4N35, 4N36, 4N37

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES
A

6 B

5 C

NC

4 E

Isolation test voltage 5000 VRMS

Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry standard dual-in-line 6 pin package
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

21842

APPLICATIONS
AC mains detection

i179004-5

Reed relay driving

DESCRIPTION

Switch mode power supply feedback

Each optocoupler consists of gallium arsenide infrared LED

and a silicon NPN phototransistor.

Telephone ring detection

AGENCY APPROVALS

Logic coupling with high frequency noise rejection

Logic ground isolation

Underwriters laboratory file no. E52744

BSI: EN 60065:2002, EN 60950:2000
FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156

ORDER INFORMATION
PART

REMARKS

4N35

CTR > 100 %, DIP-6

4N36

CTR > 100 %, DIP-6

4N37

CTR > 100 %, DIP-6

ABSOLUTE MAXIMUM RATINGS

PARAMETER

(1)

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT
Reverse voltage

VR

Forward current

IF

50

mA

t 10 s

Surge current

IFSM

Pdiss

70

mW

Collector emitter breakdown voltage

VCEO

70

Emitter base breakdown voltage

VEBO

IC

50

mA

IC

100

mA

Pdiss

70

mW

VISO

Power dissipation
OUTPUT

Collector current

t 1 ms

Power dissipation
COUPLER
Isolation test voltage

5000

VRMS

Creepage

mm

Clearance

mm

0.4

mm

Isolation thickness between emitter

and detector

Document Number: 81181

Rev. 1.2, 07-Jan-10

For technical questions, contact: optocoupleranswers@vishay.com

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153

4N35, 4N36, 4N37

Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER

(1)

TEST CONDITION

SYMBOL

VALUE

UNIT

VIO = 500 V, Tamb = 25 C

RIO

1012

VIO = 500 V, Tamb = 100 C

RIO

1011

Storage temperature

Tstg

- 55 to + 150

Operating temperature

Tamb

- 55 to + 100

Junction temperature

Tj

100

Tsld

260

COUPLER
Comparative tracking index
Isolation resistance

Soldering temperature (2)

DIN IEC 112/VDE 0303, part 1

max.10 s dip soldering:

distance to seating plane
1.5 mm

175

Notes
(1) T
amb = 25 C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).

ELECTRICAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT
Junction capacitance
Forward voltage (2)
Reverse current

(2)

Capacitance

VR = 0 V, f = 1 MHz

Cj

50

IF = 10 mA

VF

1.3

1.5

IF = 10 mA, Tamb = - 55 C

VF

1.3

1.7

10

0.9

VR = 6 V

IR

0.1

VR = 0 V, f = 1 MHz

CO

25

pF

pF

OUTPUT
Collector emitter breakdown
voltage(2)
Emitter collector breakdown
voltage(2)

IC = 1 mA

4N35

BVCEO

30

4N36

BVCEO

30

4N37

BVCEO

30

BVECO

4N35

BVCBO

70

4N36

BVCBO

70

4N37

BVCBO

70

4N35

ICEO

50

nA

IE = 100 A

OUTPUT
Collector base breakdown
voltage (2)

IC = 100 A, IB = 1 A

VCE = 10 V, IF = 0
Collector emitter leakage current (2)

Collector emitter capacitance

4N36

ICEO

50

nA

VCE = 10 V, IF = 0

4N37

ICEO

50

nA

4N35

ICEO

500

VCE = 30 V, IF = 0,
Tamb = 100 C

4N36

ICEO

500

4N37

ICEO

500

VCE = 0

CCE

pF

0.6

pF

COUPLER
Resistance, input output (2)

VIO = 500 V

RIO

Capacitance, input output

f = 1 MHz

CIO

1011

Notes
(1) T
amb = 25 C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.

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For technical questions, contact: optocoupleranswers@vishay.com

Document Number: 81181

Rev. 1.2, 07-Jan-10

4N35, 4N36, 4N37

Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN

4N35

CTRDC

100

4N36

CTRDC

100

4N37

CTRDC

100

4N35

CTRDC

40

50

4N36

CTRDC

40

50

4N37

CTRDC

40

50

TEST CONDITION

SYMBOL

MIN.

TYP.

VCC = 10 V, IC = 2 mA, RL = 100

ton, toff

VCE = 10 V, IF = 10 mA
DC current transfer ratio (1)
VCE = 10 V, IF = 10 mA,
TA = - 55 C to + 100 C

TYP.

MAX

UNIT

Note
(1) Indicates JEDEC registered values.

SWITCHING CHARACTERISTICS
PARAMETER
Switching time

(1)

MAX.

10

UNIT
s

Note
(1) Indicates JEDEC registered values.

TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specied

1.5

1.3

NCTR - Normalized CTR

TA = - 55 C

1.2
TA = 25 C

1.1
1.0
0.9

TA = 85 C

0.8
1

10

NCTR - Normalized CTR

TA = 50 C

0.5
NCTR(SAT)
NCTR
0.1

1.0
TA = 25 C

0.5
NCTR(SAT)

Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.

LED Current

Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 C

0.5
NCTR(SAT)
NCTR

NCTR
0.0
i4n25_02

10

100

IF - LED Current (mA)

Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.

LED Current
Document Number: 81181
Rev. 1.2, 07-Jan-10

100

1.5

Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) = 0.4 V

10

IF - LED Current (mA)

i4n25_03

Fig. 1 - Forward Voltage vs. Forward Current

1.5

1.0

100

IF - Forward Current (mA)

i4n25_01

Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V

0.0

0.7
0.1

NCTR - Normalized CTR

VF -Forward Voltage (V)

1.4

0.0
0.1
i4n25_04

10

100

IF - LED Current (mA)

Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.

LED Current

For technical questions, contact: optocoupleranswers@vishay.com

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155

4N35, 4N36, 4N37

Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

1.5

Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C
CTRCE(sat) VCE = 0.4 V

NCTRcb - Normalized CTRcb

NCTR - Normalized CTR

1.5

1.0
TA = 85 C

0.5
NCTR(SAT)
NCTR
1

10

100

IF - LED Current (mA)

i4n25_05

10

100

IF - LED Current (mA)

10

30
25

50 C

20
70 C

15
85 C

25 C
10
5

Normalized Photocurrent

ICE - Collector Current (mA)

25 C
50 C
70 C

Fig. 8 - Normalized CTRcb vs. LED Current and Temperature

35

10

20

30

40

50

60

0.1
Nib, TA = - 20 C
Nib, TA = 20 C
Nib, TA = 50 C
Nib, TA = 70 C

i4n25_09

IF - LED Current (mA)

i4n25_06

Normalized to:
IF = 10 mA, TA = 25 C

0.01
0.1

Fig. 6 - Collector Emitter Current vs.

Temperature and LED Current

10

100

IF - LED Current (mA)

Fig. 9 - Normalized Photocurrent vs. IF and Temperature

105

1.2

70 C

NhFE - Normalized hFE

ICEO - Collector Emitter (nA)

0.5

i4n25_08

Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.

LED Current

10

1.0

0.0
0.1

0.0
0.1

Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 C

103
102
VCE = 10 V
101
Typical

100
10- 1
10- 2
- 20

i4n25_07

25 C
- 20 C
0.8
Normalized to:
IB = 20 A, VCE = 10 V,
TA = 25 C

0.6

0.4
0

20

40

60

80

100

Tamb- Ambient Temperature (C)

Fig. 7 - Collector Emitter Leakage Current vs. Temperature

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156

1.0

1
i4n25_10

10

100

1000

Ib - Base Current (A)

Fig. 10 - Normalized Non-Saturated hFE vs.

Base Current and Temperature

For technical questions, contact: optocoupleranswers@vishay.com

Document Number: 81181

Rev. 1.2, 07-Jan-10

4N35, 4N36, 4N37

NhFE(sat) - Normalized Saturated hFE

Optocoupler, Phototransistor Output, Vishay Semiconductors

with Base Connection

1.5
Normalized to:
VCE = 10 V, Ib = 20 A
TA = 25 C

70 C 50 C

VCC = 5 V

1.0

f = 10 kHz
DF = 50 %

25 C
- 20 C

VO

0.5
IF = 10 mA

VCE = 0.4 V
0.0
1

10

100

1000

Ib - Base Current (A)

i4n25_11

i4n25_14

Fig. 11 - Normalized hFE vs. Base Current and Temperature

tPHL

2.0

100

1.5

10
tPLH

1
0.1

tPHL - Propagation Delay (s)

IF = 10 mA, TA = 25 C
VCC = 5.0 V, Vth = 1.5 V

i4n25_12

Fig. 14 - Switching Schematic

2.5

1000

tPLH- Propagation Delay (s)

RL

1.0
100

10

RL - Collector Load Resistor (k)

Fig. 12 - Propagation Delay vs. Collector Load Resistor

IF

tD
tR

VO

tPLH
VTH = 1.5 V
tPHL

tS

tF

i4n25_13

Fig. 13 - Switching Timing

Document Number: 81181

Rev. 1.2, 07-Jan-10

For technical questions, contact: optocoupleranswers@vishay.com

www.vishay.com
157

4N35, 4N36, 4N37

Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
PACKAGE DIMENSIONS in millimeters
7.62 typ.
7.12 0.3

3.5 0.3

6.5 0.3

1.2 0.1

14771_2

2 3

4.5 0.3

0.5 0.1

2.8 0.15

4.5 0.3

0.25
7.62 to 9.5 typ.

PACKAGE MARKING
4N35
V YWW 24
21764-24

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158

For technical questions, contact: optocoupleranswers@vishay.com

Document Number: 81181

Rev. 1.2, 07-Jan-10

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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16

Document Number: 91000