IRF9520 PMOS Complementario A IRF520

IRF9520, SiHF9520
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) ()
VGS = - 10 V
0.60
Qg (Max.) (nC)
18
Qgs (nC)
3.0
Qgd (nC)
9.0
Configuration
Single
S
Dynamic dV/dt Rating

Repetitive Avalanche Rated
P-Channel
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9520PbF
SiHF9520-E3
IRF9520
SiHF9520
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
20
Continuous Drain Current

Pulsed Drain
VGS at - 10 V
TC = 25 C
TC = 100 C
Currenta
ID
IDM
Linear Derating Factor
UNIT
V
- 6.8
- 4.8
- 27
0.40
W/C
mJ
Single Pulse Avalanche Energyb
EAS
300
Repetitive Avalanche Currenta
IAR
- 6.8
Repetitive Avalanche Energya
EAR
6.0
mJ
Maximum Power Dissipation
TC = 25 C
Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
60
dV/dt
- 5.5
V/ns
TJ, Tstg
- 55 to + 175
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 C, L = 9.7 mH, Rg = 25 , IAS = - 6.8 A (see fig. 12).
c. ISD - 6.8 A, dI/dt 110 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91074
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9520, SiHF9520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
Maximum Junction-to-Case (Drain)
RthJC
2.5
UNIT
C/W
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 A
- 100
VDS/TJ
Reference to 25 C, ID = - 1 mA
- 0.10
V/C
VGS(th)
VDS = VGS, ID = - 250 A
- 2.0
- 4.0
Gate-Source Leakage
IGSS
VGS = 20 V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
- 100
VDS = - 80 V, VGS = 0 V, TJ = 150 C
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance

Forward Transconductance
RDS(on)
gfs
ID = - 4.1 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 4.1 Ab
0.60
2.0
390
170
45
18
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
3.0
Gate-Drain Charge
Qgd
9.0
Turn-On Delay Time
td(on)
9.6
tr
29
21
25
4.5
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.8 A, VDS = - 80 V,
see fig. 6 and 13b
VDD = - 50 V, ID = - 6.8 A,
Rg = 18 , RD = 7.1, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
nH
7.5
- 6.8
- 27
- 6.3
98
200
ns
0.33
0.66
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = - 6.8 A, VGS = 0
Vb
TJ = 25 C, IF = - 6.8 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com
2

S11-0512-Rev. B, 21-Mar-11

IRF9520, SiHF9520
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
101
VGS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
100
- 4.5 V
101
175 C
20 s Pulse Width
TC = 25 C
- ID, Drain Current (A)
- 4.5 V
100
20 s Pulse Width
TC = 175 C
100
91074_02
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 C

S11-0512-Rev. B, 21-Mar-11
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance

(Normalized)
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
Top
- VGS, Gate-to-Source Voltage (V)
91074_03
Fig. 1 - Typical Output Characteristics, TC = 25 C
101
20 s Pulse Width
VDS = - 50 V
100
101
91074_01
25 C
91074_04
3.0
2.5
ID = - 6.8 A
VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3

IRF9520, SiHF9520
900
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
750
600
450
Ciss
300
Coss
150
Crss
- ISD, Reverse Drain Current (A)
Vishay Siliconix
175 C
100
25 C
VGS = 0 V
10-1
0
100
1.0
101
91074_05
20
VDS = - 20 V
4
For test circuit
see figure 13
0
0
91074_06
12
16
QG, Total Gate Charge (nC)
102
5
100 s
10
5
1
91074_08
1 ms
TC = 25 C
TJ = 175 C
Single Pulse
20
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Operation in this area limited

by RDS(on)
VDS = - 80 V
VDS = - 50 V
5.0
4.0
- VSD, Source-to-Drain Voltage (V)
103
16
3.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = - 6.8 A
12
2.0
91074_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
- VGS, Gate-to-Source Voltage (V)
101
10
10 ms
5
102
103
Fig. 8 - Maximum Safe Operating Area

S11-0512-Rev. B, 21-Mar-11

IRF9520, SiHF9520
Vishay Siliconix
RD
VDS
VGS
7.0
D.U.T.
RG
+VDD
6.0
5.0
- 10 V
Pulse width 1 s
Duty factor 0.1 %
4.0
3.0
Fig. 10a - Switching Time Test Circuit
2.0
1.0
td(on)
td(off) tf
tr
VGS
0.0
25
50
75
100
125
150
10 %
175
TC, Case Temperature (C)
91074_09
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.5
0.2
PDM
0.1
0.05
0.1
0.02
0.01
10-2
10-5
91074_11
t1
t2
Single Pulse
(Thermal Response)
10-4
10-3
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
0.1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S11-0512-Rev. B, 21-Mar-11
www.vishay.com
5

IRF9520, SiHF9520
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1000
ID
- 2.8 A
- 4.8 A
Bottom - 6.8 A
Top
800
600
400
200
VDD = - 25 V
25
91074_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
QG
- 10 V
12 V
0.2 F
0.3 F
QGS
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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6
Fig. 13b - Gate Charge Test Circuit

S11-0512-Rev. B, 21-Mar-11

IRF9520, SiHF9520
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit

D.U.T.
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
dV/dt controlled by Rg
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Note
Compliment N-Channel of D.U.T. for driver
Driver gate drive

P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform

Reverse
recovery
current
Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91074.

S11-0512-Rev. B, 21-Mar-11
www.vishay.com
7

Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
DIM.
Q
H(1)
D
L(1)
M*
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
4.24
4.65
0.167
0.183
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
P
MILLIMETERS
0.36
0.61
0.014
0.024
14.33
15.85
0.564
0.624
9.96
10.52
0.392
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
3.53
3.94
0.139
0.155
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xian

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice

www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customers responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16

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IRF9520, SiHF9520

Dynamic dV/dt Rating

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

Continuous Drain Current

Linear Derating Factor

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

This datasheet is subject to change without notice.

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

VDS = VGS, ID = - 250 A

Zero Gate Voltage Drain Current

VDS = - 100 V, VGS = 0 V

VDS = - 80 V, VGS = 0 V, TJ = 150 C

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Reverse Transfer Capacitance

Total Gate Charge

Turn-On Delay Time

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

TJ = 25 C, IF = - 6.8 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91074

This datasheet is subject to change without notice.

- ID, Drain Current (A)

- VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91074

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

- VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

- VDS, Drain-to-Source Voltage (V)

- ID, Drain Current (A)

- ID, Drain Current (A)

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

- ISD, Reverse Drain Current (A)

- VDS, Drain-to-Source Voltage (V)

- ID, Drain Current (A)

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Operation in this area limited

- VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

- VGS, Gate-to-Source Voltage (V)

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91074

This datasheet is subject to change without notice.

- ID, Drain Current (A)