LIST OF EXPERIMENTS

1.

Characteristics of PN and ZENER diode

2.

Characteristics of CE configuration

3.

Characteristics of CB configuration

4.

Characteristics of UJT and SCR

5.

Characteristics of JFET and MOSFET

6.

Characteristics of DIAC and TRIAC.

7.

Characteristics of PHOTODIODE and PHOTOTRANSISTOR.

EX NO: 6
DATE:

DIODE FORWARD CHARACTERISTIC

AIM:
To determine the forward characteristics of a PN diode and to determine
forward dynamic resistance, Cut-in voltage, emission coefficient and
reverse saturation current I0.
APPARATUS REQUIRED:
S.No. ITEM

RANGE

QTY

1
2

DIODE
RESISTOR

IN4001
1K

VOLTMETER

(0-1V)

AMMETER

RPS

6
7

BREAD BOARD
WIRE

(0-25mA)
DUAL(0-30) V

1
1
1
FEW

TEST EQUIPMENT REQUIRED:

S.No. ITEM
1

VOLTMETER

AMMETER

RANGE

Q.TY

(0-1V)

(0-30mA)

THEORY:
A diode is a PN junction formed by a layer of P type and layer of N type
Semiconductors. Once formed the free electrons in the N region diffuse
across the junction and combine with holes in P region and so a depletion
Layer is developed. The depletion layer consists of ions, which acts like a
barrier for diffusion of charged beyond a certain limit. The difference of
potential
across
the
depletion
layer
is
called
the
barrier
potential.At2.5degree the barrier potential approximately equal 0.7v for
silicon diode and 0.3v for germanium diode. When the junction is forward
bias, the majority carrier acquired sufficient energy to overcome the
barrier and the diode conducts. When the junction is reverse biased the
depletion layer widens and the barrier potential increases. Hence the
Majority carrier cannot cross the junction and the diode does not conduct.
But there will be a leakage current due to minority carrier. When diode is
forward biased, resistance offered is zero, and when reverse biased
resistance offered is infinity. It acts as a perfect switch.
The increased offset for Si is due to the factor . This factor plays a part in
determining the shape of the curve only at very low current levels. Once
the curve starts its vertical rise, the factor drops to 1. The potential at
which this rise occurs is commonly referred to as offset, threshold or firing
potential.

CIRCUIT DIAGRAM:
FORWARD BIAS:
1K

m+
A

(0-25mA)

A
RPS
(0-30V)

IN4001

V
K

(0-1V)

DESCRIPTION:
Forward bias:
INPUT : DC power supply (0 30 V)
OUTPUT: Diode conducts

(0 - 1V)

PROCEDURE:
Forward bias:
1. The connections are made as per the circuit diagram.
2. The positive terminal of power supply is connected to anode of the
diode and negative terminal to cathode of the diode.
3. Forward voltage Vf across the diode is increased in small steps and
the forward current is noted.
4. The readings are tabulated. A graph is drawn between V f and I f.
3

TABULAR COLUMN:
Forward bias:
V(volts)

I(mA)

Model Graph

Calculation to determine & Io

I1 = I0 (e(VF1 / VT ) - 1)
I2 = I0 (e(VF2 / VT ) - 1)

------ I
-------II

When V>>VT, then 1 can be neglected in the above equations

Diving equation I by II and taking loge on both sides, Emission Coefficient
can be found as
= (VF1 - VF2 ) / ( VT * ln(I1 / I2 ) )
Where Voltage equivalence of temperature

V
T

= KT/q= 26mV

Temperature in Kelvin T= 300K

Boltzmann constant K= 8.26*10-5eV/K
q = 1.6*10-19 C
4

Reverse saturation current I0= I1 / (e(VF1 / VT ) - 1)

RESULT:
Thus the characteristic of PN-Junction diode was drawn.
Forward Dynamic Resistance :
Cut-in voltage

Emission Coefficient

Reverse saturation current I0

REVIEW QUESTION
1.
2.
3.
4.
5.
6.
7.

How a PN junction is formed?

In what way the width of depletion region can be varied?
What is potential barrier?
In forward bias condition the current condition is due to______
What is reverse saturation current Ico?
How a diode act as switch?
What is Dynamic Resistance?

Ex. No: 7

CHARACTERISTICS OF CE CONFIGURATION IN A BJT

Aim:
To construct the CE configuration in a BJT and determine the input and
output characteristics.
Apparatus required:
S.no.

Name of the Equipment

Specification

Max Rating : 50V

1A, 3W

1k

Transistor BC 107

Resistors

Regulated power supply (0-30) V

Mc (0-1) v
Voltmeters
Mc (0-30) v

4
5

Ammeters

Bread board &

connecting wires

Qty

Mc (0-25) m A
Mc (0-1) m A

1
1
1
1
1

Test Equipment Required:

S.No. ITEM
1

RANGE

Q.TY

Voltmeters

Mc (0-1) v

Ammeters

Mc (0-30) v
Mc (0-25) m A
Mc (0-1) m A

1
1
1

Theory:
A NPN function transistor consist of a silicon (or germanium) crystal in
which a layer of p type silicon is sandwiched between two layers of N
type silicon. The arrow on emitter lead specifies the direction of the
current flow when the emitter base function is biased in the forward
direction since the conductivity of the BJT depends on both the majority
and minority carriers it is called bipolar device. In CE configuration base
is he o/p terminal, collector is the o/p terminal and emitter is common to
both input and output. The ratio of change in I c to change in base current
Ib is known as Current amplification factor or current gain.
CIRCUIT DIAGRAM:
PIN DIAGRAM OF BC107:
E

DESCRIPTION:
Input Characteristics
INPUT : Voltage across Base Emitter junction VBE and IB
VCE
VCE constant
VBE
OUTPUT : Base current IB

Output Charateristics
INPUT

: Voltage across Collector Emitter junction VCE is varied

Base current IB constant
OUTPUT: Collector current IC
PROCEDURE:
Input Characteristics
Connections are made as per the circuit diagram.
1.
VCE is kept const (say 5v), VBE is varied insteps of 0.1v and the
2.
corresponding IB values are tabulated. The above procedure is
repeated for 10v, 15v, etc.
Graph is plotted between VBE and Ib for a constant VCE
3.
The h-parameters values are found. From the graph
4.
Forward current gain hf e = IC / IB , VCE Constant
5.
Typical value is of the order of 20 to 200.
6. Input impedance hi e

VBE / IB

VCE

Constant

Typical value is of the order of 500 to 2K

Output Characteristics
1. Connection are made as per the circuit diagram
2. IB is kept const, VCE is varied in step IV the corresponding IE values
are tabulated. The above procedure is repeated for different
constant values.
3. Graph is plotted between VCE and Ic for a constant IB.
4. The h parameter values are
Output admittance hoe = IC / VCE,

IB Constant

Typical value is of the order of 0.1 to 10 mho s

Reverse voltage gain hre =

VBE / VCE

IB

Constant

Typical value is of the order of 10-5 to 10-4

TABULAR COLUMN:

Input Charateristics
VCE
VBE(V)

VCE

= 1V

IB (mA)

VBE(V)

2V

IB (mA)

Output Characteristics
IB =
VCE(V)

IB =
IC (mA)

VCE(V)

Ic (mA)

Model graph:
Input Characteristics

IB

Output Characteritics

IC

VCE

VBE

Result:
Thus the input and output characteristic of BJT in common emitter mode
is drawn and h parameter values are found.
hi e

hf e

hr e

ho e

Review question
1.
2.
3.
4.
5.

What is the significance of the h- parameters?

Tabulate the comparison of CC, CE, and CB transistor parameters
What is transportation factor?
Explain briefly the base spreading resistance?
Give the relation of Ebers moll equation.

10

EX NO: 10
DATE:

DRAIN AND TRANSFER CHARACTERISTICS OF J-FET.

Aim:
To plot the drain and transfer characteristics of JFET & to find drain
resistance, transconductance, amplification factor, drain saturation
current IDSS and Pinch off voltage.
Apparatus Required:
S.no.

Name of the
Equipment

Specification

Qty

N-FET, VHF A,
1

2
3
4
5
6

FET BFW10

Resisters
Regulated dual
power supply
Voltmeters

Voltage rating is 30v,

Idss > 8 mA, Vp <8V

470

1k

MC (0-30)V

MC (0-30)V

Ammeters
MC (0-30) mA
Bread board &
connecting wires

Test Equipment Required:

S.No.
1
2

ITEM

SPECIFICATION

Voltmeters
Ammeters

MC (0-30)V
MC (0-30) mA

QTY
2
1

Theory:
Field effect transistor is a semiconductor device that depends for its
operation on the control of current by an electric field. Its operation
depends on the flow of majority carriers only. It is therefore a unipolar

11

device. It exhibits a high input resistance. An N- channel JFET consists of

a N-type bar is sandwiched between two heavily doped Persians. Due to
the concentration gradient, the depletion region formed. On both sides of
the semiconductor bar the ohmic contacts are made. One terminal is
called source & other is called drain. Both the p-type regions are
connected together.

Circuit Diagram
(0- 25mA)

RPS 1
(030)V

BFW10

VV

G
S
(0-30)V

Pin Diagram of Bfw10

VDS
(0-10) V

RPS2
(0- 30)V

470

D
S

G
Shield

DESCRIPTION:
Drain Characteristics
INPUT : Drain voltage VDS is varied insteps of 1V
VGS is kept constant
12

OUTPUT : Drain current ID

Transfer Characteristics
INPUT : Gate source voltage VGS is varied
Drain source voltage VDS is kept constant
OUTPUT : Drain current ID

PROCEDURE:
Drain Characteristics
1. Connections are made as per the circuit diagram.
2. Gate source voltage VGS is kept constant (say 1v), drain voltage VDS
is varied insteps of 1v and the corresponding drain current ID values
are tabulated.
3. The above procedure is repeated for VGS= -2v, 0v.
4. The graph is plotted VDS and ID for a constant VGS.
5. The drain resistance is found from the graph
rd = VDS/ ID
Transfer Characteristics
1. Connections are made as per the circuit diagram.
2. Drain source voltage VDS is kept constant (say 5v), the gate source
voltage VGS is varied insteps of 1v (-VE voltage) and the
corresponding drain current ID values are tabulated.
3. The above procedure is repeated for VDS = 10v, 15v,
4. Graph is plotted between VGS and ID for a constant VDS.
5. The trans conductance is found from the graph
gm =

ID/ VG

TABULAR COLUMN:
Drain characteristics

13

VGS = V

VGS =

VDS (V)

ID (mA)

VDS (V)

ID (mA)

Transfer characteristics
VDS =

VDS =

V
Vgs (V)

ID (mA)

VGS (V)

ID (mA)

MODEL GRAPH:
Drain Characteristics

Transfer Characteristics
ID

ID
(mA)

(mA)

ID
VDS

IG
VGS
VGS (v)

VDS (v)
CALCULATION
Transconduntance gm =

I D / VG

Drain resistance rd

VDS / ID

Amplification factor = gmrd

RESULT:
Thus the drain and transfer for characteristics of JFET is drawn.

14

Drain resistance rd

Trans conductance gm =
Amplification factor

Drain saturation current IDSS =

Pinch off voltage =
Review Questions.
1. Why it is called by name field effect transistor?
2. What is the advantage of FET OVER BJT?
3. What are the disadvantages of FET?
4. What is the significance of arrowhead in FET symbol?
5. Why FET is called unipolar device
6. Define VVR.
7. Why MOSFET is preferred than FET?
8. What are the differences between FET & MOSFET?
9. What are the applications of FET?
10.
Why FET is called us voltage controlled device?
EX NO:
EX NO: 9
DATE:
DATE:

Aim:

CHARACTERISTICS OF UJT

To plot VI Characteristics of UJT and to calculate its intrinsic

stand off ratio.

Equipments Required:
1. One UJT (2N2646), 2. Two Resistors (1K), 3. Regulated dual
power supply (0-30) V,4. Voltmeters MC (0-30) V, 5. Ammeter
MC (0-25) ma, 6. Bread board & connecting wires.
TEST EQUIPMENTS REQUIRED:
Rps, Voltmeters, Ammeter.

15

Theory:
Unijunction transistor is a negative resistance silicon
controlled device. UJT has three terminals emitter (E),
base1 (B1) &base2 (B2).
The UJT finds its main application in switching circuits
and in relaxation oscillators. It consists of an n-type Si
semiconductor bar, which is lightly doped connected
between two ohmic contacts B1 and B2. A heavily doped
P-region is diffused into the n-type bar forming a pn
junction in the middle of the base bar. A terminal is taken
out of this region & named as emitter. The emitter is
always forward biased with respect to the base 1 and
base 2 is kept at a higher +ve potential with respect to
base 1.
Insrinsic Standofff Ratio:
The equivalent circuit of UJT is shown in the fig.
From the equivalent circuit,
VB1= VBB.Rb1 = VBB
RB1+RB2
The diode firing takes place when VE>(VB1+VD)
Where VD is voltage drop across diode. The emitter firing
potential is given by,
Vp= VBB+VD
where VD is 0.7Vs
=Vp-VD
VBB
PROCEDURE:
1.
Connections are given as per the circuit diagram.
2.
The voltage across B1and B2 (VB1B2) is kept constant (say
5v), emitter voltage VB1E is varied insteps & the
corresponding IE values are tabulated.
3.
The above procedure is repeated for VB1B2=10V.
16

4.
5.

Graph is plotted between VB1E and IE for a constant value of

VB1B2.
From the graph, peak voltage & valley voltage is obtained.

CIRCUIT DIAGRAM:

1K

IE(0 25)mA

1K
+

B2

+
E
-

RPS
( 0 30 )V

2N26466

Vb1b2(0 30
)V

B1

RPS
( 0 30 )V

Vb1e(0 30)V

PIN DIAGRAM

B1
E

C B2

MODEL GRAPH

VB1E
( V)

VB1B2=Constant
17

IE (mA)

RESULT:
Thus the static emitter characteristics of UJT drawn & the
following values were determined.
Peak voltage =
Peak current =
Valley voltage =
Valley current =
REVIEW QUESTIONS:
What are the applications of UJT?
Explain the negative resistance region in case of UJT?
What are other names for UJT?
What is intrinsic stand off ratio?
Define valley voltage & peak voltage?

`
EX NO: 9
DATE:

18

CHARACTERISTICS OF SCR
AIM :
To construct a
Characteristics.

circuit

using

SCR

to

draw

its

Firing

EQUIPMENTS REQUIRED:
1. One SCR(TYN410), 2. Two RESISTORS (1K),3. Two
AMMETERS (0-25mA)&(0-30mA) ,4. One VOLTMETER
(0-30)V, BREAD BOARD &CONNECTING WIRES.
TEST EQUIPMENTS REQUIRED:
RPS, VOLTMETER, AMMETERS.
THEORY:
The SCR consists of four layers of semi conductor
material alternatively P type and N type. It can be
brought of as an ordinary rectifier with a control
element .The control element is called GATE. The gate
current determines the anode to cathode voltage at
which the device starts to conduct.
It means that gate terminal of the SCR is
controlled by the applied voltage. Once switched ON
the gate has no further control. To switch the SCR
the anode current has to be reduced below a certain
level called HOLDING CURRENT.
The SCR can be triggered ON with the gate or
amplitude triggering, pulse triggering methods. The
terms ON & OFF are used to represent the conduction

19

and blocking mode of SCR respectively open circuited

with the anode to cathode voltage made large
enough .In conduction state the SCR behaves as an
ordinary diode.
The anode to cathode voltage at which the SCR
conducts is called BREAK OVER VOLTAGE or
FORWARD BLOCKING VOLTAGE. It has great switching
speed than other devices.

CIRCUIT DIAGRAM :
1K
25)mA

1K

+ +

(0- 30)mA
A +

+
(0-30)V
-

(0-30)V

( 0-

+
A
K

(0-30)V
TYN410
G

PIN DIAGRAM:
C
G

I/O DESCRIPTION:
INPUT : dc anode-cathode voltage.
20

OUTPUT: dc anode current.

PROCEDURE:
Rig the circuit as per the diagram.
Set the firing current in IG by keeping Vak to 15V.
Breakover voltage(Vbo) is the voltage at Vak.
Adjust Vak and note down Ia to get saturation region.
Constant voltage
corresponding to
this point is
latching current.
Open gate terminal &Slowly reduce Vak insteps and
note down the current.
Current at this point is called holding current.
TABULAR COLUMN:

I
VAK=
v

(mA)
IA (mA)

VAK=
v

(mA)
IA (mA)

MODEL GRAPH:

IF (mA)

IH

VBO

VF (V)

21

RESULT:
The forward and reverse characteristic of the SCR is
drawn.
Forward break over voltage =
V
Holding current
=
mAmp
Holding Voltage
=
V

REVIEW QUESTIONS:
What is an SCR?
What are the methods to trigger ON SCR?
What is meant by break over voltage of SCR?
What is meant by holding current and latching current in SCR?
Is SCR a unidirectional or bidirectional device.
What is meant by Valley Point and Peak point
After triggering an SCR, the gate pulse is removed. What is the
state (ON or OFF) of the device at this condition? Justify our
answer

22