Professional Documents
Culture Documents
Somayyeh Koohi
Department of Computer Engineering
Sharif University of Technology
Adapted with modifications from lecture notes prepared by
author
Topics
Design rules and fabrication
SCMOS scalable design rules
Stick diagrams
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Manufacturing problems
Photoresist shrinkage tearing
Variations in material mask
Variations in temperature
V i ti
Variations
iin oxide
id thi
thickness
k
Variation in Vt
Impurities
Variations between lots
Lot consists of multiple wafer
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Transistor problems
Variations in threshold voltage:
oxide thickness
ion implantation
poly variations
Variations in substrate
Sharif University of Technology
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Wiring problems
Diffusion:
Changes in doping
Poly, metal:
Variations in height, width
capacitance
variations in resistance,
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Oxide problems
Variations in height
Lack of planarity step coverage
metal 2
metal 2
metal 1
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Via problems
Via may not be cut all the way through
Undersize via has too much resistance
Via may be too large and create short
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Topics
Design rules and fabrication
SCMOS scalable design rules
Stick diagrams
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Scaling
Scale all chip parameters by x:
W -> W/x, L -> L/x, V -> V/x, etc.
Capacitance shrinks
Resistance unchanged
So chip speeds up
(CV/I)/(CV/I) = 1/x
More later
Sharif University of Technology
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Wires
6
metal 3
metal 2
metal 1
pdiff/ndiff
poly
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Transistors
2
3
2
3
1
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Vias
4
Types of via:
metal1/diff
metal1/poly
metal1/metal2
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Metal 3 via
Type: metal3/metal2
Rules:
cut: 3 x 3
overlap by metal2: 1
minimum spacing: 3
minimum spacing to via1: 2
5
1
3
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Tub tie
Tub to power supply
4
1
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Spacings
Diffusion/diffusion: 3
Poly/poly: 2
Poly/diffusion:
y
1
Via/via: 2
Metal1/metal1: 3
Metal2/metal2: 4
Metal3/metal3: 4
Diffusion/tub wall: 5
Sharif University of Technology
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Topics
Design rules and fabrication
SCMOS scalable design rules
Stick diagrams
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Stick diagrams
Is a cartoon of a layout
Shows
All components/vias (except possibly tub ties)
Relative placement
Not show
Exact placement
Transistor sizes
Wire lengths
Wire widths
Tub boundaries
Sharif University of Technology
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m1
poly
ndiff
pdiff
Short
m2
Short
m1
Short
NMOS
PMOS
poly
Short
illegal
ndiff
Short
pdiff
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Stick layers
metal 3
metal 2
metal 1
poly
ndiff
pdiff
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in
VSS
out
phi
phi
Modern VLSI Design: Chap2
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out
b
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NAND sticks
VDD
a
out
VSS
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a
outt
N1
(NAND)
b
a
outt
select
select
N1
(NAND)
b
out
N1
(NAND)
b
VSS
Sharif University of Technology
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a2
b2
a1
b1
a0
b0
ai
bi
ai
bi
ai
bi
select
select
select
m2(one-bit-mux)
select
select
m2(one-bit-mux)
select
select
m2(one-bit-mux)
VDD
oi
VSS
o2
VDD
oi
VSS
o1
VDD
oi
VSS
o0
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Automatic layout
Cell generators (macrocell generators) create
optimized layouts for ALUs, etc.
Standard cell/sea
cell/sea-of-gates
of gates layout creates layout
from pre-designed cells + custom routing
Sea-of-gates allows routing over the cell
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routing area
rea
Sharif University of Technology
routing area
routing
ting area
routing area
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