1) A piece of gold resistor is used as a heater. The thickness of the resistor is 0.1 m.

The
width of the resistor is 1 m. What is the necessary length if 50 Ohm total resistance is to
be achieved?
SolutionThickness (T) = 0.1 m = 0.1 x 10-6 m.
Width (W) = 1 m = 1x 10-6 m.
Area (A) = T x W
A = 0.1 x 10-6 x 1x 10-6 .
A = 1 x 10-13 m.
R = 50
Consider = 2.271 x 10-4 m.
We know that, R = L A . Where L is the lenth.
L = 1 x 10-13/ 2.271 x 10-4 m
Length 220 m.

2) A phosphorous-doped silicon resistor is 100 m long, 2 m wide, and 0.5 m thick.

The doping concentration is 1017 atoms/cm3. The electron mobility ( n), which is a
function of the doping concentration, is approximately 1350 cm2/(Vs). The hole mobility
is approximately 480 cm2/ (Vs). What are the concentrations of electrons and holes under
thermal equilibrium at room temperature? Find the resistivity of the material and
the total resistance.
Solution:Consider charge of an Electron (e) = 1.6 x 10-19 C.
Electron Mobility () = 1350 cm2/(Vs)
Doping Concentration (n) = 1017 atoms/cm3
Ni2 = n x p
p = (5x1013)2 / 1017 ...... (Ni for silicon is considered as 5 x 1013)
concentration of holes (p) = 2.5 x 1010 atoms/cm3
concentration of electrons (n) 1017 atoms/cm3

So, The Conductivity is given as () = e x x n

= 1.6 x 10-19 x 1350 x 1017
= 21.6 mho/cm.
Resistivity () is given as 1/ .
= 1/ 21.6
Resistivity() = 0.046 cm.

Resistance (R) = [ length/ Area ]

Area = Thickness x Width
Area = 2 x 10-6 x 0.5 x 10-6
Area = 1x 10-12 m.
R = 4.6 x [ 100 x 10 -6 / 1 x 10 -12 ]
Resistance (R) = 460 M.

3. Strain gauges are transducers that measure mechanical strain. Electrically, the strain
gauge are resistors. The strain causes a change in resistance that is proportional to the
strain. The figure shows four strain gauges connected to a configuration called a
Wheastone bridge. The nominal resistance when strain is zero equals to 120. The
resistance is expected to increase or decrease by no more than 2 due to strain.
Determine the amplifier gain b needed to cause vo to be related to R by
v0=5volt/ohm*R

Solution:Solving the Wheatstone Bridge in the figure,

Vi =

R+ R
R R

R+ R + R R R R+ R+ R

Vi =

Vi =

[ ]

Vi =

[ ] x 50 mV

R+ R R R

2R
2R
R
R

x 50 mV.

x 50 mV.

x 50 mV.

2
120

......................... (as R = 2 and R = 120)

Vi = 8.33 x 10-4 V.
We know that , bVi = Vo
bVi = 5 x R ...................... (given Vo=5volt/ohm*R)
b=

5xR
Vi

Gain (b) 12004.80

4. (a) Derive the transfer function of the circuit V0()/vs() (b) plot the Bode Plot of the
transfer function (c)The input to the circuit is Vs=50+30cos(500t+1150)20cos(2500t+300)mV. Find the steady state output voltage vo(t) for (a) C=0.1uF and (b)
C=0.01uF.

Solution:In the op-amp we know that ,

1) v+ = v2) i+ = i- = 0
Consider Capacitor (C) = 1/ j C
Applying KVL to the circuit ,
0Vs
1
R 1+
jC 1

+0+

Vs
1
R 1+
jC 1

=[

Vo
Vs

0Vo
R2

0Vo
1
jC 2

1
+ jC 2
R2

=0

R 2 jC 1

= H( ) = ( 1+ R 1 jC 1 ) +(1+ R 2 jC 2)

Transfer Function {H( )} =

Transfer Function {H( )} =

0.01 j
j
j
1+
[1+
]
200
1000

.................... (for C2 = 0.1uF)

0.01 j
j
j
1+
[1+
]
200
1000 0

.................... (for C2 =

0.01uF)

b) To draw a Bode Plot we convert the Transfer function into Frequency Domain.
Transfer Function {H( s )} =

Bode Plot :-

2000 S
S 2+1200 S +200000

..............(C2 = 0.1 uF)

Similarly,
Transfer Function {H( s )} =

Bode Plot:-

20000 S
S 2+10200 S +2000000

..............(C2 = 0.01 uF)

c)
Steady State Output Vo(t) = H( ) x Vs( ) . Take time(t) = 1 sec.
(1) for C2 = 0.1uF

Vo =

0.01 j
j
j
1+
[1+
]
200
1000

0.01 j
j
j
1+
[1+
]
200
1000

x 50 +

0.01 j
j
j
1+
[ 1+
]
200
1000

x 20cos(2500t+300).

Vo = 50 -1.15- 7.79j - 0.32+2.29j

x 30cos(500t+1150) -

Vo = 48.53-5.5j
(2) for C2 = 0.01 uF

Vo =

0.01 j
j
j
1+
[1+
]
200
10000

0.01 j
j
j
1+
[1+
]
200
10000

x 50 +

0.01 j
j
j
1+
[1+
]
200
10000

x 30cos(500t+1150) -

20cos(2500t+300).
Vo= 50+ 45.57 + 15.63 j - 6.09 - 2.09j
Vo = 89.48 + 13.54j

5. Find published product specification sheets of three accelerometers, two of them based
on MEMS technology and one based on non-MEMS technology. Summarize the
performance of these three sensor products according to the sensor performance criteria
in the first lecture.
1) Small, Low Power, 3-Axis 3 g MEMS Accelerometer (ADXL335)

3-axis sensing
Small, low - profile package
4 mm x 4mm x 1.45mm LFCSP
Low Power - 350 A
Single-Supply Operation :- 1.8V to 3.6V
10,000 g shock survival
Excellent temperature stability
BW adjustment with a single capacitor per axis
RoHS/WEEE lead-free compliant

2) Single-Axis, High-g, MEMS Accelerometers (ADXL78)

Complete acceleration measurement system on a single monolithic IC
Available in 35 g, 50 g, or 70 g output full-scale ranges
Full differential sensor and circuitry for high resistance to EMI/RFI
Environmentally robust packaging
Complete mechanical and electrical self-test on digital command
Output ratio metric to supply
Sensitive axes in the plane of the chip
High linearity (0.2% of full scale)
Frequency response down to dc
Low noise
Low power consumption (1.3 mA)
Tight sensitivity tolerance and 0 g offset capability Largest available prefilter
clipping headroom
400 Hz, 2-pole Bessel filter
Single-supply operation Compatible with Sn/Pb and Pb-free solder processes
Qualified for automotive applications

3) 3-axis, 14-bit/8-bit digital Non-MEMS accelerometer (MMA8451Q)

1.95 V to 3.6 V supply voltage

1.6 V to 3.6 V interface voltage
2 g/4 g/8 g dynamically selectable full scale
Output data rates (ODR) from 1.56 Hz to 800 Hz
99 g/Hz noise
14-bit and 8-bit digital output
I2C digital output interface (operates to 2.25 MHz with 4.7 k pullup)
Two programmable interrupt pins for seven interrupt sources
Three embedded channels of motion detection Freefall or motion detection: one
channel Pulse detection: one channel Jolt detection: one channel
Orientation (portrait/landscape) detection with programmable hysteresis
Automatic ODR change for auto-wake and return to sleep
32-sample FIFO
High-pass filter data available per sample and through the FIFO
Current consumption: 6 A to 165 A

..............................................THANK YOU........................................................