IEEE

JOURNAL

An

OF SOLID-STATE

Integrated

WILLY

AbsfractThe
amplifier
three

basic

bipolar

importance
dynamic

able

(age)

and

circuit

distortion

in bandwidth

is then

scheme

noise,

together

and

compared

with

multiplier

all

others

shows

circuits.

the

On the
for

automatic-gain

allows

a significant

circuits.

MEYER,

in the

quad

for
high

In

the

feedback
(age)

amplifiers

configurations

amplifiers

are most often used in

that

can be handled

Most
rived

wide-band
from

consist

[2]

variable-gain
tions

shown

quad

are restricted

[3]

[4].

input

Input

in

1 (b),

in Fig.
circuit

cancellation

impedance

which

1 (c).

stages, the maximum

is typically
varioloss

about

configurations

the

and

of amplifier
from

This

automatically

lowest distortion
of the

transistors.
[Fig,

II.

value,

limits

the

and

to

It

also
three

leads

to the

for

an

then,

the

col-

basic

con-

conclu-

1 (a) ] is superior

that

exists

by

generated

and

the

be achieved

limit

noise

[Fig.

and

there

large.

be reduced

to the base

a given

output

upper

limit

with

bipolar

depends

realize

effectively

of the

selected,

total

Also,

of the

this

quad

to

the

tran-

only

in order

quad,

on the

input

optimum

be employed

allows

which

a bias

be accompto achieve

scheme

of

has

is highly

1P

must

and

~EE.

a low quad current

1P is the improved

In Section IV the choice of the currents

and

age amplifier

can

values

differing

1 (a)]

which

in order

the quad,

combines

a high pair current

[Fig.

This

Ip. Thus,

from

which

The agc amplifier

range.

current

performance

the optimum

pair

conversion

frequency

pair

dynamic

~EE has to be

to maintain

the

a voltage-to-current
a wide

optimum

current

improved

~EIS

age amplifier.

IBN and IP in the

is discussed.

excludes

[4] reported that the distortion

of Fig. 1 is mainly
caused by

of the quad

value

by a high

II.

range, the ag,e amplifier

to

the

over

with

for

suffers

due again

transistors
analysis

is most

also
is made

important

fol-

circuits.

base resistances

range

distor-

are differential,

are independent

be-

order

to provide

Considera-

the

is mainly

can

upper

performance

linear

However,

the

base resistance.

properly

lished

gain is larger than unity

15 dB.

It has been previously

in the basic amplifiers
dynamic

1 (a),

This

range,

Gilberts

and

of even-order

ports

all

by an input

gain. In order to reduce the noise contribution

lowing

In

can be de-

[1] shown in Fig.

shown

and output

and output

transistor

driven

Fig.

to balanced

cause of the resulting

tion

signal levels. The

signal amplitude

amplifiers

of transistors

are the age amplifier

multiplier

that

range.

can

configurations,

range

sistors.

distortion

agc amplifier

dynamic

amplifiers

high-performance

other

range

hand,

which

quad

dynamic

in Section

the

of the out-

is called the dynamic

of a quadruple

pair. They
the

three

again

ratio,

where the amplitude

variable-gain

quad

noise

signal-to-noise

as automatic-gain-control

put signal is kept constant for all input

ratio of maximum-to-minimum
input

other

level

Gilberts

becomes
noise

is given

that

to the

This

of the

loads.

figurations

ARIABLE-gain

levels.
then

range.

resistances

sion

output

signal

On the

de output
[5].

if the

the

amplifier

dynamic

lector

I. INTRODUCTION

a constant

with

IEEE

transistors.

distortion

lower

MEMBER,

cascading

general,

using
in

a consider-

with

conventional

from

G.

has

suitable

maximum

as the basis

the improved

AND ROBERT

mismatch

to yield

used

biasing

IEEE,

variable-gain

of distortion

is shown

called

A unique

Variable-Gain
Amplifier
Dynamic
Range

which

in all three

configuration

of a new
in

of noise

from

159

by considering

wide-band
is approached

base resistance

amplifier.

reduction

range

one configuration

and this

AUGUST1974

MEMBER,

configurations

analysis

analyses,

the development

increase

transistor

The

range,

control

dynamic

of transistor

of these

C. SANSEN,

of an integrated

maximum

NO. 4,

VOL. SC-9,

Wide-Band
Maximum

M.

design

with

can be derived.
basis

CIRCUITS,

For

high-

1 (a) 1 exhibits

the

ANALYSIS

The

basic

transistors
the

OF NOISE
agc

amplifiers

formed

dominant

from

noise

emitter-driven

IN THE BASIC

pair

all

of a. quadruple

emitter-coupled

sources
(Fig.

consist
are

age AMPLIFIERS

pairs.

examined

of

Therefore,
first

for

an

2).

and is thus the best choice. The dynamic

multiplier

[Fig.

1 (b) ] is limited

due to

A. Aoise Analysis
In

Manuscript
received
October
26, 1973; revised
February
18,
1974. This research
was supported
by the U. S. Army, Research
Office,
Durham,
N. C., under
Grant
DA-ARO-D31-124-72-G52.
W. M. C. Sansen was with the Department
of Electrical
Engineering
and Computer
Sciences and the Electronics
Research Laboratory,
University
of California,
Berkeley,
Calif.
W720. tie
is
now with
the Laboratorium
Fysica
en Elektronica
van de Halfgeleidem,
Katholieke
Universiteit,
Leuven,
Belgium.
R. G. Meyer
is with the Department
of Electrical
Engineering
and Computer
Sciences and the Electronics
Research
Laboratory,
University
of California,
Berkeley,
Calif.
94720.

a transistor,

sidered

of an Emitter-Driven
the following

[7] : the thermal

base resistance,
de current

flow

Pair

types

noise power

of noise are congenerated

and the shot noise powers

in the

base and the

in the

caused by the

collector.

For

the

emitter-driven
pair (Fig. 2), six noise sources have to be
considered
(two per transistor),
and also the thermal
noise associated with resistances Rs, R,g, and RL. The
noise contributions
at the output due to the most important
voltage

noise

sources

are

plotted

versus

gain x in Fig. 3. These curves

the

relative

are the results

of

IEEE

JOURNAL

OF SOLID-STATE

CIRCUITS,

AUGUST

v~~

v..

Q2
R~

I
J IEE

f?
-VEE

(R,)

(b)

Vccl

Q1>

QI

<

-vE~

(c)
Fig.

1.

(a)

age

amplifier
[11.
variable-gain

(b) Multiplier
quadruple
[31.

[21. (c)

Vcc

-&
q
+
-r!!
L

t.
1

Q3 1)4

VB+

/1~

RE

vi

V~E

Fig.

2.

Emitter-driven

variable-gain

pair.

Gilberts

1974

5ANSEN AND MEYER: VARIABLE-GAIN.4MPLIFIER

161

Relolive attenuation x ( dB)

Fig. 3. Noise voltage

contributions
of the dominant
noise sources
in the emitter-driven
pair
(Fig.
2) plotted
versus
signal
attenuation
z for transistors
CA 3018 at 1, = 4 mA, R. = 50061,
R,=50Q,
and Rs=25Q.

computer;
o measured.

straightforward
puter

circuit

noise analysis

The

relative

control

voltage

analysis

with

by hand, verified

by com-

voltage

gain

If the pair
put signal,

CANCER [6].
z is determined

by

the

dc

V~ and is given by

&/No
of

is precisely

Fig.

(1)
gain

(Z =

as a cascode

output
sistance

1 or 0 dB attenuation),

amplifier

is low

with

and mainly

However,

RE.

tenuation),

the

gain

the pair

RL/RE.

due to transistor

at half

currents

gain

noise

Q1 and re-

(x = 1/2 or 6 dB at-

in transistors

Q~ and

equal, and the noise due to the base resistances

Q1 causes a large output

behaves

The total

noise peak with

QA are

of Qs and

a value given by

output

measure

noise

variable.
At full

the inverse

3. The

useful
the

is used as an agc circuit

then the curve of output

depends

At maximum

~kT(r,>m

(2)

V,..

this

lowest

higher

value),

input

VT = kT/q

where

the current
tribution

!= 26 mV at 302 K and At represents

bandwidth.

in transistor

For

increasing

attenuation,

Q4 decreases such that

at the output

of the base resistance

the connoise de-

creases proportionally.
If the pair

ID is very

low, the base resistance

does S./NO [1] until

Under

all

for

very

which wide-band
performance
consequence,
higher currents
the maximum
resistances
half

does not depend

low

values

is hard to obtain. As a
are usually
chosen, and

noise peak is thus entirely

in the pair.

the maximum

of In at

It is given

by

due to the base

(2) and occurs at

gain.

Three Basic

1 (b)],

the

agc amplifier

plier

equal

of

the

Fig. 3 by shifting

the curves

data show good agreement

up by 3 dB. Experimental

with

the calculated

curves.

output

&JiVo

is higher

However,

gain

and decreases

its peak

at half

in all four

for the

noise peaks
at higher

noise performance,

the maximum

gain,
because

are then nearly

leads to the surprising

result

at high attenuation.
The reverse
It can thus be concluded that in

the multiplier

is inferior

to the agc

quad since the noise peak due to base resistance,

the

at-

noise for the multi-

quad transistors

This

[Fig.

due to the

whereas

the same for higher attenuation

in magnitude.

and

circuit

of Fig. 1 (a) the base resistance

also reaches

in

the amount

noise is again

levels, the base resistance

same for

both,

extends

over

although
all high

levels in the multiplier.

Gilberts

noise voltage

The noise output power of the agc quad is simply twice

that of the emitter-driven
pair. It is thus found from

requirement
only

gain has to be examined.

conditions,

of the quad.

that S,/NO is minimum

holds for the agc quad.

For

Quads

range,

used as a variable-gain

the maximum

tenuation

For

and so

the requirement.

maximum

base resistances

in amplitude

of the Noise Performance

is

of the input

increases,

minimum

dynamic

gain

For the multiplier

attenuation
B. Comparison

because
which

SO/NO levels out because of the noise

satisfies

the currents

true

gain,

of SO/NO is minimum.

the maximum

the noise output

of R~ and R~, which

is a more

figure

circuit

attenuation

for a specific

other

but then remains

is only

the

Se/NO over the whole

noise peak given by (2) may become lower than the shot
noise of Q4 (which decreases only as ~~B), or lower than
on 1~. This

the value

due to RT,. Thus,

at half

current

on the

ratio

noise

gain, the amplitude

signals,

automatically
the noise power

the

signal reaches its lowest value, but at half the maximum

gain (where the amplitude
of the input signal is twice

of noise at half
v,.

outratio

of the noise characteristic

signal-to-noise

of noise than

figure

for constant

sig~~al-to-noise

quad

[Fig.

1 (c)],

due to base resistance

the :maximum

output

occurs at maximum

gain and equals 2@

times the noise peak for the agc
quad if base resistance and quad current are assumed to
be equal. Used in an agc loop, Gilbert,s quad thus exhibits its minimum
SO/NO for its smallest input signal

IEEE

162

level, and S,/NO improves for increasing input

is also the case for the age amplifier.
However,

signal, as
since the

peak noise output

than

from

for Gilberts

the agc amplifier,

dynamic
For

quad is larger

the latter

is preferred

10

that

the

agc amplifier
from

at high

frequencies,

the

proximately
constant, but the noise output
r~ decreases with a slope of 20 dB/decade

ap-

low

at high frequencies

frequencies,

is thus less important

and therefore

further.

The frequency-dependent

CANCER

[6].

Similar

and Gilberts

quad.
shows that

from

conclusion

ance

[4],

was reached

the agc amplifier

variable-gain
A design

amplifier

1 (a)].

distortion

maximum

,.-7

Fig.

4.
for

Output
signal
a given, quad

can

where

DRP

is now

DYNAMIC

Dynamic

Range

In the agc amplifier,

plitude

of the output

for

Under

range.

considered

RANGE OF THE agc

voltage

gain A., which

current.

current

and which

amplitude

of the

maximum
possible.

A.
It

is given

by

current

iP, which

V~,

is defined

to the dc quiescent

input

voltage

unity

by the

by the dc voltage

current

is caused
output

and

is determined

swing

of the ac peak

voltage

which
swing

vi. The

is obtained

of

and is represented
(Fig.

voltage
4).

ig is the

obtained

by

reducing

At

values
point

unity.

voltage
either

AB.

A.

lines

of the

current

VO lower

than

highest

output
swing

iP

VOII can

be

by the

whereas

yield

straight

at point

identiline

l?C.

C, i. equals

AV{~.x is achieved
for all points
on
parallel
to Al? thus represent
constant
gain

(e.g., the AO,~.x 20

range
BC in

(points
ratio

is illustrated

noise obtained

on BC close

&/N.

B),

to

by noise if a specific

value

n is

to

be

in Fig. 4. The curve of total

from

Fig. 3 is added in Fig. 4 on

scale as for output voltage VO. On the

however,
O dB relative
attenuation

(z =

noise

1) for

the

coincides

with

maximum

AV,~l.x (point B) for the chosen value

signal voltage VO. As a consequence, variation

causes B to shift

V.

curve

gain

output

on the AV,~,x line

the noise curve to translate

tance as B. The vertical
line BC

distance

In order to realize

ratio

an output

ratio

n, only

dis-

between the constant-vO

is always

signal-to-noise

of
of

and also causes

over the same horizontal

and the noise curve

of the output

from

considered.

a direct

measure

S,/NO.

voltage
the

20

log,, ~Z dB

(4)

dynamic

The

gain

VOwith

minimum

conditions

repre-

DRN

dynamic

range

is then

resultant
tential

represents

dynamic
dynamic

for

= DR.
(in

DRN
decibels)

(5)
the

reduction

in

n is allowed to decrease, then

D slides towards
point B, and

the

range due to the noise peak.

If the value of
n = vo/v08, point

the

chosen

of VO vary

for

out

what

for

each

value

is plotted
total

jumps

DRP which

value

of the

find

DR

range
range

viewpoint

stant

dynamic

by

where

the

range CD and therefore

resultant

DR

DR
=

the [continuous

not

sible

dB line).

Neglecting the effects of distortion

and noise, the maximum dynamic
range
DR,W for a specific output. signal
level VO equals the potential
dynamic range DEP, which
is given by

DItP

dynamic

line segment

the same vertical

horizontal
scale,

given

AO or i~ or both. In the plot

of A. and iv that

B, A. is maximum,

Lines

plot

fractional

of VO are represented

Maximum

line

A in the

the

of Fig. 4, all combinations

cal

in

sented by the line CD (Fig. 4) are usable. Actually,

the
narrow region close to B also satisfies, but is isolated

by point

output

(3). The potential

by the complete

signal-to-noise
This

signal-to-noise

by

VO versus

Any

o.I

v. versus fractional
current
swing
I~E and signal-to-noise
ratio n.

range is limited

output

for

(3)

signal

high gain conditions

the dynamic

voltage

in Fig. 1 (a), the am-

voltage

is controlled

and by the fractional

as the ratio

of the agc Amplifier

represented
signal

0,0[

Fig. 4.

perform-

AMPLIFIER

A. Optimum

given by

VO,lI is

output
MAXIMUM

voltage
current

is represented

achieved.

THE

noise

Fraction Current Swing iP

in detail.
III.

0.001

Since a

choice

dynamic

configuration

x= I 05

of the three

is the obvious

with

based on this

[Fig.

for

by

for the multiplier

the best performance

the agc amplifier

be considered

of the noise performance

basic configurations
similar

apply

at

noise was computed

conclusions

The comparison
be expected

need not

than

1974

AUGUST

=
.
.:

voltage due to
above the 3

dB frequency
defined by r~ and the common emitter
input capacitance CT. In a first-order
analysis, noise generation

CIRCUITS,

lrJl

a)
s
~ ,.-3

noise

RL, Ql, and 1C4 in Fig. 3 remain

:.

range.

contributions

OF SOLID-STATE

DRN

=
~

for a large

JOURNAL

of VO. It

designer,

a given

minimum

maximum
of VO. The

up towards
is the

is more

however,
range

answer

is given

can

popos-

practical

requirement

dynamic

the

maximum

to let

for

from

the

value

n, and

to

be achieved

in Fig.

5 where

versus VOfor a given value of n and a con-

quad current

The maximum

dynamic

I~H.
range DR1l is obtained

at out-

SANSEN

AND

MEYER:

VARI.4BLE-GAIN

AMPLIFIER

163

__l

-1

DRM
-..._..-.r__-...
g

60

40

4x or 12dB

%
.
s
,s
E
: 20
S

,
due 10 lc/:

due 10RL

OR limited by noise.,.
!
I

0.1

ore

10
Output voltage v, [mV)

Fig. 5. Dynamic
range DR versus output
given quad current
1., and signal-to-noise
dynamic
range due to distortion
is not

put

voltage

voltage

v.,,,,

which

VON derived

equals

the

equals

by

potential

peak

noise

DRM

of

then

DRP and is given

by

2VF

nwlcT(r~,,,

given

the

value

range

Fig. 6. Asymptotic
values of maximum
dynamic
range DRM of
the age amplifier
versus quad current
ZEE for given values
of
signal-to-noise
ratio
n, third-order
distortion
d, and collector
load Rr,.

realized

in the

DRD

range
quencies

is given

This

value

this

of bipolar

the base resistances

optimum

output

current

the

voltage

equal

dynamic
range,

always

other

hand,

reduced
becomes

whereas

A~ =

all

4.5 MHz,

four

and

greater
if

the

to values

the

amplitude
below

dynamic

noise

does not

limit

signal-to-noise
value

of the

output

dynamic

such that

of v, at a value

is caused by the equal

than vO,,,,the

[see Fig. 5 or expres-

required

v~,~,, the

slopes

when

VO decreases,

point

the

ratio

is

of n. On the
signal

VO is

range

is lim-

the dynamic

range

12 dB

DRl~.

below

(20 dB/dec)

AB and the curve of noise due to base resistance

Indeed,

by

[4]

B moves down

of line
(Fig 4).
and to

circuit

specific

on the

is

of

d, the

quad

current

termediate

values

optimum,

as given

output

fre-

low

the values

by

the

(6).

in Fig.

maximum

For

lower

ratio

depends
6. For

dynamic

in-

range

is

va Iues of IE~, noise

due to R,, reduces the maximum

dynamic range, whereas
for higher values of Ifl~, the maximum
dynamic range is
decreased by distortion.
The optimum value of Imn is thus
at the

edge of the

which is designated
ample, 1~~1,, equals
yields

the

distortion-limited

region,

by 1~~1. at low frequencies. For ex12 mA for c1 = 0.01 (1 percent IMs)

1. Actually,

any

same value

current

of DR1,,

level VOis proportional

to l~,j

but

in the flat
the

ably [4] with

mum distortion

[see expression

frequency.
For
d, the optimum

region

output

signal

(7)]

thus better chosen as high as possible.

At high frequencies, the distortion
increases

and is

consider-

a specific value of maxivalue of 1~~ (Fig. 6) thus

decreases with increasing

frequency
and is now designated by 1~~,,,. If, for example, f~ = 6 MHz, the maximum

dynamic

range

unless 1~~ ]s lowered

frequencies,
the

decreases
to

distortion

distortion

At

of DRJ1l and VO

have become very low and thus are of little interest.

Distortion
also limits the dynamic range which can be

second-order

range

1~~, as it is shown
of l~n,

l~~i~i =

high

usually
the

not

junction

by 20 dB

at 60 MHz,

1.2 mA.

Also

due to feedthrough

due to base resistance

B. High-Frequency

both

no

dynamic

output
signal voltage is reduced further,
the dynamic
range is limited by noise due to Rz or 1.4, whichever is
region,

at

signal-to-noise

maximum

dominant
limitation
of dynamic
more detail in the next section.

In this

in dynamic

ideally,

the left along line AB. The noise curve moves only to the
left such that CD remains the same. If the amplitude
of

higher.

reduction

distortion

balanced,

values

distortion

obtained

signal-to-

if Rz = 500 fi

VOis greater

output
the

third-order

is present.

and rI)/P

voltage

than

independent

base

n DR,W

then

output

at VO = 10.7 mVr~,

the

on the quad

example,

range decreases

ited.. by base resistance

This

for

(4) ] and so does DRJ1. Noise

dynamic

depends on

(7).

If the chosen output

then

only

is 40 dB, then 43 dB is the maximum

range. This is obtained

sion

can be achieved

It

(6). If the required

and 1~~ = 4 mA from

potential

that

vO,,, also depends

100 Q and

equals 83 dB from
noise ratio

and

transistor,

RI,. If,

For

(7)

of the quad transistors,

1~~ and load

resistances

1
72

of DR.Tl is the highest

type

The

to

(8)

distortion

with

agc amplifier.

due

Af
Since

RJBE
DR~

100

(6)
+ r,,,,)

by

v
m =

10

Quad current IEE ( mAl

signal voltage
v. for a
ratio n. Reduction
in
taken
into account.

The

0,I

0.01

100

n times

(2).

dynamic

DR.
and vO,,Lis then

fi.%tJ

at high

combines

and

range. This

with

becomes
is treated

the
in

I,imitations

frequencies,

the

reached

because

capacitances

maximum
of

of
Q,

dynamic

signal
and

range

feedthrough
Qfi

[Fig.

is
via

1 (a) 1. A

IEEE

104

40

JOURNAL

OF SOLID-STATE

CIRCUITS,

1974

AUGUST

10dB
20dB
.30dB
40dB
I

-20

20 - 10dB
z
E
.:
o

- 30 dB

-20,

10
.

Fig.

7.

Attenuation

[Fig.
(b)

first-order

estimate

following
sistor

way.

Q3,6 is on,

impedance

level

sistor

Q4,5 is

source

impedance

second-order
a,nd

which

thus

IEG =

for

3045

at

in the

following

tran-

transistors

thus

represents

is never

higher

from

to

frequencies

QA,E. In

by transition

of

this

circuit

with

QA and Q, exhibit

as a

ing mainly

acts

CjB,

way,

rBj

the

frequency

an

~jc,

feed-

ff given

by

They

1/3

&

(9)

T~3,f,TBr;ciEciC

Q4 and Q5.

Under

fr gives the

high attenuation

conditions,

f!, above which

(and phase inverses)

frequency

feedthrough

becomes dominant

as given by

f. = f,/ m
where A is the attenuation
attenuation).
Expressions
fied by measurements
and

by

The

agreement

quencies

use of the

on the agc amplifier

circuit

(above

300

MHz

analysis
Fig.

Q, and Q. can no longer be treated

where collector-substrate
capacitances
Fig. 7 shows the transfer
lifier

[Fig.

1 (a)]

for two

at

7)

very

where

1 (a)]

base stages.

however,

impedance

by a current

impedance

consist-

CjE

and

Cjo.

source shunted

of the other

pair

can thus occur. This

if the quad

is biased

of
can

at the quad

given by [9]
I

because

the

resistive

input

signal

version

[8].

range.

fre-

current

of the agc amp-

values

input

of the quad

current IE,E. For a high quad current, peaking occurs in

the transfer characteristic,
which can be explained by the

(11)

Q3 and

impedances

Q6 then

(with

present

value

r~)

conto the

currents.

In order
the

2VT
.

EG
r~

transistors
input

IV.

high

transistors

pair

stant

TIME

independently
and
become important.

characteristic
different

[Fig.

program

except
in

input

input

capacitances

Q~ and QG. Peaking

(lo)

(e.g., A = 100 for 40 dB

(9) and (10) have been veri-

is satisfactory

current

junction

however,

inductive

transistors

common

where Cj~, Cfc, and w all refer to transistors

frequency

a capacitive

are driven,

by the

At high gain, the output

is thus about J!. However,

under
conditions,
the output transistors

of their

be avoided,

considerations.

behave as current-driven

~E3,!3. Tranand

consisting

amplifier
10 ZBG and

source

emitter

than

The cutoff frequency

maximum
attenuation

its

a voltage

agc

1,,

0.28 mA.

conditions,
at

the

(a)

is obtained

filter

belonging

with

CA

attenuation

rB3,6 at. high

is described

I..

frequency

transistors

feedthrough

driven

high-pass
all

RL,

through

and

IBE =

( MHz)

high

of this

Under

versus

1(a) 1 with

loco

100

Frequency

THE

IMPROVED

to maintain
pair

has

which
This

is

the high

to

provide

highly

can only

Iv or a high

linear
be

value

agc AMPLIFIER
performance

of the quad,

a voltage-to-current
over

a wide

accomplished

by

of degeneration

confrequency

a high
resistance

pair

RE

Since
a high
R~ decreases the gain and
[Fig. 1 (a)].
causes a high noise output, the first solution is indicated.

On the other hand, the optimum

dynamic range and the
flat transfer characteristic
can only be realized at fairly
low quad currents. As a consequence, different
currents
are needed in the pair and the quad. The agc amplifier,
which

combines

a low quad current

IEE with

a high

pair

AND

SANSEN

MEYER

: VARIABLE-GAIN

165

AMPLIFIER

vcc

5
7

Hi
3.7k

8k

QIO

1.4k

Qll

2.2k

2:k

Fig.

9.

Integrated

circuit

of the improved
values in ohms).

II

agc amplifier

(resistor

+
b-

-L

-VEE

Fig.

current

8.

Improved

agc amplifier

19, is represented

the integrated

circuit

of the circuit

current

current

such that

in Fig. 8. It is implemented

in
chosen sufficiently

of the Improved
agc amplifier

IQ which

(Fig,. 8), the resistances

is the difference

RB is always
Q4,6.

much

The voltage

between

the

IEE. The biasing

larger

than

is

the input

im-

gain is then approxi-

given by

>> VT. For the integrated

Electronics

Research

fornia,

Berkeley}

350i2;

RE=300).

For an output
MHz),
obtained

the voltage

by

any value

ration

this maximum

be obtained
(IEEM

Cali-

=40

(Af =

dB

range

that

(6)

equals

43.6 dB,

and

of Ifl~ between

dynamic

if the quad current

4.5

can ever be
At

low

0.37 and 2.9 mA

IM3) allows that maxiat high frequencies

(70

dynamic

voltage

1 mA

value

(n times

IHE for optimum

of von is experimentally

maximum

dynamic

find. Fortunately,

noise level),

easy to

the value

of

range is much more difficult

to

experimental

work

has shown that

the

The

optimum

Experimentally,

6 mA.

The

latter

value

was

of the improved
Fig.

1 (a) with

the quad
noise

agc amplifier
equal total

current

and

the performance

and the agc amplifier

currents.

are greatly

rE4,5 = 105 ~; ~E3,6 =

V) = 2.1 PF; CCS(5

65 ~; j?mt. =
V) = 3.1 PF.

of

In the agc amplifier,

IEE equals the pair

distortion

need not

current

enhanced.

IP so that
For

the IC

process used here, the worst case reduction

in dynamic
range that can occur is then 15.5 dB due to distortion

the dynamic
this

distortion.

ratio.

At low frequencies,

B. Integrated

The

depends

and output

and n = 401dB,
21 dB. Of

12 dB is due to noise and 9 dB is due to

but is entirely

tegrated

reduction

distortion

range decreases by approximately

amount,

Improved
1 Transistor
parameters:
210 MHz;
B = 22; CV(5

by 3 dB at

and this value

For d = 1 percent

5.9 mV,~,.

considerations,

refined by experiments.
it is interesting
to compare

signal-to-noise

v.~

1P

bandwidth

of maximum

at 70 MHz.

and

from

be further
Finally,

on the specifications

is available
is then

at InE = 1 mA, decreased

34.5 dB, obtained

the values of 0.4 and 1.5 mA. As a consequence, an acceptable value of ~fl~ can be estimated from Fig. 6 and

and 15.5 dB due to noise. The actual

the maximum
dynamic
range was found to be 33 dB,
which occurred at 3.5 mV,~~. The current
levels were
I-E,E =

determine

of emit-

in the pair.

the

IBD is lower than 0.4 mA

6). Since the bandwidth

of the quad is then
low, IDE = 1 mA is chosen so that only 34.5 dB
range

Whereas

range of 43.6 dB can only

in Fig.

rather
output

in the

of

dynamic

(= ~EZ710 in Fig. 6 for 1 percent

mum to be achieved. However,
MHz),

realized

University

gain is about 20 dB (RL =

signal-to-noise

is given

circuit

Laboratory,

the maximum

frequencies,

are maintained

a large amount

only a small value of emitter

low levels of distortion
and noise

choice of the optimum value of IBE is not so critical as is

suggested in Fig. 6. The maximum
dynamic
range of
(12)

if RJP

high to realize

ter degeneration
with
resistance. In this way,

agc Amplifier

1P and the quad current

pedance of Qs,s or
mately

Im).

is given in Fig. 10.

In the improved
pair

IQ +

shown in Fig. 9. A microphotograph

A. The Performance

RB carry

(ZP =

the decrease is only 17 dB,

due to noise.
Circuit

Realization

oj the

agc Amplifier.

improved
circuit

agc amplifier
(Fig.

9),

is implemented

fabricated

using

in an inregular

six-

166

IEEE

mask
in

processing.

the

signal

is designed
(Q

Two

path.
to

keep

Q5, etc.].

stripe

for

of

first

n-p-n

feedthrough

other
of

low

are

type

circuit

used

transistor
as low

transistor

purpose

transistors

is a small-size

signal

The

the

types

The

has

and

as possible

a double

noise

and

base

distortion

Q2, Q3, QG) .

The biasing scheme of the improved
age amplifier
has
to ensure that the total quad current I~D, which is the
sum of the emitter
currents
of Qs, QA, Qb, and QG, is
(~1,

stabilized
must

with

respect

be achieved

the total

pair

wise, any

to

transistor

parameters.

even when IEE is small

current

Ip which

inaccuracy

cause considerable

flows throug,h

in the determination

variation

This

compared

with

Qls. Otherof IP would

in the amplitude

transistor

JOURNAL

variable-gain

OF SOLID-STATE

amplifiers,

IEEE

CIRCUITS,

AUGUST

1974

J. Solid-State Cir-

caits, vol. SC-$, pp. 275-282, Aug. 1973.

Three
technologies
on one chip make a broadband
[51 J. Addis,
amplifier,
Electronics,
pp. 103107, June 5, 1972.
and R. Rohrer,
Computer
analysis
of nonlinear
[61 L. Nagel
circuits,
excluding
radiation
(CANCER)
, IEEE
J. SolidState Circuits,
vol. SC-6, pp. 166-182, Aug. 1971.
and D. E. Hooper,
(The design of wide-band
[71 E. M. Cherry
transistor
feedback
amplifiers,
Proc.
Znst. Elec.
Eng.,
vol.
110, pp. 375-389, Feb. 1963.
and S.-P. Fan, *TIMEA
nonlinear
DC and
[81 F. S. Jenkins
time-domain
circuit-simulation
program,
IEEE
J. SolidState Circuits,
vol. SC%, pp. 182-188, Aug. 1971.
Characterization
and
[91 W. M. C. Sansen and R. G. Meyer,
measurement
of the base and emitter
resistances
of bipolar
transistors,
IEEE
J. Solid-8tate
Circuits,
vol. S(2-7, pp. 492498, Dec. 1972.

of current

IBE. Therefore,
current
IBn is sensed by diode-connected
transistor
Q7, which drives Q~, QIZ, and finally Qls. This
feedback loop stabilizes I~H at a value which is deterresistor
of
mined by current IQ (Fig. 8) and the emitter
p-n-p

transistor

sistance

Q8. A shunt

thus

must

be

allows

variation

decoupled

achieved

by

potentiometer

at

bypassing

this

of IEE. The

feedback

frequencies,

and

high
the

across

base

of

reloop

this

is

Qa.

V. CONCLUSION
The

optimization

namic

range

been

approached

plifiers

which

by

an input

tortion
fier

in
[1]

investigation

quads

An
has

suitable

the

shown

has

the

and

agc

realization

am-

driven

of noise

that

the

dy-

basic

of transistors

analysis

for

of

amplifiers
of three

of a. quadruple

[1][3].

to achieve

that

distortion

in

However,
In

stabilizes
pair

the

the

maximum

quadruple

and

noise

to obtain

input

dynamic

bandwidth

variable-gain

dis-

ampli-

of

a high

range.

level

the

a wide

the

consist

these

rent

high.

by

pair

order

in the

over
integrated

is most

dynamic
In

of

stage,

low
the

improved

the

quad

current.
range

dynamic

has to
fall

within

distortion
current

the

over
in the

Only

in

be reached

a wide

a much

this

way

can

transistor

the

so

limits.
has to be

value

loop
than

maximum
parameters.

REFERENCES

W. R. Davis and J. E. Solomon, A high-performance

monolithic
IF
amplifier
incorporating
electronic
gain
control,
IEEE
J. Solid-State
Circuits,
vol.
SC-3, pp. 408-416,
Dec.
1968.
A precise four-quadrant
multiplier
with subnano[21 B. Gilbert,
second
response,
IEEE
J. Solid-State
Circuits,
vol. SC-3,
pp. 365473,
Dec. 1968.
A new wide-band
amplifier
technique,
IEEE
J. Solid.
[31
Stat;
Circuits,
vol. SC-3, pp. 353-365, Dec. 1968.
[41 W. M. C. Sansen and 1%. G. Meyer, Distortion
in bipolar
[11

Willy
M. C. Sansen
( S66-M 72) was born
in Poperinge,
Belgium,
on May
16, 1943.
He received
the engineers
degree in elec!.
tronics
from
the Katholieke
Universiteit,
Leuven,
Belgium,
in 1967, and the Ph.D.
degree in electronics
from the University
of
California,
Berkeley,
in 1972.
h
In 1968 he was employed
as an Assistant
at the Katholieke
Universiteit.
In 1971 he
was employed
as a Teaching
Fellow
at the
.. - J
University
of California.
In 1972 he was ap~ointed
bv the Belzian
National
Science Foundation
(N .F.W.O.)
& a Res~arch
Ass~ciate
at the Laboratorium
F~sica
en Elektronica
van de Halfgeleiders,
Katholieke
Universiteit.
His interests are in device modeling
and in distortion
and noise limitations
in integrated
circuits.
Dr. Sansen is a member
of the Koninklijke
Vlaamse
Ingenieurs
Vereniging
(K.V.I.V.)
and Sigma
Xi. In September
1969 he received a CRB Fellowship
from the Belgian
American
Educational
Foundationj
R.nd in 1970 a G.T.E.
Fellowship.
k

bandwidth

pair

lower

cur-

low

a dc feedback

at

for given

the

required

input

agc amplifier,
current

range,

be sufficiently

Robert
G. Meyer
(S64M68)
was born in
Melbourne,
Australia,
on July 21, 1942. He
received
the B. E., M. Eng. Sci., a~d Ph.D.
degrees
in electrical
engineering
from
the
University
of Melbourne,
Melbourne,
Australia,
in 1963, 1965, and 1968, respectively.
In 1968 he was employed
as an Assistant
Lecturer
in Electrical
Engineering
at the
University
of Melbourne.
Since September
1968 he has been with
the Department
of
Electrical
Engineering
and Computer
Sci.
ences, University
of California,
Berkeley,
where
he is now an
Associate
Professor.
His current
research
interests
are in highfrequency
distortion
in amplifiers
and noise performarice
of integrated
circuits.
Since
1970 he has also been
a consultant
to
Hewlett-Packard
Corporation.
Dr. Meyer
is a member
of Sigma Xi,