptot, POWER DISSIPATION

10V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 150C)

80W

40W

SKA06N60
20W

0W
25C

DC

0,1A

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 50)

60W

1ms

SKP06N60
SKB06N60
SKA06N60

50C

75C

100C

10A

SKA06N60
5A

0A
25C

125C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature
(Tj 150C)

50C

75C

100C

125C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)

Jul-02

20A

20A

15A

15A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

SKP06N60,

VGE=20V
10A

5A

0A
0V

15V
13V
11V
9V
7V
5V

1V

2V

3V

4V

18A

Tj=+25C
-55C
+150C

IC, COLLECTOR CURRENT

16A
14A
12A
10A
8A
6A
4A
2A
0A
0V

2V

4V

6V

8V

10V

10A

15V
13V
11V
9V
7V
5V

5A

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristics
(Tj = 150C)

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics
(Tj = 25C)

20A

VGE=20V

0A
0V

5V

SKB06N60
SKA06N60

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristics
(VCE = 10V)

4.0V

IC = 12A

3.5V

3.0V

IC = 6A

2.5V

2.0V

1.5V

1.0V

-50C

0C

50C

100C

150C

Tj, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)

Jul-02

SKP06N60,

SKB06N60
SKA06N60

100ns

td(off)

t, SWITCHING TIMES

t, SWITCHING TIMES

t d(off)

tf

t d(on)

tf
100ns

t d(on)

tr
tr
10ns
0A

3A

6A

9A

12A

10ns
0

15A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50,
Dynamic test circuit in Figure E)

50

100

150

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)

VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

5.5V

t, SWITCHING TIMES

t d(off)

100ns
tf

td(on)

tr
10ns
0C

50C

100C

5.0V
4.5V
4.0V

max.

3.5V
typ.

3.0V
2.5V

min.

2.0V

150C

-50C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)

0C

50C

100C

150C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.25mA)

Jul-02

SKP06N60,

SKB06N60
SKA06N60

0.6mJ

0.8mJ
*) Eon and Ets include losses
due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

E ts *

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

E ts *
0.6mJ

0.4mJ
E on *
E off
0.2mJ

0.0mJ
0A

3A

6A

9A

12A

0.4mJ

E off

0.0mJ
0

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50,
Dynamic test circuit in Figure E)

E on *

0.2mJ

50

100

150

RG, GATE RESISTOR

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)

0.4mJ

E, SWITCHING ENERGY LOSSES

*) Eon and Ets include losses

due to diode recovery.

E ts *

0.3mJ

0.2mJ

E on *

E off
0.1mJ

0.0mJ
0C

50C

100C

150C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)

Jul-02

SKP06N60,

SKB06N60
SKA06N60

1nF

25V

C iss

120V

480V

C, CAPACITANCE

VGE, GATE-EMITTER VOLTAGE

20V

15V

10V

100pF

C oss

5V
C rss
0V
0nC

15nC

30nC

10pF
0V

45nC

QGE, GATE CHARGE

Figure 16. Typical gate charge
(IC = 6A)

20V

30V

100A

IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

tsc, SHORT CIRCUIT WITHSTAND TIME

25 s

20 s

15 s

10 s

5 s

0 s
10V

10V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

11V

12V

13V

14V

80A

60A

40A

20A

0A
10V

15V

VGE, GATE-EMITTER VOLTAGE

Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C)

12V

14V

16V

18V

20V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE 600V, Tj = 150C)

Jul-02

500ns

1000nC

400ns

800nC

IF = 12A

300ns

200ns

IF = 6A
IF = 3A

100ns

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

SKP06N60,

d i F / d t, DIODE CURRENT SLOPE

Figure 20. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)

600nC

400nC

10A

500A/s

IF = 6A
IF = 3A

4A

2A

0A
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s

OF REVERSE RECOVERY CURRENT

600A/s

6A

IF = 3A

200nC

12A

IF = 12A

IF = 6A

d i F / d t, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)

d i r r /d t, DIODE PEAK RATE OF FALL

Irr, REVERSE RECOVERY CURRENT

IF = 12A

0nC
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s

0ns
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s

8A

SKB06N60
SKA06N60

400A/s

300A/s

200A/s

100A/s

0A/s
50A/s

d i F / d t, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)

150A/s 250A/s 350A/s 450A/s 550A/s

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)

Jul-02

SKP06N60,

SKB06N60
SKA06N60

2.0V
12A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

10A

8A
150C

6A

100C
4A
25C

I F = 12A

1.5V

I F = 6A

-55C

2A

0A
0.0V

0.5V

1.0V

1.5V

1.0V

2.0V

VF, FORWARD VOLTAGE

Figure 24. Typical diode forward current as
a function of forward voltage

-40C

0C

40C

80C

120C

Tj, JUNCTION TEMPERATURE

Figure 25. Typical diode forward voltage as
a function of junction temperature

10 K/W

ZthJCD, TRANSIENT THERMAL IMPEDANCE

ZthJCD, TRANSIENT THERMAL IMPEDANCE

D=0.5
0

10 K/W 0.2

SKP06N60
SKB06N60

0.1
0.05

R,(K/W)
0.523
0.550
0.835
1.592

0.02
-1

10 K/W
0.01

R1

, (s)=
7.25*10-2
6.44*10-3
7.13*10-4
7.16*10-5
R2

single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2

D=0.5

0.2

10 K/W
0.1

SKA06N60

0.05

R,(K/W)
2.852
0.654
0.665
0.828

0.02
-1

10 K/W

, (s)=
1.887
4.64*10-2
2.88*10-3
3.83*10-4

R1

0.01

single pulse

R2

C 1 = 1 / R 1 C 2 = 2 /R 2

-2

10 K/W
1s

10s

100s

1ms

10ms 100ms

-2

10 K/W
10s

1s

tp, PULSE WIDTH

Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)

100s

1ms

10ms 100ms

1s

10s

tp, PULSE WIDTH

Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)

10

Jul-02

SKP06N60,

SKB06N60
SKA06N60

10 K/W

D=0.5
0

ZthJC, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

10 K/W
0.2
0.1
0.05

SKP06N60
SKB06N60

-1

10 K/W
0.02

-2

R,(K/W)
0.705
0.561
0.583

0.01

10 K/W

R1

, (s)=
0.0341
3.74E-3
3.25E-4
R2

single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2

-3

10 K/W
1s

10s 100s

1m s

10m s 100m s

D=0.5
0
10 K/W 0.2
0.1

0.05
-1
10 K/W 0.02

0.01
-2

10 K/W

, (s)=
1.83
2.93*10-2
2.46*10-3
3.45*10-4
R2

single pulse
-3

1s

R,(K/W)
2.73
0.395
0.353
0.323
R1

10 K/W
1s

tp, PULSE WIDTH

Figure 28. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)

SKA06N60

C1=1/R1

C 2=2/R2

10s 100s 1ms 10ms 100ms

1s

10s

tp, PULSE WIDTH

Figure 29. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)

11

Jul-02

SKP06N60,

SKB06N60
SKA06N60
dimensions

TO-220AB
symbol

[mm]

[inch]

min

max

min

max

9.70

10.30

0.3819

0.4055

14.88

15.95

0.5858

0.6280

0.65

0.86

0.0256

0.0339

3.55

3.89

0.1398

0.1531

2.60

3.00

0.1024

0.1181

6.00

6.80

0.2362

0.2677

13.00

14.00

0.5118

0.5512

4.35

4.75

0.1713

0.1870

0.38

0.65

0.0150

0.0256

0.95

1.32

0.0374

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

0.1693

0.1772

1.17

1.40

0.0461

0.0551

2.30

2.72

0.0906

0.1071

dimensions

TO-263AB (D2Pak)
symbol

[inch]
max

min

max

9.80

10.20

0.3858

0.4016

0.70

1.30

0.0276

0.0512

1.00

1.60

0.0394

0.0630

1.03

1.07

0.0406

0.0421

E
F
G
H

2.54 typ.
0.65

0.85

5.08 typ.
4.30

4.50

0.1 typ.
0.0256

0.0335

0.2 typ.
0.1693

0.1772

1.17

1.37

0.0461

0.0539

9.05

9.45

0.3563

0.3720

2.30

2.50

0.0906

0.0984

15 typ.

0.5906 typ.

0.00

0.20

0.0000

0.0079

4.20

5.20

0.1654

0.2047

12

[mm]
min

8 max

8 max

2.40

3.00

0.0945

0.1181

0.40

0.60

0.0157

0.0236

10.80

0.4252

1.15

0.0453

6.23

0.2453

4.60

0.1811

9.40

0.3701

16.15

0.6358

Jul-02

SKP06N60,

SKB06N60
SKA06N60

P-TO220-3-31

Please refer to mounting instructions (application note AN-TO220-3-31-01)

dimensions
symbol

[mm]

[inch]

min

max

min

max

10.37

10.63

0.4084

0.4184

15.86

16.12

0.6245

0.6345

0.65

0.78

0.0256

0.0306

2.95 typ.

0.1160 typ.

3.15

3.25

0.124

0.128

6.05

6.56

0.2384

0.2584

13.47

13.73

0.5304

0.5404

3.18

3.43

0.125

0.135

0.45

0.63

0.0177

0.0247

1.23

1.36

0.0484

0.0534

2.54 typ.

0.100 typ.

4.57

4.83

0.1800

0.1900

2.57

2.83

0.1013

0.1113

2.51

2.62

0.0990

0.1030

13

Jul-02

SKP06N60,

SKB06N60
SKA06N60

i,v
tr r =tS +tF

diF /dt

Qr r =QS +QF
tr r
IF

tS
QS

Ir r m

tF

QF

10% Ir r m

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L =180nH
an d Stray capacity C =250pF.

Figure B. Definition of switching losses

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SKP06N60,

SKB06N60
SKA06N60

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Infineon Technologies AG 2000
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15

Jul-02

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