SULTAN HAJI AHMAD SHAH

DEPARTMENT OF ELECTRICAL
ENGINEERING

DEE6113 CMOS IC DESIGN

PRACTICAL WORK REPORT # 01

INTRODUCTION TO
MICROWIND 2.6A SOFTWARE

LECTURER NAME: PUAN NOORFOZILA BINTI BAHARI

DATE OF SUBMISSION: 28 JUNE 2016
SUBMITTED BY:

AZIZUL HAKIMI BIN ZULKAFLEE

NO

REGISTRATIO
N NO.

STUDENT NAME

CLASS

1.

02DEE14F10
56

AZIZUL HAKIMI BIN

ZULKAFLEE

DEE5
D

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1.1TITLE

Introduction to Microwind 2.6a.

1.2LEARNING OUTCOMES
1. Understand the features of Microwind software.
2. Practice drawing the layout of simple devices such as MOS transistor.
3. Practice simulating the layout of simple devices such as MOS
transistor.

1.3EQUIPMENT/TOOLS

PC Set & Microwind 2.6a software.

1.4RESULTS
Below are the results of the following:
1. NMOS transistor
a. transistor layout

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b. transistor cross section

c. I-V Characteristics Curve

2. PMOS transistor
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a. transistor layout

b. transistor cross section

c. I-V Characteristics Curve

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1.5DISCUSSION
1. Explain the terminology technology feature.
Technology feature is known as transistor size or transistor feature.
The feature size of any semiconductor technology is defined as the
minimum length of the MOS transistor channel between the drain and
the source. For example, the lambda size that we choose in the
foundry are the technology feature that provided for us to select on
doing the practical work.
2. Describe the difference between micron and lambda unit in layout design
process.
Lambda is scalable and Micron is not scalable which is fixed. Micron is
fixed for the technology but lambda unit is made for the designers
convenience to draw layout properly. According to your selection the
layout screen will adjust the grid easily. This method is simply
counting the space between the grid.
3. PMOS transistor is usually larger than NMOS transistor in layout. Give an
explanation.
Due to differences in carrier mobility between P and N type
semiconductor, for similarly doped channels the channel of a PMOS
FET will be a bit wider than the channel of an NMOS FET so that they
both have identical channel resistance. To make the channel wider
the PMOS FET will take a larger chip area.

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1.6CONCLUSION
Give TWO(2) conclusions for this practical work.
Based on the practical work above, we able to understand the
features of Microwind software. We able to use the Microwind software
without any mistakes and choose the correct features for our practical work
experiment. Next, we able to practice drawing and simulating the layout of
simple devices such as MOS transistor. As a proof, we able to give the
outcome result for this practical work. We able to draw and simulating the
layout successfully as shown in the result.

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