AO4614A

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4614A uses advanced trench

technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614A
is Pb-free (meets ROHS & Sony 259
specifications).

n-channel
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON)
< 31m (VGS=10V)
< 45m (VGS=4.5V)

p-channel
-40V
-5A (VGS = -10V)
RDS(ON)
< 45m (VGS = -10V)
< 63m (VGS = -4.5V)

D1

D2
S2
G2
S1
G1

1
2
3
4

8
7
6
5

D2
D2
D1
D1
G1

G2

S1

S2

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
40
VGS

Gate-Source Voltage

Pulsed Drain Current

TA=70C
B

TA=25C
Power Dissipation

20

20

-5

ID

-4

IDM

20

-20

1.28

1.28

-55 to 150

-55 to 150

TA=25C

Continuous Drain
Current A

TA=70C

Junction and Storage Temperature Range

PD
TJ, TSTG

Thermal Characteristics: n-channel and p-channel

Parameter
t 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

Max p-channel
-40

Symbol
RJA
RJL
RJA
RJL

Device
n-ch
n-ch
n-ch

Typ
48
74
35

p-ch
p-ch
p-ch

48
74
35

Units
V
V
A

W
C

Max Units
62.5 C/W
110 C/W
50 C/W
62.5
110
50

C/W
C/W
C/W

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AO4614A

N Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=10mA, V GS=0V

1
TJ=55C

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

20

VGS=10V, I D=6A
TJ=125C

Static Drain-Source On-Resistance

VGS=4.5V, I D=5A

gFS

Forward Transconductance

VSD

IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

VDS=5V, ID=6A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge

Units
V

VDS=32V, VGS=0V

VGS(th)

IS

Max

40

IGSS

RDS(ON)

Typ

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=20V, I D=6A

100

nA

2.3

23.2

31

36

48

32.6

45

22

m
m
S

0.77

2.5

404

pF

95

pF

37

pF

2.7

8.3

nC

4.2

nC

1.3

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

2.3

nC

tD(on)

Turn-On DelayTime

4.2

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

VGS=10V, VDS=20V, RL=3.3,

RGEN=3

3.3

ns

15.6

ns

ns

20.5
14.5

ns
nC

trr

Body Diode Reverse Recovery Time

IF=6A, dI/dt=100A/s

Qrr

Body Diode Reverse Recovery Charge

IF=6A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
Rev 1: Sept 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4614A

P-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-10mA, V GS=0V

-40
-1
-5

Gate-Body leakage current

VDS=0V, VGS=20V

Gate Threshold Voltage

VDS=VGS ID=-250A

-1

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-20

100

nA

-3

32.5

45

52

65

VGS=-4.5V, I D=-2A

51.4

63

VDS=-5V, ID=-4.8A

12

TJ=125C

Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)

-1.9

VGS=-10V, I D=-5A

Coss

Units
V

TJ=55C

IGSS

IS

Max

VDS=-32V, VGS=0V

VGS(th)

RDS(ON)

Typ

VGS=0V, VDS=-20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-20V, I D=-5A

A
m
m
S

-0.75

-1

-2.5

657

pF

143

pF

63

pF

6.5

13.6

nC

6.8

nC

1.8

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

3.9

nC

tD(on)

Turn-On DelayTime

7.5

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

VGS=-10V, VDS=-20V, RL=4,

RGEN=3

6.7

ns

26

ns

11.2

ns

Body Diode Reverse Recovery Time

IF=-5A, dI/dt=100A/s

22.3

Body Diode Reverse Recovery Charge

IF=-5A, dI/dt=100A/s

15.2

ns
nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
The
valueapplication
in any given
application
depends
on the user's
design.
The is
current
is t
based
on the resistance rating.
T
value
in any
a given
depends
on the
user's specific
board specific
design. board
The current
rating
basedrating
on the
10s thermal
A =25C.
rating,
pulse width
limited by junction temperature.
tB: Repetitive
10s thermal
resistance
rating.
the sum
of the
thermal
junction to lead RJL and lead to ambient.
C. Repetitive
The R JA israting,
B:
pulse
width
limitedimpedence
by junctionfrom
temperature.
the sum of theinthermal
from
lead R
leadduty
to ambient.
C.
D. The R
static
characteristics
Figuresimpedence
1 to 6,12,14
arejunction
obtainedtousing
80
sand
pulses,
cycle 0.5% max.
JA is
JL
D.
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
using
<300with
s pulses,
duty cycle
max.
E. These
tests
are performedinwith
the device
mounted
1 in2 FR-4
board
2oz. Copper,
in a0.5%
still air
environment with TA=25C. The SOA
E. These
tests are
performed
with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
curve
provides
a single
pulse rating.
T A=25C. The SOA curve provides a single pulse rating.
Rev 0 : Jan 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4614A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30
10V

20

5V

VDS=5V

25

4.5V
15
4V
ID(A)

ID (A)

20
15

125C

10

10
VGS=3.5V

5
0
0

25C

2.5

VDS (Volts)
Figure 1: On-Region Characteristics

4.5

1.8
Normalized On-Resistance

RDS(ON) (m)

3.5

VGS(Volts)
Figure 2: Transfer Characteristics

50

40
VGS=4.5V

30

VGS=10V

20
0

10

15

VGS=10V
ID=6A

1.6

VGS=4.5V
ID=5A

1.4
1.2
1
0.8

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

1.0E+01

80
ID=6A

70

1.0E+00

60

125C

1.0E-01

50

IS (A)

RDS(ON) (m)

125C

40

1.0E-02
25C

1.0E-03

30

1.0E-04

25C

20

1.0E-05

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4614A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10

800
VDS=20V
ID= 6A
Capacitance (pF)

VGS (Volts)

8
6
4
2

600
Ciss
400
Coss
Crss

200

0
0

10

100.0

100s
10ms

1ms

1s
1.0

10s

TJ(Max)=150C
TA=25C

30
Power (W)

ID (Amps)

40

TJ(Max)=150C
TA=25C

10s

10.0

0.1s

20

10

DC
0
0.001

0.1
1

10

100

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

VDS (Volts)

ZJA Normalized Transient

Thermal Resistance

30

40

RDS(ON)
limited

10

20

VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

0.1

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

T
10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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AO4614A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

25

30
-5V

-10V

25

VDS=-5V

-4.5V

-6V

20

-4V
15
-ID(A)

-ID (A)

20
15
-3.5V

10

10
VGS=-3V

25C

0
0

125C

1.5

-VDS (Volts)
Figure 1: On-Region Characteristics

2.5

3.5

4.5

-VGS(Volts)
Figure 2: Transfer Characteristics

60

1.8
Normalized On-Resistance

VGS=-4.5V

55

RDS(ON) (m)

50
45
40
VGS=-10V

35

VGS=-10V
ID=-5A

1.6
1.4

VGS=-4.5V
ID=-2A

1.2
1
0.8

30

0
0

25

10

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01

160
140

1.0E+00

ID=-5A

120

125C

1.0E-01
125C

100

-IS (A)

RDS(ON) (m)

50

80
60

1.0E-02
1.0E-03
1.0E-04

40

25C

25C

1.0E-05

20
2

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

1.0E-06
0.0

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4614A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10

1000
VDS=-20V
ID=-5A

800
Capacitance (pF)

-VGS (Volts)

8
6
4
2

600
400

10

Crss

15

-Qg (nC)
Figure 7: Gate-Charge Characteristics

30

40

100s
1ms
0.1s

TJ(Max)=150C
TA=25C

10s

30
Power (W)

RDS(ON)
limited

10ms

1s

20

10
10s

DC

0.1
0.1

20

40

TJ(Max)=150C, TA=25C

1.0

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

-ID (Amps)

Coss

200

10.0

Ciss

10

100

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

0
0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

0.01

100

1000

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