HW2: Diusion Coecient, Band Bending

Due: 12NN, 13 September 2016, Rm 220

Instructions: This is an individual homework. Write your solutions and answers on a yellow paper. Use only one side of
your paper(s). Any answer on the other side will not be considered. Write your name and DC section in the upper
right corner of your paper(s). Use only black or blue inked pens. Encircle or box your nal answers.

1. A Si sample is doped with NA = 5 1014 /cm3 , with corresponding hole mobilityp = 459cm2 /V sec. Determine the
hole diusion coecient DP . Assume T=300K and the sample is in equilibrium
2. Given the energy band diagram of a Silicon sample at T = 300K in gure 1:

Figure 1: Energy Band Diagram for Problem 2

(a)
(b)
(c)
(d)
(e)
(f)

Sketch the electrostatic potential (V (x)) and label relevant potential dierences.
Sketch the electric eld (E(x)) and label and include all important values
Sketch n(x) and p(x)
Determine the resistivity at x > L. Assume P = 459cm2/V sec
Determine the hole diusion coecient at x > L
Sketch electron drift-current density (JN |drif t ) and the electron diusion-current density (JN |dif f ) as a function
of x. Label the minimum and maximum values.
(g) Sketch electron current density (JN (x)). Label the minimum and maximum values.

3. A Si device has a nonuniform doping NA (x) p(x) = ni e(ax)/b for 0 x L where a = 1.8m, b = 0.1m and
L = 0.8m. Draw the energy band diagram for 0 x L, specically showing EC , EF , Ei , and EV . Sketch the
Electric eld (E ) as a function of x, and compute E at x = L/2. Assume that the device is in thermal equilibrium at
T = 300K .