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DATA SHEET
TEA6842H
New In Car Entertainment (NICE)
extended car radio
Product specification
2003 Dec 19
Philips Semiconductors
Product specification
TEA6842H
CONTENTS
1
FEATURES
GENERAL DESCRIPTION
ORDERING INFORMATION
BLOCK DIAGRAM
PINNING
FUNCTIONAL DESCRIPTION
7.1
7.1.1
7.1.2
7.1.3
7.2
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.3
7.3.1
7.3.2
7.3.3
7.3.4
7.3.5
7.4
7.5
7.6
7.7
Oscillators
VCO
Crystal oscillator
PLL
FM signal channel
DAA
FM I/Q mixer
FM keyed AGC
FM IF amplifiers
FM demodulator
FM MPX soft mute
Ultrasonic noise detector
AM signal channel
AM tuner
AM RF AGC and IF2 AGC
AM AF or IF2 switch
AM soft mute
AM noise blanker
FM and AM level detector
Input for external mute
Buffer output for weather band flag
Test mode
11
AC CHARACTERISTICS
12
I2C-BUS PROTOCOL
12.1
12.1.1
12.1.2
12.1.3
12.1.4
12.2
12.2.1
12.2.2
12.2.3
12.2.4
12.2.5
12.2.6
12.2.7
12.2.8
12.2.9
I2C-bus specification
Data transfer
I2C-bus pull-up resistors
Frequency setting
Default settings
I2C-bus protocol
Data transfer mode and IC address
Write mode: data byte 1
Write mode: data byte 2
Write mode: data byte 3
Write mode: data byte 4
Write mode: data byte 5
Write mode: data byte 6
Write mode: data byte 7
Read mode: data byte 1
13
14
INTERNAL CIRCUITRY
15
PACKAGE OUTLINE
16
SOLDERING
16.1
16.2
16.3
16.4
16.5
17
18
DEFINITIONS
LIMITING VALUES
19
DISCLAIMERS
THERMAL CHARACTERISTICS
20
10
DC CHARACTERISTICS
2003 Dec 19
Philips Semiconductors
Product specification
TEA6842H
FEATURES
GENERAL DESCRIPTION
ORDERING INFORMATION
TYPE
NUMBER
TEA6842H
2003 Dec 19
PACKAGE
NAME
LQFP80
DESCRIPTION
plastic low profile quad flat package; 80 leads;
body 12 12 1.4 mm
VERSION
SOT315-1
Philips Semiconductors
Product specification
TEA6842H
PARAMETER
VDDA(n)
IDDA(tot)
VDDA5
IDDA5
VDDD
IDDD
fAM(ant)
AM input frequency
CONDITIONS
MIN.
TYP.
MAX.
UNIT
8.5
45
60
69
mA
39
50
59
mA
4.75
5.25
6.5
9.3
11.2
mA
12.7
17.4
22.1
mA
4.75
5.25
FM mode
18
23
28
mA
AM mode
18
23
28
mA
LW
0.144
0.288
MHz
MW
0.522
1.710
MHz
SW
5.85
9.99
MHz
fFM(ant)
FM input frequency
65
108
MHz
fFM(WB)(ant)
162.4
162.55
MHz
Tamb
ambient temperature
40
+85
2003 Dec 19
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42
43
44
45
46
VDDA4
OSCFDB
VCOGND OSCTNK
47
48
49
51
50
39
38
AMAFIF2
TRDSMUTE
53
54
55
I2Cbus
SEQUENTIAL
CIRCUIT FOR
RDS UPDATING
VCO
ANTENNA
DAA
AFHOLD
AFSAMPLE
RDSMPX
56
TUSN
VDDA5 VDDA6
FMMPX
57
58
59 60 61
SOFT MUTE
POWER
SUPPLY
MUTE
AM DETECTOR
62
USNBUF
TUNING SYSTEM
AM
10.25 MHz
AM IF2
T1FMAGC
T2FMAGC
IFMAGC
WBSW
FMMIXIN2
RFGND
35
IF
COUNT
64
SCL
65
66
WX
TEA6842H
34
33
31
N1
2
90
FM
I/Q MIXER
30
AM
IF AGC
SOFT
MUTE
LEVEL
DAA
WB
FLAG
Vref(FMMIX)
SDA
I2C-BUS
FM
AGC
29
67
AM-NOISE
DETECTOR
90
PEAK/
AVERAGE
68
AM
LEVEL
BLANK
PULSE
69
70
71
IAMAGC
T2AMAGC
T1AMAGC
28
27
26
N2
5/10
AM
RF AGC
FM
LIMITER/
LEVEL
AM
MIXER 2
72
CRYSTAL
OSCILLATOR
73
74
AMMIX1IN1
AMMIX1IN2
AMAGCBUF
22
21
75
23
IFAMP 1
AM
MIXER 1
76
IFAMP 2
77
AGC
BUFFER
78
19
18
17 16
14
12
11
10
79
MIX1OUT1
IFAMP1IN
VDDA1
Coffset
IFAMP1OUT
IFAMP2DEC
IFAMP2IN
IMUTEREF
FMLIMIN
IF1GND
AMIF2IN
AMIF2DEC
AMNBHOLD
IFAMP2OUT
CAGC
FMLIMDEC
QDET2
CAFC
Vlevel
XTAL1
XTALGND
XTAL2
USNSENS
TMUTE
IREF
AMMIX2OUT1
AMMIX2OUT2
n.c.
TEA6842H
VDDA2
IFAMP1DEC
QDET1
MIX1OUT2
IF2GND
Product specification
20
MUTE
ULTRASONIC
NOISE
DETECTOR
DEMODULATOR
FMMIXIN1
37
36
63
FM IF
I2C-bus
DAAOUT
40
CPOUT
BLOCK DIAGRAM
DAATD
Vtune
Philips Semiconductors
2003 Dec 19
DGND
DAAIN
Philips Semiconductors
Product specification
TEA6842H
PINNING
SYMBOL
PIN
DESCRIPTION
FMLIMDEC
FM limiter decoupling
FMLIMIN
AMIF2DEC
IFAMP2OUT
AMNBHOLD
AMIF2IN
AM IF2 input (450 kHz) for demodulator AGC and AM level detector
IF1GND
AM IF1 ground
IFAMP2IN
Coffset
IMUTEREF
10
IFAMP2DEC
11
IFAMP1OUT
12
n.c.
13
not connected
IFAMP1IN
14
n.c.
15
not connected
VDDA1
16
IFAMP1DEC
17
MIX1OUT1
18
MIX1OUT2
19
VDDA2
20
AMAGCBUF
21
AMMIX1IN2
22
AM mixer 1 input 2
AMMIX1IN1
23
AM mixer 1 input 1
n.c.
24
not connected
n.c.
25
not connected
T1AMAGC
26
T2AMAGC
27
IAMAGC
28
Vref(FMMIX)
29
FMMIXIN1
30
FM RF mixer input 1
RFGND
31
RF ground
n.c.
32
not connected
FMMIXIN2
33
FM RF mixer input 2
WBSW
34
IFMAGC
35
T2FMAGC
36
T1FMAGC
37
DAAOUT
38
DAATD
39
temperature compensation diode for digital auto alignment circuit for antenna tank circuit
DAAIN
40
2003 Dec 19
Philips Semiconductors
Product specification
TEA6842H
PIN
DESCRIPTION
n.c.
41
not connected
Vtune
42
tuning voltage
CPOUT
43
VDDA3
44
FREF
45
VDDD
46
DGND
47
digital ground
VCOGND
48
VCO ground
OSCFDB
49
VCO feedback
OSCTNK
50
VDDA4
51
n.c.
52
not connected
AFSAMPLE
53
AFHOLD
54
TRDSMUTE
55
AMAFIF2
56
RDSMPX
57
MPX output for RDS decoder and signal processor (not muted)
FMMPX
58
VDDA5
59
TUSN
60
VDDA6
61
USNBUF
62
SDA
63
SCL
64
MUTE
65
IF2GND
66
AM IF2 ground
QDET1
67
QDET2
68
CAFC
69
Vlevel
70
XTAL1
71
crystal oscillator 1
XTALGND
72
XTAL2
73
crystal oscillator 2
USNSENS
74
TMUTE
75
IREF
76
AMMIX2OUT1
77
AMMIX2OUT2
78
CAGC
79
AM IF AGC capacitor
n.c.
80
not connected
2003 Dec 19
Philips Semiconductors
Product specification
61 VDDA6
62 USNBUF
63 SDA
64 SCL
65 MUTE
66 IF2GND
67 QDET1
68 QDET2
70 Vlevel
71 XTAL1
69 CAFC
TEA6842H
72 XTALGND
73 XTAL2
74 USNSENS
75 TMUTE
76 IREF
77 AMMIX2OUT1
78 AMMIX2OUT2
79 CAGC
80 n.c.
FMLIMDEC
60 TUSN
FMLIMIN
59 VDDA5
AMIF2DEC
58 FMMPX
IFAMP2OUT
57 RDSMPX
AMNBHOLD
56 AMAFIF2
AMIF2IN
55 TRDSMUTE
IF1GND
54 AFHOLD
IFAMP2IN
53 AFSAMPLE
Coffset
52 n.c.
51 VDDA4
IMUTEREF 10
TEA6842H
IFAMP2DEC 11
50 OSCTNK
IFAMP1OUT 12
49 OSCFDB
n.c. 13
48 VCOGND
IFAMP1IN 14
47 DGND
n.c. 15
46 VDDD
VDDA1 16
45 FREF
IFAMP1DEC 17
44 VDDA3
MIX1OUT1 18
43 CPOUT
MIX1OUT2 19
42 Vtune
41 n.c.
2003 Dec 19
DAAIN 40
DAATD 39
DAAOUT 38
T1FMAGC 37
T2FMAGC 36
IFMAGC 35
WBSW 34
FMMIXIN2 33
n.c. 32
RFGND 31
FMMIXIN1 30
Vref(FMMIX) 29
IAMAGC 28
T2AMAGC 27
T1AMAGC 26
n.c. 25
n.c. 24
AMMIX1IN1 23
AMMIX1IN2 22
AMAGCBUF 21
VDDA2 20
MHC359
Philips Semiconductors
Product specification
TEA6842H
If the keyed AGC function is activated, the AGC function is
keyed by the narrow band level (IF).
FUNCTIONAL DESCRIPTION
7.1
7.1.1
Oscillators
The AGC PIN diode drive can be set via the I2C-bus to
local function for search tuning.
VCO
7.2.4
FM IF AMPLIFIERS
CRYSTAL OSCILLATOR
7.2.5
FM DEMODULATOR
7.2.6
7.2.7
7.2.1
FM signal channel
7.3
DAA
7.3.1
AM TUNER
FM I/Q MIXER
7.3.2
7.3.3
FM KEYED AGC
AM AF OR IF2 SWITCH
2003 Dec 19
AM signal channel
7.2.3
PLL
Philips Semiconductors
Product specification
TEA6842H
7.5
AM SOFT MUTE
7.3.5
7.6
AM NOISE BLANKER
7.4
7.7
Test mode
8 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDDA1
0.3
+10
VDDA2
0.3
+10
VDDA3
0.3
+10
VDDA4
0.3
+10
VDDA5
0.3
+6.5
VDDA6
0.3
+10
VDDD
0.3
+6.5
VDD8.5-DD5
0.3
Tstg
storage temperature
55
+150
Tamb
ambient temperature
Ves
note 1
40
+85
note 2
200
+200
note 3
2000
+2000
Notes
1. To avoid damages and wrong operation it is necessary to keep all 8.5 V supply voltages at a higher level than any
5 V supply voltage. This is also necessary during power-on and power-down sequences. Precautions have to be
provided in such a way that interferences can not pull down the 8.5 V supply below the 5 V supply.
2. Machine model (R = 0 , C = 200 pF).
3. Human body model (R = 1.5 k, C = 100 pF).
2003 Dec 19
10
Philips Semiconductors
Product specification
TEA6842H
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
54
K/W
in free air
10 DC CHARACTERISTICS
VMIX1OUT = VAMMIX2OUT = VDDA(n) = 8.5 V; VDDA5 = 5 V; VDDD = 5 V; Tamb = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply voltage
VDDA(n)
8.5
VMIX1OUT;
VAMMIX2OUT
8.5
VDDA5
4.75
5.25
VDDD
4.75
5.25
18
23
28
mA
IDDA1
11
13
15
mA
IDDA2
4.2
5.2
6.2
mA
IDDA3
2.3
3.6
mA
IDDA4
5.2
6.5
7.8
mA
IDDA5
6.5
9.3
11.2
mA
IDDA6
16
20
24
mA
IMIX1OUT1
4.8
7.2
mA
IMIX1OUT2
4.8
7.2
mA
data byte 5:
bit TMS3 = 1
18
23
28
mA
IDDA1
240
IDDA2
1.6
2.4
mA
IDDA3
1.3
1.7
2.1
mA
IDDA4
6.5
mA
IDDA5
12.7
17.4
22.1
mA
IDDA6
15
19
23
mA
IMIX1OUT1
4.8
7.2
mA
IMIX1OUT2
4.8
7.2
mA
2003 Dec 19
11
data byte 5:
bit TMS3 = 1
Philips Semiconductors
Product specification
TEA6842H
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IAMMIX2OUT1
3.6
4.5
5.4
mA
IAMMIX2OUT2
3.6
4.5
5.4
mA
4.25
4.5
Ro
output resistance
11
13
Io(max)
100
+100
nA
11 AC CHARACTERISTICS
VMIX1OUT = VAMMIX2OUT = VDDA(n) = 8.5 V; VDDA5 = 5 V; VDDD = 5 V; Tamb = 25 C; see Figs 15 and 16; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
248.2
MHz
101
dBc
90
97
dB
92
99
dB
20.5
MHz
500
fosc
oscillator frequency
C/N
carrier-to-noise ratio
RR
f osc
ripple rejection -----------f osc
oscillator frequency
Ri
Ci
input capacitance
10
12
pF
Vo(osc)(rms)
oscillator output
voltage (RMS value)
240
350
500
mV
C/N
carrier-to-noise ratio
112
LW and MW
10
SW
VXTAL1 VXTAL2 = 1 mV
Oscillator divider N1
N1
FM mode
Oscillator divider N2
N2
2003 Dec 19
AM mode
12
dBc
-----------Hz
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Synthesizer
PROGRAMMABLE DIVIDER
Nprog
programmable divider
ratio
512
32767
Nstep
programmable divider
step size
205
fref = 50 kHz
410
fref = 25 kHz
820
fref = 20 kHz
1025
fref = 10 kHz
2050
crystal oscillator
divider ratio
300
Isource(cp1)l
300
Isink(cp1)h
mA
Isource(cp1)h
mA
Isink(cp2)
130
Isource(cp2)
130
2003 Dec 19
13
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
mA
Isource(cp3)
mA
10
+10
nA
8.5
Vi(cp)
VDAAIN = 0.4 to 8 V
0.5
Vo(max)
8.5
Vo
0.3
1.7
6.2
6.5
6.8
Vo(n)
30
100
Vo(T)
Tamb = 40 to +85 C;
data byte 3 = 10101011
+8
mV
Vo(step)
n = 0 to 127; FM mode;
VDAAOUT < 8 V; VDAAIN = 2 V;
VDAATD = 0.45 V
0.5VLSB
VLSB
1.5VLSB
mV
Vo(sink)
VLSB
+VLSB
Vo(source)
VLSB
+VLSB
2003 Dec 19
VDAAIN = 4 V; IL = 50 A
14
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
tst
20
30
RR
ripple rejection
V DAAOUT
-----------------------V DDA3
50
dB
CL
270
pF
compensation diode
source current
50
40
30
TCsource
temperature
coefficient of
compensation diode
source current
300
+300
bit
10
----------K
Tcount(IF)
IF counter period
ms
20
ms
10
Rprecount
FM IF counter
prescaler ratio
100
VFMLIMIN(sens)(rms)
FM sensitivity voltage
(RMS value)
FM mode
30
100
counter result
(decimal)
92
214
prescaler ratio = 10
152
92
VAMIF2IN(sens)(rms)
AM sensitivity voltage
(RMS value)
AM mode; m = 0
50
100
counter result
(decimal)
133
40
2003 Dec 19
15
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
crystal oscillator
divider ratio
272
fref
75.368
kHz
80
130
200
mV
Vo(p-p)
AC output voltage
(peak-to-peak value)
VO
DC output voltage
3.2
3.4
3.7
Ro
output resistance
50
RL(min)
minimum load
resistance for first
I2C-bus address
375
mV
500
mV
625
mV
750
mV
280
380
500
mV
AM signal channel
RF AGC STAGE INPUTS
Pin AMIF2IN
Vi(IF2)
Vo = 2.8 V
11
15
19
mA
Isink
FM mode
mA
Ro
output resistance
Io = 1 A
Co
AM AGC current
generator output
capacitance
pF
buffer
transconductance
AM mode;
1 V < VT1AMAGC < 4 V
150
166
185
Isink(max)
open-collector; AM mode;
VT1AMAGC = 4 V
450
500
560
Isource(max)
maximum source
current
30
Vo(n)
AM mode;
VDDA1 VAMAGCBUF = 1 V;
B = 400 Hz to 20 kHz
10
15
2003 Dec 19
16
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
input resistance
15
25
35
Ci
input capacitance
2.5
5.5
pF
VI
DC input voltage
2.3
2.7
3.1
Vi(max)
maximum input
voltage
1 dB compression point of
AM mixer 1 output
(peak-to-peak value)
500
mV
Vi(n)(eq)
5.8
nV
-----------Hz
output resistance
100
Co
output capacitance
pF
Vo(max)(p-p)
maximum output
voltage
(peak-to-peak value)
12
15
gm(conv)
conversion
transconductance
I MIX1OUT
---------------------------V AMMIX1IN
2.0
2.55
3.2
mA
--------V
gm(conv)(T)
conversion
transconductance
variation with
temperature
g m ( conv )
----------------------------------g m ( conv ) T
9 104
K1
IP3
3rd-order
intermodulation
135
138
dBV
IP2
2nd-order
intermodulation
RL = 2.8 k
170
dBV
noise figure of AM
mixer 1
4.5
7.1
dB
Ibias
4.8
7.2
mA
AM mode
input resistance
270
330
390
Ci
input capacitance
pF
VI
DC input voltage
2.4
2.8
3.2
Vi(max)(p)
maximum input
voltage (peak value)
1.1
1.4
2003 Dec 19
1 dB compression point of
AM mixer 2 output
(peak-to-peak value)
17
Philips Semiconductors
Product specification
PARAMETER
equivalent input noise
voltage
TEA6842H
CONDITIONS
Rgen = 330 ; RL = 4 k
MIN.
TYP.
MAX.
UNIT
15
22
nV
-----------Hz
output resistance
100
Co
output capacitance
pF
Vo(max)(p-p)
maximum output
voltage
(peak-to-peak value)
12
15
gm(conv)
conversion
transconductance
I AMMIX2OUT
------------------------------V IFAMP1IN
1.3
1.6
1.9
mA
--------V
gm(conv)(T)
conversion
transconductance
variation with
temperature
g m ( conv )
----------------------------------g m ( conv ) T
9 104
K1
IP3
3rd-order
intermodulation
RL = 4 k; f = 300 kHz
134
137
dBV
IP2
2nd-order
intermodulation
RL = 4 k
170
dBV
noise figure of AM
mixer 2
16
19.5
dB
Ibias
AM mode
3.6
4.5
5.4
mA
IL
FM mode
50
VDDA1 = 8.5 V
14
30
VAGC(stop)
VAGC(ctrl)
VAMIF2IN = 1 mV
4.1
4.3
4.7
AGC
AGC range
89
dB
Ri
input resistance
1.8
2.2
Ci
input capacitance
pF
Vi
input voltage
22
37
12
Vsens(rms)
2003 Dec 19
sensitivity voltage
(RMS value)
audio attenuation = 10 dB
45
65
(S+N)/N = 46 dB
600
900
18
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
minimum AM IF2
output level
(RMS value)
1.5
4.5
mV
Vo(max)(rms)
maximum AM IF2
output level
(RMS value)
130
180
230
mV
Vo(rms)
AM AF output voltage
level (RMS value)
235
285
340
mV
Ro
output resistance
500
Co
output capacitance
pF
ZL
load impedance
RR
ripple rejection
100
10
30
40
dB
54
60
70
dB
0.5
1.25
2.5
1.75
3.5
1000
1500
ms
800
1200
ms
1200
1800
ms
VAMIF2IN = 10 V to 1 V
0.1
0.35
0.8
2.2
THD
total harmonic
distortion
tsw
FM to AM switching
time
VAMIF2IN = 100 V;
CAGC = 22 F
tst
AM demodulator AGC
settling time
CAGC = 22 F
level output DC
voltage
Vlevel
40
53
70
mV
Vlevel(slope)
800
1000
1200
mV
--------------20 dB
2003 Dec 19
19
Philips Semiconductors
Product specification
PARAMETER
Vstep
Blevel
TEA6842H
CONDITIONS
VAMIF2IN = 1.4 mV
MIN.
TYP.
MAX.
UNIT
55
75
95
mV
--------------20 dB
bandwidth of level
output voltage
200
300
kHz
Ro
output resistance
500
RR
V level
ripple rejection ---------------V DDA6
40
dB
DC output voltage
4.4
4.75
5.25
tsup
suppression time
7.5
10
ftrigger
trigger sensitivity
1000
Hz
100
Hz
100
Hz
30
45
60
VAGC
2.1
2.45
2.85
mV
mV
12
mV
16
mV
3.8
4.1
4.4
VIFMAGC = 2.5 V;
VT2FMAGC = VO(ref) 0.5 V; data
byte 5: bit 5 = 0, bit 6 = 0,
bit 7 = 0; data byte 4: bit 1 = 0
10.5
14
mA
14
10.5
mA
FM signal channel
RF AGC (FM DISTANCE MODE)
source resistance
VO(ref)
DC output reference
voltage
Isource(AGC)(max)
2003 Dec 19
20
Philips Semiconductors
Product specification
PARAMETER
AGC source current
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
AM mode
19
14
10
mA
4.4
3.7
2.7
mA
600
750
900
mV
FM RF MIXER
maximum RF input
voltage
1 dB compression point of
FM mixer output voltage
(peak-to-peak value)
70
140
mV
Vi(n)(eq)
2.6
3.1
nV
-----------Hz
Ri
input resistance
1.4
2.8
4.2
Ci
input capacitance
pF
100
3.5
pF
4.8
7.2
mA
FM mode
6.5
7.1
7.9
AM mode
2.7
3.1
3.4
output resistance
Co
output capacitance
Ibias
Vo(max)(p-p)
maximum output
voltage
(peak-to-peak value)
FM mode
reference voltage
FM mixer
gm(conv)
conversion
transconductance
I MIX1OUT
----------------------V FMMIXIN
8.5
13
18
mA
--------V
gm(conv)(T)
conversion
transconductance
variation with
temperature
g m ( conv )
----------------------------------g m ( conv ) T
1 103
K1
noise figure
4.6
dB
Rgen(opt)
optimum generator
resistance
180
240
300
2003 Dec 19
21
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
116
119
dBV
25
30
dB
22
30
dB
RL = 330 ; VIFAMP1IN = 1 mV
8.5
10.5
12.5
dB
noise figure
10
13
dB
3rd-order
intermodulation
117
120
dBV
IP3
3rd-order
intermodulation
IRR
gain
V IFAMP1OUT
-----------------------------V IFAMP1IN
F
IP3
IF AMPLIFIER 1
maximum input
voltage (peak value)
1 dB compression point of
IF amplifier 1 output voltage
(peak value)
250
mV
Vi(n)(eq)
10
nV
-----------Hz
Ri
input resistance
270
330
390
Ci
input capacitance
pF
maximum output
voltage (peak value)
1.2
1.5
Ro
output resistance
270
330
390
Co
output capacitance
pF
6.5
8.5
10.5
dB
IF AMPLIFIER 2
RL = 330 ; VIFAMP2IN = 1 mV
gain
V IFAMP2OUT
-----------------------------V IFAMP2IN
noise figure
13
15
dB
IP3
3rd-order
intermodulation
127
130
dBV
maximum input
voltage (peak value)
1 dB compression point of
IF amplifier 2 output voltage
(peak value)
500
mV
Vi(n)(eq)
10
13
nV
-----------Hz
2003 Dec 19
22
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Ri
input resistance
270
330
390
Ci
input capacitance
pF
1.2
1.5
maximum output
voltage (peak value)
Ro
output resistance
270
330
390
Co
output capacitance
pF
input resistance
10
12
14
Ci
input capacitance
pF
Vstart(lim)(rms)
10
15
Vo(sens)(rms)
10
15
Vstart(lim)(rms)
start of limiting of
FM MPX output
voltage (RMS value)
Vo(sens)(rms)
Rgen = 165 ;
(S+N)/N = 26 dB
50
75
10
15
Rgen = 165 ;
(S+N)/N = 26 dB
10
15
(S+N)/N = 46 dB
50
75
40
50
60
mV
(S+N)/N = 46 dB
VFMLIMIN = 20 V to 1 V
180
230
280
mV
(S+N)/N
70
73
dB
THD
total harmonic
distortion
0.4
0.75
Vo(rms)
2003 Dec 19
23
Philips Semiconductors
Product specification
PARAMETER
AM suppression
V o(rms)
--------------------------V o(AM)(rms)
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
20
30
dB
VFMLIMIN = 70 to 500 V
30
40
dB
50
60
dB
30
40
dB
Io(max)
maximum output
current
100
Ro
output resistance
500
RL
load resistance
20
CL
load capacitance
50
pF
bandwidth
CL = 0; RL > 20 k
200
300
kHz
PSRR
40
dB
180
230
280
mV
150
230
310
mV
VFMLIMIN = 300 mV to 1 V
FM MPX output
voltage (RMS value)
(S+N)/N
66
70
dB
THD
total harmonic
distortion
0.4
0.75
AM
AM suppression
V o(rms)
--------------------------V o(AM)(rms)
30
dB
VFMLIMIN = 30 to 70 V
VFMLIMIN = 70 to 500 V
30
40
dB
50
60
dB
VFMLIMIN = 300 mV to 1 V
30
40
dB
Io(max)
maximum output
current
100
Ro(max)
maximum output
resistance
500
RL(min)
minimum load
resistance
20
CL(max)
maximum load
capacitance
50
pF
bandwidth
200
kHz
2003 Dec 19
CL = 0; RL > 20 k
24
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
40
dB
tsw
AM to FM switching
time
VFMLIMIN = 100 V
100
150
ms
dB
dB
9.5
dB
11
dB
14
dB
18
dB
25
dB
39
dB
+1
dB
150
+150
mV
Soft mute
mute
mute attenuation
mute(off)
mute off
Voffset(DC)
DC offset created by
soft mute on
pin FMMPX
V = Vmuted Vnotmuted
VFMLIMIN = 10 mV;
VTMUTE = 300 mV
VFMLIMIN = 10 mV;
VTMUTE = 300 mV;
data byte 7 = XXXXX111
mute voltage
VFMLIMIN = 0 to 1 V
Voffset
VFMLIMIN = 0 to 1 V
200
+200
mV
Idch
discharge current
2.5
3.5
4.5
Ich
charge current
4.5
3.5
2.5
VTMUTE(start)
300
450
600
mV
400
550
700
mV
450
630
810
mV
520
720
920
mV
580
800
1020
mV
640
890
1140
mV
680
980
1280
mV
500
40
dB
output resistance of
level output
RR
2003 Dec 19
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS mute
mute
muting depth
Voffset(DC)
60
80
dB
30
+30
mV
no mute
5.7
mute
1.1
Idch
discharge current
24
32
38
Ich
charge current
38
32
24
ILI
mute
10
+10
nA
1.0
1.2
1.4
mA
1.0
1.2
1.4
mA
mute
1.5
VTRDSMUTE
mute voltage
Isource
source current
Ri
input resistance
no mute
Vo = 0 to 5 V
30
50
70
100
28
32
dB
VFMLIMIN = 10 to 80 V
0.1
VFMLIMIN = 80 V to 800 mV
10
30
mV
VFMLIMIN = 10 to 80 V
0.240
VFMLIMIN = 80 V to 800 mV
25
500
mV
Demodulator AFC
OUTPUT: PIN RDSMPX
GAFC
Voffset(DC)
residual DC offset
Ldemod = 6%
2003 Dec 19
26
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vi = 1.4 to 4.1 V
90
120
150
Ich
Vi = 1.4 to 4.1 V
150
120
90
VFMLIMIN = 10 V to 1 V
0.1
0.35
0.8
1.4
2.4
level output DC
voltage
Vlevel
40
53
70
mV
Vlevel(slope)
800
1000
1200
mV
--------------20 dB
Vstep
VFMLIMIN = 1 mV
55
75
95
mV
--------------20 dB
Vlevel(T)
VFMLIMIN = 1 mV
103
+103
K1
Blevel
bandwidth of level
output voltage
200
300
kHz
Isource
300
Isink
50
Ro
output resistance
500
RR
ripple rejection
40
dB
+5
Vo(FM)(max)
maximum output
voltage for FM mode
0.5
Vo(WB)
5.1
6.9
2003 Dec 19
27
Philips Semiconductors
Product specification
PARAMETER
TEA6842H
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1000
Ri(shunt)
internal shunt
resistance to ground
50
Vo(FM)(max)
maximum output
voltage for FM mode
0.35
Vo(WB)
gain control
G USN
-------------------------------R USNSENS
0.09
0.12
0.15
dB
-------k
50
50 kHz attenuation of
input filter
fmod = 50 kHz;
RUSNSENS = 82 k;
VRDSMPX(AC) = 90 mV (RMS)
60
dB
ultrasonic noise
detector sensitivity
control pin source
current
39
33
27
fmod
3 dB frequency
ultrasonic noise
detector input filter
CTUSN < 10 pF
300
450
600
kHz
Iatt
30
37
44
Idec
VTUSN = 4 V; VRDSMPX(AC) = 0 V; 14
RUSNSENS = 82 k
11
Vo
FM mode; RUSNSENS = 82 k
VRDSMPX(AC) = 0 V
4.5
5.0
5.5
VRDSMPX(AC) = 90 mV (RMS);
fmod = 750 kHz
1.5
VTMUTE = 700 mV
17
20
23
dB
VTMUTE = 2.5 V
34
39
44
dB
VTMUTE = 4 V
44
50
56
dB
VRDSMPX(AC) = 0 V;
RUSNSENS = 82 k
4.5
4.75
5.0
gain
V USNBUF ( DC )
20 log --------------------------------------V RDSMPX ( AC )
Vo(max)
2003 Dec 19
maximum output
voltage
28
Philips Semiconductors
Product specification
PARAMETER
minimum output
voltage
TEA6842H
CONDITIONS
TYP.
MAX.
UNIT
1.5
0.5
VRDSMPX(AC) = 90 mV (RMS)
Vo(buf)
MIN.
FM mode; RUSNSENS = 82 k
VRDSMPX(AC) = 0 V
4.5
4.75
5.0
VRDSMPX(AC) = 90 mV (RMS);
fmod = 750 kHz
1.5
Isource(max)
maximum source
current
1500
1000
800
Isink(max)
200
300
450
Vo(n)(buf)
500
RR
34
40
dB
Voffset(buf)
50
100
mV
Ro
output resistance
150
200
250
CL(max)
maximum load
capacitance
100
pF
Notes
n
1. DAA conversion gain formula: V DAAOUT = 2 0.75 ---------- + 0.25 ( V DAAIN + V DAATD ) V DAATD ; where
128
n = 0 to 127.
2. Pin FREF: Rext = 68 k connected to ground activates the 2nd I2C-bus address.
3. The AM AGC transconductance buffer delivers a sink current which is proportional to the voltage at pin T1AMAGC.
2003 Dec 19
29
Philips Semiconductors
Product specification
TEA6842H
MHC360
10
8
Vlevel
(V)
7
THD
(%)
6
20
10
VAMAFIF2
(dB)
0
(1)
(2)
30
4
(3)
40
3
(4)
50
2
(5)
60
70
103
(6)
102
101
10
0
103
102
VAMIF2IN (mV)
(1)
(2)
(3)
(4)
(5)
(6)
Output voltage at AM audio output: m = 0.3; fmod = 1 kHz; soft mute off.
Output voltage at AM audio output: m = 0.3; fmod = 1 kHz; soft mute on.
Noise voltage at AM audio output: unweighted B = 2.5 kHz; soft mute off.
Noise voltage at AM audio output: unweighted B = 2.5 kHz; soft mute on.
Level detector output voltage for standard setting of level DAA.
THD of AM audio output voltage: m = 0.8; fmod = 1 kHz.
2003 Dec 19
30
Philips Semiconductors
Product specification
TEA6842H
MHC361
Vlevel
(V)
5
4
(1)
3
(2)
(3)
0
103
102
101
102
10
103
VAMIF2IN (mV)
Trep
70
Vlevel
71
Vpulse
TEA6842H
73
1 k
VXTAL2
77
test signal
1 k
78
18
50
19
8.5 V
14
oscilloscope,
counter
4.7 nF
100
Vpulse
100
VIFAMP1IN
MHC362
8.5 V
VIFAMP1IN = 4 V.
VXTAL2 = 3 V.
Test signal: Trep = 2 ms, tr < 50 ns, tf < 50 ns and duty factor 50%.
2003 Dec 19
31
Philips Semiconductors
Product specification
TEA6842H
MHC363
Vlevel
(V)
5
4
(1)
3
(2)
2
(3)
0
103
102
101
2003 Dec 19
32
10
102
103
VIFAMP2IN-IMUTEREF
(mV)
Philips Semiconductors
Product specification
TEA6842H
MHC364
10
(1)
9
Vlevel
8 (V)
(2)
THD
(%)
7
handbook,
full
V
; pagewidth
FMMPX
VRDSMPX
(dB) 0
10
20
30
(3)
40
(4)
50
60
2
(5)
70
1
(6)
80
103
102
101
10
0
103
102
VFMLIMIN (mV)
(1)
(2)
(3)
(4)
(5)
(6)
Output voltage for not muted RDSMPX: f = 22.5 kHz; fmod = 1 kHz.
Output voltage for muted FMMPX: f = 22.5 kHz; fmod = 1 kHz.
Noise voltage at not muted RDSMPX: unweighted B = 250 Hz to 15 kHz with de-emphasis 75 s.
Noise voltage at muted FMMPX: unweighted B = 250 Hz to 15 kHz with de-emphasis 75 s.
Level voltage for standard setting of level DAA; data byte 6 = 84H.
THD of FMMPX and RDSMPX: f = 22.5 kHz; fmod = 1 kHz.
Fig.7 (S+N)/N, THD and level voltage for FM mode as a function of FM demodulator input voltage.
2003 Dec 19
33
Philips Semiconductors
Product specification
TEA6842H
MHC366
handbook, halfpage
VFMMPX
(dB)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
20
Mute start:
(1) MD[2:0] = 000.
(2) MD[2:0] = 001.
(3) MD[2:0] = 010.
(4) MD[2:0] = 011.
(5) MD[2:0] = 100.
(6) MD[2:0] = 101.
(7) MD[2:0] = 110.
30
0
0.4
0.8
1.6
1.2
VTMUTE (V)
Mute start adjustment range, mute slope = 100 and VFMLIMIN = 10 mV.
MHC365
handbook, halfpage
(1)
(2)
VFMMPX
(3)
(dB)
(4)
20
(5)
(6)
(7)
40
Mute slope:
(1) MS[2:0] = 000.
(2) MS[2:0] = 001.
(3) MS[2:0] = 010.
(4) MS[2:0] = 011.
(5) MS[2:0] = 100.
(6) MS[2:0] = 101.
(7) MS[2:0] = 110.
(8) MS[2:0] = 111.
(8)
60
0
0.3
0.6
1.2
0.9
VTMUTE (V)
Mute slope adjustment range, mute start = 100 and VFMLIMIN = 10 mV.
2003 Dec 19
34
Philips Semiconductors
Product specification
TEA6842H
MHC367
45
handbook, halfpage
GUSN
(dB)
40
35
30
25
0
40
80
120
160
RUSNSENS (k)
AF = 1
AF channel
AF = 1
main channel
I2C-bus
t1
t3
t2
HOLD
FMMPX
SAMPLE
8
t (ms)
MHC368
Hold signal is used to hold the quality information for signal processing of the main channel during the alternative frequency jumps.
Quality measurement can be carried out during sample = 1.
t1 is the internal clock related logic delay of 100 s.
t2 should be >1.1 ms to ensure correct loading of PLL for the main channel.
t3 should be >0 to ensure inaudible update; t3 < 0 extends the mute period.
2003 Dec 19
35
Philips Semiconductors
Product specification
TEA6842H
t1
t2
t1
FMMPX
SAMPLE
HOLD
0
0
n+1
t (ms)
MHC369
2003 Dec 19
36
Philips Semiconductors
Product specification
TEA6842H
When writing to the transceiver by using the STOP
condition before completion of the whole transfer:
12 I2C-BUS PROTOCOL
I2C-bus specification
12.1
IC addresses:
12.1.2
12.1.3
FREQUENCY SETTING
DATA TRANSFER
12.1.4
DEFAULT SETTINGS
I2C-bus protocol
12.2
12.2.1
Table 1
Write mode
S(1)
A(2)
address (write)
Notes
1. S = START condition.
2. A = acknowledge.
3. P = STOP condition.
2003 Dec 19
37
data byte(s)
A(2)
P(3)
Philips Semiconductors
Product specification
TEA6842H
Read mode
S(1)
A(2)
data byte 1
0/1(1)
R/W(2)
address (read)
Notes
1. S = START condition.
2. A = acknowledge.
Table 3
IC address byte
IC ADDRESS
MODE
Notes
1. Defined by address pin FREF:
a) 1 = 1st IC address
b) 0 = 2nd IC address.
2. Read or write mode:
a) 0 = write operation to TEA6842H
b) 1 = read operation from TEA6842H.
WRITE MODE: DATA BYTE 1
12.2.2
Table 4
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
AF
PLL14
PLL13
PLL12
PLL11
PLL10
PLL9
PLL8
Table 5
BIT
SYMBOL
AF
6 to 0
PLL[14:8]
12.2.3
DESCRIPTION
Table 6
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
PLL7
PLL6
PLL5
PLL4
PLL3
PLL2
PLL1
PLL0
Table 7
BIT
SYMBOL
7 to 0
PLL[7:0]
2003 Dec 19
DESCRIPTION
Setting of programmable counter of synthesizer PLL. Lower byte of PLL divider
word.
38
Philips Semiconductors
Product specification
TEA6842H
Table 8
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
MUTE
DAA6
DAA5
DAA4
DAA3
DAA2
DAA1
DAA0
Table 9
BIT
SYMBOL
MUTE
6 to 0
DAA[6:0]
12.2.5
DESCRIPTION
FM audio mute. If MUTE = 0, then FM audio not muted. If MUTE = 1, then FM audio
muted; writing to programmable divider and antenna DAA enabled.
Setting of antenna digital auto alignment.
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
IFMT
RFS2
RFS1
RFS0
IFPR
BND1
BND0
AMFM
SYMBOL
DESCRIPTION
IFMT
6 to 4
RFS[2:0]
IFPR
IF counter prescaler ratio. If IFPR = 0, then IF prescaler ratio is 100. If IFPR = 1, then
IF prescaler ratio is 10.
2 and 1
BND[1:0]
Band switch. These 2 bits select in FM mode band and local or distant, see Table 13;
in AM mode band select and output of AM IF2 for AM stereo, see Table 14.
AMFM
RFS1
RFS0
fref (kHz)
100
50
25
20
10
10
10
10
2003 Dec 19
39
Philips Semiconductors
Product specification
TEA6842H
Table 13 FM mode
BND1
BND0
SELECTION
BND0
SELECTION
Note
1. In AM mode dead zone high current charge pump switched off, current of low current charge pump set to 1 mA.
WRITE MODE: DATA BYTE 5
12.2.6
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
KAGC
WBA1
WBA0
AMSM
TMS3
TMS2
TMS1
TMS0
SYMBOL
KAGC
6 and 5
WBA[1:0]
AMSM
AM soft mute. If AMSM = 0, then AM soft mute is off. If AMSM = 1, then AM soft mute
is on (default).
TMS3
In test mode charge pump 3-state. If TMS3 = 0, then 3-state off. If TMS3 = 1, then
3-state on.
TMS2
In test mode external clock for level and antenna DAA. If TMS2 = 0, then external
clock disabled. If TMS2 = 1, then external clock enabled.
1 and 0
TMS[1:0]
2003 Dec 19
DESCRIPTION
Keyed FM AGC. If KAGC = 0, then keyed FM AGC is off. If KAGC = 1, then keyed
FM AGC is on.
Wideband AGC. These 2 bits set the start value of wideband AGC. For AM,
see Table 17 and for FM, see Table 18.
In test mode setting of pin FREF. These 2 bits define the function of pin FREF,
see Table 19.
40
Philips Semiconductors
Product specification
TEA6842H
WBA0
375
500
625
750
WBA1
WBA0
12
16
TMS0
12.2.7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
LST4
LST3
LST2
LST1
LST0
LSL2
LSL1
LSL0
SYMBOL
DESCRIPTION
7 to 3
LST[4:0]
Setting of level DAA starting point. These 5 bits determine the offset of the level
detector output voltage.
2 to 0
LSL[2:0]
Setting of level DAA slope. These 3 bits determine the steepness of the level detector
output voltage.
LST4
LST3
LST2
LST1
LST0
LSL2
LSL1
LSL0
2003 Dec 19
41
Philips Semiconductors
Product specification
TEA6842H
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
MS2
MS1
MS0
MD2
MD1
MD0
SYMBOL
DESCRIPTION
7 and 6
5 to 3
MS[2:0]
2 to 0
MD[2:0]
12.2.9
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
IFC7
IFC6
IFC5
IFC4
IFC3
IFC2
IFC1
IFC0
SYMBOL
7 to 0
IFC[7:0]
2003 Dec 19
DESCRIPTION
IF counter result. These bits contain the last eight bits of the IF counter result.
42
Philips Semiconductors
Product specification
TEA6842H
PARAMETER
TYPE
MANUFACTURER
C1
L1
TOKO
L2
P7PSGAE-5078D=S
TOKO
L3
392BC-1977Z
TOKO
L4
oscillator coil
E543SNAS-02010
TOKO
L5
FM image rejection
611SNS-1066Y
TOKO
L6
FM input transformer
369INS-3076X
TOKO
L7
LQN
MURATA
L8
LQN
MURATA
L9
Air coil
TQX6238
Tele Quarz
2003 Dec 19
43
Philips Semiconductors
Product specification
TEA6842H
antenna
A
Vtune
B
fref
PLL
10 k
22
3.9 nF
1.2 k
100 nF
470
k
5V
digital
3.3 nF
2.2 k
3.3
H
22 nF
100 nF
n.c.
40
39
22 k
Vt
DGND
42
41
43
44
45
46
47
ANTENNA
DAA
38
TUNING SYSTEM
BB814
BAS16
AM
(1)
10.25 MHz
120 nH
1 F
37
L5
8.2 pF
1 nF
36
1 F
L8
470 nH
L9
47 pF
4:6
560 pF
n.c.
L6
BA779-2
8.2 pF
35
WBSW
BA779-2
6.8 H
22
3.3 H
5V
analog
47 F
FM
AGC
F
WX
34
33
32
31
30
TEA6842H
N1
2
90
FM
I/Q MIXER
WB
FLAG
RFGND
100
nF
L7
220 nH
29
H
AM-NOISE
DETECTOR
90
PEAK/
AVERAGE
22 nF
J
270
270
BAQ806
28
27
100 nF
26
22 F
100 H
680
H
21
100
pF
330 pF
1
nF
4.7 F
100
nF
IFAMP 1
AM
MIXER 1
180 pF
1 mH
220 H
5/10
220 nF
23
22
220
nF
N2
AM
RF AGC
AGC
BUFFER
P
20
19 18
17 16 15
14
n.c.
1.5 k
1.2 M
470 pF
BAV99
47
1 nF
22
nF
22
nF
22
nF
BF861C
470
k
10 k
22
SFE10.7
MS3
L1
22 nF
22
10
Q
mhc370
2003 Dec 19
44
Philips Semiconductors
Product specification
TEA6842H
8.5 V
C1
4.7 k
B
AM
AUDIO/IF
AF
AF
SAMPLE HOLD
22
RDS/ FM
MPX MPX
L4
BB156
22 nF
2.7
pF
1.8
pF
47 F
6.8 nF
50
49
51
52
3.3
H
3.3
H
100 nF
22
nF
47 F
n.c.
48
5V
analog
53
54
55
56
57
58
59 60
100 nF
61
I2Cbus
SEQUENTIAL
CIRCUIT FOR
RDS UPDATING
VCO
C
SOFT MUTE
POWER
SUPPLY
MUTE
AM DETECTOR
62
USNBUF
VDD (I2C-bus)
D
10
k
E
FM IF
I2C-
IF
AM IF2 COUNT
bus
10
k
63
I2C-BUS
SDA
64
SCL
65
MUTE
66
IF2GND
TEA6842H
AM
IF AGC
SOFT
MUTE
LEVEL
DAA
ULTRASONIC
NOISE
DETECTOR
67
H
AM
LEVEL
BLANK
PULSE
DEMODULATOR
68
4.7
k
L3
69 AFC
J
70
71
AM
MIXER 2
FM
LIMITER/
LEVEL
CRYSTAL
OSCILLATOR
47 F
72
20.5
MHz
73
82 k
74
AM/FM
LEVEL
220 nF
75
76
120
k
IFAMP 2
O
77
78
P
11
10
4 3
80
330
22
nF
220
nF
IF1GND
100
nF
SFE10.7
MS3
100
nF
100
nF
SFE10.7
MS3
SFR450F
L2
79
22 nF
22 F
22
8.5 V
mhc371
2003 Dec 19
45
220
nF
Philips Semiconductors
Product specification
antenna
input
TEA6842H
fref PLL
FM RF input
A
100
nF
B
C
Vtune
47
470
k
100 nF
3.9
nF
10 k
relay 1
2.2 k
3.3
nF
100
k
DGND
n.c.
40
relay 2
100 nF
42
41
68
k
22
nF
100 nF
relay 1
teledyne
3.3
H
22
1.2 k
43
44
45
46
47
WBSW
39
22 k
Vt
38
BB814
ANTENNA
DAA
F
AM
120
nH
10.25 MHz
(1)
1.5 to
5 pF
8.2
pF
1
nF
1 F
36
35
L9
BA779-2
47 pF
n.c.
560 pF
8.2
pF
L6
22
3.3 H
H
WX
TEA6842H
N1
2
90
FM
I/Q MIXER
WB
FLAG
RFGND
29
47 F
100 nF
FM
AGC
34
33
32
31
30
BA779-2
L7
220 nH
37
1 F
L8
470 nH
6.8
H
E
TUNING SYSTEM
BAS16
AM-NOISE
DETECTOR
90
PEAK/
AVERAGE
22 nF
L
270
270
BAQ806
BAQ800
28
27
100 nF
26
22
F
100
H
1 mH
220 H
100
pF
330
pF
680
H
1
nF
5/10
220 nF
23
220
nF
N2
AM
RF AGC
180
pF
4.7
F
21
100
nF
IFAMP 1
AM
MIXER 1
22
50
AGC
BUFFER
R
20
17
19 18
16 15
14
n.c.
1.5 k
22
nF
470 pF
BAV99
1.2 M
BF861C
1 nF
22
nF
22
nF
470
k
22 nF
L1
22
nF
47
10 k
22
22
10
SFE10.7
MS3
S
100 nF
100 nF
100 nF
304
330
AM RF
input
IF
output
2003 Dec 19
46
52
IF
input
mhc372
Philips Semiconductors
Product specification
AF
AF
SAMPLE HOLD
TEA6842H
10
AM
RDS/ FM
AUDIO/IF MPX MPX
47 F
100 nF
47 F
100 nF
47 F
100 nF
10
B
C
C1
4.7 k
D
68
k
22
68
k
100
nF
100
nF
100
nF
8.5 V
100 nF
49
50
22
nF
6.8 nF
51
100 nF
10
k
47 F
n.c.
48
10
k
47 F
1.8
pF
2.7
pF
3.3 H
3.3 H
22 nF
0
52
53
54
55
56
57
58
59 60
61
SDA
I2CSEQUENTIAL
CIRCUIT FOR
RDS UPDATING
VCO
bus
SCL
SOFT MUTE
POWER
SUPPLY
MUTE
AM DETECTOR
62
USNBUF
F
G
FM IF
IF
AM IF2 COUNT
I2Cbus
I2C-bus
interface
63 SDA
I2C-BUS
64 SCL
65
MUTE
TEA6842H
AM
IF AGC
SOFT
MUTE
LEVEL
DAA
ULTRASONIC
NOISE
DETECTOR
DGND
66 IF2GND
67
J
AM
LEVEL
BLANK
PULSE
DEMODULATOR
68
4.7
k
L3
69
AFC
47 F
L
70
M
N
AM
MIXER 2
AM/FM
LEVEL
71
FM
LIMITER/
LEVEL
CRYSTAL
OSCILLATOR
72
20.5
MHz
73
82 k
74
75
76
IFAMP 2
220 nF
120 k
77
220
nF
78
R
11
10
4 3
80
L2
79
330
22
nF
220
nF
100
nF
100
nF
IF1GND
22
100
nF
22 F
22 nF
coaxial connector
test pin
jumper
SFR
450F
SFE10.7
MS3
SFE10.7
MS3
S
100 nF
100 nF
100 nF
304
330
FM IF1
output
52
100 nF
FM IF2 AM IF2
input
input
100 nF
100 nF
304
2 k
47
FM IF2
output
330
52
2 k
limiter
input
AM IF
output
2003 Dec 19
5V
digital
10
L4
BB156
5V
analog
47
mhc373
to TEA688XH
Philips Semiconductors
Product specification
TEA6842H
PIN
AM
MIN.
FM
TYP.
MAX.
MIN.
TYP.
MAX.
FMLIMDEC
2.5
3.5
2.5
2.8
3.1
FMLIMIN
2.5
3.5
2.5
2.8
3.1
AMIF2DEC
2.4
2.7
3.2
floating
IFAMP2OUT
7.2
7.9
3.4
3.9
4.4
AMNBHOLD
4.4
4.75
5.25
8.4
AMIF2IN
2.4
2.7
3.2
IF1GND
external 0
IFAMP2IN
2.7
3.1
3.5
3.5
floating
external 0
3.4
3.8
Coffset
floating
IMUTEREF
10
IFAMP2DEC
11
3.4
3.8
2.7
3.1
3.5
IFAMP1OUT
12
7.2
7.9
3.6
4.4
2.8
3.2
2.3
2.7
3.1
2.7
3.1
IFAMP1IN
14
2.4
VDDA1
16
external 8.5
IFAMP1DEC
17
2.4
MIX1OUT1
18
external 8.5
external 8.5
MIX1OUT2
19
external 8.5
external 8.5
VDDA2
20
external 8.5
external 8.5
external 8.5
2.8
3.2
2.3
AMAGCBUF
21
external biased
AMMIX1IN2
22
2.4
AMMIX1IN1
23
external biased
T1AMAGC
26
2.8
4.6
0 (no WX)
T2AMAGC
27
2.5
2.8
3.1
floating
IAMAGC
28
external biased
Vref(FMMIX)
29
2.7
3.1
3.4
6.5
7.1
7.9
FMMIXIN1
30
1.3
1.6
2.3
2.8
3.3
RFGND
31
external 0
FMMIXIN2
33
2.8
3.3
WBSW
34
floating
2.85
floating
floating
external biased
external 0
1.3
IFMAGC
35
external biased
T2FMAGC
36
7.5
T1FMAGC
37
floating
DAAOUT
38
DAATD
39
floating
DAAIN
40
2003 Dec 19
floating
3.2
1.6
2.3
8.3
0.2
0.3
8.5
48
4 (WB)
4.5 (WB)
5 (WB)
(FM)
<0.5 (FM)
(FM)
1.5 (external
biasing)
4 (external
biasing)
3.6
4.2
4.6
0.2
8.25
0.2
1.5
8.5
Philips Semiconductors
Product specification
TEA6842H
PIN
AM
MIN.
Vtune
42
FM
TYP.
MAX.
MIN.
TYP.
MAX.
8.5
8.5
8.5
8.5
3.4
3.7
2.2
2.8
3.4
0.2
0.5
1.2 (muted)
1.7 (muted)
CPOUT
43
VDDA3
44
external 8.5
FREF
45
3.2
VDDD
46
external 5
external 5
DGND
47
external 0
external 0
VCOGND
48
external 0
external 0
OSCFDB
49
2.2
2.8
3.4
OSCTNK
50
VDDA4
51
external 8.5
AFSAMPLE
53
AFHOLD
54
open-collector
TRDSMUTE
55
1.9
external 8.5
3.4
3.7
3.2
external 8.5
0.2
0.5
2.2
2.5
0
open-collector
0.7 (muted)
56
RDSMPX
57
floating
4.3
4.6
2.6
floating
3.1
3.3
FMMPX
58
floating
3.5
VDDA5
59
external 5
external 5
TUSN
60
floating
0.5
VDDA6
61
external 8.5
external 8.5
USNBUF
62
floating
0.5
SDA
63
4.8
5.2
4.8
5.2
SCL
64
4.8
5.2
4.8
5.2
MUTE
65
floating
IF2GND
66
external 0
external 0
QDET1
67
floating
3.6
4.1
4.6
QDET2
68
floating
3.6
4.1
4.6
CAFC
69
floating
1.2
3.4
4.1
Vlevel
70
XTAL1
71
1.7
2.1
2.5
1.7
2.1
2.5
2.1
2.5
1.7
2.1
2.5
external biased
XTALGND
72
external 0
XTAL2
73
1.7
USNSENS
74
floating
TMUTE
75
IREF
76
4.25
4.5
4.25
4.5
AMMIX2OUT1
77
external 8.5
4.5
AMMIX2OUT2
78
external 8.5
CAGC
79
4.1
2003 Dec 19
external 0
external biased
external 8.5
external 8.5
4.4
4.7
49
Philips Semiconductors
Product specification
TEA6842H
14 INTERNAL CIRCUITRY
Table 29 Equivalent pin circuits
PIN
SYMBOL
FMLIMDEC
FMLIMIN
EQUIVALENT CIRCUIT
5 k
1
12 k
2
MHC374
AMIF2DEC
AMIF2IN
500
3
2 k
6
MHC375
IFAMP2OUT
330
4
MHC376
AMNBHOLD
80 k
5
MHC377
2003 Dec 19
IF1GND
50
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
IFAMP2IN
11
IFAMP2DEC
EQUIVALENT CIRCUIT
330
11
330
8
MHC378
Coffset
1 M
9
MHC379
10
IMUTEREF
59
10
MHC380
12
IFAMP1OUT
330
12
MHC381
13
n.c.
14
IFAMP1IN
17
IFAMP1DEC
5
k
5
k
330
14
15
2003 Dec 19
n.c.
51
17
MHC483
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
16
VDDA1
18
MIX1OUT1
19
MIX1OUT2
EQUIVALENT CIRCUIT
18
19
MHC383
20
VDDA2
21
AMAGCBUF
21
MHC384
22
AMMIX1IN2
23
AMMIX1IN1
400
23
22
MHC385
24
n.c.
25
n.c.
26
T1AMAGC
26
20 k
MHC386
27
T2AMAGC
200
27
MHC387
2003 Dec 19
52
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
IAMAGC
28
MHC388
29
Vref(FMMIX)
29
MHC389
30
FMMIXIN1
33
FMMIXIN2
10
k
10
k
30
31
RFGND
32
n.c.
34
WBSW
34
33
200
50 k
MHC391
35
IFMAGC
35
MHC392
2003 Dec 19
53
MHC390
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
T2FMAGC
10 k
10 k
36
MHC393
37
T1FMAGC
5 k
37
MHC394
38
DAAOUT
36
k
38
MHC395
39
DAATD
39
2003 Dec 19
54
MHC396
Philips Semiconductors
Product specification
40
SYMBOL
EQUIVALENT CIRCUIT
DAAIN
43
39
PIN
TEA6842H
2.5 k
40
MHC397
41
n.c.
42
Vtune
42
MHC398
CPOUT
40
39
43
43
MHC399
44
VDDA3
45
FREF
1 k
45
MHC400
46
VDDD
47
DGND
2003 Dec 19
55
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
48
VCOGND
49
OSCFDB
50
OSCTNK
EQUIVALENT CIRCUIT
3 k
50
49
MHC401
51
VDDA4
52
n.c.
53
AFSAMPLE
53
MHC402
54
AFHOLD
54
MHC403
55
TRDSMUTE
55
MHC404
2003 Dec 19
56
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
AMAFIF2
0.35 pF
201 k
56
MHC405
57
RDSMPX
3 k
57
MHC406
58
FMMPX
3 k
58
MHC407
59
VDDA5
60
TUSN
60
MHC408
61
2003 Dec 19
VDDA6
57
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
USNBUF
60
62
200
MHC409
63
SDA
1 k
63
MHC410
64
SCL
1 k
64
MHC411
65
MUTE
65
MHC412
66
IF2GND
67
QDET1
68
QDET2
69
CAFC
67
69
68
MHC413
2003 Dec 19
58
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
Vlevel
150
70
MHC414
71
XTAL1
72
XTALGND
73
XTAL2
27.6 pF
27.6 pF
20 k
20 k
71
73
10 k
10 k
72
MHC415
74
USNSENS
74
MHC416
75
TMUTE
75
MHC417
2003 Dec 19
59
Philips Semiconductors
Product specification
TEA6842H
SYMBOL
EQUIVALENT CIRCUIT
IREF
10 k
76
77
AMMIX2OUT1
78
AMMIX2OUT2
MHC418
77
78
MHC419
79
CAGC
79
MHC420
80
2003 Dec 19
n.c.
60
Philips Semiconductors
Product specification
TEA6842H
15 PACKAGE OUTLINE
LQFP80: plastic low profile quad flat package; 80 leads; body 12 x 12 x 1.4 mm
SOT315-1
c
y
X
A
60
41
40 Z E
61
e
E HE
A A2
(A 3)
A1
w M
bp
Lp
L
pin 1 index
80
21
1
detail X
20
ZD
v M A
w M
bp
D
HD
v M B
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
D (1)
E (1)
mm
1.6
0.16
0.04
1.5
1.3
0.25
0.27
0.13
0.18
0.12
12.1
11.9
12.1
11.9
0.5
HD
HE
14.15 14.15
13.85 13.85
Lp
0.75
0.30
0.2
0.15
0.1
Z D (1) Z E (1)
1.45
1.05
7
o
0
1.45
1.05
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT315-1
136E15
MS-026
2003 Dec 19
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
00-01-19
03-02-25
61
Philips Semiconductors
Product specification
TEA6842H
To overcome these problems the double-wave soldering
method was specifically developed.
16 SOLDERING
16.1
Reflow soldering
16.4
Wave soldering
2003 Dec 19
Manual soldering
62
Philips Semiconductors
Product specification
TEA6842H
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
REFLOW(2)
not suitable
suitable
not suitable(4)
suitable
suitable
suitable
not
recommended(5)(6)
suitable
not
recommended(7)
suitable
not suitable
not suitable
Notes
1. For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods.
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
5. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
9. Hot bar or manual soldering is suitable for PMFP packages.
2003 Dec 19
63
Philips Semiconductors
Product specification
TEA6842H
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
Objective data
II
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
18 DEFINITIONS
19 DISCLAIMERS
2003 Dec 19
64
Philips Semiconductors
Product specification
TEA6842H
Purchase of Philips I2C components conveys a license under the Philips I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
2003 Dec 19
65
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
R32/01/pp66
Dec 19