7MBR100SB060

IGBT Modules

IGBT MODULE (S series)

600V / 100A / PIM

Features
Low VCE(sat)
Compact package
P.C. board mount
Converter diode bridge, Dynamic brake circuit

Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless without specified)
Item

Symbol

Brake

Inverter

VCES
VGES
IC
Collector current
ICP
-IC
Collector power dissipation
PC
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC
ICP
Collector power dissipation
PC
Repetitive peak reverse voltage
VRRM
Repetitive peak reverse voltage
VRRM
Average output current
IO
Surge current (Non-Repetitive)
IFSM
I 2t
(Non-Repetitive)
I2 t
Operating junction temperature
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
Converter

Condition

Collector-Emitter voltage
Gate-Emitter voltage

Continuous
1ms
1 device

Continuous
1ms
1 device

50Hz/60Hz sine wave

Tj=150C, 10ms
half sine wave

AC : 1 minute

*1 Recommendable value : 2.5 to 3.5 Nm (M5)

*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.

Rat ing
600
20
100
200
100
400
600
20
50
100
200
600
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
3.5 *1

Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A 2s
C
C
V
V
Nm

7MBR100SB060

IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item

Symbol

Condition

Characteristics
Typ.
Max.
1.0
0.2
5.5
7.8
8.5
1.8
2.15
2.6
10000

Unit

Inverter

Min.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

ICES
IGES
VGE(th)
VCE(sat)

Input capacitance
Turn-on time

Cies
ton
tr
tr(i)
toff
tf
VF

Turn-off

Brake

Forward on voltage

Converter

IF=100A

0.45
0.25
0.08
0.40
0.05
1.6
1.95

chip
terminal

Reverse recovery time of FRD

Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage

trr
ICES
IGES
VCE(sat)

Turn-on time

Reverse current
Forward on voltage

ton
tr
toff
tf
IRRM
VFM

Reverse current
Resistance

IRRM
R

B value

IF=100A
VCES=600V, VGE=0V
VCE=0V, VGE=20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=15V
RG=51
VR=600V
IF=100A
chip
terminal
VR=800V
T=25C
T=100C
T=25/50C

Symbol

Condition

Turn-off time

Thermistor

VCE=600V, VGE=0V
VCE=0V, VGE=20V
VCE=20V, IC=100mA
VGE=15V, Ic=100A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=100A
VGE=15V
RG=24

1.8
2.05
0.45
0.25
0.40
0.05
1.1
1.2

465
3305

mA
A
V
V
pF
s

1.2
0.6
1.0
0.35

V
2.7
0.3
1.0
0.2

s
mA
A
V

2.5
1.2
0.6
1.0
0.35
1.0
1.5
1.0

5000
495
3375

mA
V
mA

520
3450

Thermal resistance Characteristics

Item

Min.

Thermal resistance ( 1 device )

Contact thermal resistance

Rth(j-c)

Rth(c-f)

Characteristics
Typ.
Max.

Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound

Unit

0.31
0.70
0.63
0.47
0.05

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

[Converter]

21(P)

[B ra k e ]

[Thermistor]

[In v er ter ]

2 2 (P 1 )
8

2 0 (G u)

1(R)

2(S)

3(T)

1 8 (G v)

1 7 (E v )

1 9 (E u )
7 (B )

1 4 (G b)

4 (U )

1 3 (G x)

1 6 (G w )

1 5 (E w )
5 (V )

1 2 (G y)

6 (W )

1 1 (G z)
1 0 (E n )

23(N)

2 4 (N 1 )

C/W

7MBR100SB060

IGBT Modules
Characteristics (Representative)

[ Inverter ]
Collector current vs. Collector-Emitter voltage

[ Inverter ]
Collector current vs. Collector-Emitter voltage

Tj= 25 C (typ.)

250

12V

15V

VGE= 20V

15V

VGE= 20V

12V

200

Collector current : Ic [ A ]

200

Collector current : Ic [ A ]

Tj= 125 C (typ.)

250

150

100

150

100

10V
50

50

10V

0
0

Collector - Emitter voltage : VCE [ V ]

[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)

Tj= 125 C

8
Collector - Emitter voltage : VCE [ V ]

150

100

50

Ic=200A
2

Ic=100A
Ic= 50A

0
0

10

Collector - Emitter voltage : VCE [ V ]

20

25

[ Inverter ]
Dynamic Gate charge (typ.)

[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25

15

Gate - Emitter voltage : VGE [ V ]

Vcc=300V, Ic=100A, Tj= 25

10000

Collector - Emitter voltage : VCE [ V ]

50000

Cies

5000

500

25

400

20

300

15

200

10

100

1000
Coes
Cres
500

0
0

10

15

20

25

Collector - Emitter voltage : VCE [ V ]

30

35

100

200

300

400

Gate charge : Qg [ nC ]

500

0
600

Gate - Emitter voltage : VGE [ V ]

Collector current : Ic [ A ]

Tj= 25 C

Tj= 25 C (typ.)

10

200

[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage

250

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

7MBR100SB060

IGBT Modules

[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=15V, Rg=24, Tj=125C

[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=15V, Rg=24, Tj=25C
1000

1000

ton
toff

tr

tr

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

ton
toff

100

tf

100

10

tf

10
0

50

100

150

200

50

Collector current : Ic [ A ]

[ Inverter ]
Switching time vs. Gate resistance (typ.)

150

200

[ Inverter ]
Switching loss vs. Collector current (typ.)

Vcc=300V, Ic=100A, VGE=15V, Tj=25C

5000

100
Collector current : Ic [ A ]

Vcc=300V, VGE=15V, Rg=24

10

ton

100

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

1000

tf

8
o

Eoff(125 C)

Eon(25 C)

Eoff(25 C)

2
o

Err(125 C)
o

Err(25 C)
10

0
10

100
Gate resistance : Rg [

300

50

100

150

200

Collector current : Ic [ A ]

[ Inverter ]
Switching loss vs. Gate resistance (typ.)

[ Inverter ]
Reverse bias safe operating area

Vcc=300V, Ic=100A, VGE=15V, Tj=125C

20

+VGE=15V, -VGE=
<15V, Rg>24,
Tj<125C
=
=

250

Eon
200
15
Collector current : Ic [ A ]

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Switching time : ton, tr, toff, tf [ nsec ]

Eon(125 C)
toff
tr

10
Eoff

150

100

5
50

Err
0

0
10

100
Gate resistance : Rg [

300

200

400

600

Collector - Emitter voltage : VCE [ V ]

800

IGBT Modules

7MBR100SB060

[ Inverter ]
Reverse recovery characteristics (typ.)

[ Inverter ]
Forward current vs. Forward on voltage (typ.)

Vcc=300V, VGE=15V, Rg=24

250

300

200

Tj=125 C
o

Reverse recovery current : Irr [ A ]

Forward current : IF [ A ]

150

100

50

Reverse recovery time : trr [ nsec ]

trr(125 C)

Tj=25 C

100
o

Irr(125 C)
o

trr(25 C)
o

Irr(25 C)

10
0

50

Forward on voltage : VF [ V ]

100

150

200

Forward current : IF [ A ]

[ Converter ]
Forward current vs. Forward on voltage (typ.)
250

Tj= 25 C

Tj= 125 C

1.2

1.6

Forward current : IF [ A ]

200

150

100

50

0
0.0

0.4

0.8

2.0

Forward on voltage : VFM [ V ]

[ Thermistor ]
Temperature characteristic (typ.)

Transient thermal resistance

200

1
FWD[Inverter]

Thermal resistanse : Rth(j-c) [ C/W ]

100

Resistance : R [ k ]

IGBT[Brake]
Conv. Diode
IGBT[Inverter]

0.1

10

0.01
0.001

0.01

0.1

Pulse width : Pw [ sec ]

0.1
-60

-40

-20

20

40

60

Temperature [

80
o

C]

100

120

140

160

180

7MBR100SB060

IGBT Modules

[ Brake ]
Collector current vs. Collector-Emitter voltage

[ Brake ]
Collector current vs. Collector-Emitter voltage

Tj= 25 C (typ.)

120

15V

15V

VGE= 20V

12V

100

100

80

80

Collector current : Ic [ A ]

Collector current : Ic [ A ]

VGE= 20V

Tj= 125 C (typ.)

120

60

40

10V

20

12V

60

40
10V

20

0
0

Collector - Emitter voltage : VCE [ V ]

[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)

Tj= 25 C (typ.)

10

[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage

120

Tj= 25 C

100

Collector - Emitter voltage : VCE [ V ]

Tj= 125 C

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

80

60

40

Ic=100A
2

Ic= 50A

20

Ic= 25A

0
0

10

Collector - Emitter voltage : VCE [ V ]

20

25

[ Brake ]
Dynamic Gate charge (typ.)

[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25

15

Gate - Emitter voltage : VGE [ V ]

Vcc=300V, Ic=50A, Tj= 25

20000

500

25

400

20

300

15

200

10

100

Cies

1000

Coes
Cres

100

0
0

10

15

20

25

Collector - Emitter voltage : VCE [ V ]

30

35

50

100

150

200

Gate charge : Qg [ nC ]

250

0
300

Gate - Emitter voltage : VGE [ V ]

Collector - Emitter voltage : VCE [ V ]

Capacitance : Cies, Coes, Cres [ pF ]

10000

IGBT Modules

7MBR100SB060

M712

Outline Drawings, mm

1221

8-R2.250.3

1100.3
13.09

19.05

15.24

19

20

16

17

18

3.81

15.24
15

4=15.24

14

11.5

10

19.697

3.81

15.24

15.24

15.24

15.24

A
A
22.86

2.50.1

0.4

0.80.2

1.150.2

15.24

10.2

1.10.3

Section A-A

2.90.3
6.50.5

20.51
171

3.50.5

2.10.1

Shows theory dimensions

60.3

14.995

1.50.3

15.475

24

4.055

3.81

15.24

39.90.3

23

3.81

11.665

3.81

4.198

57.50.3

22

99.60.3
621
500.3
11.43
11.43

+0.5
0

11.5

21

94.50.3
19.05

+0.5
0

4-5.50.3