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FSDH0265RN, FSDM0265RN
Applications
SMPS for VCR, SVR, STB, DVD & DVCD
SMPS for Printer, Facsimile & Scanner
Adaptor for Camcorder
Description
The FSDx0265RN(x stands for M, H) are integrated Pulse
Width Modulators (PWM) and Sense FETs specifically
designed for high performance offline Switch Mode Power
Supplies (SMPS) with minimal external components. Both
devices are integrated high voltage power switching regulators which combine an avalanche rugged Sense FET with a
current mode PWM control block. The integrated PWM controller features include: a fixed oscillator with frequency
modulation for reduced EMI, Under Voltage Lock Out
(UVLO) protection, Leading Edge Blanking (LEB), optimized gate turn-on/turn-off driver, Thermal Shut Down
(TSD) protection, Abnormal Over Current Protection
(AOCP) and temperature compensated precision current
sources for loop compensation and fault protection circuitry.
When compared to a discrete MOSFET and controller or
RCC switching converter solution, the FSDx0265RN reduce
total component count, design size, weight and at the same
time increase efficiency, productivity, and system reliability.
Both devices are a basic platform well suited for cost effective designs of flyback converters.
85-265VAC
PRODUCT
Adapter(1)
Open
Frame(2)
Adapter(1)
Open
Frame(2)
FSDL321
11W
17W
8W
12W
FSDH321
11W
17W
8W
12W
FSDL0165RN
13W
23W
11W
17W
FSDM0265RN
16W
27W
13W
20W
FSDH0265RN
16W
27W
13W
20W
FSDL0365RN
19W
30W
16W
24W
FSDM0365RN
19W
30W
16W
24W
FSDL321L
11W
17W
8W
12W
FSDH321L
11W
17W
8W
12W
FSDL0165RL
13W
23W
11W
17W
FSDM0265RL
16W
27W
13W
20W
FSDH0265RL
16W
27W
13W
20W
FSDL0365RL
19W
30W
16W
24W
FSDM0365RL
19W
30W
16W
24W
Table 1. Notes: 1. Typical continuous power in a non-ventilated enclosed adapter with sufficient drain pattern or
something as a heat sinker measured at 50C ambient. 2.
Maximum practical continuous power in an open frame
design with sufficient drain pattern or something as a
heat sinker at 50C ambient. 3. 230 VAC or 100/115 VAC
with doubler.
Typical Circuit
AC
IN
DC
OUT
Vstr
Ipk
Drain
PWM
Vfb
Vcc
Source
Rev.1.0.6
2005 Fairchild Semiconductor Corporation
FSDH0265RN, FSDM0265RN
I start
V BURL /V BURH
Soft start
8V/12V
Vcc good
Vcc
V BURH
I B_PEAK
Vcc
Drain
6,7,8
Vstr
5
Internal
Bias
Vref
Freq.
Modulation
Vcc
OSC
I delay
V FB
IFB
Normal
3
2.5R
I pk
PWM
Burst
Gate
driver
LEB
V SD
Vcc
1 GND
S
Vovp
TSD
Vcc good
AOCP
Vocp
FSDH0265RN, FSDM0265RN
Pin Definitions
Pin Number
Pin Name
GND
Sense FET source terminal on primary side and internal control ground.
Vcc
Positive supply voltage input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (Vstr) via an internal switch during
startup (see Internal Block Diagram section). It is not until Vcc reaches the
UVLO upper threshold (12V) that the internal start-up switch opens and device power is supplied via the auxiliary transformer winding.
Vfb
The feedback voltage pin is the non-inverting input to the PWM comparator.
It has a 0.9mA current source connected internally while a capacitor and optocoupler are typically connected externally. A feedback voltage of 6V triggers over load protection (OLP). There is a time delay while charging
between 3V and 6V using an internal 5uA current source, which prevents
false triggering under transient conditions but still allows the protection
mechanism to operate under true overload conditions.
Ipk
Pin to adjust the current limit of the Sense FET. The feedback 0.9mA current
source is diverted to the parallel combination of an internal 2.8k resistor
and any external resistor to GND on this pin to determine the current limit.
If this pin is tied to Vcc or left floating, the typical current limit will be 1.5A.
Vstr
This pin connects directly to the rectified AC line voltage source. At start up
the internal switch supplies internal bias and charges an external storage
capacitor placed between the Vcc pin and ground. Once the Vcc reaches
12V, the internal switch is disabled.
Drain
The Drain pin is designed to connect directly to the primary lead of the transformer and is capable of switching a maximum of 650V. Minimizing the
length of the trace connecting this pin to the transformer will decrease leakage inductance.
6, 7, 8
Pin Configuration
8DIP
8LSOP
GND 1
8 Drain
Vcc 2
7 Drain
Vfb 3
6 Drain
Ipk 4
5 Vstr
FSDH0265RN, FSDM0265RN
Symbol
Value
Unit
VDRAIN,MAX
650V
VSTR,MAX
650V
IDM
8.0
ADC
(1)
(2)
EAS
68
mJ
VCC,MAX
20
VFB
-0.3 to VCC
PD
1.56
TJ
Internally limited
TA
-25 to +85
TSTG
-55 to +150
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25C
3. L = 13H, starting Tj = 25C
4. Vsd is shutdown feedback voltage ( see Protection Section in Electrical Characteristics )
Thermal Impedance
Parameter
Symbol
Value
Unit
JA(1)
JC(2)
JT(4)
79.64(3)
C/W
18.20
C/W
34.30
C/W
8DIP
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Junnction-to-Top Thermal
Note:
1. Free standing with no heatsink.
2. Measured on the DRAIN pin close to plastic interface.
3. Without copper clad.
4. Measured on the PKG top surface.
* - all items are tested with the standard JESD 51-10(DIP)
FSDH0265RN, FSDM0265RN
Electrical Characteristics
(Ta = 25C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
VDS=660V, VGS=0V
50
VDS=0.8Max.Rating,
VGS=0V, TC=125C
200
VGS=10V, ID=0.5A
5.0
6.0
550
pF
38
pF
IDSS
On-State Resistance(1)
RDS(ON)
Input Capacitance
CISS
Output Capacitance
COSS
CRSS
17
pF
TD(ON)
20
ns
15
ns
55
ns
25
ns
92
100
108
KHz
2.0
.3.0
4.0
KHz
61
67
73
KHz
1.5
2.0
2.5
KHz
10
FSDH0265R
71
77
83
FSDM0265R
62
67
72
TR
TD(OFF)
TF
VGS=0V, VDS=25V,
F=1MHz
VDS=325V, ID=1.0A
(Sense FET switching
time is essentially
independent of
operating temperature)
CONTROL SECTION
Output Frequency
FOSC
FMOD
Output Frequency
FOSC
FMOD
DMAX
DMIN
FSDH0265R
FSDM0265R
-25C Ta 85C
VSTART
VFB=GND
11
12
13
VSTOP
VFB=GND
IFB
VFB=GND
0.7
0.9
1.1
mA
VFB=4V
10
15
20
ms
VBURH
0.4
0.5
0.6
VBURL
0.25
0.35
0.45
IOVER
1.3
1.5
1.7
TCLD
500
ns
TS/S
FSDH0265RN, FSDM0265RN
125
140
VSD
5.5
6.0
6.5
VOVP
18
19
3.5
5.0
6.5
200
ns
Thermal Shutdown
TSD
IDELAY
VFB=4V
TLEB
IOP
VCC=14V
mA
ISTART
VCC=0V
0.7
0.85
1.0
mA
VSTR
VCC=0V
35
Note:
1. Pulse test: Pulse width 300uS, duty 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
FSDH0265RN, FSDM0265RN
KA5x0265RN
FSDx0265RN
FSDx0265RN Advantages
Soft-Start
not applicable
15mS
not applicable
Programmable of
default current limit
Smaller transformer
Allows power limiting (constant overload power)
Allows use of larger device for lower
losses and higher efficiency.
Frequency Modulation
not applicable
2.0KHz @67KHz
3.0KHz @100KHz
not applicable
Yes-built into
controller
Drain Creepage at
Package
1,02mm
7.62mm
FSDH0265RN, FSDM0265RN
1.20
1.20
1.00
1.00
Normalized
Normalized
0.80
0.60
0.40
0.80
0.60
0.40
0.20
0.20
0.00
0.00
-50
50
100
-50
150
1.20
1.20
1.00
1.00
0.80
0.80
Normalized
Normalized
150
0.60
0.40
0.20
0.60
0.40
0.20
0.00
0.00
-50
50
100
150
-50
T emp[]
50
100
150
T emp[ ]
1.20
1.20
1.00
1.00
0.80
0.80
Normalized
Nomalized
100
T emp[]
T emp[]
0.60
0.40
0.20
0.60
0.40
0.20
0.00
0.00
-50
50
100
T emp[]
50
150
-50
50
100
T emp[]
150
FSDH0265RN, FSDM0265RN
1.20
1.20
1.00
1.00
Normalized
Normalized
0.80
0.60
0.40
0.80
0.60
0.40
0.20
0.20
0.00
0.00
-50
50
100
-50
150
150
1.20
1.20
1.00
1.00
0.80
Normalized
Normalized
100
T emp[]
T emp[]
0.60
0.40
0.20
0.80
0.60
0.40
0.20
0.00
0.00
-50
50
100
150
-50
T emp[]
50
100
150
T emp[]
1.20
1.20
1.00
1.00
Normalized
Normalized
50
0.80
0.60
0.40
0.80
0.60
0.40
0.20
0.20
0.00
0.00
-50
50
100
T emp[ ]
150
-50
50
100
150
T emp[]
FSDH0265RN, FSDM0265RN
Functional Description
1. Startup : In previous generations of Fairchild Power
Switches (FPSTM) the Vstr pin had an external resistor to the
DC input voltage line. In this generation the startup resistor
is replaced by an internal high voltage current source and a
switch that shuts off when 15mS goes by after the supply
voltage, Vcc, gets above 12V. The source turns back on if
Vcc drops below 8V.
Vcc
Vfb
Vo
Istr
0.9mA
FB
3
OSC
D1
Cfb
D2
2.5R
Vfb*
Gate
driver
R
431
VSD
Vin,dc
Vref
5uA
OLP
Vcc
UVLO <8V
on
J-FET
3. Leading edge blanking (LEB) : At the instant the internal Sense FET is turned on, there usually exists a high current spike through the Sense FET, caused by the primary side
capacitance and secondary side rectifier diode reverse recovery. Excessive voltage across the Rsense resistor would lead
to incorrect feedback operation in the current mode PWM
control. To counter this effect, the FPSTM employs a leading
edge blanking (LEB) circuit. This circuit inhibits the PWM
comparator for a short time (TLEB) after the Sense FET is
turned on.
10
FSDH0265RN, FSDM0265RN
Vcc
8V
OLP
6V
FPS switching
Following Vcc
3V
Delay current (5uA) charges the Cfb
t1
t2
t1 =
1
RC
t 2 = C fb
In (1
fb
t3
t4
V ( t1)
); V ( t1) = 3V , R = 2 . 8 K , C fb = C
R
fb _ fig . 2
(V (t1 + t 2) V (t1))
; I delay = 5uA,V (t1 + t 2) V (t1) = 3V
I delay
PWM
COMPARATOR
Vfb
LEB
CLK
Drain
Out Driver
Vsense
AOCP
COMPARATOR
4.4 Over Voltage Protection (OVP) : In case of malfunction in the secondary side feedback circuit, or feedback loop
open caused by a defect of solder, the current through the
opto-coupler transistor becomes almost zero. Then, Vfb
climbs up in a similar manner to the over load situation, forcing the preset maximum current to be supplied to the SMPS
until the over load protection is activated. Because excess
energy is provided to the output, the output voltage may
exceed the rated voltage before the over load protection is
activated, resulting in the breakdown of the devices in the
secondary side. In order to prevent this situation, an over
voltage protection (OVP) circuit is employed. In general,
Vcc is proportional to the output voltage and the FPSTM uses
Vcc instead of directly monitoring the output voltage. If
VCC exceeds 19V, OVP circuit is activated resulting in termination of the switching operation. In order to avoid undesired activation of OVP during normal operation, Vcc should
be properly designed to be below 19V.
Rsense
VAOCP
Drain current
[A]
2.15A
1mS
15steps
Current limit
0.98A
11
FSDH0265RN, FSDM0265RN
D R A IN
5V
S W IT C H
O FF
GND
V BURH
V BURL
I_ o v e r
Rsense
VBURL/
VBURH
VBURH
7. Frequency Modulation : EMI reduction can be accomplished by modulating the switching frequency of a switched
power supply. Frequency modulation can reduce EMI by
spreading the energy over a wider frequency range than the
band width measured by the EMI test equipment. The
amount of EMI reduction is directly related to the depth of
the reference frequency. As can be seen in Figure 11, the frequency changes from 65KHz to 69KHz in 4mS for the
FSDM0265RN. Frequency modulation allows the use of a
cost effective inductor instead of an AC input mode choke to
satisfy the requirements of world wide EMI limits.
Inte rnal
O scillator
12
D rain to
S ource
voltage
D rain to
S ource
curren t
V ds
W aveform
4kH z
65kH z
67kH z
69kH z
T urn-on
T u rn-off
po int
FSDH0265RN, FSDM0265RN
5uA
Amplitude (dBV)
900uA
Feed
Back
CISPR2QB
CISPR2AB
2 K
4
Current
Limit
AK
PWM
comparator
0 .8 K
Rsense
SenseFET
Sense
Frequency (MHz)
Figure 12. KA5-series FPSTM Full Range EMI scan(67KHz,
no Frequency Modulation) with DVD Player SET
Amplitude (dBV)
CISPR2QB
CISPR2AB
X = 1.86k,
Since X represents the resistance of the parallel network, A
can be calculated using the following equation:
A = X / (1 - (X/2.8k))
Frequency (MHz)
Figure 13. FSDX-series FPSTM Full Range EMI Scan
(67KHz, with Frequency Modulation) with DVD Player SET
13
FSDH0265RN, FSDM0265RN
2A/250V
C7
400V
/47u
FUSE
85VAC
~275VAC
100pF
/400V
C1
LF1
40mH
R1
47K
R3
56K/1/
4W
100pF
/400V
C2
D5
UF4007
KBP06M
GreenFPS
PERFORMANCE SUMMARY
Output Power:
17W
Regulation
3.3V:
5%
5.0V:
5%
17.0V:
7%
23.0:
7%
Efficiency:
75%
No load Consumption:
0.12W at 230Vac
C8
6.8n/1k
V
+23.0V
D12
EGP20D
R15
20R
11
D14
10
5
D start
EGP20D
FSDM0265RN
S
1
R4
30R
R5
6kR
D6
UF4004
ZD1
19V
C6
50V
47uF
C9
33n
50V
SB360
D15
100uF
/50V
C15
470uF
/35V
C16
220uF
/35V
0.005~0.25A
8
R21
330R
Q1 FOD2741A
PC817
C13
1000uF
/16V
C14
470uF
/10V
+5.0V
0.2~0.7A
R20
L1
+3.3V
0.4~1.0A
C12
470uF
/10V
R14
R22
1KR 800R
R19
R13
2.7K
0.1uF/mon
olithic
C209
R15 6.9K
TL431AZ
0.01~0.3A
L2
C11
1000uF
/16V
PC817
ZD2
19V
100uF
/50V
L3
+17.0V
D13
EGP20D
C17
R12
1.5K
14
FSDH0265RN, FSDM0265RN
2. Transformer Specification
1.
-
6mm
12
11
2
8
7
top
bottom
2.
NO.
3.
NB
N P/2
N 23V
N 17V
N 5V
N 3.3V
N P/2
10
3
4
PIN(S F)
W IRE
TURNS
W INDING M ETHOD
N P/2
3 2
0.25 1
22
SOLENOID W INDING
N 3.3V
0.3 8
STACK W INDING
N 5V
10 6
0.3 2
STACK W INDING
N 16V
11 6
0.3 4
SOLENOID W INDING
N 23V
12 11
0.3 2
SOLENOID W INDING
N P/2
2 1
0.25 1
22
SOLENOID W INDING
NB
4 5
0.25 1
10
CENTER W INDING
ELECTRIC CH AR ACTERISTIC
CLOSURE
PIN
SPEC.
REM ARKS
INDUCTANCE
1-3
800uH 10%
1KHz, 1V
LEAKAGE L
1-3
15uH MAX.
EER 2828
EER 2828
15
FSDH0265RN, FSDM0265RN
Layout Considerations
SURFACE MOUNTED
COPPER AREA FOR HEAT
SINKING
DC_link Capacitor
#1 : GND
#2 : VCC
#3 : Vfb
#4 : Ipk
#5 : Vstr
#6 : Drain
#7 : Drain
#8 : Drain
Y1CAPACITOR
- +
DC
OUT
16
FSDH0265RN, FSDM0265RN
Package Dimensions
8DIP
17
FSDH0265RN, FSDM0265RN
8LSOP
18
FSDH0265RN, FSDM0265RN
Ordering Information
Product Number
Package
Marking Code
BVDSS
FOSC
RDS(on)
FSDM0265RN
8DIP
DM0265R
650V
67KHz
5.0
FSDH0265RN
8DIP
DH0265R
650V
100KHz
5.0
FSDM0265RL
8LSOP
DM0265R
650V
67KHz
5.0
FSDH0265RL
8LSOP
DH0265R
650V
100KHz
5.0
19
FSDH0265RN, FSDM0265RN
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
4/26/05 0.0m 001
2005 Fairchild Semiconductor Corporation